Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Authors:
Charles Babin,
Rainer Stöhr,
Naoya Morioka,
Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel,
Christian Gobert,
Patrick Berwian,
Georgy V. Astakhov,
Wolfgang Knolle,
Sridhar Majety,
Pranta Saha,
Marina Radulaski,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par…
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Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Submitted 29 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
