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Temperature Dam** of Magneto-Intersubband Resistance Oscillations in Magnetically Entangled Subbands
Authors:
Sara Abedi,
S. A. Vitkalov,
A. A. Bykov,
A. K. Bakarov
Abstract:
Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with de…
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Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature dam** factor: $A_{MISO}(T)=X/\sinh(X)$, where $X=2π^2kTδf$ and $δf$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed.
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Submitted 25 May, 2021;
originally announced May 2021.
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Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots
Authors:
A. A. Bykov,
I. S. Strygin,
A. V. Goran,
E. E. Rodyakina,
D. V. Nomokonov,
I. V. Marchishin,
S. Abedi,
S. A. Vitkalov
Abstract:
The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated…
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The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated antidot lattice are observed only for the first subband. It is found that microwave irradiation under the cyclotron resonance condition results in the formation of resistance oscillations periodic in the inverse magnetic field in the region of the main commensurability peak. It is established that the period of these oscillations corresponds to the period of magneto-intersubband oscillations. The observed effect is explained by the increase in the rate of intersubband scattering caused by the difference between the electron heating in the subbands E1 and E2.
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Submitted 6 January, 2021;
originally announced January 2021.
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Anomalous Decay of Quantum Resistance Oscillations of Two Dimensional Helical Electrons in Magnetic Field
Authors:
S. Abedi,
S. A. Vitkalov,
N. N. Mikhailov,
Z. D. Kvon
Abstract:
Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of t…
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Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of the oscillations with temperature T shows that the parameter $ξ$ contains two terms: $ξ=ξ_1+ξ_2 T$. The temperature independent term, $ξ_1$, describes reduction of electron mean free path in magnetic field B pointing toward suppression of the topological protection of the electron states against impurity scattering. The temperature dependent term, $ξ_2 T$, indicates increase of the reciprocal velocity of 2D helical electrons suggesting modification of the electron spectrum in magnetic fields.
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Submitted 8 June, 2019;
originally announced June 2019.
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Positive Quantum Magnetoresistance in Tilted Magnetic Field
Authors:
William Mayer,
Areg Ghazaryan,
Pouyan Ghaemi,
Sergey Vitkalov,
A. A. Bykov
Abstract:
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de…
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Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de Haas resistance oscillations due to modification of the electron spectrum via enhanced Zeeman splitting. Surprisingly no quantization of the spectrum is detected when the Zeeman energy exceeds the half of the cyclotron energy suggesting an abrupt transformation of the electron dynamics. Observed angular evolution of QPMR implies strong mixing between spin subbands. Theoretical estimations indicate that in the presence of spin-orbital interaction the elastic impurity scattering provides significant contribution to the spin mixing in GaAs quantum wells at high filling factors.
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Submitted 27 November, 2016;
originally announced November 2016.
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Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields
Authors:
William Mayer,
Sergey Vitkalov,
A. A. Bykov
Abstract:
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of elec…
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Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of electron density of states. Magnetic field tilt inverts these oscillations. Surprisingly the strongest inverted oscillations are observed at a tilt corresponding to nearly absent modulation of the electron density of states in regime of magnetic breakdown of semiclassical electron orbits. This phenomenon establishes an example of quantum resistance oscillations due to Landau quantization, which occur in electron systems with a constant density of states.
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Submitted 2 May, 2016;
originally announced May 2016.
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Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
Authors:
William Mayer,
Jesse Kanter,
Javad Shabani,
Sergey Vitkalov,
A. K. Bakarov,
A. A. Bykov
Abstract:
The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the…
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The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the $i^{th}$ and $j^{th}$ subbands are observed and obey the relation $Δ_{ij}=E_j-E_i=k\cdot\hbarω_c$, where $ω_c$ is the cyclotron frequency and $k$ is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At $\hbarω_c \ll Δ_{12}$ the in-plane magnetic field increases considerably the gap $Δ_{12}$, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields $\hbarω_c \gg Δ_{12}$ relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At $\hbarω_c \approx Δ_{12}$ the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number $k$ terminate, while MISO corresponding to even $k$ evolve $continuously$ into the high field regime corresponding to $\hbarω_c \gg Δ_{12}$
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Submitted 8 March, 2016;
originally announced March 2016.
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Interaction of 3D mesostructures composed of Pd-Ni alloy nanowires with low-temperature oxygen plasma
Authors:
Galina Strukova,
Gennady Strukov,
Igor Khodos,
Sergey Vitkalov
Abstract:
In this article we report about active interaction of volumetric mesoscopic structures composed of PdNi alloy nanowires with low temperature nonequilibrium oxygen plasma. Object of our study is fine 3D meso-structures, which were fabricated via a self-organization of nanowires growing during the electrodeposition of metals on a template.
In this article we report about active interaction of volumetric mesoscopic structures composed of PdNi alloy nanowires with low temperature nonequilibrium oxygen plasma. Object of our study is fine 3D meso-structures, which were fabricated via a self-organization of nanowires growing during the electrodeposition of metals on a template.
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Submitted 17 December, 2015;
originally announced December 2015.
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Frequency dispersion of nonlinear response of thin superconducting films in Berezinskii-Kosterlitz-Thouless state
Authors:
Scott Dietrich,
William Mayer,
Sean Byrnes,
Sergey Vitkalov,
A. Sergeev,
Anthony T. Bollinger,
Ivan Bozovic
Abstract:
The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the superconducting transition. The nonlinear response decreases by several orders of magnitude within a few GHz of a cutoff frequency $ν_{cut} \approx$ 2…
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The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the superconducting transition. The nonlinear response decreases by several orders of magnitude within a few GHz of a cutoff frequency $ν_{cut} \approx$ 2 GHz. Numerical simulations that assume an ac response to follow the dc V-I characteristics of the films reproduce well the low frequency behavior, but fail above $ν_{cut}$. The results indicate that two-dimensional superconductivity is resilient against high-frequency microwave radiation, because vortex-antivortex dissociation is dramatically suppressed in two-dimensional superconducting condensates oscillating at high frequencies.
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Submitted 23 February, 2015;
originally announced February 2015.
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Dynamics of Quantal Heating in Electron Systems with Discrete Spectra
Authors:
Scott Dietrich,
William Mayer,
Sergey Vitkalov,
A. A. Bykov
Abstract:
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity oscillating at the beat frequency $f=f_1-f_2$ between two microwaves applied to 2D system at frequencies $f_1$ and $f_2$. The method provides $direct$ access to the…
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The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity oscillating at the beat frequency $f=f_1-f_2$ between two microwaves applied to 2D system at frequencies $f_1$ and $f_2$. The method provides $direct$ access to the dynamical characteristics of the heating and yields the inelastic scattering time $τ_{in}$ of 2D electrons. The obtained $τ_{in}$ is strongly temperature dependent, varying from 0.13 ns at 5.5K to 1 ns at 2.4K in magnetic field $B$=0.333T. When temperature $T$ exceeds the Landau level separation the relaxation rate $1/τ_{in}$ is proportional to $T^2$, indicating the electron-electron interaction as the dominant mechanism limiting the quantal heating. At lower temperatures the rate tends to be proportional to $T^3$, indicating considerable contribution from electron-phonon scattering.
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Submitted 9 October, 2014;
originally announced October 2014.
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3D-mesostructures obtained by self-organization of metallic nanowires
Authors:
G. K. Strukova,
G. V. Strukov,
S. V. Egorov,
A. Mazilkin,
I. I. Khodos,
S. A. Vitkalov
Abstract:
The architecture of novel metallic mesostructures obtained via self-organization of growing nanowires has been investigated. Seashell, fungus and lotus leafshaped structures are reproducibly formed by programmable pulse current electrodeposition on porous membranes. The samples several millimeters in size are obtained. SEM investigation has revealed that the frame of the metallic seashell presents…
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The architecture of novel metallic mesostructures obtained via self-organization of growing nanowires has been investigated. Seashell, fungus and lotus leafshaped structures are reproducibly formed by programmable pulse current electrodeposition on porous membranes. The samples several millimeters in size are obtained. SEM investigation has revealed that the frame of the metallic seashell presents a hierarchical system with elements of fractal selfsimilarity at the nano- and microlevels. The frame is a volumetric multilayer net with conical bundles of nanowires as building blocks. The Pd-Ni nanowires have V-like branches and periodic bulges . TEM study showed that the nanowires consist of nanocrystallites dispersed in an amorphous matrix. Their sizes range from 4 to 15 nm. Local inhomogeneity of PdNi solid solution was observed. In perspective, the proposed technique can be used as a 3D printer for the purposeful synthesis of novel materials with complex quantum nano-architecture.
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Submitted 31 July, 2014;
originally announced July 2014.
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Quantum oscillations of dissipative resistance in crossed electric and magnetic fields
Authors:
Scott Dietrich,
Sean Byrnes,
Sergey Vitkalov,
D. V. Dmitriev,
A. A. Bykov
Abstract:
Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the current-induced oscillations does not depend on the magnetic field and temperature. At a fixed current the oscillations are periodic in inverse magnetic fields with…
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Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the current-induced oscillations does not depend on the magnetic field and temperature. At a fixed current the oscillations are periodic in inverse magnetic fields with a period that does not depend on dc bias. The proposed model considers spatial variations of electron filling factor, which are induced by the electric current, as the origin of the resistance oscillations.
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Submitted 9 July, 2012; v1 submitted 25 June, 2012;
originally announced June 2012.
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Inter-subband resistance oscillations in crossed electric and magnetic fields
Authors:
Scott Dietrich,
Sean Byrnes,
Sergey Vitkalov,
A. V. Goran,
A. A. Bykov
Abstract:
Quantum oscillations of nonlinear resistance are investigated in response to electric current and magnetic field applied perpendicular to single GaAs quantum wells with two populated subbands. At small magnetic fields current-induced oscillations appear as Landau-Zener transitions between Landau levels inside the lowest subband. Period of these oscillations is proportional to the magnetic field. A…
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Quantum oscillations of nonlinear resistance are investigated in response to electric current and magnetic field applied perpendicular to single GaAs quantum wells with two populated subbands. At small magnetic fields current-induced oscillations appear as Landau-Zener transitions between Landau levels inside the lowest subband. Period of these oscillations is proportional to the magnetic field. At high magnetic fields different kind of quantum oscillations emerges with a period,which is independent of the magnetic field. At a fixed current the oscillations are periodic in inverse magnetic field with a period that is independent of the dc bias. The proposed model considers these oscillations as a result of spatial variations of the energy separation between two subbands induced by the electric current.
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Submitted 22 June, 2012;
originally announced June 2012.
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Quantum lifetime of 2D electron in magnetic field
Authors:
Scott Dietrich,
S. A. Vitkalov,
D. V. Dmitriev,
A. A. Bykov
Abstract:
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.
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Submitted 18 October, 2011;
originally announced October 2011.
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Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands
Authors:
A. A. Bykov,
A. V. Goran,
S. A. Vitkalov
Abstract:
Low-temperature electron magnetotransport in single GaAs quantum wells with two populated subbands is studied at large filling factors. Magneto-inter-subband (MIS) and acoustic-phonon induced oscillations of the dissipative resistance are found to be coexisting but interfering substantially with each other. The experiments show that amplitude of the MIS-oscillations enhances significantly by pho…
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Low-temperature electron magnetotransport in single GaAs quantum wells with two populated subbands is studied at large filling factors. Magneto-inter-subband (MIS) and acoustic-phonon induced oscillations of the dissipative resistance are found to be coexisting but interfering substantially with each other. The experiments show that amplitude of the MIS-oscillations enhances significantly by phonons, indicating "constructive interference" between the phonon scattering and the intersubband electron transitions. Temperature dam** of the quantum oscillations is found to be related to broadening of Landau levels caused by considerable electron-electron scattering.
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Submitted 22 December, 2009;
originally announced December 2009.
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Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells
Authors:
A. V. Goran,
A. A. Bykov,
A. I. Toropov,
S. A. Vitkalov
Abstract:
The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of t…
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The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of the MIS oscillations obeys condition $Δ_{12}=(E_2-E_1)=k \cdot \hbar ω_c$, where $Δ_{12}$ is the subband energy separation, $ω_c$ is the cyclotron frequency, and $k$ is the positive integer. At $T$=4.2 K the oscillations manifest themselves up to $k$=100. Strong temperature suppression of the magnetointersubband oscillations is observed. We show that the suppression is a result of electron-electron scattering. Our results are in good agreement with recent experiments, indicating that the sensitivity to electron-electron interaction is the fundamental property of magnetoresistance oscillations, originating from the second-order Dingle factor.
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Submitted 26 November, 2009; v1 submitted 24 August, 2009;
originally announced August 2009.
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Nonlinear resistance of 2D electrons in crossed electric and magnetic fields
Authors:
**g Qiao Zhang,
Sergey Vitkalov,
A. A. Bykov
Abstract:
The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs quantum wells with high electron density. The data are found to be in good agreement with theory, considering the strong nonlinearity of the resistivity as result…
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The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs quantum wells with high electron density. The data are found to be in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of the 2D electrons. Inelastic processes limit the diffusion. Comparison with the theory yields the inelastic scattering time of the two dimensional electrons. In the temperature range T=2-10(K) for overlap** Landau levels, the inelastic scattering rate is found to be proportional to T^2, indicating a dominant contribution of the electron-electron scattering to the inelastic relaxation. In a strong magnetic field, the nonlinear resistivity demonstrates scaling behavior, indicating a specific regime of electron heating of well-separated Landau levels. In this regime the inelastic scattering rate is found to be proportional to T^3, suggesting the electron-phonon scattering as the dominant mechanism of the inelastic relaxation.
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Submitted 23 June, 2009; v1 submitted 20 October, 2008;
originally announced October 2008.
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Effect of parallel magnetic field on the Zero Differential Resistance State
Authors:
N. Romero,
S. Mchugh,
M. P. Sarachik,
S. A. Vitkalov,
A. A. Bykov
Abstract:
The non-linear zero-differential resistance state (ZDRS) that occurs for highly mobile two-dimensional electron systems in response to a dc bias in the presence of a strong magnetic field applied perpendicular to the electron plane is suppressed and disappears gradually as the magnetic field is tilted away from the perpendicular at fixed filling factor $ν$. Good agreement is found with a model t…
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The non-linear zero-differential resistance state (ZDRS) that occurs for highly mobile two-dimensional electron systems in response to a dc bias in the presence of a strong magnetic field applied perpendicular to the electron plane is suppressed and disappears gradually as the magnetic field is tilted away from the perpendicular at fixed filling factor $ν$. Good agreement is found with a model that considers the effect of the Zeeman splitting of Landau levels enhanced by the in-plane component of the magnetic field.
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Submitted 30 July, 2008;
originally announced July 2008.
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Warming in systems with discrete spectrum: spectral diffusion of two dimensional electrons in magnetic field
Authors:
N. Romero Kalmanovitz,
A. A. Bykov,
S. A. Vitkalov,
A. I. Toropov
Abstract:
Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of an electric field to conductors heats electric charge carriers. Often an elevated electron temperature describes the result of the heating. This paper demonst…
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Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of an electric field to conductors heats electric charge carriers. Often an elevated electron temperature describes the result of the heating. This paper demonstrates that an electric field applied to a conductor with discrete electron spectrum produces a non-equilibrium electron distribution, which cannot be described by temperature. Such electron distribution changes dramatically the conductivity of highly mobile two dimensional electrons in a magnetic field, forcing them into a state with a zero differential resistance. Most importantly the results demonstrate that, in general, the effective overheating in the systems with discrete spectrum is significantly stronger than the one in systems with continuous and homogeneous distribution of the energy levels at the same input power.
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Submitted 3 July, 2008;
originally announced July 2008.
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Two-Parameter Scaling of Microwave Rectification vs Microwave Power at the Boundary between Two-Dimensional Electron Systems
Authors:
N. Romero Kalmanovitz,
I. Hoxha,
Y. **,
S. A. Vitkalov,
M. P. Sarachik,
Ivan A. Larkin,
T. M. Klapwijk
Abstract:
We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and microwave power. For frequencies above 4 GHz and different temperatures, the rectified voltage V_{dc} as a function of microwave power P can be scaled onto a singl…
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We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and microwave power. For frequencies above 4 GHz and different temperatures, the rectified voltage V_{dc} as a function of microwave power P can be scaled onto a single universal curve V*_{dc}=f*(P*). The scaled voltage is a linear function of power, V*_{dc} ~ P* for small power and proportional to P*^{1/2} at higher power. A theory is proposed that attributes the rectification to the thermoelectric response due to strong local overheating by the microwave radiation at the boundary between two dissimilar 2D metals. Excellent agreement is obtained between theory and experiment.
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Submitted 23 October, 2007;
originally announced October 2007.
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Zero differential resistance state of two dimensional electron systems in strong magnetic fields
Authors:
A. A. Bykov,
**g-qiao Zhang,
Sergey Vitkalov,
A. K. Kalagin,
A. K. Bakarov
Abstract:
Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance, which occurs above threshold value $I_{th}$ of the direct current. The state depends significantly on the temperature and is not observable above several Kel…
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Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance, which occurs above threshold value $I_{th}$ of the direct current. The state depends significantly on the temperature and is not observable above several Kelvins. Additional analysis shows lack of the linear stability of the 2D electron systems at $I>I_{th}$ and inhomogeneous, non-stationary pattern of the electric current in the zero differential resistance state. We suggest that the dc bias induced redistribution of the 2D electrons in energy space is the dominant mechanism leading to the new electron state.
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Submitted 3 March, 2007;
originally announced March 2007.
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Effect of DC electric field on longitudinal resistance of two dimensional electrons in a magnetic field
Authors:
**g-qiao Zhang,
Sergey Vitkalov,
A. A. Bykov,
A. K. Kalagin,
A. K. Bakarov
Abstract:
The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperature wh…
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The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperature where Shubnikov de Haas oscillations are absent. The scale of the electric fields essential for the effect is found to be proportional to temperature in the low temperature limit. We suggest that the strong reduction of the longitudinal resistance is the result of a nontrivial change in the distribution function of 2D electrons induced by the DC electric field. Comparison of the data with recent theory yields the inelastic electron-electon scattering time $τ_{in}$ and the quantum scattering time $τ_q$ of 2D electrons at high temperatures, a regime where previous methods were not successful.
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Submitted 27 July, 2006;
originally announced July 2006.
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Two Types of Microwave-Induced Magnetoresistance Oscillations in a 2D Electron Gas at Large Filling Factors
Authors:
A. A. Bykov,
A. V. Goran,
D. R. Islamov,
A. K. Bakarov,
**g-qiao Zhang,
Sergey Vitkalov
Abstract:
The influence of microwave radiation (1.2-140 GHz) on resistance of high-mobility two-dimensional electron gas in GaAs quantum wells is studied. Two series of microwave-induced magnetoresistance oscillations periodic in 1/B were observed under microwave radiation. The periods of oscillations are determined by the microwave frequency and power, correspondingly. The experimental data is qualitativ…
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The influence of microwave radiation (1.2-140 GHz) on resistance of high-mobility two-dimensional electron gas in GaAs quantum wells is studied. Two series of microwave-induced magnetoresistance oscillations periodic in 1/B were observed under microwave radiation. The periods of oscillations are determined by the microwave frequency and power, correspondingly. The experimental data is qualitatively explained by photon-assisted transport and Zener tunneling between Landau orbits.
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Submitted 15 March, 2006;
originally announced March 2006.
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Directed electron transport through ballistic quantum dot under microwave radiation
Authors:
**g-qiao Zhang,
Sergey Vitkalov,
Z. D. Kvon,
J. C. Portal,
A. Wieck
Abstract:
Rectification of microwave radiation by asymmetric, ballistic quantum dot is observed. The directed transport is studied at different frequency (1-40 GHz) temperatures (0.3K-6K)and magnetic field. Dramatic reduction of the rectification is found in magnetic fields at which the cyclotron (Larmor) radius of the electron orbits at Fermi level is smaller than the size of the quantum dot. It strongly…
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Rectification of microwave radiation by asymmetric, ballistic quantum dot is observed. The directed transport is studied at different frequency (1-40 GHz) temperatures (0.3K-6K)and magnetic field. Dramatic reduction of the rectification is found in magnetic fields at which the cyclotron (Larmor) radius of the electron orbits at Fermi level is smaller than the size of the quantum dot. It strongly suggests the ballistic nature of the observed nonlinear phenomena. Both symmetric and anti-symmetric with respect to the magnetic field contributions to the directed transport are presented. We have found that the behavior of the symmetric part of the rectified voltage with the magnetic field is different significantly for microwaves with different frequencies. A ballistic model of the directed transport is proposed.
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Submitted 4 April, 2005;
originally announced April 2005.
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Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
Authors:
Yeekin Tsui,
S. A. Vitkalov,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity ver…
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A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.
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Submitted 23 June, 2004;
originally announced June 2004.
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Magnetoconductivity of Insulating Silicon Inversion Layers
Authors:
Yeekin Tsui,
S. A. Vitkalov,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like densities, where a new energy scale $k_B Δ$ emerges which is not associated with either magnetic field or thermal effects. $B/T$ scaling of the magnetoconductivity br…
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The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like densities, where a new energy scale $k_B Δ$ emerges which is not associated with either magnetic field or thermal effects. $B/T$ scaling of the magnetoconductivity breaks down at the density $n_0$ where the energy scale $k_B Δ$ vanishes, near or at the critical density $n_c$ for the apparent metal-insulator transition. The different behavior of the magnetoconductivity at low and high densities suggests the existence of two distinct phases.
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Submitted 9 December, 2003;
originally announced December 2003.
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Does $m^*g^*$ diverge at a finite electron density in silicon inversion layers?
Authors:
M. P. Sarachik,
S. A. Vitkalov
Abstract:
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Landé $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direc…
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For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Landé $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direct determinations of the $g^*m^*$ obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.
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Submitted 4 September, 2002;
originally announced September 2002.
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In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment
Authors:
S. A. Vitkalov,
K. James,
B. N. Narozhny,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^σ(n)$ and…
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For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^σ(n)$ and the valley splitting $Δ_V(n)$ obtained from fits to the magnetoconductivity, although providing qualitatively correct behavior (including sign), do not yield quantitative agreement with the temperature dependence of the conductivity in zero magnetic field. Our results suggest the existence of additional scattering processes not included in the theory in its present form.
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Submitted 25 April, 2002;
originally announced April 2002.
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Spin polarization of strongly interacting 2D electrons: the role of disorder
Authors:
S. A. Vitkalov,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*μ_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $χ^* \propto (g^*m^*)$ exhibits critical behavior of the form…
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In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*μ_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $χ^* \propto (g^*m^*)$ exhibits critical behavior of the form $χ^* \propto (n - n_0)^{-α}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.
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Submitted 21 February, 2002;
originally announced February 2002.
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Microwave Rectification at the Boundary between Two-Dimensional Electron Systems
Authors:
I. Hoxha,
S. A. Vitkalov,
N. A. Zimbovskaya,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong…
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Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
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Submitted 16 October, 2001;
originally announced October 2001.
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Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's
Authors:
Sergey A. Vitkalov
Abstract:
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the main reason for the experimental observation. Comparison of two band model with experiment provides an upper limit for the electron-electron scattering time…
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Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the main reason for the experimental observation. Comparison of two band model with experiment provides an upper limit for the electron-electron scattering time $τ_{ee}$ in the dilute 2D electron system as a function of electron density $n_s$. The time $τ_{ee}$ increases gradually with $n_s$, becoming much greater than the transport scattering time $τ_p$ for densities $n_s>4 \times 10 ^{11}$ cm$^{-2}$. Strong electron-electron scattering is found for $1.22 \times 10 ^{11} <n_s<3 \times 10 ^{11}$ cm$^{-2}$, the region which is near to the apparent metal insulator transition.
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Submitted 22 February, 2001;
originally announced February 2001.
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Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
Authors:
S. A. Vitkalov,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to completely align the spins of the electrons are comparable. By small-angle Shubnikov-de Haas oscillation measurements that allow separate determinations of the spin-…
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Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to completely align the spins of the electrons are comparable. By small-angle Shubnikov-de Haas oscillation measurements that allow separate determinations of the spin-up and spin-down subband populations, we show that $H_{sat}=H_s$ to an accuracy of 5% for electron densities $n_s > 3 \times 10^{11}$ cm$^{-2}$.
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Submitted 25 April, 2001; v1 submitted 12 January, 2001;
originally announced January 2001.
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Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions
Authors:
S. A. Vitkalov,
Hairong Zheng,
K. M. Mertes,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_σ(n,T)$, where $H_σ$ obeys the empirical relation $H_σ=A (n) [Δ(n)^2 +T^2]^{1/2}$. The characteristic energy $k_B Δ$ associated with the magnetic field dependence of the co…
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For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_σ(n,T)$, where $H_σ$ obeys the empirical relation $H_σ=A (n) [Δ(n)^2 +T^2]^{1/2}$. The characteristic energy $k_B Δ$ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density $n_0$, signaling the approach to a zero-temperature quantum phase transition. We show that $H_σ=AT$ for densities near $n_0$.
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Submitted 9 May, 2001; v1 submitted 28 September, 2000;
originally announced September 2000.
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Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field
Authors:
S. A. Vitkalov,
H. Zheng,
K. M. Mertes,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spi…
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Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states.
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Submitted 30 August, 2000;
originally announced August 2000.
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Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field
Authors:
K. M. Mertes,
Hairong Zheng,
S. A. Vitkalov,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} c…
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We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0.
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Submitted 2 October, 2000; v1 submitted 23 June, 2000;
originally announced June 2000.
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Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
Authors:
Sergey A. Vitkalov,
Hairong Zheng,
K. M. Mertes,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H<H_{sat}, the phase of the second harmonic of…
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Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H<H_{sat}, the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states.
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Submitted 20 April, 2000; v1 submitted 12 April, 2000;
originally announced April 2000.
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Sharp Transition to a Spin-Ordered Phase in the 2D Electron System in Silicon MOSFET's
Authors:
S. A. Vitkalov,
H. Zheng,
K. M. Mertes,
M. P. Sarachik,
T. M. Klapwijk
Abstract:
This paper has been withdrawn by the authors. Measurements at many different angles spanning a broad range of electron densities indicate that the observed doubling of the period of Shubnikov-de Haas oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full interpretation of our data will be posted at a later dat…
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This paper has been withdrawn by the authors. Measurements at many different angles spanning a broad range of electron densities indicate that the observed doubling of the period of Shubnikov-de Haas oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full interpretation of our data will be posted at a later date.
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Submitted 31 August, 1999; v1 submitted 26 July, 1999;
originally announced July 1999.
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Vortex Drag in Quantum Hall Effect
Authors:
S. A. Vitkalov
Abstract:
A new model of momentum and electric field transfer between two adjacent 2D electron systems in the Quantum Hall Effect is proposed. The drag effect is due to momentum transfer from the vortex system of one layer to the vortex system of another layer. The remarkable result of this approach is periodical change of $sign$ of the dragged electric field with difference between the layer filling fact…
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A new model of momentum and electric field transfer between two adjacent 2D electron systems in the Quantum Hall Effect is proposed. The drag effect is due to momentum transfer from the vortex system of one layer to the vortex system of another layer. The remarkable result of this approach is periodical change of $sign$ of the dragged electric field with difference between the layer filling factors.
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Submitted 12 March, 1998;
originally announced March 1998.
