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Microheater hotspot engineering for repeatable multi-level switching in foundry-processed phase change silicon photonics
Authors:
Hongyi Sun,
Chuanyu Lian,
Francis Vásquez-Aza,
Sadra Rahimi Kari,
Yi-Siou Huang,
Alessandro Restelli,
Steven A. Vitale,
Ichiro Takeuchi,
Juejun Hu,
Nathan Youngblood,
Georges Pavlidis,
Carlos A. Ríos Ocampo
Abstract:
Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation…
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Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation process to achieve partial crystallization with low demonstrated repeatability and cyclability. Here, we re-engineer waveguide-integrated microheaters to achieve precise spatial control of the temperature profile (i.e., hotspot) and, thus, switch deterministic areas of an embedded phase change material cell. We experimentally demonstrate this concept using a variety of foundry-processed doped-silicon microheaters on a silicon-on-insulator platform to trigger multi-step amorphization and reversible switching of Sb$_{2}$Se$_{3}$ and Ge$_{2}$Sb$_{2}$Se$_{4}$Te alloys. We further characterize the response of our microheaters using Transient Thermoreflectance Imaging. Our approach combines the deterministic control resulting from a spatially resolved glassy-crystalline distribution with the scalability of electro-thermal switching devices, thus paving the way to reliable multi-level switching towards robust reprogrammable phase-change photonic devices for analog processing and computing.
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Submitted 15 June, 2024;
originally announced July 2024.
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Time-resolved temperature map** leveraging the strong thermo-optic effect in phase-change devices
Authors:
Nicholas A. Nobile,
John R. Erickson,
Carlos Ríos,
Yifei Zhang,
Juejun Hu,
Steven A. Vitale,
Feng Xiong,
Nathan Youngblood
Abstract:
Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases, a significant challenge for large-scale integration. Here,…
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Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases, a significant challenge for large-scale integration. Here, we present an experimental technique which leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a non-invasive method for rapid characterization of electrically programmable phase-change devices.
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Submitted 14 October, 2022;
originally announced October 2022.
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Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
Authors:
Carlos Ríos,
Qingyang Du,
Yifei Zhang,
Cosmin-Constantin Popescu,
Mikhail Y. Shalaginov,
Paul Miller,
Christopher Roberts,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Steven A. Vitale,
Juejun Hu
Abstract:
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state…
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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $π$/$μ$m and a low insertion loss of 0.3 dB/$π$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter.
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Submitted 21 March, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene
Authors:
Carlos Ríos,
Yifei Zhang,
Mikhail Shalaginov,
Skylar Deckoff-Jones,
Haozhe Wang,
Sensong An,
Hualiang Zhang,
Myungkoo Kang,
Kathleen A. Richardson,
Christopher Roberts,
Jeffrey B. Chou,
Vladimir Liberman,
Steven A. Vitale,
**g Kong,
Tian Gu,
Juejun Hu
Abstract:
Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfigurat…
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Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$π$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.
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Submitted 15 July, 2020;
originally announced July 2020.
