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Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe$_2$/MoSe$_2$ heterobilayers
Authors:
Frank Volmer,
Manfred Ersfeld,
Paulo E. Faria Junior,
Lutz Waldecker,
Bharti Parashar,
Lars Rathmann,
Sudipta Dubey,
Iulia Cojocariu,
Vitaliy Feyer,
Kenji Watanabe,
Takashi Taniguchi,
Claus M. Schneider,
Lukasz Plucinski,
Christoph Stampfer,
Jaroslav Fabian,
Bernd Beschoten
Abstract:
We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For l…
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We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For large twist angles, we measure an increase in both the valley polarization and its respective lifetime by more than two orders of magnitude. Interestingly, in such heterobilayers we observe an interlayer transfer of valley polarization from the WSe$_2$ layer into the MoSe$_2$ layer. This mechanism enables the creation of a photo-induced valley polarization of free charge carriers in MoSe$_2$, which amplitude scales with the gate-induced charge carrier density. This is in contrast to monolayer MoSe$_2$, where such a gate-tunable valley polarization cannot be achieved. By combining time-resolved Kerr rotation, photoluminesence and angle-resolved photoemission spectroscopy measurements with first principles calculations, we show that these findings can be explained by twist angle dependent interlayer scattering mechanisms involving the Q- and $Γ$-valleys.
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Submitted 30 May, 2023; v1 submitted 30 November, 2022;
originally announced November 2022.
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Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
Authors:
E. Icking,
L. Banszerus,
F. Wörtche,
F. Volmer,
P. Schmidt,
C. Steiner,
S. Engels,
J. Hesselmann,
M. Goldsche,
K. Watanabe,
T. Taniguchi,
C. Volk,
B. Beschoten,
C. Stampfer
Abstract:
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first…
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The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first evidence of the tunable gap was already found ten years ago, it took until recent to fabricate sufficiently clean heterostructures where the electrically induced gap could be used to fully suppress transport or confine charge carriers. Here, we present a detailed study of the tunable band gap in gated bilayer graphene characterized by temperature-activated transport and finite-bias spectroscopy measurements. The latter method allows comparing different gate materials and device technologies, which directly affects the disorder potential in bilayer graphene. We show that graphite-gated bilayer graphene exhibits extremely low disorder and as good as no subgap states resulting in ultraclean tunable band gaps up to 120 meV. The size of the band gaps are in good agreement with theory and allow complete current suppression making a wide range of semiconductor applications possible.
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Submitted 7 July, 2022; v1 submitted 4 June, 2022;
originally announced June 2022.
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Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
Authors:
F. Volmer,
T. Bisswanger,
A. Schmidt,
C. Stampfer,
B. Beschoten
Abstract:
To conduct spin-sensitive transport measurements, a non-local device geometry is often used to avoid spurious voltages that are caused by the flow of charges. However, in the vast majority of reported non-local spin valve, Hanle spin precession, or spin Hall measurements background signals have been observed that are not related to spins. We discuss seven different types of these charge-induced si…
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To conduct spin-sensitive transport measurements, a non-local device geometry is often used to avoid spurious voltages that are caused by the flow of charges. However, in the vast majority of reported non-local spin valve, Hanle spin precession, or spin Hall measurements background signals have been observed that are not related to spins. We discuss seven different types of these charge-induced signals and explain how these artifacts can result in erroneous or misleading conclusions when falsely attributed to spin transport. The charge-driven signals can be divided into two groups: Signals that are inherent to the device structure and/or the measurement setup and signals that depend on a common-mode voltage. We designed and built a voltage-controlled current source that significantly diminishes all spurious voltage signals of the latter group in both DC and AC measurements by creating a virtual ground within the non-local detection circuit. This is especially important for lock-in-based measurement techniques, where a common-mode voltage can create a phase-shifted, frequency-dependent signal with an amplitude several orders of magnitude larger than the actual spin signal. Measurements performed on graphene-based non-local spin valve devices demonstrate how all spurious voltage signals that are caused by a common-mode voltage can be completely suppressed by such a current source.
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Submitted 16 May, 2022; v1 submitted 3 December, 2021;
originally announced December 2021.
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CVD bilayer graphene spin valves with 26 $μ$m spin diffusion length at room temperature
Authors:
T. Bisswanger,
Z. Winter,
A. Schmidt,
F. Volmer,
K. Watanabe,
T. Taniguchi,
C. Stampfer,
B. Beschoten
Abstract:
We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show…
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We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $μ$m at room temperature combined with a charge carrier mobility of $\approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene.
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Submitted 17 March, 2022; v1 submitted 13 May, 2021;
originally announced May 2021.
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How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
Authors:
Frank Volmer,
Inga Seidler,
Timo Bisswanger,
Jhih-Sian Tu,
Lars R. Schreiber,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in mo…
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We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms towards the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro- and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.
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Submitted 15 February, 2021; v1 submitted 13 October, 2020;
originally announced October 2020.
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Valley lifetimes of conduction band electrons in monolayer WSe$_2$
Authors:
Manfred Ersfeld,
Frank Volmer,
Lars Rathmann,
Luca Kotewitz,
Maximilian Heithoff,
Mark Lohmann,
Bowen Yang,
Kenji Watanabe,
Takashi Taniguchi,
Ludwig Bartels,
**g Shi,
Christoph Stampfer,
Bernd Beschoten
Abstract:
One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dependent valley lifetimes of free conduction band electrons of monolayer WSe$_2$. When tuning the Fermi energy into the conduction band we observe a str…
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One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dependent valley lifetimes of free conduction band electrons of monolayer WSe$_2$. When tuning the Fermi energy into the conduction band we observe a strong decrease of the respective valley lifetimes which is consistent with both spin-orbit and electron-phonon scattering. We explain the formation of a valley polarization by the scattering of optically excited valley polarized bright trions into dark states by intervalley scattering. Furthermore, we show that the conventional time-resolved Kerr rotation measurement scheme has to be modified to account for photo-induced gate screening effects. Disregarding this adaptation can lead to erroneous conclusions drawn from gate-dependent optical measurements and can completely mask the true gate-dependent valley dynamics.
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Submitted 29 July, 2020;
originally announced July 2020.
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How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials
Authors:
F. Volmer,
M. Ersfeld,
L. Rathmann,
M. Heithoff,
L. Kotewitz,
K. Watanabe,
T. Taniguchi,
C. Stampfer,
B. Beschoten
Abstract:
An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally done by changing the charge carrier density of the 2D material via the gate electric field effect. Here, we show that a comparison of gate-dependent measurements…
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An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally done by changing the charge carrier density of the 2D material via the gate electric field effect. Here, we show that a comparison of gate-dependent measurements, which were acquired under different measurement conditions can encounter significant problems due to the temporal evolution of the charging of trap states inside the dielectric layer or at its interfaces. The impact of, e.g., the gate sweep direction and the sweep rate on the overall gate dependence gets especially prominent in optical measurements due to photo-excitation of donor and acceptor states. Under such conditions the same nominal gate-voltage may lead to different gate-induced charge carrier densities and, hence, Fermi level positions. We demonstrate that a current flow from or even through the dielectric layer via leakage currents can significantly diminish the gate tunability in optical measurements of 2D materials.
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Submitted 8 June, 2020;
originally announced June 2020.
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Unveiling valley lifetimes of free charge carriers in monolayer WSe$_2$
Authors:
Manfred Ersfeld,
Frank Volmer,
Lars Rathmann,
Luca Kotewitz,
Maximilian Heithoff,
Mark Lohmann,
Bowen Yang,
Kenji Watanabe,
Takashi Taniguchi,
Ludwig Bartels,
**g Shi,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe$_2$, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent w…
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We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe$_2$, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi level-dependent scattering channels of optically excited, valley polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition metal dichalcogenide WSe$_2$ can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (> 10 ns).
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Submitted 6 February, 2020; v1 submitted 26 November, 2019;
originally announced November 2019.
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Non-local electrical detection of spin-momentum-locked surface currents in the 3D topological insulator BiSbTeSe$_{2}$
Authors:
Shaham Jafarpisheh,
Frank Volmer,
Zhiwei Wang,
Bárbara Canto,
Yoichi Ando,
Christoph Stampfer,
Bernd Beschoten
Abstract:
The spin-polarized surface states in topological insulators offer unique transport characteristics which make them distinguishable from trivial conductors. Due to the topological protection, these states are gapless over the whole surface of the material. Here, we detect the surface states in the topological insulator BiSbTeSe$_{2}$ by electrical means using a non-local transport configuration. We…
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The spin-polarized surface states in topological insulators offer unique transport characteristics which make them distinguishable from trivial conductors. Due to the topological protection, these states are gapless over the whole surface of the material. Here, we detect the surface states in the topological insulator BiSbTeSe$_{2}$ by electrical means using a non-local transport configuration. We unambiguously probe the spin-momentum locking of the topologically protected surface states by spin-sensitive electrical read-out using ferromagnetic Co/Al$_2$O$_3$ electrodes. We show that the non-local measurement allows to probe the surface currents flowing along the whole surface, i.e. from the top along the side to the bottom surface and back to the top surface along the opposite side. This is in contrast to local transport configurations where only the surface states of the one face being in contact to the electrodes can be measured. Our results furthermore exclude the contribution of the bulk to the non-local transport at low temperatures. Increasing the temperature, on the other hand, increases the interaction between bulk and surface states, which shortens the non-local current path along the surface and hence leads to a complete disappearance of the non-local signal at around 20 K. All this demonstrates that the non-local signal at low temperatures is solely due to the topologically protected surface states.
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Submitted 24 July, 2019;
originally announced July 2019.
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Dry-transferred CVD graphene for inverted spin valve devices
Authors:
Marc Drögeler,
Luca Banszerus,
Frank Volmer,
Takashi Taniguchi,
Kenji Watanabe,
Bernd Beschoten,
Christoph Stampfer
Abstract:
Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process…
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Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process where the CVD-graphene/hBN stack is first patterned into a bar and then transferred by a second larger hBN crystal onto spin valve electrodes and (ii) a direct transfer of a CVD-graphene/hBN stack. We report record high spin lifetimes in CVD graphene of up to 1.75 ns at room temperature. Overall, the performances of our devices are comparable to devices fabricated from exfoliated graphene also revealing nanosecond spin lifetimes. We expect that our dry transfer methods pave the way towards more advanced device geometries not only for spintronic applications but also for CVD-graphene-based nanoelectronic devices in general where patterning of the CVD graphene is required prior to the assembly of final van der Waals heterostructures.
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Submitted 5 September, 2017;
originally announced September 2017.
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Spin States Protected from Intrinsic Electron-Phonon-Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe$_2$
Authors:
Manfred Ersfeld,
Frank Volmer,
Pedro Miguel M. C. de Melo,
Robin de Winter,
Maximilian Heithoff,
Zeila Zanolli,
Christoph Stampfer,
Matthieu J. Verstraete,
Bernd Beschoten
Abstract:
We present time-resolved Kerr rotation measurements, showing spin lifetimes of over 100 ns at room temperature in monolayer MoSe$_2$. These long lifetimes are accompanied by an intriguing temperature dependence of the Kerr amplitude, which increases with temperature up to 50 K and then abruptly switches sign. Using ab initio simulations we explain the latter behavior in terms of the intrinsic elec…
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We present time-resolved Kerr rotation measurements, showing spin lifetimes of over 100 ns at room temperature in monolayer MoSe$_2$. These long lifetimes are accompanied by an intriguing temperature dependence of the Kerr amplitude, which increases with temperature up to 50 K and then abruptly switches sign. Using ab initio simulations we explain the latter behavior in terms of the intrinsic electron-phonon coupling and the activation of transitions to secondary valleys. The phonon-assisted scattering of the photo-excited electron-hole pairs prepares a valley spin polarization within the first few ps after laser excitation. The sign of the total valley magnetization, and thus the Kerr amplitude, switches as a function of temperature, as conduction and valence band states exhibit different phonon-mediated inter-valley scattering rates. However, the electron-phonon scattering on the ps time scale does not provide an explanation for the long spin lifetimes. Hence, we deduce that the initial spin polarization must be transferred into spin states which are protected from the intrinsic electron-phonon coupling, and are most likely resident charge carriers which are not part of the itinerant valence or conduction band states.
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Submitted 8 April, 2019; v1 submitted 1 August, 2017;
originally announced August 2017.
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Simulations on the influence of spatially-varying spin transport parameters on the measured spin lifetime in graphene non-local spin valves
Authors:
Marc Drögeler,
Frank Volmer,
Christoph Stampfer,
Bernd Beschoten
Abstract:
Spin transport properties of graphene non-local spin valve devices are typically determined from Hanle spin precession measurements by using a simplified solution of the one-dimensional Bloch-Torrey equation which assumes infinitely long transport channels and uniform spin transport parameter. We investigate the effects of a finite graphene size and explore the influence of spatially-varying trans…
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Spin transport properties of graphene non-local spin valve devices are typically determined from Hanle spin precession measurements by using a simplified solution of the one-dimensional Bloch-Torrey equation which assumes infinitely long transport channels and uniform spin transport parameter. We investigate the effects of a finite graphene size and explore the influence of spatially-varying transport parameters on the measured Hanle curves by finite element simulations. We assume enhanced spin dephasing in the contact-covered graphene areas with additional Fermi level pinning and explore the influence of non-magnetic reference electrodes which are not properly decoupled from graphene. In experiments, it is typically observed that the spin lifetime increases with increasing charge carrier density. None of our simulations can reproduce this trend indicating that this dependency originates from spin transport through graphene areas which are not covered by contacts. We find that the extracted spin lifetime might be overestimated in flakes which are shorter than the spin diffusion length. Moreover, contact-induced spin dephasing leads to an overall reduction of the extracted spin lifetime. Additionally, we show that non-magnetic reference electrodes may also influence the measured spin lifetime even though they are not part of the transport area under investigation.
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Submitted 8 May, 2018; v1 submitted 29 June, 2017;
originally announced June 2017.
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Inter-valley dark trion states with spin lifetimes of 150 ns in WSe$_2$
Authors:
F. Volmer,
S. Pissinger,
M. Ersfeld,
S. Kuhlen,
C. Stampfer,
B. Beschoten
Abstract:
We demonstrate long trion spin lifetimes in a WSe$_2$ monolayer of up to 150 ns at 5 K. Applying a transverse magnetic field in time-resolved Kerr-rotation measurements reveals a complex composition of the spin signal of up to four distinct components. The Kerr rotation signal can be well described by a model which includes inhomogeneous spin dephasing and by setting the trion spin lifetimes to th…
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We demonstrate long trion spin lifetimes in a WSe$_2$ monolayer of up to 150 ns at 5 K. Applying a transverse magnetic field in time-resolved Kerr-rotation measurements reveals a complex composition of the spin signal of up to four distinct components. The Kerr rotation signal can be well described by a model which includes inhomogeneous spin dephasing and by setting the trion spin lifetimes to the measured excitonic recombination times extracted from time-resolved reflectivity measurements. We observe a continuous shift of the Kerr resonance with the probe energy, which can be explained by an adsorbate-induced, inhomogeneous potential landscape of the WSe$_2$ flake. A further indication of extrinsic effects on the spin dynamics is given by a change of both the trion spin lifetime and the distribution of g-factors over time. Finally, we detect a Kerr rotation signal from the trion's higher-energy triplet state when the lower-energy singlet state is optically pumped by circularly polarized light. We explain this by the formation of dark trion states, which are also responsible for the observed long trion spin lifetimes.
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Submitted 13 February, 2017;
originally announced February 2017.
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Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
Authors:
Marc Drögeler,
Christopher Franzen,
Frank Volmer,
Tobias Pohlmann,
Luca Banszerus,
Maik Wolter,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$ substrate and the subsequent dry transfer of a graphene-hBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingr…
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We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$ substrate and the subsequent dry transfer of a graphene-hBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. Interestingly, long spin lifetimes are observed despite the fact that both conductive scanning force microscopy and contact resistance measurements reveal the existence of conducting pinholes throughout the MgO spin injection/detection barriers. The observed enhancement of the spin lifetime in single layer graphene by a factor of 6 compared to previous devices exceeds current models of contact-induced spin relaxation which paves the way towards probing intrinsic spin properties of graphene.
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Submitted 8 February, 2016;
originally announced February 2016.
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Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al$_2$O$_3$ spin injection and detection barriers
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Kenji Watanabe,
Takashi Taniguchi,
Daniel Neumaier,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at ro…
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We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at room temperature combined with carrier mobilities which exceed 20,000 cm$^2$/(Vs). Despite strongly enhanced spin and charge transport properties, the MgO injection barriers in these devices exhibit conducting pinholes which still limit the measured spin lifetimes. We demonstrate that these pinholes can be partially diminished by an oxygen treatment of a trilayer graphene device which is seen by a strong increase of the contact resistance area products of the Co/MgO electrodes. At the same time, the spin lifetime increases from 1 ns to 2 ns. We believe that the pinholes partially result from the directional growth in molecular beam epitaxy. For a second set of devices, we therefore used atomic layer deposition of Al$_2$O$_3$ which offers the possibility to isotropically deposit more homogeneous barriers. While the contacts of the as-fabricated bilayer graphene devices are non-conductive, we can partially break the oxide barriers by voltage pulses. Thereafter, the devices also exhibit nanosecond spin lifetimes.
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Submitted 9 July, 2015;
originally announced July 2015.
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Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
Authors:
F. Volmer,
M. Drögeler,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly depos…
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In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.
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Submitted 24 June, 2015; v1 submitted 5 March, 2015;
originally announced March 2015.
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Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
Authors:
F. Volmer,
M. Drögeler,
T. Pohlmann,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection…
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Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection and detection contacts in a fabricated device. To address this issue, we discuss the influence of spatially inhomogeneous oxide barriers and especially conducting pinholes within the barrier on the background signal in non-local measurements of graphene/MgO/Co spin-valve devices. By both simulations and reference measurements on devices with non-ferromagnetic electrodes, we demonstrate that the background signal can be caused by inhomogeneous current flow through the oxide barriers. As a main result, we demonstrate the existence of charge accumulation next to the actual spin accumulation signal in non-local voltage measurements, which can be explained by a redistribution of charge carriers by a perpendicular magnetic field similar to the classical Hall effect. Furthermore, we present systematic studies on the phase of the low frequency non-local ac voltage signal which is measured in non-local spin measurements when applying ac lock-in techniques. This phase has so far widely been neglected in the analysis of non-local spin transport. We demonstrate that this phase is another hallmark of the homogeneity of the MgO spin injection and detection barriers. We link backgate dependent changes of the phase to the interplay between the capacitance of the oxide barrier to the quantum capacitance of graphene.
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Submitted 19 December, 2014;
originally announced December 2014.
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Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
Authors:
F. Volmer,
M. Drögeler,
E. Maynicke,
N. von den Driesch,
M. L. Boschen,
G. Güntherodt,
C. Stampfer,
B. Beschoten
Abstract:
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can…
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By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.
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Submitted 6 August, 2014;
originally announced August 2014.
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Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Gernot Güntherodt,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that roo…
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We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.
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Submitted 10 June, 2014;
originally announced June 2014.
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Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices
Authors:
F. Volmer,
M. Drögeler,
E. Maynicke,
N. von den Driesch,
M. L. Boschen,
G. Güntherodt,
B. Beschoten
Abstract:
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single layer devices. This general trend is only observed in devices with large contact resistances. Furthermore, we observe a second Dirac peak in devices wit…
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We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single layer devices. This general trend is only observed in devices with large contact resistances. Furthermore, we observe a second Dirac peak in devices with long spin lifetimes. This results from charge transport underneath the contacts. In contrast, all devices with low ohmic contact resistances only exhibit a single Dirac peak. Additionally, the spin lifetime is significantly reduced indicating that an additional spin dephasing occurs underneath the electrodes.
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Submitted 25 September, 2013; v1 submitted 28 May, 2013;
originally announced May 2013.
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Towards wafer scale fabrication of graphene based spin valve devices
Authors:
Ahmet Avsar,
Tsung-Yeh Yang,
Su-Kang Bae,
Jayakumar Balakrishnan,
Frank Volmer,
Manu Jaiswal,
Zheng Yi,
Syed Rizwan Ali,
Gernot Güntherodt,
Byung-Hee Hong,
Bernd Beschoten,
Barbaros Özyilmaz
Abstract:
We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain bou…
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We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain boundaries do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.
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Submitted 25 April, 2011;
originally announced April 2011.
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Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
Authors:
T. -Y. Yang,
J. Balakrishnan,
F. Volmer,
A. Avsar,
M. Jaiswal,
J. Samm,
S. R. Ali,
A. Pachoud,
M. Zeng,
M. Popinciuc,
G. Güntherodt,
B. Beschoten,
B. Özyilmaz
Abstract:
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of…
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We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $τ_s$ are observed as a function of temperature.
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Submitted 20 June, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
