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Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
Authors:
A. C. Betz,
R. Wacquez,
M. Vinet,
X. Jehl,
A L. Saraiva,
M. Sanquer,
A. J. Ferguson,
M. F. Gonzalez-Zalba
Abstract:
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via…
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We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $Δ_{vo}$ of 145 $μ$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics.
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Submitted 1 May, 2015; v1 submitted 12 April, 2015;
originally announced April 2015.
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Valley blockade and multielectron spin-valley Kondo effect in silicon
Authors:
A. Crippa,
M. L. V. Tagliaferri,
D. Rotta,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
R. Wacquez,
M. Vinet,
E. Prati
Abstract:
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation…
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We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.
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Submitted 29 April, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Charge Pum** Through a Single Donor Atom
Authors:
G. C. Tettamanzi,
R. Wacquez,
S. Rogge
Abstract:
Presented in this paper is a proof-of-concept for a new approach to single electron pum** based on a Single Atom Transistor (SAT). By charge pum** electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
Presented in this paper is a proof-of-concept for a new approach to single electron pum** based on a Single Atom Transistor (SAT). By charge pum** electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
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Submitted 8 June, 2014; v1 submitted 14 January, 2014;
originally announced January 2014.
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Discrete Charging in Polysilicon Gates of Single Electron Transistors
Authors:
Dharmraj Kotekar-Patil,
Stefan Jauerneck,
David Wharam,
Dieter Kern,
Xavier Jehl,
Romain Wacquez,
M. Sanquer
Abstract:
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged isla…
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Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.
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Submitted 6 January, 2014;
originally announced January 2014.
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A hybrid metal/semiconductor electron pump for quantum metrology
Authors:
X. Jehl,
B. Voisin,
T. Charron,
P. Clapera,
S. Ray,
B. Roche,
M. Sanquer,
S. Djordjevic,
L. Devoille,
R. Wacquez,
M. Vinet
Abstract:
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck cons…
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Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pum** at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pum** can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere.
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Submitted 26 March, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
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A two-atom electron pump
Authors:
B. Roche,
R. -P. Riwar,
B. Voisin,
E. Dupont-Ferrier,
R. Wacquez,
M. Vinet,
M. Sanquer,
J. Splettstoesser,
X. Jehl
Abstract:
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising functionalities for future nanoelectronics consists in manipulating a single electron over two dopants. Here we demonstrate electron pum** through two phosphorus donors in…
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The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising functionalities for future nanoelectronics consists in manipulating a single electron over two dopants. Here we demonstrate electron pum** through two phosphorus donors in series implanted in a silicon nanowire. While quantized pum** is achieved in the low frequency adiabatic regime, we observe remarkable features at higher frequency when the charge transfer is limited by the different tunneling rates. The transitions between quantum states are modeled involving a Landau-Zener transition, allowing to reproduce in detail the characteristic signatures observed in the non-adiabatic regime.
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Submitted 5 December, 2012;
originally announced December 2012.
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Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
Authors:
Benoit Roche,
Eva Dupont-Ferrier,
Benoit Voisin,
Manuel Cobian,
Xavier Jehl,
Romain Wacquez,
Maud Vinet,
Yann-Michel Niquet,
Marc Sanquer
Abstract:
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors…
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We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO$_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.
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Submitted 12 July, 2012;
originally announced July 2012.
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Coupling and coherent electrical control of two dopants in a silicon nanowire
Authors:
E. Dupont-Ferrier,
B. Roche,
B. Voisin,
X. Jehl,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we…
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Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon.
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Submitted 8 July, 2012;
originally announced July 2012.
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Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Authors:
Enrico Prati,
Marco De Michielis,
Matteo Belli,
Simone Cocco,
Marco Fanciulli,
Dharmraj Kotekar-Patil,
Matthias Ruoff,
Dieter P. Kern,
David A. Wharam,
Arjan Verduijn,
Giuseppe Tettamanzi,
Sven Rogge,
Benoit Roche,
Romain Wacquez,
Xavier Jehl,
Maud Vinet,
Marc Sanquer
Abstract:
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr…
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We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.
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Submitted 20 March, 2012;
originally announced March 2012.
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A tunable, dual mode field-effect or single electron transistor
Authors:
Benoît Roche,
Benoit Voisin,
Xavier Jehl,
Romain Wacquez,
Marc Sanquer,
Maud Vinet,
Veeresh Deshpande,
Bernard Previtali
Abstract:
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative…
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A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
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Submitted 18 January, 2012;
originally announced January 2012.
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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Authors:
B. C. Johnson,
G. C. Tettamanzi,
A. D. C. Alves,
S. Thompson,
C. Yang,
J. Verduijn,
J. A. Mol,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. Rogge,
D. N. Jamieson
Abstract:
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** proc…
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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stop** is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stop** is dominant leading to discrete decreases in drain current.
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Submitted 29 July, 2010;
originally announced July 2010.
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Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
Authors:
Mathieu Pierre,
Benoît Roche,
Romain Wacquez,
Xavier Jehl,
Marc Sanquer,
Maud Vinet
Abstract:
We present a systematic study of various ways (top gates, local do**, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by th…
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We present a systematic study of various ways (top gates, local do**, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the do** profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local do** is achieved with the realisation of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realisation of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances towards the electrodes and between the dots can be independently tuned with the control top gates wrap** the silicon nanowire.
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Submitted 2 May, 2011; v1 submitted 1 June, 2010;
originally announced June 2010.
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Compact silicon double and triple dots realized with only two gates
Authors:
Mathieu Pierre,
Romain Wacquez,
Benoit Roche,
Xavier Jehl,
Marc Sanquer,
Maud Vinet,
Enrico Prati,
Matteo Belli,
Marco Fanciulli
Abstract:
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlap** a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local do** depending on the spacers length. The m…
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We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlap** a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local do** depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
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Submitted 31 May, 2010;
originally announced May 2010.
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Single donor ionization energies in a nanoscale CMOS channel
Authors:
M. Pierre,
R. Wacquez,
X. Jehl,
M. Sanquer,
M. Vinet,
O. Cueto
Abstract:
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics industry. While single-dopant signatures have been observed at low temperature, studying the impact of only one dopant up to room temperature requires extremely sm…
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One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics industry. While single-dopant signatures have been observed at low temperature, studying the impact of only one dopant up to room temperature requires extremely small lengths. Here, we show that a single arsenic dopant dramatically affects the off-state behavior of an advanced microelectronics field effect transistor (FET) at room temperature. Furthermore, the ionization energy of this dopant should be profoundly modified by the close proximity of materials with a different dielectric constant than the host semiconductor. We measure a strong enhancement, from 54meV to 108meV, of the ionization energy of an arsenic atom located near the buried oxide. This enhancement is responsible for the large current below threshold at room temperature and therefore explains the large variability in these ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals.
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Submitted 4 March, 2010;
originally announced March 2010.
