Showing 51–62 of 62 results for author: Vissers, M R

Measuring a topological transition in an artificial spin 1/2 system

Authors: M. D. Schroer, M. H. Kolodrubetz, W. F. Kindel, M. Sandberg, J. Gao, M. R. Vissers, D. P. Pappas, Anatoli Polkovnikov, K. W. Lehnert

Abstract: We present measurements of a topological property, the Chern number ($C_\mathrm{1}$), of a closed manifold in the space of two-level system Hamiltonians, where the two-level system is formed from a superconducting qubit. We manipulate the parameters of the Hamiltonian of the superconducting qubit along paths in the manifold and extract $C_\mathrm{1}$ from the nonadiabitic response of the qubit. By… ▽ More We present measurements of a topological property, the Chern number ($C_\mathrm{1}$), of a closed manifold in the space of two-level system Hamiltonians, where the two-level system is formed from a superconducting qubit. We manipulate the parameters of the Hamiltonian of the superconducting qubit along paths in the manifold and extract $C_\mathrm{1}$ from the nonadiabitic response of the qubit. By adjusting the manifold such that a degeneracy in the Hamiltonian passes from inside to outside the manifold, we observe a topological transition $C_\mathrm{1} = 1 \rightarrow 0$. Our measurement of $C_\mathrm{1}$ is quantized to within 2 percent on either side of the transition. △ Less

Submitted 6 June, 2014; originally announced June 2014.

Comments: 5 pages, 3 figures

Ultra-Broadband Microwave Frequency-Comb Generation in Superconducting Resonators

Authors: R. P. Erickson, M. R. Vissers, M. Sandberg, S. R. Jefferts, D. P. Pappas

Abstract: We have generated frequency combs spanning 0.5 to 20 GHz in superconducting half wave resonators at T=3 K. Thin films of niobium-titanium nitride enabled this development due to their low loss, high nonlinearity, low frequency dispersion, and high critical temperature. The combs nucleate as sidebands around multiples of the pump frequency. Selection rules for the allowed frequency emission are cal… ▽ More We have generated frequency combs spanning 0.5 to 20 GHz in superconducting half wave resonators at T=3 K. Thin films of niobium-titanium nitride enabled this development due to their low loss, high nonlinearity, low frequency dispersion, and high critical temperature. The combs nucleate as sidebands around multiples of the pump frequency. Selection rules for the allowed frequency emission are calculated using perturbation theory and the measured spectrum is shown to agree with the theory. The sideband spacing is measured to be accurate to 1 part in 10 million. The sidebands coalesce into a continuous comb structure that has been observed to cover at least 6 octaves in frequency. △ Less

Submitted 2 July, 2014; v1 submitted 28 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. Lett. 113, 187002 (2014)

Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

Authors: V. B. Verma, A. E. Lita, M. R. Vissers, F. Marsili, D. P. Pappas, R. P. Mirin, S. W. Nam

Abstract: We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficien… ▽ More We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficiencies (SDE) exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. △ Less

Submitted 18 February, 2014; originally announced February 2014.

Improved superconducting qubit coherence using titanium nitride

Authors: J. Chang, M. R. Vissers, A. D. Corcoles, M. Sandberg, J. Gao, David W. Abraham, Jerry M. Chow, Jay M. Gambetta, M. B. Rothwell, G. A. Keefe, Matthias Steffen, D. P. Pappas

Abstract: We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface lo… ▽ More We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface losses from two-level system (TLS) defects residing at or near interfaces. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators which is inconsistent with the predicted TLS model. △ Less

Submitted 17 March, 2013; originally announced March 2013.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 103, 012602 (2013)

Long-lived, radiation-suppressed superconducting quantum bit in a planar geometry

Authors: Martin Sandberg, Michael R. Vissers, Tom Ohki, Jiansong Gao, Jose Aumentado, Martin Weides, David P. Pappas

Abstract: We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit rela… ▽ More We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit relaxation and coherence times ($T_1$ and $T_2$) of 11.7 $\pm$ 0.2 $μ$s and 8.7 $\pm$ 0.3 $μ$s, respectively. Calculations show that the proximity of the superconducting plane suppresses the otherwise high radiation loss of the qubit. A significant increase in $T_1$ is projected for a reduced qubit-to-superconducting plane separation. △ Less

Submitted 8 November, 2012; originally announced November 2012.

Comments: 3 pages, 3 figures

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

Authors: Michael R. Vissers, Jiansong Gao, Martin Sandberg, Shannon M. Duff, David S. Wisbey, Kent D. Irwin, David P. Pappas

Abstract: We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilay… ▽ More We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

Authors: Michael R. Vissers, Jiansong Gao, Jeffrey S. Kline, Martin Sandberg, Martin P. Weides, David S. Wisbey, David P. Pappas

Abstract: The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric… ▽ More The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices. △ Less

Submitted 20 September, 2012; originally announced September 2012.

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

Authors: Martin Sandberg, Michael R. Vissers, Jeffrey S. Kline, Martin Weides, Jiansong Gao, David S. Wisbey, David P. Pappas

Abstract: We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples show… ▽ More We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators △ Less

Submitted 14 May, 2012; originally announced May 2012.

Journal ref: Appl. Phys. Lett. 100, 262605 (2012)

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

Authors: Michael R. Vissers, Martin P. Weides, Jeffrey S. Kline, Martin O. Sandberg, David P. Pappas

Abstract: We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as… ▽ More We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature. △ Less

Submitted 22 March, 2012; originally announced March 2012.

Comments: 10 pages, 5 figures

Coherence in a transmon qubit with epitaxial tunnel junctions

Authors: Martin P. Weides, Jeffrey S. Kline, Michael R. Vissers, Martin O. Sandberg, David S. Wisbey, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

Abstract: We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-l… ▽ More We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements. △ Less

Submitted 9 December, 2011; v1 submitted 21 November, 2011; originally announced November 2011.

Journal ref: Appl. Phys. Lett. 99, 262502 (2011)

Sub-micrometer epitaxial Josephson junctions for quantum circuits

Authors: Jeffrey S. Kline, Michael R. Vissers, Fabio C. S. da Silva, David S. Wisbey, Martin Weides, Terence J. Weir, Benjamin Turek, Danielle A. Braje, William D. Oliver, Yoni Shalibo, Nadav Katz, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

Abstract: We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top e… ▽ More We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance. △ Less

Submitted 22 November, 2011; v1 submitted 8 August, 2011; originally announced August 2011.

Journal ref: Supercond. Sci. Technol. 25 (2012) 025005

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Authors: Michael R. Vissers, Jiansong Gao, David S. Wisbey, Dustin A. Hite, Chang C. Tsuei, Antonio D. Corcoles, Matthias Steffen, David P. Pappas

Abstract: Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) hig… ▽ More Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: Submitted to APL July 2010