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All-optical blast wave control of laser wakefield acceleration in near critical plasma
Authors:
I. Tsymbalov,
D. Gorlova,
K. Ivanov,
E. Starodubtseva,
R. Volkov,
I. Tsygvintsev,
Yu. Kochetkov,
Ph. Korneev,
A. Polonski,
A. Savelev
Abstract:
We propose a novel method for changing the length of laser wakefield electron acceleration in a gas jet by a cylindrical blast wave created by a perpendicularly focused nanosecond laser pulse. The shock front destroys the wake thus stop** interaction between the laser pulse and accelerated electron bunch allowing one to directly control the interaction length and avoid dephasing. It also improve…
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We propose a novel method for changing the length of laser wakefield electron acceleration in a gas jet by a cylindrical blast wave created by a perpendicularly focused nanosecond laser pulse. The shock front destroys the wake thus stop** interaction between the laser pulse and accelerated electron bunch allowing one to directly control the interaction length and avoid dephasing. It also improves the electron beam quality through the plasma lensing effect between the two shock fronts. We demonstrated both experimentally and numerically how this approach can be used to form quasi-monoenergetic electron bunch with controlled energy and improved divergence as well as to track changes in the bunch parameters during acceleration.
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Submitted 28 March, 2024;
originally announced March 2024.
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Laser-driven pointed acceleration of electrons with preformed plasma lens
Authors:
K. Ivanov,
D. Gorlova,
I. Tsymbalov,
I. Tsygvintsev,
S. Shulyapov,
R. Volkov,
A. Savelev
Abstract:
The simultaneous laser-driven acceleration and angular manipulation of the fast electron beam is experimentally demonstrated. The bunch of multi-MeV energy charged particles is generated during the propagation of the femtosecond laser pulse through the near-critical plasma slab accompanied by plasma channeling. Plasma is formed by the controlled breakdown of a thin-tape target by a powerful nanose…
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The simultaneous laser-driven acceleration and angular manipulation of the fast electron beam is experimentally demonstrated. The bunch of multi-MeV energy charged particles is generated during the propagation of the femtosecond laser pulse through the near-critical plasma slab accompanied by plasma channeling. Plasma is formed by the controlled breakdown of a thin-tape target by a powerful nanosecond prepulse. The electron beam pointing approach is based on the refraction of a laser pulse in the presence of a strong radial density gradient in the breakdown of the tape with a small displacement of the femtosecond laser beam relative to the breakdown symmetry axis. A shift of several micrometers makes it possible to achieve beam deflection by an angle up to 10 degrees with acceptable beam charge and spectrum conservation. This opens up opportunities for in-situ applications for scanning objects with an electron beam and the multistage electron beam energy gain in consecutive laser accelerators without bulk magnetic optics for particles. Experimental findings are supported by numerical Particle-In-Cell calculations of laser-plasma acceleration and hydrodynamic simulations.
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Submitted 18 October, 2023; v1 submitted 19 September, 2023;
originally announced September 2023.
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Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
Authors:
K. Ben Saddik,
S. Fernandez-Garrido,
R. Volkov,
J. Grandal,
N. Borgardt,
B. J. Garcia
Abstract:
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different gro…
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We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up to x = 0.04, it is possible to synthesize smooth and chemically homogeneous GaP1-xNx layers with a high-structural quality in a 2D fashion, namely, layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is favored by lowering the growth temperature while decreasing the N precursor flux. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to Si (x = 0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition.
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Submitted 2 February, 2023;
originally announced February 2023.
