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Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces
Authors:
Kohei Fukuma,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Satoru Tanaka
Abstract:
Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former one…
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Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the $[1\bar{1}00]$ direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}0n)$ macrofacets covered with graphene, as follows. A carpet-like carbon layer grows on the surface, covering both the macroterraces and macrofacets; it forms $(6\sqrt{3} \times 6\sqrt{3})$ buffer layer on the former ones, whereas its partial periodic bonding with the SiC steps on the latter ones generates a pseudo-graphene nanoribbon (pseudo-GNR) array. The nanoribbons have a width of 2 nm and are aligned in the $[1\bar{2}10]$ direction with a spatial periodicity of 3.3 nm. Here, the Raman spectroscopy analysis of the pseudo-GNR array showed the absence of the 2D peak and the polarization dependence of the $G$ and $D$ peaks, which is typical of the armchair edge nanoribbon.
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Submitted 25 October, 2021;
originally announced October 2021.
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Twisted bilayer graphene fabricated by direct bonding in a high vacuum
Authors:
Hitoshi Imamura,
Anton Visikovskiy,
Ryosuke Uotani,
Takashi Kajiwara,
Hiroshi Ando,
Takushi Iimori,
Kota Iwata,
Toshio Miyamachi,
Kan Nakatsuji,
Kazuhiko Mase,
Tetsuroh Shirasawa,
Fumio Komori,
Satoru Tanaka
Abstract:
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to…
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Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
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Submitted 9 May, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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Computational study of heavy group IV elements (Ge, Sn, Pb) triangular lattice atomic layers on SiC(0001) surface
Authors:
Anton Visikovskiy,
Shingo Hayashi,
Takashi Kajiwara,
Fumio Komori,
Koichiro Yaji,
Satoru Tanaka
Abstract:
Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) calculations with/without SOC we investigate the variation of group IV heavy elements overlayers, namely dense triangular lattice atomic layers (TLAL) on the surface of SiC(0001) semiconductor. The possibility of such laye…
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Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) calculations with/without SOC we investigate the variation of group IV heavy elements overlayers, namely dense triangular lattice atomic layers (TLAL) on the surface of SiC(0001) semiconductor. The possibility of such layers formation and their properties have not been addressed before. Here we show, that these layers may indeed be stable and, owing to peculiar bonding configuration, exhibit robust Dirac-like energy bands originating from $p_x+p_y$ orbitals and localized mostly within the layer, and $p_z$ band localized outside the layer and interacting with SiC substrate. We found that a $T_1$ adsorption site is most favorable for such TLAL structure and this results in an unusual SOC-induced spin polarization of the states around $\bar{K}$ points of Brillouin zone, namely the coexistence of Rashba- and Zeeman-like spin polarization of different states. We explain this phenomena in terms of symmetry of partial electronic density rather than symmetry of atomic structure.
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Submitted 4 September, 2018;
originally announced September 2018.
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Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
Authors:
Takashi Kajiwara,
Yuzuru Nakamori,
Anton Visikovskiy,
Takushi Iimori,
Fumio Komori,
Kan Nakatsuji,
Kazuhiko Mase,
Satoru Tanaka
Abstract:
We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate,…
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We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV.
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Submitted 16 October, 2012;
originally announced October 2012.
