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Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications
Authors:
Grégoire Magagnin,
Jordan Bouaziz,
Martine Le Berre,
Sara Gonzalez,
Damien Deleruyelle,
Bertrand Vilquin
Abstract:
Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency (…
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Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency ($η$). This work assesses the potential of high-performance $Hf_{1-x}Zr_{x}O_2$ thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and $η$ are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample ($95 J/cm^3$), but $η$ is ridiculously small ($\approx$ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE $ZrO_2$ thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as $52 J/cm^3$ at 3.5 MV/cm. This value can be further increased up to $84 J/cm^3$ at a higher electrical field (4.0 MV/cm), with an $η$ of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization.
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Submitted 15 May, 2024;
originally announced May 2024.
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Full field electron spectromicroscopy applied to ferroelectric materials
Authors:
N. Barrett,
J. E. Rault,
J. L. Wang,
C. Mathieu,
A. Locatelli,
T. O. Mentes,
M. A. Nino,
S. Fusil,
M. Bibes,
A. Barthelemy,
D. Sando,
W. Ren,
S. Prosandeev,
L. Bellaiche,
B. Vilquin,
A. Petraru,
I. P. Krug,
C. M. Schneider
Abstract:
The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both P…
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The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical map**, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented.
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Submitted 13 June, 2018;
originally announced June 2018.
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Influence of the ferroelectric polarization on the electronic structure of BaTiO3 thin films
Authors:
N. Barrett,
J. Rault,
I. Krug,
B. Vilquin,
G. Niu,
B. Gautier,
D. Albertini,
O. Renault
Abstract:
Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure has been studied using fully energy-filtered PhotoEmission Microscopy (PEEM) and synchrotron radiation. Shifts, induced by ferroelectric polarization,…
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Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure has been studied using fully energy-filtered PhotoEmission Microscopy (PEEM) and synchrotron radiation. Shifts, induced by ferroelectric polarization, of up to 300 meV are observed in the work function of the sample. The surface is Ba-O terminated. Polarization-induced distortion of the electronic structure is observed in the valence band and on the Ba 3d, Ti 2p and O 1s core levels of BTO. Polarization dependent surface adsorption is observed. A simple electrostatic model based on net surface charge is not sufficient to explain the observed modifications in the electronic levels.
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Submitted 5 June, 2018;
originally announced June 2018.
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Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure
Authors:
J. E. Rault,
G. Agnus,
T. Maroutian,
V. Pillard,
Ph. Lecoeur,
G. Niu,
B. Vilquin,
A. Bendounan,
M. G. Silly,
F. Sirotti,
N. Barrett
Abstract:
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe t…
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In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.
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Submitted 14 July, 2013;
originally announced July 2013.
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Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
Authors:
J. E. Rault,
G. Agnus,
T. Maroutian,
V. Pillard,
Ph. Lecoeur,
G. Niu,
B. Vilquin,
M. G. Silly,
A. Bendounan,
F. Sirotti,
N. Barrett
Abstract:
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is suppor…
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The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
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Submitted 25 March, 2013; v1 submitted 19 February, 2013;
originally announced February 2013.
