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The shape memory effect and minimal surfaces
Authors:
Mengdi Yin,
Dimitri D. Vvedensky
Abstract:
Martensitic transformations, viewed as continuous transformations between triply periodic minimal surfaces (TPMS), as originally proposed by Hyde and Andersson [Z. Kristallogr. 174, 225 (1986)], is extended to include paths between the initial and final phases. Bravais lattices correspond to particular TPMS whose lattice points are flat points, where the Gaussian curvature vanishes. Reversible tra…
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Martensitic transformations, viewed as continuous transformations between triply periodic minimal surfaces (TPMS), as originally proposed by Hyde and Andersson [Z. Kristallogr. 174, 225 (1986)], is extended to include paths between the initial and final phases. Bravais lattices correspond to particular TPMS whose lattice points are flat points, where the Gaussian curvature vanishes. Reversible transformations, which correspond to shape memory materials, occur only if lattice points remain at flat points on a TPMS throughout a continuous deformation. For the shape memory material NiTi, density-functional theory (DFT) yields irreversible and reversible paths with and without energy barriers, respectively. Although there are TPMS for face-centered gamma-Fe) and body-centered (alpha-Fe) cubic lattices, gamma to alpha deformation paths are not reversible, in agreement with non-vanishing energy barriers obtained from DFT.
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Submitted 1 February, 2024;
originally announced February 2024.
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Quantum effects in an expanded Black-Scholes model
Authors:
Anantya Bhatnagar,
Dimitri D. Vvedensky
Abstract:
The limitations of the classical Black-Scholes model are examined by comparing calculated and actual historical prices of European call options on stocks from several sectors of the S&P 500. Persistent differences between the two prices point to an expanded model proposed by Segal and Segal (1998) in which information not simultaneously observable or actionable with public information can be repre…
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The limitations of the classical Black-Scholes model are examined by comparing calculated and actual historical prices of European call options on stocks from several sectors of the S&P 500. Persistent differences between the two prices point to an expanded model proposed by Segal and Segal (1998) in which information not simultaneously observable or actionable with public information can be represented by an additional pseudo-Wiener process. A real linear combination of the original and added processes leads to a commutation relation analogous to that between a boson field and its canonical momentum in quantum field theory. The resulting pricing formula for a European call option replaces the classical volatility with the norm of a complex quantity, whose imaginary part is shown to compensate for the disparity between prices obtained from the classical Black-Scholes model and actual prices of the test call options. This provides market evidence for the influence of a non-classical process on the price of a security based on non-commuting operators.
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Submitted 15 March, 2022;
originally announced March 2022.
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Path Integral Renormalization of Flow through Random Porous Media
Authors:
Umut C. Özer,
Peter R. King,
Dimitri D. Vvedensky
Abstract:
The path integral for Darcy's law with a stochastic conductivity, which characterizes flow through random porous media, is used as a basis for Wilson renormalization-group (RG) calculations in momentum space. A coarse graining procedure is implemented by integrating over infinitesimal shells of large momenta corresponding to the elimination of the small scale modes of the theory. The resulting one…
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The path integral for Darcy's law with a stochastic conductivity, which characterizes flow through random porous media, is used as a basis for Wilson renormalization-group (RG) calculations in momentum space. A coarse graining procedure is implemented by integrating over infinitesimal shells of large momenta corresponding to the elimination of the small scale modes of the theory. The resulting one-loop $β$-functions are solved exactly to obtain an effective conductivity in a coarse grained theory over successively larger length scales. We first carry out a calculation with uncorrelated Gaussian conductivity fluctuations to illustrate the RG procedure before considering the effect of a finite correlation length of conductivity fluctuations. We conclude by discussing applications and extensions of our calculations, including comparisons with the numerical evaluation of path integrals, non-Gaussian fluctuations, and multiphase flow, for which the path integral formulation should prove particularly useful.
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Submitted 25 November, 2019;
originally announced November 2019.
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Pressure and flow statistics of Darcy flow from simulated annealing
Authors:
Marise J. E. Westbroek,
Peter R. King,
Dimitri D. Vvedensky,
Ronnie L. Schwede
Abstract:
The pressure and flow statistics of Darcy flow through a random permeable medium are expressed in a form suitable for evaluation by the method of simulated annealing. There are several attractive aspects to using simulated annealing: (i) any probability distribution can be used for the permeability, (ii) there is no need to invert the transmissibility matrix which, while not a factor for single-ph…
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The pressure and flow statistics of Darcy flow through a random permeable medium are expressed in a form suitable for evaluation by the method of simulated annealing. There are several attractive aspects to using simulated annealing: (i) any probability distribution can be used for the permeability, (ii) there is no need to invert the transmissibility matrix which, while not a factor for single-phase flow, offers distinct advantages for the case of multiphase flow, and (iii) the action used for simulated annealing is eminently suitable for coarse graining by integrating over the short-wavelength degrees of freedom. In this paper, we show that the pressure and flow statistics obtained by simulated annealing are in excellent agreement with the more conventional finite-volume calculations.
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Submitted 3 April, 2019; v1 submitted 22 March, 2019;
originally announced March 2019.
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Path integral Monte Carlo method for the quantum anharmonic oscillator
Authors:
Shikhar Mittal,
Marise J. E. Westbroek,
Peter R. King,
Dimitri D. Vvedensky
Abstract:
The Markov chain Monte Carlo (MCMC) method is used to evaluate the imaginary-time path integral of a quantum oscillator with a potential that includes both a quadratic term and a quartic term whose coupling is varied by several orders of magnitude. This path integral is discretized on a time lattice and calculations for the energy and probability density of the ground state and energies of the fir…
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The Markov chain Monte Carlo (MCMC) method is used to evaluate the imaginary-time path integral of a quantum oscillator with a potential that includes both a quadratic term and a quartic term whose coupling is varied by several orders of magnitude. This path integral is discretized on a time lattice and calculations for the energy and probability density of the ground state and energies of the first few excited states are carried out on lattices with decreasing spacing to estimate these quantities in the continuum limit. The variation of the quartic coupling constant produces corresponding variations in the optimum simulation parameters for the MCMC method and in the statistical uncertainty for a fixed number of paths used for measurement. The energies and probability densities are in excellent agreement with those obtained from numerical solutions of Schrödinger's equation.
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Submitted 26 August, 2020; v1 submitted 12 November, 2018;
originally announced November 2018.
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Pressure statistics from the path integral for Darcy flow through random porous media
Authors:
Marise J. E. Westbroek,
Gil-Arnaud Coche,
Peter R. King,
Dimitri D. Vvedensky
Abstract:
The path integral for classical statistical dynamics is used to determine the properties of one-dimensional Darcy flow through a porous medium with a correlated stochastic permeability for several spatial correlation lengths. Pressure statistics are obtained from the numerical evaluation of the path integral by using the Markov chain Monte Carlo method. Comparisons between these pressure distribut…
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The path integral for classical statistical dynamics is used to determine the properties of one-dimensional Darcy flow through a porous medium with a correlated stochastic permeability for several spatial correlation lengths. Pressure statistics are obtained from the numerical evaluation of the path integral by using the Markov chain Monte Carlo method. Comparisons between these pressure distributions and those calculated from the classic finite-volume method for the corresponding stochastic differential equation show excellent agreement for Dirichlet and Neumann boundary conditions. The evaluation of the variance of the pressure based on a continuum description of the medium provides an estimate of the effects of discretization. Log-normal and Gaussian fits to the pressure distributions as a function of position within the porous medium are discussed in relation to the spatial extent of the correlations of the permeability fluctuations.
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Submitted 5 November, 2018;
originally announced November 2018.
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Evaluation of the path integral for flow through random porous media
Authors:
Marise J. E. Westbroek,
Gil-Arnaud Coche,
Peter R. King,
Dimitri D. Vvedensky
Abstract:
We present a path integral formulation of Darcy's equation in one dimension with random permeability described by a correlated multi-variate lognormal distribution. This path integral is evaluated with the Markov chain Monte Carlo method to obtain pressure distributions, which are shown to agree with the solutions of the corresponding stochastic differential equation for Dirichlet and Neumann boun…
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We present a path integral formulation of Darcy's equation in one dimension with random permeability described by a correlated multi-variate lognormal distribution. This path integral is evaluated with the Markov chain Monte Carlo method to obtain pressure distributions, which are shown to agree with the solutions of the corresponding stochastic differential equation for Dirichlet and Neumann boundary conditions. The extension of our approach to flow through random media in two and three dimensions is discussed.
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Submitted 20 March, 2018;
originally announced March 2018.
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Self-ordered nanostructures on patterned substrates: Experiment and theory of metalorganic vapor-phase epitaxy of V-groove quantum wires and pyramidal quantum dots
Authors:
Emanuele Pelucchi,
Stefano T. Moroni,
Valeria Dimastrodonato,
Dimitri D. Vvedensky
Abstract:
The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during nanostructure formation and the theory and modelling that explained the phenomenology in successively greater detail. Experiments have demonstrated that V-groove quantum w…
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The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during nanostructure formation and the theory and modelling that explained the phenomenology in successively greater detail. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots result from self-limiting concentration profiles that develop at the bottom of V-grooves and inverted pyramids, respectively. In the 1950s, long before the practical importance of patterned substrates became evident, the mechanisms of capillarity during the equilibration of non-planar surfaces were identified and characterized. This was followed, from the late 1980s by the identification of growth rate anisotropies (i.e. differential growth rates of crystallographic facets) and precursor decomposition anisotropies, with parallel developments in the fabrication of V-groove quantum wires and pyramidal quantum dots. The modelling of these growth processes began at the scale of facets and culminated in systems of coupled reaction-diffusion equations, one for each crystallographic facet that defines the pattern, which takes account of the decomposition and surface diffusion kinetics of the group-III precursors and the subsequent surface diffusion and incorporation of the group-III atoms released by these precursors. Solutions of the equations with optimized parameters produced concentration profiles that provided a quantitative interpretation of the time-, temperature-, and alloy-concentration dependence of the self-ordering process seen in experiments.
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Submitted 8 February, 2018;
originally announced February 2018.
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User's guide to Monte Carlo methods for evaluating path integrals
Authors:
Marise J. E. Westbroek,
Peter R. King,
Dimitri D. Vvedensky,
Stephan Durr
Abstract:
We give an introduction to the calculation of path integrals on a lattice, with the quantum harmonic oscillator as an example. In addition to providing an explicit computational setup and corresponding pseudocode, we pay particular attention to the existence of autocorrelations and the calculation of reliable errors. The over-relaxation technique is presented as a way to counter strong autocorrela…
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We give an introduction to the calculation of path integrals on a lattice, with the quantum harmonic oscillator as an example. In addition to providing an explicit computational setup and corresponding pseudocode, we pay particular attention to the existence of autocorrelations and the calculation of reliable errors. The over-relaxation technique is presented as a way to counter strong autocorrelations. The simulation methods can be extended to compute observables for path integrals in other settings.
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Submitted 2 April, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
Authors:
Stefano T. Moroni,
Valeria Dimastrodonato,
Tung-Hsun Chung,
Gediminas Juska,
Agnieszka Gocalinska,
Dimitri D. Vvedensky,
Emanuele Pelucchi
Abstract:
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and ad…
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We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature, concentration, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In$_{0.25}$Ga$_{0.75}$As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.
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Submitted 11 April, 2016;
originally announced April 2016.
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Growth of Epitaxial Graphene: Theory and Experiment
Authors:
H. Tetlow,
J. Posthuma de Boer,
I. J. Ford,
D. D. Vvedensky,
J. Coraux,
L. Kantorovich
Abstract:
A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of importan…
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A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.
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Submitted 22 February, 2016;
originally announced February 2016.
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Unusual nanostructures of "lattice matched" InP on AlInAs
Authors:
A. Gocalinska,
M. Manganaro,
G. Juska,
V. Dimastrodonato,
K. Thomas,
B. A. Joyce,
J. Zhang,
D. D. Vvedensky,
E. Pelucchi
Abstract:
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase s…
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We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology
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Submitted 10 April, 2014;
originally announced April 2014.
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Topological insulators, spin, and the tight-binding method
Authors:
Warren J. Elder,
Eng Soon Tok,
Dimitri D. Vvedensky,
**g Zhang
Abstract:
As one of the first proposed topologically protected states, the quantum spin Hall effect in graphene relies critically on the existence of a spin-dependent gap at the K/K' points of the Brillouin zone. Using a tight-binding formulation based on the method of invariants, we identify the origin of such an intrinsic gap as the three-center interaction between the pi-orbitals caused by spin-orbit int…
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As one of the first proposed topologically protected states, the quantum spin Hall effect in graphene relies critically on the existence of a spin-dependent gap at the K/K' points of the Brillouin zone. Using a tight-binding formulation based on the method of invariants, we identify the origin of such an intrinsic gap as the three-center interaction between the pi-orbitals caused by spin-orbit interactions. This methodology incorporates all symmetry compliant interactions previously neglected and has wider applications for comparisons between first-principle calculations and the tight-binding method. It also identifies a correction to the Haldane model and its generalization, which incorporates the spin degrees of freedom and reproduces all the salient features required for the quantum spin Hall effect in graphene.
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Submitted 9 July, 2013; v1 submitted 11 June, 2013;
originally announced June 2013.
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Transient and self-limited nanostructures on patterned surfaces
Authors:
V. Dimastrodonato,
E. Pelucchi,
P. A. Zestanakis,
D. D. Vvedensky
Abstract:
Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the vertical axis of the template. We describe a theoretical scheme that reproduces the experimentally-observed time-dependent behavior of this process, including the evol…
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Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the vertical axis of the template. We describe a theoretical scheme that reproduces the experimentally-observed time-dependent behavior of this process, including the evolution of the recess and the increase of Ga incorporation along the base of the template to stationary values determined by alloy composition and other growth parameters. Our work clarifies the interplay between kinetics and geometry for the development of self-ordered nanostructures on patterned surfaces, which is essential for the reliable on-demand design of confined systems for applications to quantum optics.
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Submitted 10 June, 2013;
originally announced June 2013.
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Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
Authors:
A. Gocalinska,
M. Manganaro,
D. D. VVedensky,
E. Pelucchi
Abstract:
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging f…
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We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These observations suggest a window of growth parameters for optimal quality epitaxial layers. We also present a theoretical model for these growth modes that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for step flow and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges, as was discussed previously for GaAs (001).
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Submitted 1 November, 2012;
originally announced November 2012.
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Probability distributions for measures of placental shape and morphology
Authors:
Joshua S. Gill,
Mischa P. Woods,
Carolyn M. Salafia,
Dimitri D. Vvedensky
Abstract:
Weight at delivery is a standard cumulative measure of placental growth. But weight is a crude summary of other placental characteristics, such as the size and shape of the chorionic plate and the location of the umbilical cord insertion. Distributions of such measures across a cohort reveal information about the developmental history of the chorionic plate that is unavailable from an analysis bas…
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Weight at delivery is a standard cumulative measure of placental growth. But weight is a crude summary of other placental characteristics, such as the size and shape of the chorionic plate and the location of the umbilical cord insertion. Distributions of such measures across a cohort reveal information about the developmental history of the chorionic plate that is unavailable from an analysis based solely on the mean and standard deviation. Various measures were determined from digitized images of chorionic plates obtained from the Pregnancy, Infection, and Nutrition Study, a prospective cohort study of preterm birth in central North Carolina between 2002 and 2004. The centroids (the geometric centers) and umbilical cord insertions were taken directly from the images. The chorionic plate outlines were obtained from an interpolation based on a Fourier series, while eccentricity (of the best-fit ellipse), skewness, and kurtosis were determined from a shape analysis using the method of moments. The distribution of each variable was compared against the normal, lognormal, and Levy distributions. We found only a single measure (eccentricity) with a normal distribution. All other placental measures required lognormal or "heavy-tailed" distributions to account for moderate to extreme deviations from the mean, where relative likelihoods in the cohort far exceeded those of a normal distribution. Normal and lognormal distributions result from the accumulated effects of a large number of independent additive (normal) or multiplicative (lognormal) events. Thus, while most placentas appear to develop by a series of small, regular, and independent steps, the presence of heavy-tailed distributions suggests that many show shape features which are more consistent with a large number of correlated steps or fewer, but substantially larger, independent steps.
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Submitted 9 September, 2011;
originally announced September 2011.
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Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures
Authors:
E. Pelucchi,
V. Dimastrodonato,
A. Rudra,
K. Leifer,
E. Kapon,
L. Bethke,
P. Zestanakis,
D. D. Vvedensky
Abstract:
We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots form as a consequence of a self-limiting profile that develops, respectively, at the bottom of V-grooves and inverte…
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We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots form as a consequence of a self-limiting profile that develops, respectively, at the bottom of V-grooves and inverted pyramids. Our model is based on a system of reaction-diffusion equations, one for each crystallographic facet that defines the pattern, and include the group III precursors, their decomposition and diffusion kinetics (for which we discuss the experimental evidence), and the subsequent diffusion and incorporation kinetics of the group-III atoms released by the precursors. This approach can be applied to any facet configuration, including pyramidal quantum dots, but we focus on the particular case of V-groove templates and offer an explanation for the self-limited profile and the Ga segregation observed in the V-groove. The explicit inclusion of the precursor decomposition kinetics and the diffusion of the atomic species revises and generalizes the earlier work of Basiol et al. [Phys. Rev. Lett. 81, 2962 (1998); Phys. Rev. B 65, 205306 (2002)] and is shown to be essential for obtaining a complete description of self-limiting growth. The solution of the system of equations yields spatially resolved adatom concentrations, from which average facet growth rates are calculated. This provides the basis for determining the conditions that yield selflimiting growth. The foregoing scenario, previously used to account for the growth modes of vicinal GaAs(001) during MOVPE and the step-edge profiles on the ridges of vicinal surfaces patterned with V-grooves, can be used to describe the morphological evolution of any template composed of distinct facets.
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Submitted 16 August, 2011;
originally announced August 2011.
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Novel growth mechanism of epitaxial graphene on metals
Authors:
Andrew Zangwill,
Dimitri D. Vvedensky
Abstract:
Graphene, a hexagonal sheet of $sp^2$-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challen…
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Graphene, a hexagonal sheet of $sp^2$-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challenges, not least of which is the absence of an understanding of the complex atomistic assembly kinetics of graphene. Here, we present a simple rate theory of epitaxial graphene growth on close-packed metal surfaces. Based on recent low-energy electron-diffraction microscopy experiments (LEEM) \cite{loginova09}, our theory supposes that graphene islands grow predominantly by the addition of five-atom clusters, rather than solely by the capture of diffusing carbon atoms. With suitably chosen kinetic parameters, our theory produces a time-dependent carbon adatom density that is in quantitative agreement with measured data. The temperature-dependence of this adatom density at the onset of nucleation leads us to predict that the smallest stable precursor to graphene growth is an immobile island composed of six five-atom clusters. Our findings provide a starting point for more detailed simulations which will yield important input to develo** strategies for the large-scale production of epitaxial graphene.
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Submitted 22 November, 2010;
originally announced November 2010.
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Statistical thermodynamics and weighted topology of radial networks
Authors:
Rak-Kyeong Seong,
Dimitri D. Vvedensky
Abstract:
We propose a method of characterizing radial networks based on a partition function associated with the structural triangulation of the network. The internal energy, Helmholtz free energy, and entropy derived from the partition function are used to group similar networks together and to interrogate the history of their development. We illustrate our methodology for a model for optimal transport i…
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We propose a method of characterizing radial networks based on a partition function associated with the structural triangulation of the network. The internal energy, Helmholtz free energy, and entropy derived from the partition function are used to group similar networks together and to interrogate the history of their development. We illustrate our methodology for a model for optimal transport in tree leaves.
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Submitted 17 May, 2010;
originally announced May 2010.
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Regimes of Precursor-Mediated Epitaxial Growth
Authors:
A. Zangwill,
D. D. Vvedensky
Abstract:
A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the identification of various {\it characteristic length scales} associated with the surface processes. Study of the relative magnitudes of these lengths permits one to iden…
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A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the identification of various {\it characteristic length scales} associated with the surface processes. Study of the relative magnitudes of these lengths permits one to identify regimes of qualitatively different growth kinetics as a function of temperature and deposition flux. The approach is illustrated with a simple model which takes account of deposition, diffusion, desorption, dissociation, and step incorporation of a single precursor species, as well as the usual processes of atomic diffusion and step incorporation. Experimental implications are discussed in some detail.
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Submitted 8 December, 2007;
originally announced December 2007.
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Monte Carlo simulation of GaAs(001) homoepitaxy
Authors:
M. Itoh,
G. R. Bell,
B. A. Joyce,
D. D. Vvedensky
Abstract:
By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structural transformation before adopting the proper beta2(2x4) reconstruction.
By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structural transformation before adopting the proper beta2(2x4) reconstruction.
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Submitted 21 April, 2000;
originally announced April 2000.
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Noise-assisted Mound Coarsening in Epitaxial Growth
Authors:
L. -H. Tang,
P. Smilauer,
D. D. Vvedensky
Abstract:
We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in lat…
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We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in late-stage coarsening yields a scaling relation between the coarsening exponent 1/z and the mound height exponent βwhich, in the case of saturated mound slope, gives β= 1/z = 1/4.
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Submitted 5 March, 1997;
originally announced March 1997.
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Re-entrant Layer-by-Layer Etching of GaAs(001)
Authors:
T. Kaneko,
P. Šmilauer,
B. A. Joyce,
T. Kawamura,
D. D. Vvedensky
Abstract:
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temp…
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We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration.
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Submitted 21 March, 1995;
originally announced March 1995.
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Submonolayer Epitaxy Without A Critical Nucleus
Authors:
C. Ratsch,
P. Šmilauer,
A. Zangwill,
D. D. Vvedensky
Abstract:
The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find…
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The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find that the ratio of the dimer dissociation rate to the rate of adatom capture by dimers uniquely indexes both the island size distribution scaling function and the dependence of the island density on the flux and the substrate temperature. Effective pair-bond model parameters are found that yield excellent quantitative agreement with scaling functions measured for Fe/Fe(001).
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Submitted 21 March, 1995;
originally announced March 1995.
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Step edge barriers on GaAs(001)
Authors:
Pavel Šmilauer,
Dimitri D. Vvedensky
Abstract:
We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of fr…
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We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.
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Submitted 29 November, 1993;
originally announced November 1993.
