Showing 1–15 of 15 results for author: Vines, L

Isolation of Single Donors in ZnO

Authors: Ethan R. Hansen, Vasileios Niaouris, Bethany E. Matthews, Christian Zimmermann, Xingyi Wang, Roman Kolodka, Lasse Vines, Steven R. Spurgeon, Kai-Mei C. Fu

Abstract: The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The… ▽ More The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors. △ Less

Submitted 17 January, 2024; v1 submitted 9 October, 2023; originally announced October 2023.

Comments: E. R. Hansen and V. Niaouris contributed equally to this work. 15 pages, 13 figures

Universal radiation tolerant semiconductor

Authors: Alexander Azarov, Javier García Fernández, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Øystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov

Abstract: Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci… ▽ More Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors. △ Less

Submitted 14 August, 2023; v1 submitted 23 March, 2023; originally announced March 2023.

Journal ref: Nature Communications 14, 4855 (2023)

Properties of donor qubits in ZnO formed by indium ion implantation

Authors: Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D'Ambrosia, Lasse Vines, Edward S. Bielejec, Kai-Mei C. Fu

Abstract: Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c… ▽ More Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory. △ Less

Submitted 14 June, 2023; v1 submitted 10 December, 2022; originally announced December 2022.

Journal ref: PhysRevApplied. Vol. 19, Iss. 5, 054090, 2023

Predicting Solid State Material Platforms for Quantum Technologies

Authors: Oliver Lerstøl Hebnes, Marianne Etzelmüller Bathen, Øyvind Sigmundson Schøyen, Sebastian G. Winther Larsen, Lasse Vines, Morten Hjorth-Jensen

Abstract: Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searching these databases to find promising candidate materials for quantum technology applications is a major challenge. Therefore, we have developed a fr… ▽ More Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searching these databases to find promising candidate materials for quantum technology applications is a major challenge. Therefore, we have developed a framework for the automated discovery of semiconductor host platforms for QT using material informatics and machine learning methods, resulting in a dataset consisting of over $25.000$ materials and nearly $5000$ physics-informed features. Three approaches were devised, named the Ferrenti, extended Ferrenti and the empirical approach, to label data for the supervised machine learning (ML) methods logistic regression, decision trees, random forests and gradient boosting. We find that of the three, the empirical approach relying exclusively on findings from the literature predicted substantially fewer candidates than the other two approaches with a clear distinction between suitable and unsuitable candidates when comparing the two largest eigenvalues in the covariance matrix. In contrast to expectations from the literature and that found for the Ferrenti and extended Ferrenti approaches focusing on band gap and ionic character, the ML methods from the empirical approach highlighted features related to symmetry and crystal structure, including bond length, orientation and radial distribution, as influential when predicting a material as suitable for QT. All three approaches and all four ML methods agreed on a subset of $47$ eligible candidates %(to a probability of $>50 \ \%$) of $8$ elemental, $29$ binary, and $10$ tertiary compounds, and provide a basis for further material explorations towards quantum technology. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Comments: 23 pages, 18 figures

Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience

Authors: Alireza Assar, Filipe Martinho, Jes Larsen, Nishant Saini, Denver Shearer, Marcos V. Moro, Fredrik Stulen, Sigbjørn Grini, Sara Engberg, Eugen Stamate, Jørgen Schou, Lasse Vines, Stela Canulescu, Charlotte Platzer-Björkman, Ole Hansen

Abstract: Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off betwee… ▽ More Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe) and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 °C, we show that increasing the heavily-doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by one order of magnitude, with final lifetimes above 500 us uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Comments: 31 pages, 13 figures

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Authors: Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov, Lasse Vines

Abstract: Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct ident… ▽ More Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct identification of C$_{i}$-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4H-SiC, to charge state transitions of the C$_{i}$ defect in different configurations. In this work, we have introduced excess carbon into low-doped n-type 150 μm thick 4$H$-SiC epilayers by thermal annealing, with a pyrolyzed carbon cap on the sample surface acting as a carbon source. Because the layers exhibited initially low concentrations of carbon vacancies ([V$_{C}$] = 10$^{11}$ cm$^{-3}$), this enabled us to study the case of complete V$_{C}$ annihilation, and formation of defects due to excess carbon, i.e. carbon interstitials C$_{i}$ and their higher-order complexes. We report on the occurrence of several new levels upon C injection which are likely C$_{i}$-related. Their properties are different from those found for the M center, which points towards a different structural identity of the detected levels. This suggests the existence of a rich variety of C$_{i}$-related defects. The study will also help generating new insights into the microscopic process of V$_{C}$ annihilation during carbon injection processes. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Strain modulation of Si vacancy emission from SiC micro- and nanoparticles

Authors: G. C. Vásquez, M. E. Bathen, A. Galeckas, C. Bazioti, K. M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A. M. Moe, A. Yu. Kuznetsov, L. Vines

Abstract: Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence… ▽ More Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (V$_{\textrm{Si}}$) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding V$_{\textrm{Si}}$ qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies, while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix. △ Less

Submitted 5 November, 2020; originally announced November 2020.

Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier

Authors: Alireza Hajijafarassar, Filipe Martinho, Fredrik Stulen, Sigbjørn Grini, Simón López-Mariño, Moises Espíndola-Rodríguez, Max Döbeli, Stela Canulescu, Eugen Stamate, Mungunshagai Gansukh, Sara Engberg, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

Abstract: Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage… ▽ More Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Persistent double layer formation in kesterite solar cells: a critical review

Authors: Filipe Martinho, Simon Lopez-Marino, Moises Espíndola-Rodríguez, Alireza Hajijafarassar, Fredrik Stulen, Sigbjørn Grini, Max Döbeli, Mungunshagai Gansukh, Sara Engberg, Eugen Stamate, Lasse Vines, Jørgen Schou, Ole Hansen, Stela Canulescu

Abstract: In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate… ▽ More In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition and optoelectronic properties, and complement the results with a statistical dataset of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 nm to 300 nm, we show that the double layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the known case of ultrathin CIGS solar cells. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double layer formation, but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases, in a self-regulating process akin to the Kirkendall effect. We comment on the generality of the mechanism proposed, comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide and oxide-based targets. Although the double layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 40 pages, 11 figures

Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS

Authors: Filipe Martinho, Alireza Hajijafarassar, Simón Lopez-Marino, Moises Espíndola-Rodríguez, Sara Engberg, Mungunshagai Gansukh, Fredrik Stulen, Sigbjørn Grini, Stela Canulescu, Eugen Stamate, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

Abstract: The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which t… ▽ More The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 31 pages, 10 Figures

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Authors: Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas, Lasse Vines

Abstract: The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000°C. The model proposes the EH4 and EH5 traps fr… ▽ More The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000°C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400°C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors. △ Less

Submitted 8 July, 2020; originally announced July 2020.

High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates

Authors: D. Gogova, V. S. Olsen, C. Bazioti, I. -H. Lee, Ø. Prytz, L. Vines, A. Yu. Kuznetsov

Abstract: Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmission electron microscopy (TEM) measurements. TEM verified that the layers are single-crystalline of hexagonal phase, exhibiting epitaxial relationship… ▽ More Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmission electron microscopy (TEM) measurements. TEM verified that the layers are single-crystalline of hexagonal phase, exhibiting epitaxial relationship with the substrate. The screw-type threading dislocations originating from the interface were identified as dominant extended defects. More specifically, we report a pioneering measurement of the dislocation density in this material. Even though, there is no literature data for direct comparison, such values are typical of heteroepitaxial growth of III-nitride layers without applying defect density reduction strategies. The films demonstrated a record electron mobility. The optical bandgaps of 1.86 eV and 1.72 eV were determined for the stoichiometric and Zn-rich samples, respectively. As such, we conclude that ZnSnN2 is an earth-abundant, environmentally-friendly semiconductor and is a promising candidate for cost efficient components in electronics and photonics. △ Less

Submitted 19 June, 2020; originally announced June 2020.

Comments: 20 pages, 4 figures, 1 Table

Negative-U and polaronic behavior of the Zn-O divacancy in ZnO

Authors: Y. K. Frodason, K. M. Johansen, A. Alkauskas, L. Vines

Abstract: Hybrid functional calculations reveal the Zn-O divacancy in ZnO, consisting of adjacent Zn and O vacancies, as an electrically active defect exhibiting charge states ranging from $2+$ to $2-$ within the band gap. Notably, the divacancy retains key features of the monovacancies, namely the negative-\textit{U} behavior of the O vacancy, and the polaronic nature of the Zn vacancy. The thermodynamic c… ▽ More Hybrid functional calculations reveal the Zn-O divacancy in ZnO, consisting of adjacent Zn and O vacancies, as an electrically active defect exhibiting charge states ranging from $2+$ to $2-$ within the band gap. Notably, the divacancy retains key features of the monovacancies, namely the negative-\textit{U} behavior of the O vacancy, and the polaronic nature of the Zn vacancy. The thermodynamic charge-state transition levels associated with the negative-\textit{U} behavior $\varepsilon$($0$/$2-$), $\varepsilon$($-$/$2-$) and $\varepsilon$($0$/$-$) are predicted to occur at 0.22, 0.42 and 0.02 eV below the conduction band minimum, respectively, resulting in \textit{U} = $-$0.40 eV. These transition levels are moved closer to the conduction band and the magnitude of \textit{U} is lowered compared to the values for the O vacancy. Further, the interaction with hydrogen has been explored, where it is shown that the divacancy can accommodate up to three H atoms. The first two H atoms prefer to terminate O dangling bonds at the Zn vacancy, while the geometrical location of the third depends on the Fermi-level position. The calculated electrical properties of the divacancy are in excellent agreement with those reported for the E4 center observed by deep-level transient spectroscopy, challenging the O vacancy as a candidate for this level. △ Less

Submitted 15 May, 2019; originally announced May 2019.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 99, 174106 (2019)

Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence

Authors: S. Prucnal, K. Gao, I. Skorupa, L. Rebohle, L. Vines, H. Schmidt, M. Khalid, Y. Wang, E. Weschke, W. Skorupa, J. Grenzer, R. Huebner, M. Helm, S. Zhou

Abstract: The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. Th… ▽ More The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a do** by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation. △ Less

Submitted 30 October, 2015; originally announced October 2015.

Comments: 24 pages, 7 figures, accepted at Phys. Rev. B 2015

Journal ref: Phys. Rev. B, 92, 224407 (2015)

Composition and structure of Pd nanoclusters in SiO$_x$ thin film

Authors: Annett Thøgersen, Jeyanthinath Mayandi, Lasse Vines, Martin F. Sunding, Arne Olsen, Spyros Diplas, Masanori Mitome, Yoshio Bando

Abstract: The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was… ▽ More The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO$_2$. △ Less

Submitted 28 September, 2012; originally announced October 2012.

Journal ref: J. Appl. Phys. 109, 084329 (2011)