Showing 1–17 of 17 results for author: Volckaert, K

External screening and lifetime of exciton population in single-layer ReSe$_2$ probed by time- and angle-resolved photoemission spectroscopy

Authors: Klara Volckaert, Byoung Ki Choi, Hyuk ** Kim, Deepnarayan Biswas, Denny Puntel, Simone Peli, Fulvio Parmigiani, Federico Cilento, Young Jun Chang, Søren Ulstrup

Abstract: The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilay… ▽ More The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilayer graphene substrate and monitor the temporal evolution of the excited state signal using time- and angle-resolved photoemission spectroscopy. We measure an optical gap of $(1.53 \pm 0.02)$ eV, consistent with resonant excitation of the lowest exciton state. The exciton distribution is tunable via the linear polarization of the pump pulse and exhibits a biexponential decay with time constants given by $τ_1 = (110 \pm 10)$ fs and $τ_2 = (650 \pm 70)$ fs, facilitated by recombination via an in-gap state that is pinned at the Fermi level. By extracting the momentum-resolved exciton distribution we estimate its real-space radial extent to be greater than 17.1 Å, implying significant exciton delocalization due to screening from the bilayer graphene substrate. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, L041001 (2023)

Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures

Authors: Paulina Majchrzak, Klara Volckaert, Deepnarayan Biswas, Denny Puntel, Wibke Bronsch, Federico Cilento, Xing-Chen Pan, Yong P. Chen, Søren Ulstrup

Abstract: Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following… ▽ More Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy. We gain access to the out-of-equilibrium surface electronic structure of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states that are resonant with the optical excitation in the Bi$_2$Te$_3$ layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by in-plane phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The competition of interlayer charge transfer and intralayer phonon scattering establishes MnBi$_2$Te$_4$-based compounds as a platform for controlling ultrafast charge transfer processes in combination with magnetism and topology in van der Waals heterostructures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

Comments: 17 pages, 4 figures

Journal ref: A substantially revised version is published in Nano Letters (2023)

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Authors: Xiaochun Huang, Rui Xiong, Klara Volckaert, Chunxue Hao, Deepnarayan Biswas, Marco Bianchi, Philip Hofmann, Philip Beck, Jonas Warmuth, Baisheng Sa, Jens Wiebe, Roland Wiesendanger

Abstract: Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth… ▽ More Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Tracking the surface atomic motion in a coherent phonon oscillation

Authors: Davide Curcio, Klara Volckaert, Dmytro Kutnyakhov, Steinn Ymir Agustsson, Kevin Bühlmann, Federico Pressacco, Michael Heber, Siarhei Dziarzhytski, Yves Acremann, Jure Demsar, Wilfried Wurth, Charlotte E. Sanders, Philip Hofmann

Abstract: X-ray photoelectron diffraction is a powerful tool for determining the structure of clean and adsorbate-covered surfaces. Extending the technique into the ultrafast time domain will open the door to studies as diverse as the direct determination of the electron-phonon coupling strength in solids and the map** of atomic motion in surface chemical reactions. Here we demonstrate time-resolved photo… ▽ More X-ray photoelectron diffraction is a powerful tool for determining the structure of clean and adsorbate-covered surfaces. Extending the technique into the ultrafast time domain will open the door to studies as diverse as the direct determination of the electron-phonon coupling strength in solids and the map** of atomic motion in surface chemical reactions. Here we demonstrate time-resolved photoelectron diffraction using ultrashort soft X-ray pulses from the free electron laser FLASH. We collect Se 3d photoelectron diffraction patterns over a wide angular range from optically excited Bi$_2$Se$_3$ with a time resolution of 140 fs. Combining these with multiple scattering simulations allows us to track the motion of near-surface atoms within the first 3 ps after triggering a coherent vibration of the A$_{1g}$ optical phonons. Using a fluence of 4.2 mJ/cm$^2$ from a 1.55 eV pump laser, we find the resulting coherent vibrational amplitude in the first two interlayer spacings to be on the order of 1 pm. △ Less

Submitted 26 May, 2022; originally announced May 2022.

Ultrafast X-ray imaging of the light-induced phase transition in VO2

Authors: Allan S. Johnson, Daniel Pérez-Salinas, Khalid M. Siddiqui, Sungwon Kim, Sungwook Choi, Klara Volckaert, Paulina E. Majchrzak, Søren Ulstrup, Naman Agarwal, Kent Hallman, Richard F. Haglund Jr., Christian M. Günther, Bastian Pfau, Stefan Eisebitt, Dirk Backes, Francesco Maccherozzi, Ann Fitzpatrick, Sarnjeet Dhesi, Pierluigi Gargiani, Manuel Valvidares, Nongnuch Artrith, Frank de Groot, Hyeongi Choi, Dogeun Jang, Abhishek Katoch , et al. (4 additional authors not shown)

Abstract: Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be heterogeneous, either through photo-generated domain growth or by generating topological defects, and this impacts the dynamics of the system. However, this nanoscale… ▽ More Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be heterogeneous, either through photo-generated domain growth or by generating topological defects, and this impacts the dynamics of the system. However, this nanoscale heterogeneity has not been directly observed. Here we use time- and spectrally resolved coherent X-ray imaging to track the prototypical light induced insulator-to-metal phase transition in vanadium dioxide on the nanoscale with femtosecond time resolution. We show that the early-time dynamics are independent of the initial spatial heterogeneity and observe a 200 fs switch to the metallic phase. A heterogeneous response emerges only after hundreds of picoseconds. Through spectroscopic imaging, we reveal that the transient metallic phase is a highly orthorhombically strained rutile metallic phase, an interpretation that is in contrast to those based on spatially averaged probes. Our results demonstrate the critical importance of spatially and spectrally resolved measurements for understanding and interpreting the transient phases of quantum materials. △ Less

Submitted 15 January, 2023; v1 submitted 17 February, 2022; originally announced February 2022.

Journal ref: Nature Physics 2022

Bulk band structure of Sb$_2$Te$_3$ determined by angle-resolved photoemission spectroscopy

Authors: Henriette E. Lund, Klara Volckaert, Paulina Majchrzak, Alfred J. H. Jones, Marco Bianchi, Martin Bremholm, Philip Hofmann

Abstract: The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state Dirac point. The valence band maximum has been calculated to be either near the Brillouin zone centre or in a low-symmetry position in the $\barΓ-\bar{M}$ azimut… ▽ More The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state Dirac point. The valence band maximum has been calculated to be either near the Brillouin zone centre or in a low-symmetry position in the $\barΓ-\bar{M}$ azimuthal direction. In order to observe the full energy range of the valence band, the strongly p-doped crystals are counter-doped by surface alkali adsorption. The data show that that the absolute valence band maximum is likely to be found at the bulk $Γ$ point and predictions of a low-symmetry position with an energy higher than the surface Dirac point can be ruled out. △ Less

Submitted 4 September, 2021; originally announced September 2021.

Comments: 6 pages, 4 figures

Ultrafast electronic line width broadening in the C 1s core level of graphene

Authors: Davide Curcio, Sahar Pakdel, Klara Volckaert, Jill A. Miwa, Søren Ulstrup, Nicola Lanatà, Marco Bianchi, Dmytro Kutnyakhov, Federico Pressacco, Günter Brenner, Siarhei Dziarzhytski, Harald Redlin, Steinn Agustsson, Katerina Medjanik, Dmitry Vasilyev, Hans-Joachim Elmers, Gerd Schönhense, Christian Tusche, Ying-Jiun Chen, Florian Speck, Thomas Seyller, Kevin Bühlmann, Rafael Gort, Florian Diekmann, Kai Rossnagel , et al. (9 additional authors not shown)

Abstract: Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the… ▽ More Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the detailed energy distribution of the photoelectrons. Ultrafast pump-probe techniques add a new dimension to such studies, introducing the ability to probe a transient state of the many-body system. Here we use a free electron laser to investigate the effect of a transiently excited electron gas on the core level spectrum of graphene, showing that it leads to a large broadening of the C 1s peak. Confirming a decade-old prediction, the broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron system, rather than by vibrational excitations. This interpretation is supported by a line shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in agreement with electronic temperature values obtained from valence band data. Furthermore, making use of time- and momentum-resolved C 1s spectra, we illustrate how the momentum change of the outgoing core electrons leads to a small but detectable change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the narrow $σ$-band in the C 1s state. The results demonstrate that the XPS line shape can be used as an element-specific and local probe of the excited electron system and that X-ray photoelectron diffraction investigations remain feasible at very high electronic temperatures. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Comments: 16 pages, 12 figures

Journal ref: Phys. Rev. B 104, 161104 (2021)

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Authors: P. Majchrzak, K. Volckaert, A. G. Cabo, D. Biswas, M. Bianchi, S. K. Mahatha, M. Dendzik, F. Andreatta, S. S. Grønborg, I. Marković, J. M. Riley, J. C. Johannsen, D. Lizzit, L. Bignardi, S. Lizzit, C. Cacho, O. Alexander, D. Matselyukh, A. S. Wyatt, R. T. Chapman, E. Springate, J. V. Lauritsen, P. D. C. King, C. E. Sanders, J. A. Miwa , et al. (2 additional authors not shown)

Abstract: The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing… ▽ More The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Comments: 10 pages, 4 figures

Hot carrier-assisted switching of the electron-phonon interaction in 1$T$-VSe$_2$

Authors: Paulina Majchrzak, Sahar Pakdel, Deepnarayan Biswas, Alfred J. H. Jones, Klara Volckaert, Igor Marković, Federico Andreatta, Raman Sankar, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Nicola Lanata, Young Jun Chang, Søren Ulstrup

Abstract: We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent… ▽ More We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed. △ Less

Submitted 12 November, 2020; originally announced November 2020.

Comments: 24 pages including supplemental material, 4 figures in the main text and 4 figures in the supplemental material

Journal ref: Phys. Rev. B 103, 241108 (2021)

Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$

Authors: Deepnarayan Biswas, Alfred J. H. Jones, Paulina Majchrzak, Byoung Ki Choi, Tsung-Han Lee, Klara Volckaert, Jiagui Feng, Igor Marković, Federico Andreatta, Chang-Jong Kang, Hyuk ** Kim, In Hak Lee, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam S. Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Young Jun Chang , et al. (2 additional authors not shown)

Abstract: Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin… ▽ More Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light. △ Less

Submitted 27 July, 2020; originally announced July 2020.

Comments: 23 pages including supplementary information, 3 figures in the main text and 6 figures in the supplemental text

Journal ref: Nano Lett. 21, 1968-1975 (2021)

Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES

Authors: Alfred J. H. Jones, Ryan Muzzio, Paulina Majchrzak, Sahar Pakdel, Davide Curcio, Klara Volckaert, Deepnarayan Biswas, Jacob Gobbo, Simranjeet Singh, Jeremy T. Robinson, Kenji Watanabe, Takashi Taniguchi, Timur K. Kim, Cephise Cacho, Nicola Lanata, Jill A. Miwa, Philip Hofmann, Jyoti Katoch, Søren Ulstrup

Abstract: The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi ener… ▽ More The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The do** dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and do** where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 16 pages, 4 figures. A revised version of the manuscript has been accepted for publication in Advanced Materials

Journal ref: Adv. Mater. 32, 2001656 (2020)

Accessing the spectral function in a current-carrying device

Authors: Davide Curcio, Alfred J. H. Jones, Ryan Muzzio, Klara Volckaert, Deepnarayan Biswas, Charlotte E. Sanders, Pavel Dudin, Cephise Cacho, Simranjeet Singh, Kenji Watanabe, Takashi Taniguchi, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup, Philip Hofmann

Abstract: The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known abou… ▽ More The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Comments: 9 pages, 8 figures

Weyl-like points from band inversions of spin-polarised surface states in NbGeSb

Authors: I. Marković, C. A. Hooley, O. J. Clark, F. Mazzola, M. D. Watson, J. M. Riley, K. Volckaert, K. Underwood, M. S. Dyer, P. A. E. Murgatroyd, K. J. Murphy, P. Le Fèvre, F. Bertran, J. Fujii, I. Vobornik, S. Wu, T. Okuda, J. Alaria, P. D. C. King

Abstract: Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by al… ▽ More Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Comments: In press at Nature Communications. This is the originally submitted manuscript prior to changes during the review process. Contains 20+6 pages, including Supplementary Information

Layer and orbital interference effects in photoemission from transition metal dichalcogenides

Authors: Habib Rostami, Klara Volckaert, Nicola Lanata, Sanjoy K. Mahatha, Charlotte E. Sanders, Marco Bianchi, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Jill A. Miwa, Alexander V. Balatsky, Philip Hofmann, Søren Ulstrup

Abstract: In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the… ▽ More In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the $\bar{K}$-valley of MoS$_2$. In SL MoS$_2$ we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo $d$ orbitals. In BL MoS$_2$ an additional inter-layer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS$_2$. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 100, 235423 (2019)

Momentum-resolved linear dichroism in bilayer MoS$_2$

Authors: Klara Volckaert, Habib Rostami, Deepnarayan Biswas, Igor Marković, Federico Andreatta, Charlotte E. Sanders, Paulina Majchrzak, Cephise Cacho, Richard T. Chapman, Adam Wyatt, Emma Springate, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Sanjoy K. Mahatha, Marco Bianchi, Nicola Lanata, Phil D. C. King, Jill A. Miwa, Alexander V. Balatsky, Philip Hofmann, Søren Ulstrup

Abstract: Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio… ▽ More Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 10 pages including supporting information, 3 figures in the main paper and 4 figures in the supporting information

Journal ref: Phys. Rev. B 100, 241406 (2019)

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Authors: Dmytro Kutnyakhov, Rui Patrick Xian, Maciej Dendzik, Michael Heber, Federico Pressacco, Steinn Ymir Agustsson, Lukas Wenthaus, Holger Meyer, Sven Gieschen, Giuseppe Mercurio, Adrian Benz, Kevin Bühlman, Simon Däster, Rafael Gort, Davide Curcio, Klara Volckaert, Marco Bianchi, Charlotte Sanders, Jill Atsuko Miwa, Søren Ulstrup, Andreas Oelsner, Christian Tusche, Ying-Jiun Chen, Dmitrii Vasilyev, Katerina Medjanik , et al. (16 additional authors not shown)

Abstract: Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectro… ▽ More Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for map** of 3D band structures in ($k_x$, $k_y$, $E$) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å $^{-1}$ diameter in a binding-energy range of several eV, resolving about $2.5\times10^5$ data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe$_2$. △ Less

Submitted 18 September, 2019; v1 submitted 28 June, 2019; originally announced June 2019.

Journal ref: Review of Scientific Instruments 91, 013109 (2020)

Anisotropic two-dimensional screening at the surface of black phosphorus

Authors: Brian Kiraly, Elze J. Knol, Klara Volckaert, Deepnarayan Biswas, Alexander N. Rudenko, Danil A. Prishchenko, Vladimir G. Mazurenko, Mikhail I. Katsnelson, Philip Hofmann, Daniel Wegner, Alexander A. Khajetoorians

Abstract: Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic disper… ▽ More Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic dispersion. Here, we use the adsorption of individual potassium atoms on the surface of black phosphorus to vary the near-surface do** over a wide range, while simultaneously probing the dielectric screening via the ordering of the adsorbed atoms. Using scanning tunneling microscopy, we visualize the role of strongly anisotropic screening which leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band-bending induced confinement potential near the surface. We corroborate the observed behavior with coverage-dependent studies of the electronic structure with angle-resolved photoemission. △ Less

Submitted 1 July, 2019; v1 submitted 6 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Lett. 123, 216403 (2019)