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High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
P. B. Demina,
D. A. Pavlov,
Yu. V. Usov,
V. E. Milin,
Yu. M. Kuznetsov,
R. N. Kriukov,
A. A. Konakov,
N. Yu. Tabachkova
Abstract:
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain…
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The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 C revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The X-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance was observed in the conductive layers up to room temperature. Magnetoresistance measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 C are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least room temperature in case of the conductive layer obtained at 200 C. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.
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Submitted 1 September, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
I. N. Antonov,
R. N. Kriukov,
S. Yu. Zubkov,
D. E. Nikolichev,
A. A. Konakov,
Yu. A. Dudin,
Yu. M. Kuznetsov,
N. A. Sobolev,
M. P. Temiryazeva
Abstract:
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depen…
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The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.
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Submitted 20 February, 2019; v1 submitted 9 February, 2019;
originally announced February 2019.
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Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
Authors:
F. C. D. Moraes,
S. Ullah,
M. G. A. Balanta,
F. Iikawa,
Y. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. N. Zvonkov,
F. G. G. Hernandez
Abstract:
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variat…
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Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period.
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Submitted 4 February, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
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The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers
Authors:
A. V. Kudrin,
V. P. Lesnikov,
D. A. Pavlov,
Yu. V. Usov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. E. Milin,
R. N. Kriukov,
N. A. Sobolev,
V. N. Trushin
Abstract:
Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composi…
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Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composition of the (In,Fe)Sb compound on the growth temperature. An increase of the latter from 220C to 300C leads to a coalescence of Fe atoms and formation of a secondary crystalline phase in the (In,Fe)Sb layer with a total Fe content of ca. 10 at. %. At the same time, the Ga0.8Fe0.2Sb layers obtained at 220C and 300C are single-phase. The separate In0.8Fe0.2Sb and Ga0.8Fe0.2Sb layers grown on i-GaAs at 220C are DMS with Curie temperatures of ca. 190 K and 170 K, respectively. The three-layer p-i-n diode (In,Fe)Sb/GaAs/(Ga,Fe)Sb structure grown on a GaAs substrate at 220C with a Fe content of ca. 10 at. % in the single-phase (In,Fe)Sb and (Ga,Fe)Sb layers has a rather high crystalline quality and can be considered as a prototype of a bipolar spintronic device based on Fe-doped III-V semiconductors.
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Submitted 29 March, 2019; v1 submitted 31 October, 2018;
originally announced October 2018.
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The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
Authors:
A. V. Kudrin,
O. V. Vikhrova,
Yu. A. Danilov,
M. V. Dorokhin,
I. L. Kalentyeva,
A. A. Konakov,
V. K. Vasiliev,
D. A. Pavlov,
Yu. V. Usov,
B. N. Zvonkov
Abstract:
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with h…
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We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.
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Submitted 2 February, 2019; v1 submitted 20 April, 2018;
originally announced April 2018.
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High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor
Authors:
A. V. Kudrin,
Yu. A. Danilov,
V. P. Lesnikov,
O. V. Vikhrova,
D. A. Pavlov,
Yu. V. Usov,
I. N. Antonov,
R. N. Krukov,
N. A. Sobolev
Abstract:
The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonan…
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The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonant character of magnetic circular dichroism confirms the intrinsic ferromagnetism in the (In,Fe)Sb layers. We suggest that the ferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparently is determined by the mechanism of superexchange interaction between Fe atoms (This work was presented at the XXI Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v.1, p. 195), http://nanosymp.ru/UserFiles/Symp/2017_v1.pdf).
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Submitted 22 September, 2017; v1 submitted 25 May, 2017;
originally announced May 2017.
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Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
Authors:
M. A. G. Balanta,
M. J. S. P. Brasil,
F. Iikawa,
Udson C. Mendes,
J. A. Brum,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. N. Zvonkov
Abstract:
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resol…
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We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
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Submitted 17 April, 2016; v1 submitted 9 November, 2015;
originally announced November 2015.
