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Sculpting harmonic comb states in terahertz quantum cascade lasers by controlled engineering
Authors:
Elisa Riccardi,
M. Alejandro Justo Guerrero,
Valentino Pistore,
Lukas Seitner,
Christian Jirauschek,
Lianhe Li,
A. Giles Davies,
Edmund H. Linfield,
Miriam S. Vitiello
Abstract:
Optical frequency combs (FCs), that establish a rigid phase-coherent link between the microwave and optical domains of the electromagnetic spectrum, are emerging as a key high-precision tools for the development of quantum technology platforms. These include potential applications for communication, computation, information, sensing and metrology, and can extend from the near-infrared with micro-r…
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Optical frequency combs (FCs), that establish a rigid phase-coherent link between the microwave and optical domains of the electromagnetic spectrum, are emerging as a key high-precision tools for the development of quantum technology platforms. These include potential applications for communication, computation, information, sensing and metrology, and can extend from the near-infrared with micro-resonator combs, up to the technologically attractive terahertz (THz) frequency range, with powerful and miniaturized quantum cascade laser (QCL) FCs. The recently discovered ability of the QCLs to produce a harmonic frequency comb (HFC), a FC with large intermodal spacings, has attracted new interest in these devices for both applications and fundamental physics, particularly for the generation of THz tones of high spectral purity for high data rate wireless communication networks, for radiofrequency arbitrary waveform synthesis, and for the development of quantum key distributions. The controlled generation of harmonic states of a specific order remains, however, elusive in THz QCLs. Here we devise a strategy to obtain broadband HFC emission of a pre-defined order in QCL, by design. By patterning n regularly spaced defects on the top-surface of a double-metal Fabry-Perot QCL, we demonstrate harmonic comb emission with modes spaced by (n+1) free spectral range and with a record optical power/mode of ~270 $μW$.
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Submitted 6 November, 2023;
originally announced November 2023.
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Ultrashort pulse generation from a graphene-coupled passively mode-locked terahertz laser
Authors:
Elisa Riccardi,
Valentino Pistore,
Seonggil Kang,
Lukas Seitner,
Anna De Vetter,
Christian Jirauschek,
Juliette Mangeney,
Lianhe Li,
A. Giles Davies,
Edmund H. Linfield,
Andrea C. Ferrari,
Sukhdeep S. Dhillon,
Miriam S. Vitiello
Abstract:
The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. Ho…
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The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. However, this has not yet been achieved in the THz range, defining one of the longest standing goals over the last two decades. In fact, the realization of passive mode-locking has long been assumed to be inherently hindered by the fast recovery times associated with the intersubband gain of THz lasers. Here, we demonstrate a self-starting miniaturized ultra-short pulse THz laser, exploiting an original device architecture that includes the surface patterning of multilayer-graphene saturable absorbers distributed along the entire cavity of a double-metal semiconductor 2.30-3.55 THz wire laser. Self-starting pulsed emission with 4.0-ps-long pulses in a compact, all-electronic, all-passive and inexpensive configuration is demonstrated.
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Submitted 21 September, 2022;
originally announced September 2022.
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Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures
Authors:
M. Asgari,
L. Viti,
O. Balci,
S. M. Shinde,
J. Zhang,
H. Ramezani,
S. Sharma,
A. Meersha,
G. Menichetti,
C. McAleese,
B. Conran,
X. Wang,
A. Tomadin,
A. C. Ferrari,
M. S. Vitiello
Abstract:
The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration…
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The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN cap** to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection.
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Submitted 28 June, 2022;
originally announced June 2022.
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Lattice dynamics and elastic properties of black phosphorus
Authors:
Eva A. A. Pogna,
Alexeï Bosak,
Alexandra Chumakova,
Victor Milman,
Björn Winkler,
Leonardo Viti,
Miriam S. Vitiello
Abstract:
We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic re…
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We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic response of black phosphorus, described by the elastic moduli. The elastic stiffness coefficients obtained here provide an important benchmark for models of black phosphorus and related materials, such as phosphorene and black phosphorus nanotubes, recently emerged quantum materials, disclosing a huge potential for nanophotonics, optoelectronics, and quantum sensing.
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Submitted 8 June, 2022;
originally announced June 2022.
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Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
Authors:
Leonardo Viti,
Miriam Serena Vitiello
Abstract:
The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano…
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The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components by design, offering a unique platform for develo** new devices with a variety of ad-hoc properties. In this perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the developments of nanoelectronic, nanophotonic, optical and plasmonic devices, at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band-structure engineering can allow those devices to boost the vibrant field of quantum science and quantum technologies.
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Submitted 6 April, 2022;
originally announced April 2022.
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Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies
Authors:
Mahdi Asgari,
Dominique Coquillat,
Guido Menichetti,
Valentina Zannier,
Nina Dyakonova,
Wojciech Knap,
Lucia Sorba,
Leonardo Viti,
Miriam Serena Vitiello
Abstract:
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter…
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Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.
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Submitted 10 September, 2021;
originally announced September 2021.
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Chip-scale terahertz frequency combs through integrated intersubband polariton bleaching
Authors:
Francesco P. Mezzapesa,
Leonardo Viti,
Lianhe Li,
Valentino Pistore,
Sukhdeep Dhillon,
A. Giles Davies,
Edmund Linfield,
Miriam S. Vitiello
Abstract:
Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. Their large spectral bandwidth, high output powers and quantum-limited linewidths have facilitated the realization of THz pulses by active mode-locking and passive generation of…
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Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. Their large spectral bandwidth, high output powers and quantum-limited linewidths have facilitated the realization of THz pulses by active mode-locking and passive generation of optical frequency combs (FCs) through intracavity four-wave-mixing, albeit over a restricted operational regime. Here, we conceive an integrated architecture for the generation of high power (10 mW) THz FCs comprising an ultrafast THz polaritonic reflector, exploiting intersubband cavity polaritons, and a broad bandwidth (2.3-3.8 THz) heterogeneous THz QCL. Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. By tuning the group delay dispersion in an integrated geometry, through the exploitation of light induced bleaching of the intersubband-based THz polaritons, we demonstrate spectral resha** of the QCL emission and stable FC operation over an operational dynamic range of up to 38%, characterized by a single and narrow (down to 700 Hz) intermode beatnote. Our concept provides design guidelines for a new generation of compact, cost-effective, electrically driven chip-scale FC sources based on ultrafast polariton dynamics, paving the way towards the generation of mode locked THz micro-lasers that will strongly impact a broad range of applications in ultrafast sciences, data storage, high-speed communication and spectroscopy.
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Submitted 17 May, 2021;
originally announced May 2021.
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Homogeneous quantum cascade lasers operating as Terahertz frequency combs over their entire operational regime
Authors:
Alessandra Di Gaspare,
Leonardo Viti,
Harvey E. Beere,
David D. Ritchie,
Miriam S. Vitiello
Abstract:
We report a homogeneous quantum cascade laser (QCL) emitting at Terahertz (THz) frequencies, with a total spectral emission of about 0.6 THz centered around 3.3 THz, a current density dynamic range of Jdr=1.53, and a continuous wave output power of 7 mW. The analysis of the intermode beatnote unveils that the devised laser operates as optical frequency comb (FC) synthesizer over the whole laser op…
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We report a homogeneous quantum cascade laser (QCL) emitting at Terahertz (THz) frequencies, with a total spectral emission of about 0.6 THz centered around 3.3 THz, a current density dynamic range of Jdr=1.53, and a continuous wave output power of 7 mW. The analysis of the intermode beatnote unveils that the devised laser operates as optical frequency comb (FC) synthesizer over the whole laser operational regime, with up to 36 optically active laser modes delivering ~ 200 uW of optical power per comb tooth, a power level unreached so far in any THz QCL FC. A stable and narrow single beatnote, reaching a minimum linewidth of 500 Hz, is observed over a current density range of 240 A/cm2, and even across the negative differential resistance region. We further prove that the QCL frequency comb can be injection locked with moderate RF power at the intermode beatnote frequency, covering a locking range of 1.2 MHz. The demonstration of stable FC operation, in a QCL, over the full current density dynamic range, and without any external dispersion compensation mechanism, makes our proposed homogenous THz QCL an ideal tool for metrological application requiring mode-hop electrical tunability and a tight control of the frequency and phase jitter.
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Submitted 2 April, 2021;
originally announced April 2021.
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Tunable, grating-gated, graphene-on-polyimide terahertz modulators
Authors:
Alessandra Di Gaspare,
Eva A. A. Pogna,
Luca Salemi,
Osman Balci,
Alisson R. Cadore,
Sachin M. Shinde,
Lianhe Li,
Cinzia di Franco,
A. Giles Davies,
Edmund Linfield,
Andrea C. Ferrari,
Gaetano Scamarcio,
Miriam S. Vitiello
Abstract:
We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonan…
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We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies.
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Submitted 22 November, 2020;
originally announced December 2020.
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Terahertz frequency combs exploiting an on-chip solution processed graphene-quantum cascade laser coupled-cavity architecture
Authors:
F. P. Mezzapesa,
K. Garrasi,
J. Schmidt,
L. Salemi,
V. Pistore,
L. Li,
A. G. Davies,
E. H. Linfield,
M. Riesch,
C. Jirauschek,
T. Carey,
F. Torrisi,
A. C. Ferrari,
M. S. Vitiello
Abstract:
The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersu…
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The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology.
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Submitted 23 November, 2020;
originally announced November 2020.
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Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy
Authors:
Eva A. A. Pogna,
Mahdi Asgari,
Valentina Zannier,
Lucia Sorba,
Leonardo Viti,
Miriam S. Vitiello
Abstract:
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining hi…
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Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric or bolometric currents whose interplay is discussed as a function of photon density and material do**, therefore providing a route to engineer photo-responses by design.
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Submitted 21 November, 2020;
originally announced November 2020.
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Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies
Authors:
Leonardo Viti,
Alisson R. Cadore,
Xinxin Yang,
Andrei Vorobiev,
Jakob E. Muench,
Kenji Watanabe,
Takashi Taniguchi,
Jan Stake,
Andrea C. Ferrari,
Miriam S. Vitiello
Abstract:
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots…
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Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.
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Submitted 24 June, 2020; v1 submitted 18 June, 2020;
originally announced June 2020.
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HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise
Authors:
Leonardo Viti,
David G. Purdie,
Antonio Lombardo,
Andrea C. Ferrari,
Miriam S. Vitiello
Abstract:
Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide…
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Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.
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Submitted 21 April, 2020;
originally announced April 2020.
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Quantum Cascade Laser Based Hybrid Dual Comb Spectrometer
Authors:
Luigi Consolino,
Malik Nafa,
Michele De Regis,
Francesco Cappelli,
Katia Garrasi,
Francesco P. Mezzapesa,
Lianhe Li,
A. Giles Davies,
Edmund H. Linfield,
Miriam S. Vitiello,
Saverio Bartalini,
Paolo De Natale
Abstract:
Four-wave-mixing-based quantum cascade laser frequency combs (QCL-FC) are a powerful photonic tool, driving a recent revolution in major molecular fingerprint regions, i.e. mid- and far-infrared domains. Their compact and frequency-agile design, together with their high optical power and spectral purity, promise to deliver an all-in-one source for the most challenging spectroscopic applications. H…
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Four-wave-mixing-based quantum cascade laser frequency combs (QCL-FC) are a powerful photonic tool, driving a recent revolution in major molecular fingerprint regions, i.e. mid- and far-infrared domains. Their compact and frequency-agile design, together with their high optical power and spectral purity, promise to deliver an all-in-one source for the most challenging spectroscopic applications. Here, we demonstrate a metrological-grade hybrid dual comb spectrometer, combining the advantages of a THz QCL-FC with the accuracy and absolute frequency referencing provided by a free-standing, optically-rectified THz frequency comb. A proof-of-principle application to methanol molecular transitions is presented. The multi-heterodyne molecular spectra retrieved provide state-of-the-art results in line-center determination, achieving the same precision as currently available molecular databases. The devised setup provides a solid platform for a new generation of THz spectrometers, paving the way to more refined and sophisticated systems exploiting full phase control of QCL-FCs, or Doppler-free spectroscopic schemes.
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Submitted 8 April, 2020;
originally announced April 2020.
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Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
Authors:
Sebastián Castilla,
Bernat Terrés,
Marta Autore,
Leonardo Viti,
Jian Li,
Alexey Y. Nikitin,
Ioannis Vangelidis,
Kenji Watanabe,
Takashi Taniguchi,
Elefterios Lidorikis,
Miriam S. Vitiello,
Rainer Hillenbrand,
Klaas-Jan Tielrooij,
Frank H. L. Koppens
Abstract:
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that…
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Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW-per-square-root-Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization.
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Submitted 6 May, 2019;
originally announced May 2019.
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Ultrafast two-dimensional field spectroscopy of terahertz intersubband saturable absorbers
Authors:
Jürgen Raab,
Christoph Lange,
Jessica L. Boland,
Ignaz Laepple,
Martin Furthmeier,
Enrico Dardanis,
Nils Dessmann,
Lianhe Li,
Edmund H. Linfield,
A. Giles Davies,
Miriam S. Vitiello,
Rupert Huber
Abstract:
Intersubband (ISB) transitions in semiconductor multi-quantum well (MQW) structures are promising candidates for the development of saturable absorbers at terahertz (THz) frequencies. Here, we exploit amplitude and phase-resolved two-dimensional (2D) THz spectroscopy on the sub-cycle time scale to observe directly the saturation dynamics and coherent control of ISB transitions in a metal-insulator…
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Intersubband (ISB) transitions in semiconductor multi-quantum well (MQW) structures are promising candidates for the development of saturable absorbers at terahertz (THz) frequencies. Here, we exploit amplitude and phase-resolved two-dimensional (2D) THz spectroscopy on the sub-cycle time scale to observe directly the saturation dynamics and coherent control of ISB transitions in a metal-insulator MQW structure. Clear signatures of incoherent pump-probe and coherent four-wave mixing signals are recorded as a function of the peak electric field of the single-cycle THz pulses. All nonlinear signals reach a pronounced maximum for a THz electric field amplitude of 11 kV/cm and decrease for higher fields. We demonstrate that this behavior is a fingerprint of THz-driven carrier-wave Rabi flop**. A numerical solution of the Maxwell-Bloch equations reproduces our experimental findings quantitatively and traces the trajectory of the Bloch vector. This microscopic model allows us to design tailored MQW structures with optimized dynamical properties for saturable absorbers that could be used in future compact semiconductor-based single-cycle THz sources.
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Submitted 1 May, 2019;
originally announced May 2019.
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Bow-Tie Cavity for Terahertz Radiation
Authors:
Luigi Consolino,
Annamaria Campa,
Davide Mazzotti,
Miriam Serena Vitiello,
Paolo De Natale,
Saverio Bartalini
Abstract:
We report on the development, testing, and performance analysis of a bow-tie resonant cavity for terahertz (THz) radiation, injected with a continuous-wave 2.55 THz quantum cascade laser. The bow-tie cavity employs a wire-grid polarizer as input/output coupler and a pair of copper spherical mirrors coated with an unprotected 500 nm thick gold layer. The improvements with respect to previous setups…
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We report on the development, testing, and performance analysis of a bow-tie resonant cavity for terahertz (THz) radiation, injected with a continuous-wave 2.55 THz quantum cascade laser. The bow-tie cavity employs a wire-grid polarizer as input/output coupler and a pair of copper spherical mirrors coated with an unprotected 500 nm thick gold layer. The improvements with respect to previous setups have led to a measured finesse value F=123, and a quality factor Q = 5.1x10^5. The resonator performances and the relevant parameters are theoretically predicted and discussed, and a comparison among simulated and experimental spectra is given.
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Submitted 30 April, 2019;
originally announced April 2019.
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Optoelectronic devices, plasmonics and photonics with topological insulators
Authors:
Antonio Politano,
Leonardo Viti,
Miriam S. Vitiello
Abstract:
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge applica…
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Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.
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Submitted 1 April, 2019;
originally announced April 2019.
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Phase-sensitive terahertz imaging using room-temperature near-field nanodetectors
Authors:
Maria C. Giordano,
Leonardo Viti,
Oleg Mitrofanov,
Miriam S. Vitiello
Abstract:
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable map** of the THz electromagnetic fields with sub-wavelength spatial resolution, allowing intriguing scientific phenomena to be explored such as charge carrier dynamics in nanostructures and THz plasmon-polaritons in novel 2D mater…
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Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable map** of the THz electromagnetic fields with sub-wavelength spatial resolution, allowing intriguing scientific phenomena to be explored such as charge carrier dynamics in nanostructures and THz plasmon-polaritons in novel 2D materials and devices. High-resolution THz imaging, so far, has been relying predominantly on THz detection techniques that require either an ultrafast laser or a cryogenically-cooled THz detector. Here, we demonstrate coherent near-field imaging in the THz frequency range using a room-temperature nanodetector embedded in the aperture of a near-field probe, and an interferometric optical setup driven by a THz quantum cascade laser (QCL). By performing phase-sensitive imaging of strongly confined THz fields created by plasmonic focusing we demonstrate the potential of our novel architecture for high-sensitivity coherent THz imaging with sub-wavelength spatial resolution.
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Submitted 14 March, 2019;
originally announced March 2019.
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Black phosphorus nanodevices at terahertz frequencies: photodetectors and future challenges
Authors:
Leonardo Viti,
Antonio Politano,
Miriam Serena Vitiello
Abstract:
The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its trans…
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The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its transport via electrical gating and direct band-gap, that can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor (FET), a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.
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Submitted 14 March, 2019;
originally announced March 2019.
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Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging
Authors:
Oleg Mitrofanov,
Leonardo Viti,
Enrico Dardanis,
Maria Caterina Giordano,
Daniele Ercolani,
Antonio Politano,
Lucia Sorba,
Miriam S. Vitiello
Abstract:
Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally lim…
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Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally limited by the wave nature of light. Here, we conceive a novel architecture that exploits inherently strong evanescent THz field arising within the aperture to mitigate the problem of vanishing transmission. The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. The proposed novel THz near-field probes enable room-temperature sub-wavelength resolution coherent imaging with a 3.4 THz quantum cascade laser, paving the way to compact and versatile THz imaging systems and promising to bridge the gap in spatial resolution from the nanoscale to the diffraction limit.
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Submitted 14 March, 2019;
originally announced March 2019.
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Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes
Authors:
Leonardo Viti,
Antonio Politano,
Kai Zhang,
Miriam Serena Vitiello
Abstract:
Chemical do** of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A…
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Chemical do** of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A room-temperature responsivity of 3 V/W was observed, with a noise-equivalent power of 7 nWHz-1/2 at 3.4 THz, comparable with the state-of-the-art room-temperature photodetectors operating at the same frequency. Therefore, the inclusion of Se dopants in the growth process of black phosphorus crystals enables the optimization of the transport and optical performances of FETs in the far-infrared with a high potential for the development of BP-based electro-optical devices. We also demonstrate that the flake thickness can be tuned according to the target application. Specifically, thicker flakes (>80 nm) are suitable for applications in which high mobility and high speed are essential, thinner flakes (<10 nm) are more appropriate for applications requiring high on/off ratios, while THz photodetection is optimal with flakes 30-40 nm thick, due to the larger carrier density tunability.
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Submitted 6 March, 2019;
originally announced March 2019.
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Fully phase-stabilized quantum cascade laser frequency comb
Authors:
Luigi Consolino,
Malik Nafa,
Francesco Cappelli,
Katia Garrasi,
Francesco P. Mezzapesa,
Lianhe Li,
A. Giles Davies,
Edmund H. Linfield,
Miriam S. Vitiello,
Paolo De Natale,
Saverio Bartalini
Abstract:
Optical frequency comb synthesizers (FCs) [1] are laser sources covering a broad spectral range with a number of discrete, equally spaced and highly coherent frequency components, fully controlled through only two parameters: the frequency separation between adjacent modes and the carrier offset frequency. Providing a phase-coherent link between the optical and the microwave/radio-frequency region…
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Optical frequency comb synthesizers (FCs) [1] are laser sources covering a broad spectral range with a number of discrete, equally spaced and highly coherent frequency components, fully controlled through only two parameters: the frequency separation between adjacent modes and the carrier offset frequency. Providing a phase-coherent link between the optical and the microwave/radio-frequency regions [2], FCs have become groundbreaking tools for precision measurements[3,4].
Despite these inherent advantages, develo** miniaturized comb sources across the whole infrared (IR), with an independent and simultaneous control of the two comb degrees of freedom at a metrological level, has not been possible, so far. Recently, promising results have been obtained with compact sources, namely diode-laser-pumped microresonators [5,6] and quantum cascade lasers (QCL-combs) [7,8]. While both these sources rely on four-wave mixing (FWM) to generate comb frequency patterns, QCL-combs benefit from a mm-scale miniaturized footprint, combined with an ad-hoc tailoring of the spectral emission in the 3-250 μm range, by quantum engineering [9].
Here, we demonstrate full stabilization and control of the two key parameters of a QCL-comb against the primary frequency standard. Our technique, here applied to a far-IR emitter and open ended to other spectral windows, enables Hz-level narrowing of the individual comb modes, and metrological-grade tuning of their individual frequencies, which are simultaneously measured with an accuracy of 2x10^-12, limited by the frequency reference used. These fully-controlled, frequency-scalable, ultra-compact comb emitters promise to pervade an increasing number of mid- and far-IR applications, including quantum technologies, due to the quantum nature of the gain media [10].
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Submitted 5 February, 2019;
originally announced February 2019.
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High dynamic range, heterogeneous, terahertz quantum cascade lasers featuring thermally-tunable frequency comb operation over a broad current range
Authors:
Katia Garrasi,
Francesco P. Mezzapesa,
Luca Salemi,
Lianhe Li,
Luigi Consolino,
Saverio Bartalini,
Paolo De Natale,
A. Giles Davies,
Edmund H. Linfield,
Miriam S. Vitiello
Abstract:
We report on the engineering of broadband quantum cascade lasers (QCLs) emitting at Terahertz (THz) frequencies, which exploit a heterogeneous active region scheme and have a current density dynamic range (Jdr) of 3.2, significantly larger than the state of the art, over a 1.3 THz bandwidth. We demonstrate that the devised broadband lasers operate as THz optical frequency comb synthesizers in cont…
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We report on the engineering of broadband quantum cascade lasers (QCLs) emitting at Terahertz (THz) frequencies, which exploit a heterogeneous active region scheme and have a current density dynamic range (Jdr) of 3.2, significantly larger than the state of the art, over a 1.3 THz bandwidth. We demonstrate that the devised broadband lasers operate as THz optical frequency comb synthesizers in continuous wave, with a maximum optical output power of 4 mW (0.73 mW in the comb regime). Measurement of the intermode beatnote map reveals a clear dispersion-compensated frequency comb regime extending over a continuous 106 mA current range (current density dynamic range of 1.24), significantly larger than the state of the art reported under similar geometries, with a corresponding emission bandwidth of 1.05 THz ans a stable and narrow (4.15 KHz) beatnote detected with a signal-to-noise ratio of 34 dB. Analysis of the electrical and thermal beatnote tuning reveals a current-tuning coefficient ranging between 5 MHz/mA and 2.1 MHz/mA and a temperature-tuning coefficient of -4 MHz/K. The ability to tune the THz QCL combs over their full dynamic range by temperature and current paves the way for their use as powerful spectroscopy tool that can provide broad frequency coverage combined with high precision spectral accuracy.
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Submitted 25 January, 2019;
originally announced January 2019.
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Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications
Authors:
Amit Agarwal,
Miriam S. Vitiello,
Leonardo Viti,
Anna Cupolillo,
Antonio Politano
Abstract:
In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with dam** processes…
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In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with dam** processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag direction. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices.
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Submitted 1 April, 2019; v1 submitted 7 May, 2018;
originally announced May 2018.
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Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
Authors:
Leonardo Viti,
** Hu,
Dominique Coquillat,
Antonio Politano,
Christophe Consejo,
Wojciech Knap,
Miriam S. Vitiello
Abstract:
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, whic…
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Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.
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Submitted 3 May, 2018;
originally announced May 2018.
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Black-Phosphorus Terahertz Photodetectors
Authors:
Leonardo Viti,
** Hu,
Dominique Coquillat,
Wojciech Knap,
Alessandro Tredicucci,
Antonio Politano,
Miriam Serena Vitiello
Abstract:
The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Despite the impressive impact in a variety of photonic applications, the absence of energy gap has hampered its broader applicability in many optoelectronic devices. The recent advance of novel 2D materials, such as transition-metal dichalcogenide…
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The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Despite the impressive impact in a variety of photonic applications, the absence of energy gap has hampered its broader applicability in many optoelectronic devices. The recent advance of novel 2D materials, such as transition-metal dichalcogenides or atomically thin elemental materials, (e.g. silicene, germanene and phosphorene) promises a revolutionary step-change. Here we devise the first room-temperature Terahertz (THz) frequency detector exploiting few-layer phosphorene, e.g., a 10 nm thick flake of exfoliated crystalline black phosphorus (BP), as active channel of a field-effect transistor (FET). By exploiting the direct band gap of BP to fully switch between insulating and conducting states and by engineering proper antennas for efficient light harvesting, we reach detection performance comparable with commercial detection technologies, providing the first technological demonstration of a phosphorus-based active THz device.
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Submitted 2 May, 2018;
originally announced May 2018.
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THz detection with epitaxial graphene field effect transistors on silicon carbide
Authors:
F. Bianco,
D. Perenzoni,
D. Convertino,
S. L. De Bonis,
D. Spirito,
M. S. Vitiello,
C. Coletti,
M. Perenzoni,
A. Tredicucci
Abstract:
We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel. The superposition of the calculated functional depen…
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We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel. The superposition of the calculated functional dependence of both the plasmonic and thermoelectric photovoltages on the gate bias qualitatively well reproduces the measured photovoltages. Additionally, the sign reversal of the measured photovoltage demonstrates the stronger contribution of the plasmonic detection compared to the thermoelectric mechanism. Although responsivity improvement is necessary, these results demonstrate that plasmonic detectors fabricated by epitaxial graphene on silicon carbide are potential candidates for fast large area imaging of macroscopic samples.
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Submitted 2 May, 2018;
originally announced May 2018.
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The role of surface chemical reactivity in the stability of electronic nanodevices based on two-dimensional materials "beyond graphene" and topological insulators
Authors:
A. Politano,
M. S. Vitiello,
L. Viti,
D. W. Boukhvalov,
G. Chiarello
Abstract:
Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indi…
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Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indium selenide, bismuth chalcogenides and transition-metal dichalcogenides are stable in air. However, air-exposed indium selenide suffers of p-type do** due to water decomposition on Se vacancies, whereas the low mobility of charge carriers in transition-metal dichalcogenides increases the response time of nanodevices. Conversely, bismuth chalcogenides require a control of crystalline quality, which could represent a serious hurdle for up scaling.
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Submitted 2 May, 2018;
originally announced May 2018.
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Photonic Devices Based On Black-Phosphorus and Combined Hybrid 2D nanomaterials
Authors:
Leonardo Viti,
Miriam S. Vitiello
Abstract:
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a ma…
▽ More
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them black-phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap in-between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be engineered from "scratch" like transparent saturable absorbers, fast photocounductive switch and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black phosphorus-based THz photonics and discuss future perspectives of this rapidly develo** research field.
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Submitted 27 April, 2018;
originally announced April 2018.
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Probing topological insulators surface states via plasma-wave Terahertz detection
Authors:
Leonardo Viti,
Dominique Coquillat,
Antonio Politano,
Konstantin A. Kokh,
Ziya S. Aliev,
Mahammad B. Babanly,
Oleg E. Tereshchenko,
Wojciech Knap,
Evgueni V. Chulkov,
Miriam S. Vitiello
Abstract:
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone…
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Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.
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Submitted 27 April, 2018;
originally announced April 2018.
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Unveiling spectral purity and tunability of terahertz quantum cascade laser sources based on intra-cavity difference frequency generation
Authors:
Luigi Consolino,
Seungyong Jung,
Annamaria Campa,
Michele De Regis,
Shovon Pal,
Jae Hyun Kim,
Kazuue Fujita,
Akio Ito,
Masahiro Hitaka,
Saverio Bartalini,
Paolo De Natale,
Mikhail A. Belkin,
Miriam Serena Vitiello
Abstract:
Terahertz sources based on intra-cavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically-pumped semiconductor sources capable of operating at room-temperature (RT) across the 1-6 THz range. Despite tremendous progress in power output, that now exceeds 1mW in pulsed and 10 μW in continuous-wave regime at…
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Terahertz sources based on intra-cavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically-pumped semiconductor sources capable of operating at room-temperature (RT) across the 1-6 THz range. Despite tremendous progress in power output, that now exceeds 1mW in pulsed and 10 μW in continuous-wave regime at room-temperature, knowledge of the major figure of merits of these devices for high precision spectroscopy, such as spectral purity and absolute frequency tunability, is still lacking. Here, by exploiting a metrological grade system comprising a terahertz frequency comb synthesizer, we measure, for the first time, the free-running emission linewidth (LW), the tuning characteristics, and the absolute frequency of individual emission lines of these sources with an uncertainty of 4 x 10-10. The unveiled emission LW (400 kHz at 1ms integration time) indicates that DFG-QCLs are well suited to operate as local oscillators and to be used for a variety of metrological, spectroscopic, communication, and imaging applications requiring narrow-linewidth THz sources.
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Submitted 27 April, 2018;
originally announced April 2018.
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Unusually strong lateral interaction in the CO overlayer in phosphorene-based systems
Authors:
Antonio Politano,
Miriam Serena Vitiello,
Leonardo Viti,
** Hu,
Zhiqiang Mao,
Jiang Wei,
Gennaro Chiarello,
Danil W. Boukhvalov
Abstract:
By means of vibrational spectroscopy and density functional theory (DFT), we investigate CO adsorption on phosphorene-based systems. We find stable CO adsorption at room temperature on both phosphorene and bulk black phosphorus. The adsorption energy and vibrational spectrum have been calculated for several possible configurations of the CO overlayer. We find that the vibrational spectrum is chara…
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By means of vibrational spectroscopy and density functional theory (DFT), we investigate CO adsorption on phosphorene-based systems. We find stable CO adsorption at room temperature on both phosphorene and bulk black phosphorus. The adsorption energy and vibrational spectrum have been calculated for several possible configurations of the CO overlayer. We find that the vibrational spectrum is characterized by two different C-O stretching energies. The experimental data are in good agreement with the prediction of the DFT model and unveil the unusual C-O vibrational band at 165-180 meV, activated by the lateral interactions in the CO overlayer.
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Submitted 27 April, 2018;
originally announced April 2018.
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Femtosecond photo-switching of interface polaritons in black phosphorus heterostructures
Authors:
Markus A. Huber,
Fabian Mooshammer,
Markus Plankl,
Leonardo Viti,
Fabian Sandner,
Lukas Z. Kastner,
Tobias Frank,
Jaroslav Fabian,
Miriam S. Vitiello,
Tyler L. Cocker,
Rupert Huber
Abstract:
The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows for plasmon polaritons to be continuously tune…
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The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows for plasmon polaritons to be continuously tuned. Here, we introduce black phosphorus (BP) as a promising new material in surface polaritonics that features key advantages for ultrafast switching. Unlike graphene, BP is a van der Waals bonded semiconductor, which enables high-contrast interband excitation of electron-hole pairs by ultrashort near-infrared (near-IR) pulses. We design a SiO$_2$/BP/SiO$_2$ heterostructure in which the surface phonon modes of the SiO$_2$ layers hybridize with surface plasmon modes in BP that can be activated by photo-induced interband excitation. Within the Reststrahlen band of SiO$_2$, the hybrid interface polariton assumes surface-phonon-like properties, with a well-defined frequency and momentum and excellent coherence. During the lifetime of the photogenerated electron-hole plasma, coherent polariton waves can be launched by a broadband mid-IR pulse coupled to the tip of a scattering-type scanning near-field optical microscopy (s-SNOM) setup. The scattered radiation allows us to trace the new hybrid mode in time, energy, and space. We find that the surface mode can be activated within ~50 fs and disappears within 5 ps, as the electron-hole pairs in BP recombine. The excellent switching contrast and switching speed, the coherence properties, and the constant wavelength of this transient mode make it a promising candidate for ultrafast nanophotonic devices.
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Submitted 28 September, 2017;
originally announced September 2017.
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Split ring resonator resonance assisted terahertz antennas
Authors:
Hossam Galal,
Leonardo Viti,
Miriam S. Vitiello
Abstract:
We report on the computational development of novel architectures of low impedance broadband antennas, for efficient detection of Terahertz (THz) frequency beams. The conceived Split Ring Resonator Resonance Assisted (SRR RA) antennas are based on both a capacitive and inductive scheme, exploiting a 200 Ohm and 400 Ohm impedance, respectively. Moreover, the impedance is tunable by varying the coup…
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We report on the computational development of novel architectures of low impedance broadband antennas, for efficient detection of Terahertz (THz) frequency beams. The conceived Split Ring Resonator Resonance Assisted (SRR RA) antennas are based on both a capacitive and inductive scheme, exploiting a 200 Ohm and 400 Ohm impedance, respectively. Moreover, the impedance is tunable by varying the coupling parameters in the exploited geometry, allowing for better matching with the detector circuit for maximum power extraction. Our simulation results have been obtained by assuming a 1.5 THz operation frequency.
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Submitted 27 September, 2017; v1 submitted 5 August, 2016;
originally announced August 2016.
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Distributed feedback terahertz frequency quantum cascade lasers with dual periodicity gratings
Authors:
F. Castellano,
S. Zanotto,
L. H. Li,
A. Pitanti,
A. Tredicucci,
E. H. Linfield,
A. G. Davies,
M. S. Vitiello
Abstract:
We have developed terahertz frequency quantum cascade lasers that exploit a double-periodicity distributed feedback grating to control the emission frequency and the output beam direction independently. The spatial refractive index modulation of the gratings necessary to provide optical feedback at a fixed frequency and, simultaneously, a far-field emission pattern centered at controlled angles, w…
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We have developed terahertz frequency quantum cascade lasers that exploit a double-periodicity distributed feedback grating to control the emission frequency and the output beam direction independently. The spatial refractive index modulation of the gratings necessary to provide optical feedback at a fixed frequency and, simultaneously, a far-field emission pattern centered at controlled angles, was designed through use of an appropriate wavevector scattering model. Single mode THz emission at angles tuned by design between 0° and 50° was realized, leading to an original phase-matching approach, lithographically independent, for highly collimated THz QCLs.
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Submitted 30 May, 2016;
originally announced May 2016.
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Perfect energy-feeding into strongly coupled systems and interferometric control of polariton absorption
Authors:
Simone Zanotto,
Francesco P. Mezzapesa,
Federica Bianco,
Giorgio Biasiol,
Lorenzo Baldacci,
Miriam Serena Vitiello,
Lucia Sorba,
Raffaele Colombelli,
Alessandro Tredicucci
Abstract:
The ability to feed energy into a system, or - equivalently - to drive that system with an external input is a fundamental aspect of light-matter interaction. The key concept in many photonic applications is the "critical coupling" condition: at criticality, all the energy fed to the system via an input channel is dissipated within the system itself. Although this idea was crucial to enhance the e…
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The ability to feed energy into a system, or - equivalently - to drive that system with an external input is a fundamental aspect of light-matter interaction. The key concept in many photonic applications is the "critical coupling" condition: at criticality, all the energy fed to the system via an input channel is dissipated within the system itself. Although this idea was crucial to enhance the efficiency of many devices, it was never considered in the context of systems operating in a non-perturbative regime. In this so-called strong coupling regime, the matter and light degrees of freedom are in fact mixed into dressed states, leading to new eigenstates called polaritons. Here we demonstrate that the strong coupling regime and the critical coupling condition can indeed coexist; in this situation, which we term strong critical coupling, all the incoming energy is converted into polaritons. A semiclassical theory - equivalently applicable to acoustics or mechanics - reveals that the strong critical coupling corresponds to a special curve in the phase diagram of the coupled light-matter oscillators. In the more general case of a system radiating via two scattering ports, the phenomenology displayed is that of coherent perfect absorption (CPA), which is then naturally understood and described in the framework of critical coupling. Most importantly, we experimentally verify polaritonic CPA in a semiconductor-based intersubband-polariton photonic-crystal membrane resonator. This result opens new avenues in the exploration of polariton physics, making it possible to control the pum** efficiency of a system almost independently of its Rabi energy, i.e., of the energy exchange rate between the electromagnetic field and the material transition.
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Submitted 28 May, 2016;
originally announced May 2016.
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Ultrafast single-nanowire multi-terahertz spectroscopy with sub-cycle temporal resolution
Authors:
M. Eisele,
T. L. Cocker,
M. A. Huber,
M. Plankl,
L. Viti,
D. Ercolani,
L. Sorba,
M. S. Vitiello,
R. Huber
Abstract:
Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation…
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Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation cycle of light. However, conventional THz spectroscopy is intrinsically restricted to ensemble measurements by the diffraction limit. As a result, it measures dielectric functions averaged over the size, structure, orientation and density of nanoparticles, nanocrystals or nanodomains. Here, we extend ultrabroadband time-resolved THz spectroscopy (20 - 50 THz) to the sub-nanoparticle scale (10 nm) by combining sub-cycle, field-resolved detection (10 fs) with scattering-type near-field scanning optical microscopy (s-NSOM). We trace the time-dependent dielectric function at the surface of a single photoexcited InAs nanowire in all three spatial dimensions and reveal the ultrafast ($<$50 fs) formation of a local carrier depletion layer.
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Submitted 14 April, 2016;
originally announced April 2016.
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High performance bilayer-graphene Terahertz detectors
Authors:
Davide Spirito,
Dominique Coquillat,
Sergio L. De Bonis,
Antonio Lombardo,
Matteo Bruna,
Andrea C. Ferrari,
Vittorio Pellegrini,
Alessandro Tredicucci,
Wojciech Knap,
Miriam S. Vitiello
Abstract:
We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this tec…
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We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
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Submitted 13 December, 2013;
originally announced December 2013.
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Photocurrent-based detection of Terahertz radiation in graphene
Authors:
Andrea Tomadin,
Alessandro Tredicucci,
Vittorio Pellegrini,
Miriam S. Vitiello,
Marco Polini
Abstract:
Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. This scheme has already been experimentally studied in a graphene FET [L. Vicarelli et al., Nature Mat.…
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Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. This scheme has already been experimentally studied in a graphene FET [L. Vicarelli et al., Nature Mat. 11, 865 (2012)]. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The rectified current features a peculiar change of sign when the frequency of the incoming radiation matches an even multiple of the fundamental frequency of plasma waves in the FET channel. The noise equivalent power per unit bandwidth of our device is shown to be much smaller than that of a Dyakonov-Shur detector in a wide spectral range.
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Submitted 2 October, 2013;
originally announced October 2013.
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Graphene field effect transistors as room-temperature Terahertz detectors
Authors:
L. Vicarelli,
M. S. Vitiello,
D. Coquillat,
A. Lombardo,
A. C. Ferrari,
W. Knap,
M. Polini,
V. Pellegrini,
A. Tredicucci
Abstract:
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the…
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The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.
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Submitted 14 March, 2012;
originally announced March 2012.
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Comparative analysis of resonant phonon THz quantum cascade lasers
Authors:
Christian Jirauschek,
Giuseppe Scarpa,
Paolo Lugli,
Miriam S. Vitiello,
Gaetano Scamarcio
Abstract:
We present a comparative analysis of a set of GaAs-based THz quantum cascade lasers, based on longitudinal-optical phonon scattering depopulation, by using an ensemble Monte Carlo simulation, including both carrier-carrier and carrier-phonon scattering. The simulation shows that the parasitic injection into the states below the upper laser level limits the injection efficiency and thus the device…
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We present a comparative analysis of a set of GaAs-based THz quantum cascade lasers, based on longitudinal-optical phonon scattering depopulation, by using an ensemble Monte Carlo simulation, including both carrier-carrier and carrier-phonon scattering. The simulation shows that the parasitic injection into the states below the upper laser level limits the injection efficiency and thus the device performance at the lasing threshold. Additional detrimental effects playing an important role are identified. The simulation results are in reasonable agreement with the experimental findings.
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Submitted 14 March, 2011; v1 submitted 4 November, 2009;
originally announced November 2009.