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Optical probing of phononic properties of a tin-vacancy color center in diamond
Authors:
Cem Güney Torun,
Joseph H. D. Munns,
Franziska Marie Herrmann,
Viviana Villafane,
Kai Müller,
Andreas Thies,
Tommaso Pregnolato,
Gregor Pieplow,
Tim Schröder
Abstract:
The coherence characteristics of a tin-vacancy color center in diamond are investigated through optical means including coherent population trap** between the ground state orbital levels and linewidth broadening effects. Due to the large spin-orbit splitting of the orbital ground states, thermalization between the ground states occurs at rates that are impractical to measure directly. Here, spec…
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The coherence characteristics of a tin-vacancy color center in diamond are investigated through optical means including coherent population trap** between the ground state orbital levels and linewidth broadening effects. Due to the large spin-orbit splitting of the orbital ground states, thermalization between the ground states occurs at rates that are impractical to measure directly. Here, spectral information is transformed into its conjugate variable time, providing picosecond resolution and revealing an orbital depolarization timescale of ${\sim30{\rm~ps}}$. Consequences of the investigated dynamics are then used to estimate spin dephasing times limited by thermal effects.
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Submitted 8 December, 2023;
originally announced December 2023.
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Fast optoelectronic charge state conversion of silicon vacancies in diamond
Authors:
Manuel Rieger,
Viviana Villafane,
Lina M. Todenhagen,
Stephan Matthies,
Stefan Appel,
Martin S. Brandt,
Kai Mueller,
Jonathan J. Finley
Abstract:
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectro…
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Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV$^-$ and dark SiV$^{2-}$ with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV$^-$ photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV$^{2-}$ to the bright SiV$^-$ to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ via optical pum**. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies.
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Submitted 18 October, 2023;
originally announced October 2023.
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Transfer Matrix Model for Emission Profile Optimization of Radial Gratings
Authors:
Stefan Appel,
Viviana Villafane,
Jonathan J. Finley,
Kai Müller
Abstract:
Radial Bragg gratings are commonly used to enhance light extraction from quantum emitters, but lack a well-suited, fast simulation method for optimization beyond periodic designs. To overcome this limitation, we propose and demonstrate an algorithm based on the transfer matrix model (TMM) to calculate the free-space emission of such gratings. Using finite difference time domain (FDTD) simulations,…
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Radial Bragg gratings are commonly used to enhance light extraction from quantum emitters, but lack a well-suited, fast simulation method for optimization beyond periodic designs. To overcome this limitation, we propose and demonstrate an algorithm based on the transfer matrix model (TMM) to calculate the free-space emission of such gratings. Using finite difference time domain (FDTD) simulations, we characterize the free-space emission and transfer matrices of single grating components. Our TMM then combines any number of components to receive the total emission. Randomized benchmarks verify that results from our method agree within 98 % with FDTD while reducing simulation time by one to two orders of magnitude. The speed advantage of our approach is shown by maximizing emission of a fifteen-trench circular grating into a Gaussian mode. We expect that our novel algorithm will facilitate the optimization of radial gratings, enabling quantum light sources with unprecedented collection efficiencies.
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Submitted 11 October, 2023;
originally announced October 2023.
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Probing the Dark Exciton in Monolayer MoS$_2$ by Quantum Interference in Second Harmonic Generation Spectroscopy
Authors:
Chenjiang Qian,
Viviana Villafañe,
Pedro Soubelet,
Peirui Ji,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned throu…
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We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned through the energy of the dark exciton D. This observation is indicative of quantum interference arising from the strong two-photon light-matter interaction. We further probe the incoherent relaxation from the dark state to the bright excitons, including X$^0$ and localized excitons LX, by the resonant enhancement of their intensities at the SHG-D resonance. The relaxation of D to bright excitons is strongly suppressed on the bare substrate whilst enabled when the hBN/MoS$_2$/hBN heterostructure is integrated in a nanobeam cavity. The relaxation enabled by the cavity is explained by the phonon scattering enhanced by the cavity phononic effects. Our work reveals the two-photon quantum interference with long-lived dark states and enables the control through nanostructuring of the substrate. These results indicate the great potential of dark excitons in 2D-material based nonlinear quantum devices.
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Submitted 5 September, 2023;
originally announced September 2023.
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Nonlinear Dispersion Relation and Out-of-Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers
Authors:
Marko M. Petrić,
Viviana Villafañe,
Paul Herrmann,
Amine Ben Mhenni,
Ying Qin,
Yasir Sayyad,
Yuxia Shen,
Sefaattin Tongay,
Kai Müller,
Giancarlo Soavi,
Jonathan J. Finley,
Matteo Barbone
Abstract:
Janus transition metal dichalcogenides are an emerging class of atomically thin materials with engineered broken mirror symmetry that gives rise to long-lived dipolar excitons, Rashba splitting, and topologically protected solitons. They hold great promise as a versatile nonlinear optical platform due to their broadband harmonic generation tunability, ease of integration on photonic structures, an…
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Janus transition metal dichalcogenides are an emerging class of atomically thin materials with engineered broken mirror symmetry that gives rise to long-lived dipolar excitons, Rashba splitting, and topologically protected solitons. They hold great promise as a versatile nonlinear optical platform due to their broadband harmonic generation tunability, ease of integration on photonic structures, and nonlinearities beyond the basal crystal plane. Here, we study second and third harmonic generation in MoSSe and WSSe Janus monolayers. We use polarization-resolved spectroscopy to map the full second-order susceptibility tensor of MoSSe, including its out-of-plane components. In addition, we measure the effective third-order susceptibility, and the second-order nonlinear dispersion close to exciton resonances for both MoSSe and WSSe at room and cryogenic temperatures. Our work sets a bedrock for understanding the nonlinear optical properties of Janus transition metal dichalcogenides and probing their use in the next-generation on-chip multifaceted photonic devices.
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Submitted 29 August, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity
Authors:
Chenjiang Qian,
Mirco Troue,
Johannes Figueiredo,
Pedro Soubelet,
Viviana Villafañe,
Johannes Beierlein,
Sebastian Klembt,
Andreas V. Stier,
Sven Höfling,
Alexander W. Holleitner,
Jonathan J. Finley
Abstract:
Moiré trapped interlayer excitons (IXs) in heterobilayer transition metal dichalcogenides currently attract strong interest due to their potential for non-classical light generation, coherent spin-photon interfaces and exploring novel correlated phases of electrons. Here, we report lasing of moiré trapped IXs by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer in a high-Q (…
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Moiré trapped interlayer excitons (IXs) in heterobilayer transition metal dichalcogenides currently attract strong interest due to their potential for non-classical light generation, coherent spin-photon interfaces and exploring novel correlated phases of electrons. Here, we report lasing of moiré trapped IXs by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer in a high-Q ($>10^4$) nanophotonic cavity. We control the detuning between the IX line and the cavity mode with a magnetic field and measure the dipolar coupling strength to the cavity mode to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the $82\ \mathrm{μeV}$ predicted by theory. The emission from the cavity mode shows clear threshold-like behaviour. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviours are significant at resonance whilst weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré trapped IXs with macroscopic coherence extending over the lengthscale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using 2D materials.
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Submitted 9 August, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers
Authors:
Viviana Villafañe,
Malte Kremser,
Ruven Hübner,
Marko M. Petrić,
Nathan P. Wilson,
Andreas V. Stier,
Kai Müller,
Matthias Florian,
Alexander Steinhoff,
Jonathan J. Finley
Abstract:
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern i…
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Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire excitons. We identify two distinct intralayer moire excitons for R-stacking, while H-stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire exciton species.
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Submitted 21 October, 2022;
originally announced October 2022.
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Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
Georgy V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emis…
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Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters.
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Submitted 31 January, 2023; v1 submitted 30 September, 2022;
originally announced October 2022.
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Coupling of MoS$_2$ Excitons with Lattice Phonons and Cavity Vibrational Phonons in Hybrid Nanobeam Cavities
Authors:
Chenjiang Qian,
Viviana Villafañe,
Marko M. Petrić,
Pedro Soubelet,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
We report resonant Raman spectroscopy of neutral excitons X$^0$ and intravalley trions X$^-$ in hBN-encapsulated MoS$_2$ monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS$_2$ lattice phonons and X$^0$/X$^-$ emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X…
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We report resonant Raman spectroscopy of neutral excitons X$^0$ and intravalley trions X$^-$ in hBN-encapsulated MoS$_2$ monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS$_2$ lattice phonons and X$^0$/X$^-$ emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X$^0$-induced Raman scattering and a suppression for X$^-$-induced, and explain our findings as arising from the tripartite exciton-phonon-phonon coupling. The cavity vibrational phonons provide intermediate replica states of X$^0$ for resonance conditions in the scattering of lattice phonons, thus enhancing the Raman intensity. In contrast, the tripartite coupling involving X$^-$ is found to be much weaker, an observation explained by the geometry-dependent polarity of the electron and hole deformation potentials. Our results indicate that phononic hybridization between lattice and nanomechanical modes plays a key role in the excitonic photophysics and light-matter interaction in 2D-material nanophotonic systems.
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Submitted 23 March, 2023; v1 submitted 8 April, 2022;
originally announced April 2022.
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Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
G. V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Nathan P. Wilson,
Roberto Rizzato,
Stephan Mohr,
Alexander W. Holleitner,
Dominik B. Bucher,
Andreas V. Stier,
JonathanJ. Finley
Abstract:
Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n…
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Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.
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Submitted 22 June, 2022; v1 submitted 22 February, 2022;
originally announced February 2022.
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Three-photon excitation of quantum two-level systems
Authors:
Viviana Villafañe,
Bianca Scaparra,
Manuel Rieger,
Stefan Appel,
Rahul Trivedi,
Tongtong Zhu,
John Jarman,
Rachel A. Oliver,
Robert A. Taylor,
Jonathan J. Finley,
Kai Mueller
Abstract:
We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron…
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We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron and hole wavefunctions in semiconductor quantum dots. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to non-resonant excitation.
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Submitted 31 January, 2023; v1 submitted 4 February, 2022;
originally announced February 2022.
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Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS$_2$ Monolayers
Authors:
Chenjiang Qian,
Viviana Villafañe,
Pedro Soubelet,
Alexander Hötger,
Takashi Taniguchi,
Kenji Watanabe,
Nathan P. Wilson,
Andreas V. Stier,
Alexander W. Holleitner,
Jonathan J. Finley
Abstract:
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of th…
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Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Submitted 25 December, 2022; v1 submitted 9 July, 2021;
originally announced July 2021.
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Quantum well photoelastic comb for ultra-high frequency cavity optomechanics
Authors:
V. Villafañe,
S. Anguiano,
A. E. Bruchhausen,
G. Rozas,
J. Bloch,
C. Gomez Carbonell,
A. Lemaître,
A. Fainstein
Abstract:
Optomechanical devices operated at their quantum limit open novel perspectives for the ultrasensitive determination of mass and displacement, and also in the broader field of quantum technologies. The access to higher frequencies implies operation at higher temperatures and stronger immunity to environmental noise. We propose and demonstrate here a new concept of quantum well photoelastic comb for…
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Optomechanical devices operated at their quantum limit open novel perspectives for the ultrasensitive determination of mass and displacement, and also in the broader field of quantum technologies. The access to higher frequencies implies operation at higher temperatures and stronger immunity to environmental noise. We propose and demonstrate here a new concept of quantum well photoelastic comb for the efficient coupling of light to optomechanical resonances at hundreds of GHz in semiconductor hybrid resonators. A purposely designed ultra-high resolution Raman spectroscopy set-up is exploited to evidence the transfer of spectral weight from the mode at 60 GHz to modes at 190-230 GHz, corresponding to the $8^{th}$ and $10^{th}$ overtone of the fundamental breathing mode of the light-sound cavities. The coupling to mechanical frequencies two orders of magnitude larger than alternative approaches is attained without reduction of the optomechanical constant $g_0$. The wavelength dependence of the optomechanical coupling further proves the role of resonant photoelastic interaction, highlighting the potentiality to access strong-coupling regimes. The experimental results show that electrostrictive forces allow for the design of devices optimized to selectively couple to specific mechanical modes. Our proposal opens up exciting opportunities towards the implementation of novel approaches applicable in quantum and ultra-high frequency information technologies.
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Submitted 19 December, 2018; v1 submitted 29 August, 2018;
originally announced August 2018.
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Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities
Authors:
V. Villafañe,
P. Sesin,
P. Soubelet,
S. Anguiano,
A. E. Bruchhausen,
G. Rozas,
C. Gomez Carbonell,
A. Lemaître,
A. Fainstein
Abstract:
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation…
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Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20 GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated to the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.
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Submitted 23 March, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Optomechanical properties of GaAs/AlAs micropillar resonators operating in the 18 GHz range
Authors:
F. R. Lamberti,
Q. Yao,
L. Lanco,
D. T. Nguyen,
M. Esmann,
A. Fainstein,
P. Sesin,
S. Anguiano,
V. Villafañe,
A. Bruchhausen,
P. Senellart,
I. Favero,
N. D. Lanzillotti-Kimura
Abstract:
Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100 GHz range. Here, we investigate through numerical simulations the optomechanical properties of this new platform. We evidence how the Poisson's ratio and semicon…
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Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100 GHz range. Here, we investigate through numerical simulations the optomechanical properties of this new platform. We evidence how the Poisson's ratio and semiconductor-vacuum boundary conditions lead to very distinct features in the mechanical and optical three dimensional confinement. We find a strong dependence of the mechanical quality factor and strain distribution on the micropillar radius, in great contrast to what is predicted and observed in the optical domain. The derived optomechanical coupling constants g_0 reach ultra-large values in the 10^6 rad/s range.
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Submitted 26 July, 2017;
originally announced July 2017.
