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Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Authors:
Max Bergmann,
Jürgen Belz,
Oliver Maßmeyer,
Badrosadat Ojaghi Dogahe,
Robin Günkel,
Johannes Glowatzki,
Andreas Beyer,
Ivan Solovev,
Jens-Christian Drawer,
Martin Esmann,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Stefan Wippermann,
Kerstin Volz
Abstract:
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated…
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In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated electron energy loss spectroscopy in a scanning transmission electron microscope is employed to characterize the excitonic spectrum of WS2 on graphene grown by metal organic chemical vapor deposition. This technique provides the required spatial resolution at the nanometer scale in combination with high quality spectra. To complement the experimental results, theoretical investigations using density functional theory and applying the Bethe-Salpeter equations are conducted. We find that by transitioning from mono- to bi- to multilayers of WS2 the spectra show redshifts for both, the K-valley excitons at about 2.0 and 2.4 eV as well as excitonic features of higher energies. The latter features originate from so called band nesting of transitions between the Gamma- and K-point. In summary, this study provides valuable insights into the excitonic properties of WS2 in different layer configurations and environments, which are realistically needed for future device fabrication and property tuning. Finally, we can show that nanometer scale electron spectroscopy supported by careful theoretical modelling can successfully link atomic structure and optical properties, such as exciton shifts, in non-idealized complex material systems like multilayer 2D heterostructures.
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Submitted 20 February, 2024;
originally announced February 2024.
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A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures
Authors:
Oliver Maßmeyer,
Jürgen Belz,
Badrosadat Ojaghi Dogahe,
Maximilian Widemann,
Robin Günkel,
Johannes Glowatzki,
Max Bergmann,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Andreas Beyer,
Kerstin Volz
Abstract:
Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise cont…
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Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise control of the in-plane twist angle in these heterostructures are essential to achieve superior properties and need to be established through large-scale device fabrication. To gain fundamental insight into the control of these twist angles, 2D heterostructures of tungsten disulfide (WS2) and graphene grown by bottom-up synthesis via metal-organic chemical vapor deposition (MOCVD) are investigated using a scanning transmission electron microscope (STEM). Specifically, the combination of conventional high-resolution imaging with scanning nano beam diffraction (SNBD) using advanced 4D STEM techniques is used to analyze moiré structures. The latter technique is used to reveal the epitaxial alignment within the WS2/Gr heterostructure, showing a direct influence of the underlying graphene layers on the moiré formation in the subsequent WS2 layers. In particular, the importance of grain boundaries within the underlying WS2 and Gr layers for the formation of moiré patterns with rotation angles below 2° is discussed.
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Submitted 8 February, 2024;
originally announced February 2024.
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Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)
Authors:
Gerson Mette,
Kunie Ishioka,
Steven Youngkin,
Wolfgang Stolz,
Kerstin Volz,
Ulrich Höfer
Abstract:
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a cohe…
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Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states.
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Submitted 7 May, 2023;
originally announced May 2023.
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Structure Determination in a new Type of Amorphous Molecular Solids with Different Nonlinear Optical Properties: A Comparative Structural Analysis
Authors:
Jonathan Link Vasco,
Jens Ruediger Stellhorn,
Benjamin Danilo Klee,
Benedict Paulus,
Juergen Belz,
Johannes Haust,
Shinya Hosokawa,
Shinjiro Hayakawa,
Kerstin Volz,
Iran Rojas León,
Jan Christmann,
Stefanie Dehnen,
Wolf-Christian Pilgrim
Abstract:
The microscopic structure of two amorphous materials with extreme nonlinear optical properties has been studied. One of these materials exhibits second harmonic generation, while another material of similar molecular structure emits brilliant white light if being irradiated with a simple IR laser diode. Structural differences were investigated using X-ray scattering and EXAFS combined with molecul…
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The microscopic structure of two amorphous materials with extreme nonlinear optical properties has been studied. One of these materials exhibits second harmonic generation, while another material of similar molecular structure emits brilliant white light if being irradiated with a simple IR laser diode. Structural differences were investigated using X-ray scattering and EXAFS combined with molecular RMC. Transmission electron microscopy and scanning precession electron diffraction were used to understand specific structural differences on all length scales, from mesoscopic down to mutual molecular arrangements. Characteristic differences were found at all scales. Close core-core spacing between {SnS} clusters as well as characteristic cluster distortions appear to be characteristic features of the white light emitting material. In the other material, cores are undistorted and core distances are larger. There, the formation of nanocrystalline structures in the amorphous matrix could also be identified as reason for the WLG suppression.
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Submitted 1 March, 2023;
originally announced March 2023.
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Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
Authors:
Badal Mondal,
Marcel Kröner,
Thilo Hepp,
Kerstin Volz,
Ralf Tonner-Zech
Abstract:
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible target structures are hampered by the tremendous effort to optimize the material synthesis for every target structure. We present an approach based on density…
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Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible target structures are hampered by the tremendous effort to optimize the material synthesis for every target structure. We present an approach based on density functional theory efficiently capable of providing the bandgap as a function of composition and strain. Using a specific density functional designed for accurate bandgap computation (TB09) together with a band unfolding procedure and special quasirandom structures, we develop a computational protocol efficiently able to predict bandgaps. The approach's accuracy is validated by comparison to selected experimental data. We thus map the phase space of composition and strain (we call this the ``bandgap phase diagram'') for several important III-V compound semiconductors: GaAsP, GaAsN, GaPSb, GaAsSb, GaPBi, and GaAsBi. We show the application of these diagrams for identifying the most promising materials for device design. Furthermore, our computational protocol can easily be generalized to explore the vast chemical space of III-V materials with all other possible combinations of III- and V-elements.
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Submitted 26 June, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM
Authors:
Varun Shankar Chejarla,
Shamail Ahmed,
Jürgen Belz,
Jonas Scheunert,
Andreas Beyer,
Kerstin Volz
Abstract:
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery materials is determined by the electric fields established at interfaces which can also vary spatially. In this study, we propose momentum-resolved four-dimension…
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Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery materials is determined by the electric fields established at interfaces which can also vary spatially. In this study, we propose momentum-resolved four-dimensional scanning transmission electron microscopy (4D-STEM) for the quantification of these potentials and show the optimization steps required to reach quantitative agreement with simulations for the GaAs / AlAs hetero-junction model system. Using STEM the differences in the mean inner potentials (DELTA MIP) of two materials forming an interface and resulting dynamic diffraction effects have to be considered. We show that the measurement quality is significantly improved by precession, energy filtering and a non-zone-axis alignment of the specimen. Complementary simulations yielding a DELTA MIP of 1.3 V confirm that the potential drop due to charge transfer at the intrinsic interface is about 0.1 V, in agreement with experimental and theoretical values found in literture. These results show the feasibility of accurately measuring built-in potentials across hetero-interfaces of real device structures and its promising application for more complex interfaces of other polycrystalline materials on the nanometer scale.
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Submitted 26 January, 2023;
originally announced January 2023.
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Ultra-Broadband Visible and Infrared Light Generation Driven by Far Infrared Light in the Broad Region from 8μm to 240μm
Authors:
Nils W. Rosemann,
Robin C. Döring,
Eike Dornsiepen,
Jürgen Belz,
Johannes Haust,
Felix Bernhardt,
Ferdinand Ziese,
Claudio Attaccalite,
Stephan Winnerl,
Harald Schneider,
Manfred Helm,
Stefanie Dehnen,
Kerstin Volz,
Simone Sanna,
Sangam Chatterjee
Abstract:
The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., whit…
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The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., white light. Nowadays, white-light generation is usually achieved in specially designed photonic fibres requiring high laser intensities. However, in previous studies we showed that amorphous powders of $(PhSn)_4S_6$ cluster-molecules generate white light when they are irradiated by low-intensity near-infrared light. In this study, we use the mid- and far-infrared radiation of a free-electron laser to investigate the same molecules. White-light generation is observed for excitation with wavelength between 8 and 240$μ$ m. While the emitted radiation shows only slight variations, its intensity strongly depends on the excitation wavelength. We then match the wavelength dependent efficiency with the infrared absorption spectra of the material. This comparison shows: whenever the excitation can introduce molecular vibrations, less white light is generated. For all other wavelengths the excitation interacts mostly with the electron system. This shows that the electron system and the molecular backbone are decoupled to a large extent. Our work contributes to the understanding of the nonlinear process that underlies white-light generation in $(PhSn)_4S_6$ cluster molecules. Additionally, it shows the high potential of this material in applications where a broad laser spectrum is desired.
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Submitted 29 April, 2022;
originally announced April 2022.
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Octave-spanning 1 emission across the visible spectrum from single crystalline 1,3,5,7-tetrakis-($p$-methoxyphenyl)adamantane
Authors:
Marius J. Müller,
Ferdinand Ziese,
Jürgen Belz,
Franziska Hüppe,
Saravanan Gowrisankar,
Bastian Bernhardt,
Sebastian Schwan,
Doreen Mollenhauer Peter R. Schreiner,
Kerstin Volz,
Simone Sanna,
Sangam Chatterjee
Abstract:
Sustainable efficient light emitter based solely on elements-of-hope are needed to replace current compounds based on less-abundant materials. Functionalized diamondoids are a potential solution for this challenge as they offer efficient, octave-spanning emission across the visible spectrum in their single-crystalline form. Its large quantum efficiency increases towards higher-than-ambient tempera…
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Sustainable efficient light emitter based solely on elements-of-hope are needed to replace current compounds based on less-abundant materials. Functionalized diamondoids are a potential solution for this challenge as they offer efficient, octave-spanning emission across the visible spectrum in their single-crystalline form. Its large quantum efficiency increases towards higher-than-ambient temperatures to beyond 7 %. The stability beyond 200 °C renders such functionalized diamondoids as sustainable phosphors for LED applications. Detailed structural and theoretical investigations suggest a crucial role of exciton states accompanied by structural modifications (self-trapped excitons) in the emission process.
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Submitted 14 April, 2022;
originally announced April 2022.
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Adamantanes as white-light emitters: Controlling arrangement and functionality by external Coulomb forces
Authors:
Jürgen Belz,
Johannes Haust,
Marius J. Müller,
Kevin Eberheim,
Sebastian Schwan,
Saravanan Gowrisankar,
Franziska Hüppe,
Andreas Beyer,
Peter R. Schreiner,
Doreen Mollenhauer,
Simone Sanna,
Sangam Chatterjee,
Kerstin Volz
Abstract:
Functionalized adamantane molecular cluster materials show highly transient nonlinear optical properties of currently unclear structural origin. Several interaction mechanisms in compounds comprising molecular clusters, their inter- and intramolecular interactions as well as the interplay of their electronic systems and vibrations of their backbone are viable concepts to explain these nonlinear op…
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Functionalized adamantane molecular cluster materials show highly transient nonlinear optical properties of currently unclear structural origin. Several interaction mechanisms in compounds comprising molecular clusters, their inter- and intramolecular interactions as well as the interplay of their electronic systems and vibrations of their backbone are viable concepts to explain these nonlinear optical properties. We show that transient Coulomb forces also have to be considered as they can lead to intramolecular structure transformations and intermolecular rearrangements in the crystal. Both strongly influence the nonlinear optical properties. Moreover, selective bromine functionalization can trigger a photochemical rearrangement of the molecules. The structure and chemical bonding within the compounds are investigated in dependence on the laser irradiation at different stages of their nonlinear emission by electron diffraction and electron energy loss spectroscopy. The transient structural and chemical states observed are benchmarked by similar observations during electron irradiation, which makes quantification of structural changes possible and allows the correlation with first principles calculations. The functionalization and its subsequent usage to exploit photochemical effects can either enhance two-photon absorption or facilitate white-light emission rather than second-harmonic generation.
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Submitted 13 April, 2022;
originally announced April 2022.
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White-light generating molecular materials: correlation between the amorphous/crystalline structure and nonlinear optical properties
Authors:
Johannes Haust,
Jürgen Belz,
Marius Müller,
Benjamin Danilo Klee,
Jonathan Link Vasco,
Franziska Hüppe,
Irán Rojas Léon,
Jan Christmann,
Andreas Beyer,
Stefanie Dehnen,
Nils W. Rosemann,
Wolf-Christian Pilgrim,
Sangam Chatterjee,
Kerstin Volz
Abstract:
Amorphous materials are integral part of todays technology, they commonly are performant and versatile in integration. Consequently, future applications increasingly aim to harvest the potential of the amorphous state. Establishing its structure-property relationship, however, is inherently challenging using diffraction-based techniques yet is extremely desirable for develo** advanced functional…
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Amorphous materials are integral part of todays technology, they commonly are performant and versatile in integration. Consequently, future applications increasingly aim to harvest the potential of the amorphous state. Establishing its structure-property relationship, however, is inherently challenging using diffraction-based techniques yet is extremely desirable for develo** advanced functionalities. In this article, we introduce a set of transmission electron microscopy-based techniques to locally quantify the structure of a material. This unique approach allows to clearly identify the spatial distribution of amorphous and crystalline regions and to quantify atomic arrangements of amorphous regions of a representative model system. We study an ensemble of well-defined, functionalized adamantane-type cluster molecules exhibiting exceptionally promising nonlinear optical properties of unclear origin. The nanoscopic structure for three model compounds ([(PhSn)4S6], [(NpSn)4S6], [(CpSn)4S6]) correlates with their characteristic optical responses. These results highlight the advantageous properties of amorphous molecular materials when understanding the microscopic origin.
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Submitted 11 April, 2022;
originally announced April 2022.
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Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons
Authors:
Kunie Ishioka,
Ethan Angerhoffer,
Christopher J. Stanton,
Gerson Mette,
Kerstin Volz,
Wolfgang Stolz,
Ulrich Höfer
Abstract:
Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The p…
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Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The pump laser pulse can generate coherent longitudinal optical (LO) phonons both in the GaP overlayer as well as in the Si substrate which have distinct frequencies. This enables us to track the amplitude of the respective signal contributions as a function of GaP layer thickness $d$. The Si phonon amplitude in the signal exhibits an oscillatory behavior with increasing $d$. This can be quantitatively explained by the interference of the probe light reflected at the air/GaP/Si heterointerface. Based on this knowledge, we can then separate the interface- and the substrate-contributions in the carrier-induced non-oscillatory transient reflectivity signal. The obtained interface signal provides evidence for ultrafast carrier injection from the Si substrate into the GaP overlayer. This is also corroborated by examining the deviation of the polarization-dependence of the GaP coherent optical phonon signal from that of the bulk semiconductor.
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Submitted 8 October, 2021;
originally announced October 2021.
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Biomedical Information Extraction for Disease Gene Prioritization
Authors:
Jupinder Parmar,
William Koehler,
Martin Bringmann,
Katharina Sophia Volz,
Berk Kapicioglu
Abstract:
We introduce a biomedical information extraction (IE) pipeline that extracts biological relationships from text and demonstrate that its components, such as named entity recognition (NER) and relation extraction (RE), outperform state-of-the-art in BioNLP. We apply it to tens of millions of PubMed abstracts to extract protein-protein interactions (PPIs) and augment these extractions to a biomedica…
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We introduce a biomedical information extraction (IE) pipeline that extracts biological relationships from text and demonstrate that its components, such as named entity recognition (NER) and relation extraction (RE), outperform state-of-the-art in BioNLP. We apply it to tens of millions of PubMed abstracts to extract protein-protein interactions (PPIs) and augment these extractions to a biomedical knowledge graph that already contains PPIs extracted from STRING, the leading structured PPI database. We show that, despite already containing PPIs from an established structured source, augmenting our own IE-based extractions to the graph allows us to predict novel disease-gene associations with a 20% relative increase in hit@30, an important step towards develo** drug targets for uncured diseases.
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Submitted 12 November, 2020; v1 submitted 10 November, 2020;
originally announced November 2020.
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Relation-weighted Link Prediction for Disease Gene Identification
Authors:
Srivamshi Pittala,
William Koehler,
Jonathan Deans,
Daniel Salinas,
Martin Bringmann,
Katharina Sophia Volz,
Berk Kapicioglu
Abstract:
Identification of disease genes, which are a set of genes associated with a disease, plays an important role in understanding and curing diseases. In this paper, we present a biomedical knowledge graph designed specifically for this problem, propose a novel machine learning method that identifies disease genes on such graphs by leveraging recent advances in network biology and graph representation…
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Identification of disease genes, which are a set of genes associated with a disease, plays an important role in understanding and curing diseases. In this paper, we present a biomedical knowledge graph designed specifically for this problem, propose a novel machine learning method that identifies disease genes on such graphs by leveraging recent advances in network biology and graph representation learning, study the effects of various relation types on prediction performance, and empirically demonstrate that our algorithms outperform its closest state-of-the-art competitor in disease gene identification by 24.1%. We also show that we achieve higher precision than Open Targets, the leading initiative for target identification, with respect to predicting drug targets in clinical trials for Parkinson's disease.
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Submitted 13 November, 2020; v1 submitted 10 November, 2020;
originally announced November 2020.
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Chess2vec: Learning Vector Representations for Chess
Authors:
Berk Kapicioglu,
Ramiz Iqbal,
Tarik Koc,
Louis Nicolas Andre,
Katharina Sophia Volz
Abstract:
We conduct the first study of its kind to generate and evaluate vector representations for chess pieces. In particular, we uncover the latent structure of chess pieces and moves, as well as predict chess moves from chess positions. We share preliminary results which anticipate our ongoing work on a neural network architecture that learns these embeddings directly from supervised feedback.
We conduct the first study of its kind to generate and evaluate vector representations for chess pieces. In particular, we uncover the latent structure of chess pieces and moves, as well as predict chess moves from chess positions. We share preliminary results which anticipate our ongoing work on a neural network architecture that learns these embeddings directly from supervised feedback.
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Submitted 2 November, 2020;
originally announced November 2020.
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Ab-initio calculation of band alignments for opto-electronic simulations
Authors:
Jan Oliver Oelerich,
Maria J. Weseloh,
Kerstin Volz,
Stephan W. Koch
Abstract:
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with rec…
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A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.
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Submitted 3 January, 2019;
originally announced January 2019.
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Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces
Authors:
Kunie Ishioka,
Andreas Beyer,
Wolfgang Stolz,
Kerstin Volz,
Hrvoje Petek,
Ulrich Höfer,
Christopher J. Stanton
Abstract:
Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupl…
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Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing the GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic (LA) phonons in the form of a strain pulse. The strain induces not only a periodic modulation in the optical reflectivity as they propagate in the semiconductors, but also a sharp spike when it arrives at the GaP layer boundaries. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.
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Submitted 25 October, 2018;
originally announced October 2018.
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Valence band-anticrossing in GaP$_{1-x}$Bi$_{x}$ dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy
Authors:
Zoe L. Bushell,
Christopher A. Broderick,
Lukas Nattermann,
Rita M. Joseph,
Joseph L. Keddie,
Judy M. Rorison,
Kerstin Volz,
Stephen J. Sweeney
Abstract:
Using spectroscopic ellipsometry measurements on GaP$_{1-x}$Bi$_{x}$/GaP epitaxial layers up to $x = 3.7$% we observe a giant bowing of the direct band gap ($E_{g}^Γ$) and valence band spin-orbit splitting energy ($Δ_{\textrm{SO}}$). $E_{g}^Γ$ ($Δ_{\textrm{SO}}$) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than f…
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Using spectroscopic ellipsometry measurements on GaP$_{1-x}$Bi$_{x}$/GaP epitaxial layers up to $x = 3.7$% we observe a giant bowing of the direct band gap ($E_{g}^Γ$) and valence band spin-orbit splitting energy ($Δ_{\textrm{SO}}$). $E_{g}^Γ$ ($Δ_{\textrm{SO}}$) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in $Δ_{\textrm{SO}}$ in going from GaP to GaP$_{0.99}$Bi$_{0.01}$. The evolution of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ with $x$ is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ with $x$. In contrast to the well-studied GaAs$_{1-x}$Bi$_{x}$ alloy, in GaP$_{1-x}$Bi$_{x}$ substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ and in particular for the giant bowing observed for $x \lesssim 1$%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP$_{1-x}$Bi$_{x}$ alloy band structure.
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Submitted 24 October, 2017;
originally announced October 2017.
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Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Authors:
Phil Rosenow,
Lars C. Bannow,
Eric W. Fischer,
Wolfgang Stolz,
Kerstin Volz,
Stephan W. Koch,
Ralf Tonner
Abstract:
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calcul…
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While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calculations based on the meta-GGA functional presented by Tran and Blaha (TB09) with a supercell approach for the dilute nitride Ga(NAs). Exploring the requirements posed to supercells, we show that the distortion field of a single N atom must be allowed to decrease so far, that it does not overlap with its periodic images. This also prevents spurious electronic interactions between translational symmetric atoms, allowing to compute band gaps in very good agreement with experimentally derived reference values. These results open up the field of dilute nitride compound semiconductors to predictive ab initio calculations.
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Submitted 30 May, 2017;
originally announced May 2017.
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Sub-picosecond acoustic pulses at buried GaP/Si interfaces
Authors:
Kunie Ishioka,
Avinash Rustagi,
Andreas Beyer,
Wolfgang Stolz,
Kerstin Volz,
Ulrich Hoefer,
Hrvoje Petek,
Christopher J. Stanton
Abstract:
We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the re…
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We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the reflectivity spike, 0.5 ps, would translate to a spatial extent of 3 nm or 10 atomic bilayers, which is comparable with the width of the intermixing layer at the GaP/Si interface. The reflectivity signals are also modified by quasi-periodic Brillouin oscillations of GaP and Si arising from the acoustic pulses during the propagation in the crystals. The present results demonstrate the potential application of the simple optical pump-probe scheme in the nondestructive evaluation of the buried semiconductor interface quality.
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Submitted 27 July, 2017; v1 submitted 4 December, 2016;
originally announced December 2016.
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Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy
Authors:
Martin Schmid,
Kunie Ishioka,
Andreas Beyer,
Benedikt P. Klein,
Claudio K. Krug,
Malte Sachs,
Hrvoje Petek,
Christopher J. Stanton,
Wolfgang Stolz,
Kerstin Volz,
J. Michael Gottfried,
Ulrich Höfer
Abstract:
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical model…
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We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.
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Submitted 11 November, 2016;
originally announced November 2016.
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Second-harmonic generation as probe for structural and electronic properties of buried GaP/Si(001) interfaces
Authors:
K. Brixius,
A. Beyer,
J. Güdde,
M. Dürr,
W. Stolz,
K. Volz,
U. Höfer
Abstract:
Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response direct…
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Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response directly correlates with the quality of the interface as determined by atomically resolved scanning transmission electron microscopy.Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG from GaP/Si show a strong isotropic component of the response not present for pure Si(001) or GaP(001). The strength of the overlaying anisotropic response directly correlates with the quality of the interface as determined by atomically resolved scanning transmission electron microscopy. Systematic comparison of samples fabricated with different growth modes in metal organic vapor phase epitaxy reveals that the anisotropy for different polarization combinations can be used as a selective fingerprint for the occurrence of anti-phase domains and twins. This all-optical technique can be applied as an {\it in-situ} and non-invasive monitor even during growth. Systematic comparison of samples fabricated with different growth modes in metal organic vapor phase epitaxy reveals that the anisotropy for different polarization combinations can be used as a selective fingerprint for the occurrence of anti-phase domains and twins. This all-optical technique can be applied as an {\it in-situ} and non-invasive monitor even during growth.
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Submitted 31 October, 2018; v1 submitted 4 November, 2016;
originally announced November 2016.
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Hyperbolicity of arborescent tangles and arborescent links
Authors:
Kathleen Reif Volz
Abstract:
In this paper, we study the hyperbolicity of arborescent tangles and arborescent links. We will explicitly determine all essential surfaces in arborescent tangle complements with non-negative Euler characteristic, and show that given an arborescent tangle T, the complement X(T) is non-hyperbolic if and only if T is a rational tangle, T=Q_m * T' for some m greater than or equal to 1, or T contain…
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In this paper, we study the hyperbolicity of arborescent tangles and arborescent links. We will explicitly determine all essential surfaces in arborescent tangle complements with non-negative Euler characteristic, and show that given an arborescent tangle T, the complement X(T) is non-hyperbolic if and only if T is a rational tangle, T=Q_m * T' for some m greater than or equal to 1, or T contains Qn for some n greater than or equal to 2. We use these results to prove a theorem of Bonahon and Seibenmann which says that a large arborescent link L is non-hyperbolic if and only if it contains Q2.
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Submitted 1 December, 2008; v1 submitted 30 January, 2008;
originally announced January 2008.
