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Quantum paraelectric varactors for radio-frequency measurements at mK temperatures
Authors:
P. Apostolidis,
B. J. Villis,
J. F. Chittock-Wood,
A. Baumgartner,
V. Vesterinen,
S. Simbierowicz,
J. Hassel,
M. R. Buitelaar
Abstract:
Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators and impedance matching. This is difficult to achieve using conventional semiconductor or ferroelectric-based varactors in the detection circuit as their performan…
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Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators and impedance matching. This is difficult to achieve using conventional semiconductor or ferroelectric-based varactors in the detection circuit as their performance degrades significantly in the mK temperature range relevant for solid-state quantum devices. Here we explore a different type of material, strontium titanate, a quantum paraelectric with exceptionally large field-tunable permittivity at low temperatures. Using strontium titanate varactors we demonstrate perfect impedance matching and resonator frequency tuning at 6 mK and characterize the varactors at this temperature in terms of their capacitance tunability, dissipative losses and magnetic field sensitivity. We show that this allows us to optimize the radio-frequency readout signal-to-noise ratio of carbon nanotube quantum dot devices to achieve a charge sensitivity of 4.8 $μ$e/Hz$^{1/2}$ and capacitance sensitivity of 0.04 aF/Hz$^{1/2}$.
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Submitted 7 July, 2020;
originally announced July 2020.
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2D-3D crossover in a dense electron liquid in silicon
Authors:
Guy Matmon,
Eran Ginossar,
Byron J. Villis,
Alex Kölker,
Tingbin Lim,
Hari Solanki,
Steven R. Schofield,
Neil J. Curson,
Juerong Li,
Ben N. Murdin,
Andrew J. Fisher,
Gabriel Aeppli
Abstract:
Do** of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$)…
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Do** of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.
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Submitted 15 February, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Defect detection in nano-scale transistors based on radio-frequency reflectometry
Authors:
B. J. Villis,
A. O. Orlov,
X. Jehl,
G. L. Snider,
P. Fay,
M. Sanquer
Abstract:
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations are observed that persist in the fully depleted regime where the SET dot is completely empty. A model, confirmed by simulations, indicates that these oscillati…
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Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations are observed that persist in the fully depleted regime where the SET dot is completely empty. A model, confirmed by simulations, indicates that these oscillations originate from charging of an unintended floating gate located in the heavily doped polycrystalline silicon gate stack. The technique used in this experiment can be applied for detailed spectroscopy of various charge defects in nanoscale SETs and field effect transistors
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Submitted 21 September, 2011;
originally announced September 2011.
