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Whispering-Gallery Mode Resonator Technique with Microfluidic Channel for Permittivity Measurement of Liquids
Authors:
Alexey I. Gubin,
Alexander A. Barannik,
Nickolay T. Cherpak,
Irina A Protsenko,
Sergey Pud,
Andreas Offenhaeusser,
Svetlana A. Vitusevich
Abstract:
Studies of biochemical liquids require precise determination of their complex permittivity. We developed a microwave characterization technique on the basis of a high-quality whispering-gallery mode (WGM) sapphire resonator with a microfluidic channel filled with the liquid under test. A novel approach allows obtaining the complex permittivity of biochemical liquids of sub-microliter/nanoliter vol…
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Studies of biochemical liquids require precise determination of their complex permittivity. We developed a microwave characterization technique on the basis of a high-quality whispering-gallery mode (WGM) sapphire resonator with a microfluidic channel filled with the liquid under test. A novel approach allows obtaining the complex permittivity of biochemical liquids of sub-microliter/nanoliter volumes with high accuracy. The method is based on special procedure of analysis of the interaction of electromagnetic field with liquid in WGM microfluidic resonator and measurements of both the WGM resonance frequency shift and the change of the inverse quality factor. The approach is successfully applied to obtain the complex permittivity in the Ka band of glucose, albumin bovine serum, lactalbumin and cytochrome C aqueous solutions using the developed microwave technique.
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Submitted 3 May, 2022;
originally announced May 2022.
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Single Whispering-Gallery-Mode Resonator With Microfluidic Chip as a Basis for Multifrequency Microwave Permittivity Measurement of Liquids
Authors:
Alexey I. Gubin,
Irina A. Protsenko,
Alexander A. Barannik,
Nickolay T. Cherpak,
Svetlana A. Vitusevich
Abstract:
The accurate measurement of complex liquid permittivity in a frequency range provides important information on liquid properties in comparison to single frequency permittivity investigations. The multifrequency microwave characterization technique based on a single quartz whispering-gallery-mode (WGM) resonator with a microfluidic chip are proposed, developed, and demonstrated. This technique allo…
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The accurate measurement of complex liquid permittivity in a frequency range provides important information on liquid properties in comparison to single frequency permittivity investigations. The multifrequency microwave characterization technique based on a single quartz whispering-gallery-mode (WGM) resonator with a microfluidic chip are proposed, developed, and demonstrated. This technique allows the complex permittivity of small volumes of liquid to be measured at six resonant frequencies in the 30-40 GHz frequency range. The calibration is performed by simulating the measurement cell and by plotting the calibration nomogram charts for all six investigated frequencies. The novel approach is applied in studies of the complex permittivity of the L-lysine in water solutions. The results open up possibilities to investigate the complex permittivity of biological liquids at several frequencies and to further develop the microwave dielectrometry of small liquid volumes in a certain frequency range using the quasi-optical nature of a single high-Q WGM resonator.
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Submitted 29 April, 2022;
originally announced May 2022.
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Mesoporous alumina- and silica-based crystalline nanocomposites with tailored anisotropy: methodology, structure and properties
Authors:
A. V. Kityk,
A. Andrushchak,
Ya. Shchur,
V. T. Adamiv,
O. Yaremko,
M. Lelonek,
S. A. Vitusevich,
O. Kityk,
R. Wielgosz,
W. Piecek,
M. Busch,
K. Sentker,
P. Huber
Abstract:
We present several recently synthesized nanocomposites consisting of liquid crystals as well as an organic molecular crystal embedded into the nanochannels of mesoporous alumina and silica. As liquid-crystalline mesogens achiral, nematogen and chiral cholesteric guest molecules infiltrated into nanochannels by spontaneous imbibition were chosen. The molecular ordering inside the nanochannels, whic…
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We present several recently synthesized nanocomposites consisting of liquid crystals as well as an organic molecular crystal embedded into the nanochannels of mesoporous alumina and silica. As liquid-crystalline mesogens achiral, nematogen and chiral cholesteric guest molecules infiltrated into nanochannels by spontaneous imbibition were chosen. The molecular ordering inside the nanochannels, which can be tailored by modifying the surface anchoring, was characterized by optical polarimetry (linear and/or circular birefringence) in combination with X-ray diffraction. For the synthesis of the solid crystalline nanocomposites ferroelectric triglycine sulfate (TGS) nanocrystals were deposited into the nanochannels by slow evaporation of saturated water solutions imbibed into the porous hosts. Their textural and physicochemical properties were explored by x-ray diffraction, scanning electron microscopy and dielectric techniques.
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Submitted 20 February, 2020;
originally announced February 2020.
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Microwave Quenching in DC-biased Coplanar Waveguide Based on $YBa_2Cu_3O_{7-δ}$ Thin Film
Authors:
Nickolay T. Cherpak,
Alexey I. Gubin,
Alexander A. Lavrinovich,
Svetlana A. Vitusevich
Abstract:
In this paper, we report on the results of features in the discovered effect of a strong change in the microwave losses (quenching) in HTS-based coplanar waveguide (CPW) at certain values of the input power $P_{in}$ and direct current (DC) $I_{dc}$. Two waveguides were studied: CPW-150 and CPW-75, fabricated of epitaxial 150 nm and 75 nm YBCO films. The insertion loss of CPW,…
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In this paper, we report on the results of features in the discovered effect of a strong change in the microwave losses (quenching) in HTS-based coplanar waveguide (CPW) at certain values of the input power $P_{in}$ and direct current (DC) $I_{dc}$. Two waveguides were studied: CPW-150 and CPW-75, fabricated of epitaxial 150 nm and 75 nm YBCO films. The insertion loss of CPW, $IL = 10 lg (P_{out} / P_{in})$, was measured versus both the operating temperature and the bias DC current $I_{dc}$ when a fixed level of the input X-band pulsed MW signal $P_{in}$ was applied. Here $P_{out}$ is the power measured at the CPW output. A pulse duration $τ_i$ was 5 $μs$ with pulse repetition period T = 40 $μs$. Experiments showed a noticeable difference in specific values of $I^*= I_{dc}$ corresponding to the $P_{in}$ dependent quenching phenomenon in CPW-150 and CPW-75. With a weak input signal the difference in behavior of CPWs is anticipated, i.e., quenching occurs at a lower current for thinner film. For $P_{in}>1W$ the situation is opposite, i.e., quenching for CPW-150 takes place at a lower $I^*$. This is explained by stronger microwave heating of CPW-150.
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Submitted 16 April, 2019;
originally announced April 2019.
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Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime
Authors:
V. A. Sydoruk,
S. A. Vitusevich,
H. Hardtdegen,
M. V. Petrychuk,
A. V. Naumov,
V. V. Korotyeyev,
V. A. Kochelap,
A. E. Belyaev
Abstract:
We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. This effect has great impact on fluc…
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We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. This effect has great impact on fluctuation characteristics of studied NWs. At low voltages, we found that the normalized noise level increases with decreasing NW width. In the SCLC regime, a further increase in the normalized noise intensity (up to 1E4 times) was observed, as well as a change in the shape of the spectra with a tendency towards slope -3/2. We suggest that the features of the electric current and noise found in the NWs are of a general character and will have an impact on the development of NW-based devices.
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Submitted 14 January, 2017;
originally announced January 2017.
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DC-assisted microwave quenching of YBa2Cu3O7-δ coplanar waveguide to a highly dissipative state
Authors:
N. T. Cherpak,
A. A. Lavrinovich,
A. I. Gubin,
S. A. Vitusevich
Abstract:
The paper reports on finding the effect of a strong change in the microwave losses in an HTS-based coplanar waveguide (CPW) at certain values of the input power Pin and direct current Idc. CPW on the basis of 150 nm thick YBa2Cu3O7-δ epitaxial film on a single crystal MgO substrate was studied experimentally. A sharp and reversible transition of the CPW into a strongly dissipative state at the cer…
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The paper reports on finding the effect of a strong change in the microwave losses in an HTS-based coplanar waveguide (CPW) at certain values of the input power Pin and direct current Idc. CPW on the basis of 150 nm thick YBa2Cu3O7-δ epitaxial film on a single crystal MgO substrate was studied experimentally. A sharp and reversible transition of the CPW into a strongly dissipative state at the certain meanings of Pin and Idc depending on temperature was observed. Apparently the effect can be explained by self-heating of HTS structure caused by magnetic flux flow under the joint influence of MW and DC.
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Submitted 30 April, 2015;
originally announced April 2015.
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The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts
Authors:
A. V. Sachenko,
A. E. Belyaev,
N. S. Boltovets,
S. A. Vitusevich,
R. V. Konakova,
S. V. Novitskii,
V. N. Sheremet
Abstract:
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor b…
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Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor bulk, with allowance being made for electron freeze-out at helium temperatures. Contact ohmicity in the 4.2/30K temperature range is due to accumulation band bending near shunt ends at the metal/semiconductor interface.
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Submitted 8 January, 2014;
originally announced January 2014.
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Low-frequency Noise in Individual Carbon Nanotube Field-Effect Transistors with Top, Side and Back Gate Configurations: Effect of Gamma Irradiation
Authors:
V. A. Sydoruk,
K. Goß,
C. Meyer,
M. V. Petrychuk,
B. A. Danilchenko,
P. Weber,
C. Stampfer,
J. Li,
S. A. Vitusevich
Abstract:
We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and Al2O3. Before treatment, strong generation-recombination (GR) noise components are observed. These data are used to identify several charge traps related to dielectr…
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We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and Al2O3. Before treatment, strong generation-recombination (GR) noise components are observed. These data are used to identify several charge traps related to dielectric layers of the FETs by determining their activation energy. Investigation of samples with a single SiO2 dielectric layer as well as with two dielectric layers allows us to separate traps for each of the two dielectric layers. We reveal that each charge trap level observed in the side gate operation splits into two levels in top gate operation due to a different potential profile along the CNT channel. After gamma irradiation, only reduced flicker noise is registered in the noise spectra, which indicates a decrease of the number of charge traps. The mobility, which is estimated to be larger than 2x10^4 cm2V-1s-1 at room temperature, decreases only slightly after radiation treatment demonstrating high radiation hardness of the CNTs. Finally, we study the influence of Schottky barriers at the metal-nanotube interface on the transport properties of FETs analyzing the behavior of the flicker noise component.
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Submitted 18 November, 2013;
originally announced November 2013.
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Noise and Transport Characterization of Single Molecular Break Junctions with Individual Molecule
Authors:
V. A. Sydoruk,
D. Xiang,
S. A. Vitusevich,
M. V. Petrychuk,
A. Vladyka,
Y. Zhang,
A. Offenhäusser,
V. A. Kochelap,
A. E. Belyaev,
D. Mayer
Abstract:
We studied the noise spectra of molecule-free and molecule-containing mechanically controllable break junctions. Both types of junctions revealed typical 1/ f noise characteristics at different distances between the contacts with square dependence of current noise power spectral density on current. Additional Lorentzian-shape (1/ f 2) noise components were recorded only when nanoelectrodes were br…
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We studied the noise spectra of molecule-free and molecule-containing mechanically controllable break junctions. Both types of junctions revealed typical 1/ f noise characteristics at different distances between the contacts with square dependence of current noise power spectral density on current. Additional Lorentzian-shape (1/ f 2) noise components were recorded only when nanoelectrodes were bridged by individual 1,4 benzenediamine molecule. The characteristic frequency of the revealed 1/ f 2 noise related to a single bridging molecule correlates with the lock-in current amplitudes. The recorded behavior of Lorentzian-shape noise component as a function of current is interpreted as the manifestation of a dynamic reconfiguration of molecular coupling to the metal electrodes. We propose a phenomenological model that correlates the charge transport via a single molecule with the reconfiguration of its coupling to the metal electrodes. Experimentally obtained results are in good agreement with theoretical ones and indicate that coupling between the molecule metal electrodes is important aspect that should be taken into account.
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Submitted 18 June, 2012;
originally announced June 2012.
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Millimeter-wave study of London penetration depth temperature dependence in Ba(Fe0.926Co0.074)2As2 single crystal
Authors:
A. A. Barannik,
N. T. Cherpak,
N. Ni,
M. A. Tanatar,
S. A. Vitusevich,
V. N. Skresanov,
P. C. Canfield,
R. Prozorov,
V. V. Glamazdin,
K. I. Torokhtii
Abstract:
In-plane surface Ka-band microwave impedance of optimally doped single crystals of the Fe-based superconductor Ba(Fe0.926Co0.074)2As2 (Tc= 22.8K) was measured. Sensitive sapphire disk quasi-optical resonator with high-Tc cuprate conducting endplates was developed specially for Fe-pnictide superconductors. It allowed finding temperature variation of London penetration depth in a form of power law,…
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In-plane surface Ka-band microwave impedance of optimally doped single crystals of the Fe-based superconductor Ba(Fe0.926Co0.074)2As2 (Tc= 22.8K) was measured. Sensitive sapphire disk quasi-optical resonator with high-Tc cuprate conducting endplates was developed specially for Fe-pnictide superconductors. It allowed finding temperature variation of London penetration depth in a form of power law, namely Δλ(T)~ Tn with n = 2.8 from low temperatures up to at least 0.6Tc consisted with radio-frequency measurements. This exponent points towards nodeless state with pairbreaking scattering, which can support one of the extended s-pairing symmetries. The dependence λ(T) at low temperatures is well described by one superconducting small-gap (Δ\cong 0.75 in kTc units, where k is Boltzman coefficient) exponential dependence.
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Submitted 30 June, 2011;
originally announced June 2011.
