Showing 1–11 of 11 results for author: Wahlbrink, T

Integrated ultrafast all-optical polariton transistors

Authors: Pietro Tassan, Darius Urbonas, Bartos Chmielak, Jens Bolten, Thorsten Wahlbrink, Max C. Lemme, Michael Forster, Ullrich Scherf, Rainer F. Mahrt, Thilo Stöferle

Abstract: The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to re… ▽ More The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to realize all-optical switches has, so far, precluded the fabrication of scalable architectures. Recently, microcavities in the strong light-matter interaction regime enabled all-optical transistors which, when used with an embedded organic material, can operate even at room temperature with sub-picosecond switching times, down to the single-photon level. However, the vertical cavity geometry prevents complex circuits with on-chip coupled transistors. Here, by leveraging silicon photonics technology, we show exciton-polariton condensation at ambient conditions in micrometer-sized, fully integrated high-index contrast grating microcavities filled with an optically active polymer. By coupling two resonators and exploiting seeded polariton condensation, we demonstrate ultrafast all-optical transistor action and cascadability. Our experimental findings open the way for scalable, compact all-optical integrated logic circuits that could process optical signals two orders of magnitude faster than their electrical counterparts. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Authors: Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel, Ke Ran, Sebastian Lukas, Enrique G. Marín, Oliver Hartwig, Maximilian Prechtl, Thorsten Wahlbrink, Joachim Mayer, Georg S. Duesberg, Andrés Godoy, Alwin Daus, Max C. Lemme

Abstract: Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult… ▽ More Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 30 pages

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Authors: Lukas Völkel, Dennis Braun, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Ke Ran, Kevin Kistermann, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme

Abstract: The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly speci… ▽ More The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$. △ Less

Submitted 11 March, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

Comments: 39 pages

Journal ref: Advanced Functional Materials, 202300428, 2023

A verified equivalent-circuit model for slotwaveguide modulators

Authors: Heiner Zwickel, Stefan Singer, Clemens Kieninger, Yasar Kutuvantavida, Narek Muradyan, Thorsten Wahlbrink, Shiyoshi Yokoyama, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF tr… ▽ More We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators. △ Less

Submitted 10 December, 2019; originally announced January 2020.

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Authors: Melkamu Belete, Satender Kataria, Aykut Turfanda, Sam Vaziri, Thorsten Wahlbrink, Olof Engström, Max C. Lemme

Abstract: Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal electrodes. Electrical characterizations reveal a bipolar and forming free switching process with stable retention for at least 2500 seconds. Controlled experim… ▽ More Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal electrodes. Electrical characterizations reveal a bipolar and forming free switching process with stable retention for at least 2500 seconds. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH$^-$). These originate from catalytic splitting of adsorbed water molecules by MoS$_2$. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH$^-$ ions along the vertical MoS$_2$ layers influences the energy barrier at the Si/MoS$_2$ interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing silicon technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionicelectronic devices based on TMDs and other 2D materials for memristive applications. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Journal ref: Advanced Electronic Materials, 1900892, 2020

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Authors: Piotr J Cegielski, Anna Lena Giesecke, Stefanie Neutzner, Caroline Porschatis, Marina Gandini, Daniel Schall, Carlo AR Perini, Jens Bolten, Stephan Suckow, Satender Kataria, Bartos Chmielak, Thorsten Wahlbrink, Annamaria Petrozza, Max C Lemme

Abstract: Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through cost… ▽ More Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Journal ref: Nano Letters, 18(11): 6915-6923, 2018

Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications

Authors: Piotr Jacek Cegielski, Jens Bolten, Jung Wuk Kim, Florian Schlachter, Christoph Nowak, Thorsten Wahlbrink, Anna Lena Giesecke, Max Christian Lemme

Abstract: In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp… ▽ More In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp distortions and alignment precision of this mix & match approach. By aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate pattern distortions of order of $3 μm$ over 6 inch wafer area, overlay accuracy better than $1.2 μm$ has been demonstrated. This result can partially be attributed to the flexible SCIL stamp which compensates deformations caused by the presence of particles which would otherwise significantly reduce the alignment precision. △ Less

Submitted 13 June, 2018; originally announced August 2018.

Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication

Authors: Piotr Jacek Cegielski, Stefanie Neutzner, Caroline Porschatis, Holger Lerch, Jens Bolten, Stephan Suckow, Ajay Ram Srimath Kandada, Bartos Chmielak, Annamaria Petrozza, Thorsten Wahlbrink, Anna Lena Giesecke

Abstract: Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, l… ▽ More Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used followed by indirect structuring of the perovskite waveguide. We embed methylammonium lead tri-iodide (MAPbI3) in a pre-patterned race-track microresonator and couple the emitted light to an integrated photonic waveguide. We clearly observe the build-up of spectrally narrow lasing modes at room temperature upon a pump threshold fluence of $19.6 μJcm^{-2}$. Our results evidence the possibility of on-chip lasers based on metal-halide perovskites with industry relevance on a commercially available dielectric photonic platform, which is a step forward towards low-cost integrated photonic devices. △ Less

Submitted 4 July, 2017; originally announced July 2017.

Journal ref: Opt. Express 25, 13199-13206 (2017)

Reflective Arrayed Waveguide Grating with Sagnac Loop Reflectors in Silicon-on-Insulator with Gaussian Pass-band

Authors: Bernardo Gargallo, Pascual Muñoz, Rocío Baños, Anna L. Giesecke, Jens Bolten, Thorsten Wahlbrink, Herbert Kleinjans

Abstract: In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die. In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die. △ Less

Submitted 30 March, 2014; originally announced March 2014.

Mobility in Graphene Double Gate Field Effect Transistors

Authors: M. C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H. Kurz

Abstract: In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mob… ▽ More In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values. △ Less

Submitted 29 September, 2008; originally announced September 2008.

Comments: 7 pages, 9 figures

Journal ref: Solid State Electronics, Vol. 52. Issue 4, pp. 514-518, 2008

Observation of magnetic order in La_{1.9}Sr_{0.1}CuO_{4} from two-magnon Raman scattering

Authors: Y. Lin, J. Sichelschmidt, J. E. Eldridge, T. Wahlbrink, S. -W. Cheong

Abstract: We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. The two-magnon Raman intensity increases with decreasing temperature. The magnetic scattering in La_{1.9}Sr_{0.1}CuO_4 is totally different from that reported in the parent compound La_2CuO_4. We analyze the line shape o… ▽ More We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. The two-magnon Raman intensity increases with decreasing temperature. The magnetic scattering in La_{1.9}Sr_{0.1}CuO_4 is totally different from that reported in the parent compound La_2CuO_4. We analyze the line shape of the two-magnon scattering within the traditional Loudon-Fleury theory and find the superexchange constant J=1052 cm^{-1}. The calculation of the frequency moment suggests that the quantum fluctuations are very weak in the system. The room temperature Raman scattering from La_2CuO_4 is also measured. Strong features appear in the one-phonon spectrum at the frequencies of the longitudinal optical (LO) infrared modes which we suggest become Raman active through a Fröhlich-interaction. △ Less

Submitted 1 December, 1998; originally announced December 1998.

Comments: 6 pages, 4 eps figures, submitted to PRB