Spin-resolved electronic structure of ferroelectric α-GeTe and multiferroic Ge1-xMnxTe
Authors:
J. Krempasky,
M. Fanciulli,
J. Minár,
W. Khan,
M. Muntwiler,
F. Bertran,
S. Muff,
A. P. Weber,
V. N. Strocov,
V. V. Volobuiev,
G. Springholz,
J. H. Dil
Abstract:
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn do** of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the e…
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Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn do** of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the α-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields.
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Submitted 14 August, 2017;
originally announced August 2017.
Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors
Authors:
J. Krempaský,
S. Muff,
J. Minár,
N. Pilet,
M. Fanciulli,
A. P. Weber,
V. V. Volobuiev,
M. Gmitra,
C. A. F. Vaz,
V. Scagnoli,
G. Springholz,
J. H. Dil
Abstract:
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconducto…
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The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system.
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Submitted 26 July, 2017;
originally announced July 2017.
