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Polymer Thin Films as Universal Substrates for Extreme Ultraviolet Absorption Spectroscopy of Molecular Transition Metal Complexes
Authors:
Yusef Shari'ati,
Josh Vura-Weis
Abstract:
Polystyrene and polyvinyl chloride thin films are explored as sample supports for extreme ultraviolet (XUV) spectroscopy of molecular transition metal complexes. Thin polymer films prepared by slip-coating are flat, smooth, and transmit much more XUV light than silicon nitride windows. Analytes can be directly cast onto the polymer surface, or codeposited within it. The M-edge x-ray absorption nea…
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Polystyrene and polyvinyl chloride thin films are explored as sample supports for extreme ultraviolet (XUV) spectroscopy of molecular transition metal complexes. Thin polymer films prepared by slip-coating are flat, smooth, and transmit much more XUV light than silicon nitride windows. Analytes can be directly cast onto the polymer surface, or codeposited within it. The M-edge x-ray absorption near-edge (XANES) spectra (40-90 eV) of eight archetypal transition metal complexes (M=Mn, Fe, Co, Ni) are presented to demonstrate the versatility of this method. The films are suitable for pump/probe transient absorption spectroscopy, as shown by the excited-state spectra of Fe(bpy)$_3^{2+}$ in two different polymer supports.
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Submitted 16 August, 2021;
originally announced August 2021.
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Improved Charge Transfer Multiplet Method to Simulate M- and L-Edge X-ray Absorption Spectra of Metal-Centered Excited States
Authors:
Kaili Zhang,
Gregory S. Girolami,
Josh Vura-Weis
Abstract:
Charge transfer multiplet (CTM) theory is a computationally undemanding and highly mature method for simulating the soft X-ray spectra of first-row transition metal complexes. However, CTM theory has seldom been applied to the simulation of excited state spectra. In this article, we extend the CTM4XAS software package to simulate M2,3- and L2,3-edge spectra of excited states of first-row transitio…
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Charge transfer multiplet (CTM) theory is a computationally undemanding and highly mature method for simulating the soft X-ray spectra of first-row transition metal complexes. However, CTM theory has seldom been applied to the simulation of excited state spectra. In this article, we extend the CTM4XAS software package to simulate M2,3- and L2,3-edge spectra of excited states of first-row transition metals and to interpret CTM eigenfunctions in terms of Russell-Saunders term symbols. We use these new programs to reinterpret the recently reported excited state M2,3-edge difference spectra of photogenerated ferrocenium cations and propose alternative assignments for the electronic state of the photogenerated ferrocenium cations supported by CTM theory simulations. We also use these new programs to model the L2,3-edge spectra of FeII compounds during nuclear relaxation following photoinduced spin crossover, and propose spectroscopic signatures for their vibrationally hot states
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Submitted 2 March, 2018;
originally announced March 2018.
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Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination
Authors:
Ming-Fu Lin,
Max Verkamp,
Joshua Leveillee,
Elizabeth Ryland,
Kristin Benke,
Kaili Zhang,
Clemens Weninger,
Xiaozhe Shen,
Renkai Li,
David Fritz,
Uwe Bergmann,
Xijie Wang,
André Schleife,
Josh Vura-Weis
Abstract:
Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measures transitions from the iodine 4d core level to the conduction band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for hole…
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Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measures transitions from the iodine 4d core level to the conduction band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band and therefore the XUV absorption spectrum is temperature dependent, and nonradiative recombination converts the initial electronic excitation to thermal excitation within picoseconds. Ultrafast electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. The XUV and UED results support a 2nd-order recombination model with a rate constant of 2.5x10-9 cm3/s.
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Submitted 2 March, 2018; v1 submitted 9 March, 2017;
originally announced March 2017.
