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Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
Authors:
P. A. Mortemousque,
S. Rosenius,
G. Pica,
D. P. Franke,
T. Sekiguchi,
A. Truong,
M. P. Vlasenko,
L. S. Vlasenko,
M. S. Brandt,
R. G. Elliman,
K. M. Itoh
Abstract:
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The exper…
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Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.
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Submitted 14 November, 2016; v1 submitted 12 June, 2015;
originally announced June 2015.
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Spin-dependent recombination at arsenic donors in ion-implanted silicon
Authors:
David P. Franke,
Manabu Ostuka,
Takashi Matsuoka,
Leonid S. Vlasenko,
Marina P. Vlasenko,
Martin S. Brandt,
Kohei M. Itoh
Abstract:
Spin-dependent transport processes in thin near-surface do** regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the m…
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Spin-dependent transport processes in thin near-surface do** regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.
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Submitted 21 July, 2014;
originally announced July 2014.
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Spin-dependent recombination involving oxygen-vacancy complexes in silicon
Authors:
David P. Franke,
Felix Hoehne,
Leonid S. Vlasenko,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is…
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Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between $^{31}$P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics are studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin 1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.
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Submitted 26 February, 2014; v1 submitted 24 February, 2014;
originally announced February 2014.
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Spin Selection Rule-Based Sub-Millisecond Hyperpolarization of Nuclear Spins in Silicon
Authors:
Felix Hoehne,
Lukas Dreher,
David P. Franke,
Martin Stutzmann,
Leonid S. Vlasenko,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme i…
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In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly-coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of approx. 100 ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.
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Submitted 16 August, 2013;
originally announced August 2013.
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Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
Authors:
P. A. Mortemousque,
T. Sekiguchi,
C. Culan,
M. P. Vlasenko,
R. G. Elliman,
L. S. Vlasenko,
K. M. Itoh
Abstract:
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for th…
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Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.
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Submitted 11 August, 2012;
originally announced August 2012.
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Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
Authors:
H. Morishita,
L. S. Vlasenko,
H. Tanaka,
K. Semba,
K. Sawano,
Y. Shiraki,
M. Eto,
K. M. Itoh
Abstract:
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and…
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Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and $-β| \uparrow \downarrow > + α| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $α$ and $β$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.
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Submitted 28 October, 2009; v1 submitted 6 July, 2009;
originally announced July 2009.
