Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride
Authors:
Onurcan Kaya,
Luigi Colombo,
Aleandro Antidormi,
Marco A. Villena,
Mario Lanza,
Ivan Cole,
Stephan Roche
Abstract:
Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties o…
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Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of amorphous boron nitride upon hydrogen do**. With the introduction of a Gaussian approximation potential (GAP) for atomistic simulations, we investigate the changing morphology of amorphous boron nitride with varying H do** concentrations. We found that for 8 at% of H do**, the concentration of $sp^3$-hybridized atoms reaches a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of amorphous boron nitride films for numerous applications.
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Submitted 22 December, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets
Authors:
Fei Hui,
Wen**g Fang,
Wei Sun Fang,
Tewa Kpulun,
Haozhe Wang,
Hui Ying Yang,
Marco A. Villena,
Gary Harris,
**g Kong,
Mario Lanza
Abstract:
Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electroni…
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Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Here it is shown that the electrical properties of h-BN stacks grown on polycrystalline Pt vary a lot depending on the crystalline orientation of the Pt grain, but within the same grain the electrical properties of the h-BN are very homogeneous. The reason is that the thickness of the CVD-grown h-BN stack is different on each Pt grain. Conductive atomic force microscopy (CAFM) maps show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one Pt grain to another. However, probe station experiments reveal that the variability of electronic devices fabricated within the same Pt grain is surprisingly small. As cutting-edge electronic devices are ultra-scaled, and as the size of the metallic substrate grains can easily exceed 100 μm (in diameter), CVD-grown h-BN stacks may be useful to fabricate electronic devices with low variability.
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Submitted 30 November, 2018;
originally announced November 2018.
