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Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors
Authors:
J. Krempasky,
S. Muff,
F. Bisti,
M. Fanciulli,
H. Volfová,
A. Weber,
N. Pilet,
P. Warnicke,
H. Ebert,
J. Braun,
F. Bertran,
V. V. Volobuev,
J. Minár,
G. Springholz,
J. H. Dil,
V. N. Strocov
Abstract:
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Her…
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The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Here we show that multiferroic (GeMn)Te inherits from its parent ferroelectric α-GeTe compound a giant Rashba splitting of three-dimensional bulk states which competes with the Zeeman spin splitting induced by the magnetic exchange interactions. The collinear alignment of ferroelectric and ferromagnetic polarization leads to an opening of a tunable Zeeman gap of up to 100 meV around the Dirac point of the Rashba bands, coupled with a change in spin texture by entanglement of magnetic and spin-orbit order. Through applications of magnetic fields, we demonstrate manipulation of spin- texture by spin resolved photoemission experiments, which is also expected for electric fields based on the multiferroic coupling. The control of spin helicity of the bands and its locking to ferromagnetic and ferroelectric order opens fascinating new avenues for highly multifunctional multiferroic Rashba devices suited for reprogrammable logic and/or nonvolatile memory applications.
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Submitted 5 June, 2016; v1 submitted 1 June, 2016;
originally announced June 2016.
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Spin polarization and attosecond time delay in photoemission from spin degenerate states of solids
Authors:
Mauro Fanciulli,
Henrieta Volfová,
Stefan Muff,
Jürgen Braun,
Hubert Ebert,
Jan Minár,
Ulrich Heinzmann,
J. Hugo Dil
Abstract:
After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecondresolved photoemission experiments. According to the Eisenbud-Wigner-Smith model, the time delay is due to a phase shift of different transitions that occur in the process. Such a phase shift is also at th…
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After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecondresolved photoemission experiments. According to the Eisenbud-Wigner-Smith model, the time delay is due to a phase shift of different transitions that occur in the process. Such a phase shift is also at the origin of the angular dependent spin polarization of the photoelectron beam, observable in spin degenerate systems without angular momentum transfer by the incident photon. We propose a semi-quantitative model which permits to relate spin and time scales in photoemission from condensed matter targets and to better understand spin- and angle-resolved photoemission spectroscopy (SARPES) experiments on spin degenerate systems. We also present the first experimental determination by SARPES of this time delay in a dispersive band, which is found to be greater than 26 as for electrons emitted from the sp-bulk band of the model system Cu(111).
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Submitted 29 September, 2016; v1 submitted 27 January, 2016;
originally announced January 2016.
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Spin Map** of Surface and Bulk Rashba States in Ferroelectric a-GeTe(111) Films
Authors:
H. J. Elmers,
R. Wallauer,
M. Liebmann,
J. Kellner,
M. Morgenstern,
R. N. Wang,
J. E. Boschker,
R. Calarco,
O. Rader,
D. Kutnyakhov,
S. V. Chernov,
K. Medjanik,
C. Tusche,
M. Ellguth,
H. Volfova,
J. Braun,
J. Minar,
H. Ebert,
G. Schonhense
Abstract:
A comprehensive map** of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10.000 data points (voxels). A Rashba type splitting of both surface and bulk bands with opposite spin helicity of the inner and outer Rashb…
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A comprehensive map** of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10.000 data points (voxels). A Rashba type splitting of both surface and bulk bands with opposite spin helicity of the inner and outer Rashba bands is found revealing a complex spin texture at the Fermi energy. The switchable inner electric field of GeTe implies new functionalities for spintronic devices.
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Submitted 4 December, 2015;
originally announced December 2015.
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Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance
Authors:
L. L. Lev,
J. Krempaský,
U. Staub,
V. A. Rogalev,
T. Schmitt,
M. Shi,
P. Blaha,
A. S. Mishchenko,
A. A. Veligzhanin,
Y. V. Zubavichus,
M. B. Tsetlin,
H. Volfová,
J. Braun,
J. Minár,
V. N. Strocov
Abstract:
Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unv…
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Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unveils the canonical topology of alternating three-dimensional electron spheres and hole cubes, with their shadow contours manifesting the rhombohedral lattice distortion. This picture has been confirmed by one-step photoemission calculations including displacement of the apical oxygen atoms. The rhombohedral distortion is neutral to the Jahn-Teller effect and thus polaronic coupling, but affects the double-exchange electron hop** and thus the colossal magnetoresistance effect.
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Submitted 1 June, 2015;
originally announced June 2015.
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Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric α-GeTe(111) semiconductor
Authors:
J. Krempaský,
H. Volfová,
S. Muff,
N. Pilet,
G. Landolt,
M. Radović,
M. Shi,
D. Kriegner,
V. Holý,
J. Braun,
H. Ebert,
F. Bisti,
V. A. Rogalev,
V. N. Strocov,
G. Springholz,
J. Minár,
J. H. Dil
Abstract:
In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large…
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In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.
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Submitted 17 March, 2015;
originally announced March 2015.
