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Transport of Massless Dirac Fermions in Non-topological Type Edge States
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties…
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There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene
Authors:
Yu. I. Latyshev,
A. P. Orlov,
A. V. Frolov,
V. A. Volkov,
I. V. Zagorodnev,
V. A. Skuratov,
Yu. V. Petrov,
O. F. Vyvenko,
D. Yu. Ivanov,
M. Konczykowski,
P. Monceau
Abstract:
The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in z…
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The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of the Fermi level through an equidistant ladder of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from…
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Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skip** cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene
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Submitted 3 October, 2013;
originally announced October 2013.
