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Water jet space charge spectroscopy: Route to direct measurement of electron dynamics for organic systems in their natural environment
Authors:
Michael Mittermair,
Felix Martin,
Martin Wörle,
Dana Bloß,
Andreas Duensing,
Reinhard Kienberger,
Andreas Hans,
Hristo Iglev,
André Knie,
Wolfram Helml
Abstract:
The toolbox for time-resolved direct measurements of electron dynamics covers a variety of methods. Since the experimental effort is increasing rapidly with achievable time resolution, there is an urge for simple and robust measurement techniques. Within this paper prove of concept experiments and numerical simulations are utilized to investigate the applicability of a new setup for the generation…
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The toolbox for time-resolved direct measurements of electron dynamics covers a variety of methods. Since the experimental effort is increasing rapidly with achievable time resolution, there is an urge for simple and robust measurement techniques. Within this paper prove of concept experiments and numerical simulations are utilized to investigate the applicability of a new setup for the generation of ultrashort electron pulses in the energy range of 300 eV up to 1.6 keV. The experimental approach combines an in-vacuum liquid microjet and a few-cycle femtosecond laser system, while the threshold for electron impact ionization serves as a gate for the effective electron pulse duration. The experiments prove that electrons in the keV regime are accessible and that the electron spectrum can be easily tuned by laser intensity and focal position alignment with respect to the water jet. Numerical simulations show that a sub-picosecond temporal resolution is achievable.
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Submitted 19 October, 2021;
originally announced October 2021.
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Magnetic correlations in triangular antiferromagnet FeGa$_2$S$_4$
Authors:
K. Guratinder,
M. Schmidt,
H. C. Walker,
R. Bewley,
M. Wörle,
D. Cabra,
S. A. Osorio,
M. Villalba,
A. K. Madsen,
L. Keller,
A. Wildes,
P. Puphal,
A. Cervellino,
Ch. Rüegg,
O. Zaharko
Abstract:
The crystal structure and magnetic correlations in triangular antiferromagnet FeGa$_2$S$_4$ are studied by x-ray diffraction, magnetic susceptibility, neutron diffraction and neutron inelastic scattering. We report significant mixing at the cation sites and disentangle magnetic properties dominated by major and minor magnetic sites. The magnetic short-range correlations at 0.77 Å$^{-1}$ correspond…
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The crystal structure and magnetic correlations in triangular antiferromagnet FeGa$_2$S$_4$ are studied by x-ray diffraction, magnetic susceptibility, neutron diffraction and neutron inelastic scattering. We report significant mixing at the cation sites and disentangle magnetic properties dominated by major and minor magnetic sites. The magnetic short-range correlations at 0.77 Å$^{-1}$ correspond to the major sites and being static at base temperature they evolve into dynamic correlations around 30 - 50 K. The minor sites contribute to the magnetic peak at 0.6 Å$^{-1}$, which vanishes at 5.5 K. Our analytical studies of triangular lattice models with bilinear and biquadratic terms provide the ratios between exchanges for the proposed ordering vectors. The modelling of the inelastic neutron spectrum within linear spin wave theory results in the set of exchange couplings $J_1=1.7$\,meV, $J_2=0.9$\,meV, $J_3=0.8$\,meV for the bilinear Heisenberg Hamiltonian. However, not all features of the excitation spectrum are explained with this model.
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Submitted 14 July, 2021;
originally announced July 2021.
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Ultrafast hot carrier relaxation in silicon monitored by phase-resolved transient absorption spectroscopy
Authors:
Martin Wörle,
Alexander W. Holleitner,
Reinhard Kienberger,
Hristo Iglev
Abstract:
The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong electron-phonon coupling leads to an ultrafast momentum relaxation with time constant of 10 fs. The thermalization of the hot carriers occurs on a time constant o…
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The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong electron-phonon coupling leads to an ultrafast momentum relaxation with time constant of 10 fs. The thermalization of the hot carriers occurs on a time constant of 150 fs, visible in the temporal evolution of the collision time as extracted from the Drude model. We find an increase of the collision time from 3 fs for the shortest timescales with a saturation at approximately 18 fs. Moreover, the optical effective mass of the hot carrier ensemble evolves on ultrafast timescales as well, with a bi-exponential decrease from 0.7 $m_e$ to about 0.125 $m_e$ and time constants of 4 fs and 58 fs. The presented information on the electron mass dynamics as well as the momentum-, energy-, and collision-scattering times with unprecedented time resolution is important for all hot carrier optoelectronic devices.
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Submitted 5 January, 2021;
originally announced January 2021.
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Towards femtosecond on-chip electronics
Authors:
Christopher Karnetzky,
Philipp Zimmermann,
Christopher Trummer,
Carolina Duque-Sierra,
Martin Wörle,
Reinhard Kienberger,
Alexander Holleitner
Abstract:
To combine the advantages of ultrafast femtosecond optics with an on-chip communcation scheme, optical signals with a frequency of several hundreds of THz need to be down-converted to coherent electronic signals of GHz or less. So far, this has not been achieved because of the impedance mismatch within electronic circuits and their overall slow response-time. Here, we demonstrate that 14 fs optica…
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To combine the advantages of ultrafast femtosecond optics with an on-chip communcation scheme, optical signals with a frequency of several hundreds of THz need to be down-converted to coherent electronic signals of GHz or less. So far, this has not been achieved because of the impedance mismatch within electronic circuits and their overall slow response-time. Here, we demonstrate that 14 fs optical pulses in the near-infrared (NIR) can drive electronic on-chip circuits with a bandwidth up to 10 THz. The corresponding electronic pulses propagate in microscopic striplines on a millimeter scale. We exploit femtosecond photoswitches based on tunneling barriers in nanoscale metal junctions to drive the pulses. The non-linear ultrafast response is based on a combination of plasmonically enhanced, multi-photon absorption and quantum tunneling, and gives rise to a field emission of ballistic electrons propagating across the nanoscale junctions. Our results pave the way towards femtosecond electronics integrated in waferscale quantum circuits.
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Submitted 1 August, 2017;
originally announced August 2017.
