Showing 1–5 of 5 results for author: Vilan, A

Molecular Electronics by Chemical Modification of Semiconductor Surfaces

Authors: Ayelet Vilan, David Cahen

Abstract: Inserting molecular monolayers within metal / semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors and possible future bioelectronic devices, which are b… ▽ More Inserting molecular monolayers within metal / semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors and possible future bioelectronic devices, which are based mostly on non-classical semiconducting materials (section 1). The review covers the main aspects of using chemistry to - control alignment of energy levels at interfaces (section 2): - passivate interface states (section 3), - insert molecular dipoles at interfaces (section 4), - induce charge rearrangement at and around interfaces (section 5). After setting the stage, we consider the unique current-voltage characteristics that result from transport across metal / molecular monolayer / semiconductor interfaces. Here we focus on the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region (section 6), on the other hand, as well as how different monolayer chemistries control each of the these barriers. Section 7 provides practical tools to experimentally identify these two barriers, and distinguish between them, after which section 8 concludes the story with a summary and a view to the future. While this review is concerned with hybrid semiconductor / molecular effects (see Refs. 1,2 for earlier reviews on this topic), issues related to formation of monolayers and contacts, as well as charge transport that is solely dominated by molecules, have been reviewed elsewhere[3-6], including by us recently[7]. △ Less

Submitted 11 December, 2016; originally announced December 2016.

Large-area, ensemble molecular electronics: Motivation and challenges

Authors: Ayelet Vilan, Dinesh Aswal, David Cahen

Abstract: We review charge transport across molecular monolayers, which is central to molecular electronics (MoE) using large-area junctions (NmJ). We strive to provide a wide conceptual overview of three main sub-topics. First, a broad introduction places NmJ in perspective to related fields of research, and to single molecule junctions (1mJ), in addition to a brief historical account. As charge transport… ▽ More We review charge transport across molecular monolayers, which is central to molecular electronics (MoE) using large-area junctions (NmJ). We strive to provide a wide conceptual overview of three main sub-topics. First, a broad introduction places NmJ in perspective to related fields of research, and to single molecule junctions (1mJ), in addition to a brief historical account. As charge transport presents an ultra sensitive probe for the electronic perfection of interfaces, in the second part ways to form both the monolayer and the contacts are described to construct reliable, defect-free interfaces. The last part is dedicated to understanding and analyses of current-voltage (I-V) traces across molecular junctions. Notwithstanding the original motivation of MoE, I-V traces are often not very sensitive to molecular details and then provide a poor probe for chemical information. Instead we focus on how to analyse the net electrical performance of molecular junctions, from a functional device perspective. Finally, we shortly point to creation of a built-in electric field as a key to achieve functionality, including non-linear current-voltage characteristics that originate in the molecules or their contacts to the electrodes. △ Less

Submitted 24 December, 2016; v1 submitted 11 December, 2016; originally announced December 2016.

A permanent, stable, and simple top-contact for molecular electronics on Si: Pb evaporated on organic monolayers

Authors: Robert Lovrinčić, Olga Kraynis, Rotem Har-Lavan, Abd-Elrazek Haj-Yahya, Wenjie Li, Ayelet Vilan, David Cahen

Abstract: We show that thermally evaporated lead (Pb) preserves the electronic properties of organic monolayers on Si and the surface passivation of the Si surface itself. The obtained current-voltage characteristics are in accordance with results from the well-established hanging mercury drop method and preserve both the molecule-induced dipolar effect and length-attenuation of current. We rationalize our… ▽ More We show that thermally evaporated lead (Pb) preserves the electronic properties of organic monolayers on Si and the surface passivation of the Si surface itself. The obtained current-voltage characteristics are in accordance with results from the well-established hanging mercury drop method and preserve both the molecule-induced dipolar effect and length-attenuation of current. We rationalize our findings by the lack of interaction between the Pb and the Si substrate. Our method is fast, scalable, compatible to standard semiconductor processing, and can help to spur the large-scale utilization of silicon-organic hybrid electronics. △ Less

Submitted 9 November, 2012; originally announced November 2012.

Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

Authors: Omer Yaffe, Yabing Qi, Lior Segev, Luc Scheres, Sreenivasa Reddy Puniredd, Tal Ely, Hossam Haick, Han Zuilhof, Leeor Kronik, Antoine Kahn, Ayelet Vilan, David Cahen

Abstract: We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential res… ▽ More We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction, that for both p- and n-type junctions the energy difference between the Fermi level and LUMO, i.e., electron tunneling, controls charge transport. The Fermi level-LUMO energy difference, experimentally determined by IPES, agrees with the non-resonant tunneling barrier height deduced from the exponential length-attenuation of the current. △ Less

Submitted 26 October, 2011; v1 submitted 20 June, 2011; originally announced June 2011.

Molecular electronics at Metal / Semiconductor Junctions Si inversion by Sub-nm Molecular Films

Authors: Omer Yaffe, Luc Scheres, Sreenivasa Reddy Puniredd, Nir Stein, Ariel Biller, Rotem Har Lavan, Hagay Shpaisman, Han Zuilhof, Hossam Haick, David Cahen, Ayelet Vilan

Abstract: Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rath… ▽ More Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise. △ Less

Submitted 22 March, 2009; originally announced March 2009.