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Low-temperature thermal conductivity of Co$_{1-x}$M$_x$Si (M=Fe, Ni) alloys
Authors:
Yu. V. Ivanov,
A. A. Levin,
S. V. Novikov,
D. A. Pshenay-Severin,
M. P. Volkov,
A. Yu. Zyuzin,
A. T. Burkov,
T. Nakama,
L. U. Schnatmann,
H. Reith,
K. Nielsch
Abstract:
We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivi…
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We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivity would decrease in the alloys. However, our experimental results revealed that at temperatures below 20K the thermal conductivity of Fe- and Ni-containing alloys is several times larger than that of pure CoSi. We discuss possible mechanisms of the thermal conductivity enhancement. The most probable one is related to the dominant scattering of phonons by charge carriers. We propose a simple theoretical model that takes into account the complex semimetallic electronic structure of CoSi with nonequivalent valleys, and show that it explains well the increase of the lattice thermal conductivity with increasing disorder and the linear temperature dependence of the thermal conductivity in the Co$_{1-x}$Fe$_x$Si alloys below 20K.
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Submitted 19 October, 2020; v1 submitted 1 October, 2020;
originally announced October 2020.
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Substrate induced magnetic anisotropies and magneto-optical response in YIG nanosized epitaxial films on NdGG(111)
Authors:
B. B. Krichevtsov,
V. E. Bursian,
S. V. Gastev,
A. M. Korovin,
L. V. Lutsev,
S. M. Suturin,
K. V. Mashkov,
M. P. Volkov,
N. S. Sokolov
Abstract:
Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the stress-related anisotropy field has an opposite sign, compared to that in the YIG/GGG systems. This leads to a considerable decrease of the effective magnetization that o…
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Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the stress-related anisotropy field has an opposite sign, compared to that in the YIG/GGG systems. This leads to a considerable decrease of the effective magnetization that opens a perspective to get YIG films with perpendicular magnetization for utilizing forward volume spin waves. Longitudinal magnetooptical Kerr effect magnetometry reveals a large contribution of quadratic in magnetization terms into dielectric permittivity tensor at optical frequencies. This effect strongly increases with temperature decrease and is explained by magnetization of the interface Nd3+ ions that are exchange coupled to the Fe3+ ions.
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Submitted 12 December, 2018;
originally announced January 2019.
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Lattice and spin dynamics in a low-symmetry antiferromagnet NiWO$_4$
Authors:
M. A. Prosnikov,
V. Yu. Davydov,
A. N. Smirnov,
M. P. Volkov,
R. V. Pisarev,
P. Becker,
L. Bohatý
Abstract:
Lattice and magnetic dynamics of NiWO$_4$ single crystals were studied with the use of polarized Raman spectroscopy in a wide temperature range of 10-300 K including the antiferromagnetic ordering temperature $T_N$=62 K. Static magnetic measurements were used for characterizing the single crystals. All Raman-active phonons predicted by the group theory were observed and characterized. Magnetic sym…
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Lattice and magnetic dynamics of NiWO$_4$ single crystals were studied with the use of polarized Raman spectroscopy in a wide temperature range of 10-300 K including the antiferromagnetic ordering temperature $T_N$=62 K. Static magnetic measurements were used for characterizing the single crystals. All Raman-active phonons predicted by the group theory were observed and characterized. Magnetic symmetry analysis was used to determine possible magnetic space groups for NiWO$_4$ which can be also applied to any other isostructural crystal with the same magnetic propagation vector k=(1/2,0,0). Though the magnetic structure of NiWO$_4$ is relatively simple, a rich set of narrow and broad magnetic excitations with different polarization properties and temperature behavior in the very broad frequency range of 10-200 cm$^{-1}$ was observed, with some modes surviving at temperatures much higher than $T_N$ up to 220 K. Part of the magnetic excitations was identified as acoustic and optical spin-wave branches which allow us to construct exchange structure and estimate exchange and anisotropy constants with the use of linear spin-wave theory. Since the magnetic structure can be described as exchange-coupled AFM chains of $S=1$ ions, previously unobserved magnetic excitation at 24 cm$^{-1}$ is tentatively assigned to a Haldane gap mode.
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Submitted 31 May, 2017;
originally announced May 2017.
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Quantum oscillations of magnetoresistance of the submicrometer thick bismuth telluride-based films
Authors:
L. N. Lukyanova,
Yu. A. Boikov,
V. A. Danilov,
O. A. Usov,
M. P. Volkov,
V. A. Kutasov
Abstract:
Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the magnetoresistance were found at the temperatures below 10 K in the magnetic field from 6 to 14 T. From analysis of magnetoresistance oscillations the main surface stat…
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Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the magnetoresistance were found at the temperatures below 10 K in the magnetic field from 6 to 14 T. From analysis of magnetoresistance oscillations the main surface state parameters of the films were determined. Expementally obtained Landau level index shift and its temperature dependence are consistent with Berry phase specific for topological Dirac surface states. The estimated parameters of electronic topological surface states of the bismuth telluride-based films are of special interest because of possible usage of them in micro generators and micro coolers, and also for other device applications.
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Submitted 30 November, 2014;
originally announced December 2014.
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Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films
Authors:
L. N. Lukyanova,
Yu. A. Boikov,
V A Danilov,
O A Usov,
M P Volkov,
V. A. Kutasov
Abstract:
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was normal to the substrate plane. Seebeck coefficient, electrical conductivity and magnetoresistivity tensor components were measured at various orientations of magneti…
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Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was normal to the substrate plane. Seebeck coefficient, electrical conductivity and magnetoresistivity tensor components were measured at various orientations of magnetic and electric fields in the temperature interval 77-300 K and magnetic field up to 14 T. Scattering mechanism of charge carriers in the films were studied using temperature dependences of the degeneracy parameter and the Seebeck coefficient in terms of a many-valley model of energy spectrum. Obtained results have shown that the effective scattering parameter is considerably differed from the value specific for an acoustic scattering of charge carriers in the weakly degenerate films due to an additional scattering of charge carriers on interface and interctystallite boundaries. These features of charge carrier scattering are supposed to affect electronic transport in the films and enhance figure of merit.
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Submitted 12 July, 2014;
originally announced July 2014.
