Showing 1–13 of 13 results for author: Vikhrova, O

Multi-SIM support in 5G Evolution: Challenges and Opportunities

Authors: O. Vikhrova, S. Pizzi, A. Terzani, L. Araujo, A. Orsino, G. Araniti

Abstract: Devices with multiple Subscriber Identification Modules (SIM)s are expected to prevail over the conventional devices with only one SIM. Despite the growing demand for such devices, only proprietary solutions are available so far. To fill this gap, the Third Generation Partnership Project (3GPP) is aiming at the development of unified cross-platform solutions for multi-SIM device coordination. This… ▽ More Devices with multiple Subscriber Identification Modules (SIM)s are expected to prevail over the conventional devices with only one SIM. Despite the growing demand for such devices, only proprietary solutions are available so far. To fill this gap, the Third Generation Partnership Project (3GPP) is aiming at the development of unified cross-platform solutions for multi-SIM device coordination. This paper extends the technical discussion and investigation of the 3GPP solutions for improving mobile Terminated (MT) service delivery to multi-SIM devices. Implementation trade-offs, impact on the Quality of Service(QoS), and possible future directions in 3GPP are outlined. △ Less

Submitted 20 January, 2022; originally announced January 2022.

Comments: This paper has been accepted for publication in IEEE Communications Standards Magazine

AI-Aided Integrated Terrestrial and Non-Terrestrial 6G Solutions for Sustainable Maritime Networking

Authors: Salwa Saafi, Olga Vikhrova, Gábor Fodor, Jiri Hosek, Sergey Andreev

Abstract: The maritime industry is experiencing a technological revolution that affects shipbuilding, operation of both seagoing and inland vessels, cargo management, and working practices in harbors. This ongoing transformation is driven by the ambition to make the ecosystem more sustainable and cost-efficient. Digitalization and automation help achieve these goals by transforming ship** and cruising int… ▽ More The maritime industry is experiencing a technological revolution that affects shipbuilding, operation of both seagoing and inland vessels, cargo management, and working practices in harbors. This ongoing transformation is driven by the ambition to make the ecosystem more sustainable and cost-efficient. Digitalization and automation help achieve these goals by transforming ship** and cruising into a much more cost- and energy-efficient, and decarbonized industry segment. The key enablers in these processes are always-available connectivity and content delivery services, which can not only aid ship** companies in improving their operational efficiency and reducing carbon emissions but also contribute to enhanced crew welfare and passenger experience. Due to recent advancements in integrating high-capacity and ultra-reliable terrestrial and non-terrestrial networking technologies, ubiquitous maritime connectivity is becoming a reality. To cope with the increased complexity of managing these integrated systems, this article advocates the use of artificial intelligence and machine learning-based approaches to meet the service requirements and energy efficiency targets in various maritime communications scenarios. △ Less

Submitted 25 January, 2022; v1 submitted 18 January, 2022; originally announced January 2022.

Comments: The article has been accepted for publication in IEEE Network

Group-based Delivery of Critical Traffic in Cellular IoT Networks

Authors: O. Vikhrova, S. Pizzi, A. Molinaro, A. Iera, K. Samuylov, G. Araniti

Abstract: Fifth generation (5G) networks are expected to connect a huge number of Internet of Things (IoT) devices in many usage scenarios. The challenges of typical massive IoT applications with sporadic and short packet uplink transmissions are well studied, while not enough attention is given to the delivery of content of common interest, such as software/firmware updates and remote control, towards IoT… ▽ More Fifth generation (5G) networks are expected to connect a huge number of Internet of Things (IoT) devices in many usage scenarios. The challenges of typical massive IoT applications with sporadic and short packet uplink transmissions are well studied, while not enough attention is given to the delivery of content of common interest, such as software/firmware updates and remote control, towards IoT devices in emerging point-to-multipoint scenarios. Moreover, the delivery of delay-sensitive IoT traffic is not sufficiently addressed in the literature. In this work we (i) identify the drawbacks of the current Single-Cell Point-to-Multipoint (SC-PTM) solution for unplanned critical traffic delivery in cellular IoT (cIoT) networks, and (ii) propose paging and multicast schemes for a fast distribution of critical updates after, e.g., bug fixes or system failures. We benchmark the performance of the proposed paging scheme against similar solutions available in the literature. Our extended SC-PTM framework is energy efficient and guarantees low service latency, as demonstrated both analytically and by simulations. △ Less

Submitted 16 October, 2021; v1 submitted 7 October, 2021; originally announced October 2021.

Age of Information in Multi-hop Networks with Priorities

Authors: Olga Vikhrova, Federico Chiariotti, Beatriz Soret, Giuseppe Araniti, Antonella Molinaro, Petar Popovski

Abstract: Age of Information is a new metric used in real-time status update tracking applications. It measures at the destination the time elapsed since the generation of the last received packet. In this paper, we consider the co-existence of critical and noncritical status updates in a two-hop system, for which the network assigns different scheduling priorities. Specifically, the high priority is reserv… ▽ More Age of Information is a new metric used in real-time status update tracking applications. It measures at the destination the time elapsed since the generation of the last received packet. In this paper, we consider the co-existence of critical and noncritical status updates in a two-hop system, for which the network assigns different scheduling priorities. Specifically, the high priority is reserved to the packets that traverse the two nodes, as they experience worse latency performance. We obtain the distribution of the age and its natural upper bound termed peak age. We provide tight upper and lower bounds for priority updates and the exact expressions for the non-critical flow of packets with a general service distribution. The results give fundamental insights for the design of age-sensitive multi-hop systems. △ Less

Submitted 26 September, 2020; originally announced September 2020.

Comments: Submitted for publication to IEEE Globecom Conference

Information Freshness of Updates Sent over LEO Satellite Multi-Hop Networks

Authors: Federico Chiariotti, Olga Vikhrova, Beatriz Soret, Petar Popovski

Abstract: Low Earth Orbit (LEO) satellite constellations are bringing the Internet of Things (IoT) to the space arena, also known as non-terrestrial networks. Several IoT satellite applications for tracking ships and cargo can be seen as exemplary cases of intermittent transmission of updates whose main performance parameter is the information freshness. This paper analyzes the Age of Information (AoI) of a… ▽ More Low Earth Orbit (LEO) satellite constellations are bringing the Internet of Things (IoT) to the space arena, also known as non-terrestrial networks. Several IoT satellite applications for tracking ships and cargo can be seen as exemplary cases of intermittent transmission of updates whose main performance parameter is the information freshness. This paper analyzes the Age of Information (AoI) of a satellite network with multiple sources and destinations that are very distant and therefore require several consecutive multi-hop transmissions. A packet erasure channel and different queueing policies are considered. We provide closed-form bounds and tight approximations of the average AoI, as well as an upper bound of the Peak Age of Information (PAoI) distribution as a worst-case metric for the system design. The performance evaluation reveals complex trade-offs among age, load, and packet losses. The optimal operational point is found when the combination of arrival rates and packet losses is such that the system load can ensure fresh information at the receiver; nevertheless, achieving this is highly dependent on the mesh topology. Moreover, the potential of an age-aware scheduling strategy is investigated and the fairness among users discussed. The results show the need to identify the bottleneck nodes for the age, as improving the rate and reliability of those critical links will highly impact on the overall performance. The model is general enough to represent other multi-hop mesh networks. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: Submitted for publication to IEEE Journal on Selected Areas in Communications

Peak Age of Information Distribution for Edge Computing with Wireless Links

Authors: Federico Chiariotti, Olga Vikhrova, Beatriz Soret, Petar Popovski

Abstract: Age of Information (AoI) is a critical metric for several Internet of Things (IoT) applications, where sensors keep track of the environment by sending updates that need to be as fresh as possible. The development of edge computing solutions has moved the monitoring process closer to the sensor, reducing the communication delays, but the processing time of the edge node needs to be taken into acco… ▽ More Age of Information (AoI) is a critical metric for several Internet of Things (IoT) applications, where sensors keep track of the environment by sending updates that need to be as fresh as possible. The development of edge computing solutions has moved the monitoring process closer to the sensor, reducing the communication delays, but the processing time of the edge node needs to be taken into account. Furthermore, a reliable system design in terms of freshness requires the knowledge of the full distribution of the Peak AoI (PAoI), from which the probability of occurrence of rare, but extremely damaging events can be obtained. In this work, we model the communication and computation delay of such a system as two First Come First Serve (FCFS) queues in tandem, analytically deriving the full distribution of the PAoI for the M/M/1 - M/D/1 and the M/M/1 - M/M/1 tandems, which can represent a wide variety of realistic scenarios. △ Less

Submitted 19 January, 2021; v1 submitted 10 April, 2020; originally announced April 2020.

Comments: Preprint version of the paper accepted for publication in the Transactions on Communications

MSC Class: 60K25; 68M20 ACM Class: C.2.2; G.3

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Authors: A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, P. B. Demina, D. A. Pavlov, Yu. V. Usov, V. E. Milin, Yu. M. Kuznetsov, R. N. Kriukov, A. A. Konakov, N. Yu. Tabachkova

Abstract: The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain… ▽ More The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 C revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The X-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance was observed in the conductive layers up to room temperature. Magnetoresistance measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 C are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least room temperature in case of the conductive layer obtained at 200 C. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom. △ Less

Submitted 1 September, 2020; v1 submitted 1 November, 2019; originally announced November 2019.

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

Authors: A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, I. N. Antonov, R. N. Kriukov, S. Yu. Zubkov, D. E. Nikolichev, A. A. Konakov, Yu. A. Dudin, Yu. M. Kuznetsov, N. A. Sobolev, M. P. Temiryazeva

Abstract: The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depen… ▽ More The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb. △ Less

Submitted 20 February, 2019; v1 submitted 9 February, 2019; originally announced February 2019.

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

Authors: F. C. D. Moraes, S. Ullah, M. G. A. Balanta, F. Iikawa, Y. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, B. N. Zvonkov, F. G. G. Hernandez

Abstract: Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variat… ▽ More Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period. △ Less

Submitted 4 February, 2019; v1 submitted 14 November, 2018; originally announced November 2018.

Comments: 7 pages, 5 figures

Journal ref: Sci.Rep. 9:7294 (2019) 1-7

The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers

Authors: A. V. Kudrin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, Yu. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, B. E. Milin, R. N. Kriukov, N. A. Sobolev, V. N. Trushin

Abstract: Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composi… ▽ More Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composition of the (In,Fe)Sb compound on the growth temperature. An increase of the latter from 220C to 300C leads to a coalescence of Fe atoms and formation of a secondary crystalline phase in the (In,Fe)Sb layer with a total Fe content of ca. 10 at. %. At the same time, the Ga0.8Fe0.2Sb layers obtained at 220C and 300C are single-phase. The separate In0.8Fe0.2Sb and Ga0.8Fe0.2Sb layers grown on i-GaAs at 220C are DMS with Curie temperatures of ca. 190 K and 170 K, respectively. The three-layer p-i-n diode (In,Fe)Sb/GaAs/(Ga,Fe)Sb structure grown on a GaAs substrate at 220C with a Fe content of ca. 10 at. % in the single-phase (In,Fe)Sb and (Ga,Fe)Sb layers has a rather high crystalline quality and can be considered as a prototype of a bipolar spintronic device based on Fe-doped III-V semiconductors. △ Less

Submitted 29 March, 2019; v1 submitted 31 October, 2018; originally announced October 2018.

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Authors: A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. A. Konakov, V. K. Vasiliev, D. A. Pavlov, Yu. V. Usov, B. N. Zvonkov

Abstract: We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with h… ▽ More We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well. △ Less

Submitted 2 February, 2019; v1 submitted 20 April, 2018; originally announced April 2018.

High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor

Authors: A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, O. V. Vikhrova, D. A. Pavlov, Yu. V. Usov, I. N. Antonov, R. N. Krukov, N. A. Sobolev

Abstract: The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonan… ▽ More The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonant character of magnetic circular dichroism confirms the intrinsic ferromagnetism in the (In,Fe)Sb layers. We suggest that the ferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparently is determined by the mechanism of superexchange interaction between Fe atoms (This work was presented at the XXI Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v.1, p. 195), http://nanosymp.ru/UserFiles/Symp/2017_v1.pdf). △ Less

Submitted 22 September, 2017; v1 submitted 25 May, 2017; originally announced May 2017.

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

Authors: M. A. G. Balanta, M. J. S. P. Brasil, F. Iikawa, Udson C. Mendes, J. A. Brum, Yu. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, B. N. Zvonkov

Abstract: We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resol… ▽ More We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures. △ Less

Submitted 17 April, 2016; v1 submitted 9 November, 2015; originally announced November 2015.

Comments: 12 pages, 5 figures

Journal ref: Sci. Rep. 6, 24537 (2016)