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Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions
Authors:
J. Hätinen,
A. Ronzani,
R. P. Loreto,
E. Mykkänen,
A. Kemppinen,
K. Viisanen,
T. Rantanen,
J. Geisor,
J. Lehtinen,
M. Ribeiro,
J-P. Kaikkonen,
O. Prakash,
V. Vesterinen,
W. Förbom,
E. T. Mannila,
M. Kervinen,
J. Govenius,
M. Prunnila
Abstract:
Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as…
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Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as microprocessors did for computers. Chip scale cooling has been demonstrated with electronic refrigerators based on tunnel junctions in the sub-1 K temperature range. Here, we extend the operation temperature to above 2 K, thereby, bridging the gap between electronic and pulse tube refrigerators. We report on scalable Al-AlOx-Nb superconducting tunnel junction cooler technology that can deliver electronic cooling power of ~ mW/mm^2, which is enough to demonstrate significant electron temperature reduction of 0.82 K against the phonon bath at 2.4 K (34% relative cooling). Our work shows that the key material of integrated superconducting circuits (niobium) enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip scale refrigerators and, at the same time, it introduces a new electro-thermal tool for quantum heat transport experiments.
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Submitted 13 March, 2024;
originally announced March 2024.
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Wafer-scale CMOS-compatible graphene Josephson field-effect transistors
Authors:
Andrey A. Generalov,
Klaara L. Viisanen,
Jorden Senior,
Bernardo R. Ferreira,
Jian Ma,
Mikko Möttönen,
Mika Prunnila,
Heorhii Bohuslavskyi
Abstract:
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS) compatible pr…
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Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS) compatible processing based on wet transfer of chemical vapour deposited graphene, atomic-layer-deposited Al$_{2}$O$_{3}$ gate oxide, and evaporated superconducting Ti/Al source, drain, and gate contacts. By optimizing the contact resistance down to $\sim$ 170 $Ωμm$, we observe proximity-induced superconductivity in the JoFET channels with different gate lengths of 150 - 350 nm. The Josephson junction devices show reproducible critical current $I_{\text{C}}$ tunablity with the local top gate. Our JoFETs are in short diffusive limit with the $I_{\text{C}}$ reaching up to $\sim\,$3 $μA$ for a 50 $μm$ channel width. Overall, our demonstration of CMOS-compatible 2D-material-based JoFET fabrication process is an important step toward graphene-based integrated quantum circuits.
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Submitted 10 May, 2024; v1 submitted 10 January, 2024;
originally announced January 2024.
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Terahertz detection with graphene FETs: photothermoelectric and resistive self-mixing contributions to the detector response
Authors:
Florian Ludwig,
Andrey Generalov,
Jakob Holstein,
Anton Murros,
Klaara Viisanen,
Mika Prunnila,
Hartmut G. Roskos
Abstract:
Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response th…
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Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response that comprises two components: the resistive self-mixing (RSM) and photothermoelectric effect (PTE). The RSM and PTE arise from carrier density oscillations and carrier heating, respectively. In this work, we confirm that the photoresponse can be considered a combination of RSM and PTE, with PTE being the dominant rectification mechanism at higher frequencies. For our CVD G-TeraFETs with asymmetric antenna coupling, the PTE response dominates over the RSM at frequencies above 100 GHz. We find that relative contribution of RSM and PTE to the photoresponse is strongly frequency dependent. Electromagnetic wave simulations show that this behavior is due to the relative change in the total dissipated power between the gated and ungated channel regions of the G-TeraFET as the frequency increases. The simulations also indicate that the channel length over which the PTE contributes to the photoresponse below the gate electrode is approximately the same as the electronic cooling length. Finally, we identify a PTE contribution that can be attributed to the contact do** effect in graphene close to the metal contacts. Our detectors achieve a minimum optical noise-equivalent power of 101 (114) pW/$\sqrt{Hz}$ for asymmetric (symmetric) THz antenna coupling conditions at 400 GHz. This work demonstrates how the PTE response can be used to optimize the THz responsivity of G-TeraFETs.
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Submitted 28 March, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Thermal resistance in superconducting flip-chip assemblies
Authors:
Joel Hätinen,
Emma Mykkänen,
Klaara Viisanen,
Alberto Ronzani,
Antti Kemppinen,
Lassi Lehtisyrjä,
Janne S. Lehtinen,
Mika Prunnila
Abstract:
Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected…
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Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected by compression bonding via indium bumps. The total thermal contact area between the chips is 0.306 mm$^2$ and we find that the temperature dependence of the inter-chip thermal resistance follows the power law of $αT^{-3}$, with $α= 7.7-15.4$ K$^4$$μ$m$^2$/nW. The $T^{-3}$ relation indicates phononic interfacial thermal resistance, which is supported by the vanishing contribution of the electrons to the thermal conduction, due to the superconducting interconnections. Such a thermal resistance value can introduce a thermalization bottleneck in particular at cryogenic temperatures. This can be detrimental for some applications, yet it can also be harnessed. We provide an example of both cases by estimating the parasitic overheating of a cryogenic flip-chip assembly operated under various heat loads as well as simulate the performance of solid-state junction microrefrigerators utilizing the observed thermal isolation.
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Submitted 10 October, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Propagating Quantum Microwaves: Towards Applications in Communication and Sensing
Authors:
Mateo Casariego,
Emmanuel Zambrini Cruzeiro,
Stefano Gherardini,
Tasio Gonzalez-Raya,
Rui André,
Gonçalo Frazão,
Giacomo Catto,
Mikko Möttönen,
Debopam Datta,
Klaara Viisanen,
Joonas Govenius,
Mika Prunnila,
Kimmo Tuominen,
Maximilian Reichert,
Michael Renger,
Kirill G. Fedorov,
Frank Deppe,
Harriet van der Vliet,
A. J. Matthews,
Yolanda Fernández,
R. Assouly,
R. Dassonneville,
B. Huard,
Mikel Sanz,
Yasser Omar
Abstract:
The field of propagating quantum microwaves has started to receive considerable attention in the past few years. Motivated at first by the lack of an efficient microwave-to-optical platform that could solve the issue of secure communication between remote superconducting chips, current efforts are starting to reach other areas, from quantum communications to sensing. Here, we attempt at giving a s…
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The field of propagating quantum microwaves has started to receive considerable attention in the past few years. Motivated at first by the lack of an efficient microwave-to-optical platform that could solve the issue of secure communication between remote superconducting chips, current efforts are starting to reach other areas, from quantum communications to sensing. Here, we attempt at giving a state-of-the-art view of the two, pointing at some of the technical and theoretical challenges we need to address, and while providing some novel ideas and directions for future research. Hence, the goal of this paper is to provide a bigger picture, and -- we hope -- to inspire new ideas in quantum communications and sensing: from open-air microwave quantum key distribution to direct detection of dark matter, we expect that the recent efforts and results in quantum microwaves will soon attract a wider audience, not only in the academic community, but also in an industrial environment.
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Submitted 23 May, 2022;
originally announced May 2022.
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Anomalous electronic heat capacity of copper nanowires at sub-kelvin temperatures
Authors:
K. L. Viisanen,
J. P. Pekola
Abstract:
We have measured the electronic heat capacity of thin film nanowires of copper and silver at temperatures 0.1 - 0.3 K; the films were deposited by standard electron-beam evaporation. The specific heat of the Ag films of sub-100 nm thickness agrees with the bulk value and the free-electron estimate, whereas that of similar Cu films exceeds the corresponding reference values by one order of magnitud…
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We have measured the electronic heat capacity of thin film nanowires of copper and silver at temperatures 0.1 - 0.3 K; the films were deposited by standard electron-beam evaporation. The specific heat of the Ag films of sub-100 nm thickness agrees with the bulk value and the free-electron estimate, whereas that of similar Cu films exceeds the corresponding reference values by one order of magnitude. The origin of the anomalously high heat capacity of copper films remains unknown for the moment. Based on the low heat capacity and the possibility to devise a tunnel probe thermometer on it, the Ag films form a promising absorber material, e.g., for micro-wave photon calorimetry.
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Submitted 28 February, 2018; v1 submitted 9 June, 2016;
originally announced June 2016.
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Dispersive thermometry with a Josephson junction coupled to a resonator
Authors:
O. -P. Saira,
M. Zgirski,
K. L. Viisanen,
D. S. Golubev,
J. P. Pekola
Abstract:
We have embedded a small Josephson junction in a microwave resonator that allows simultaneous dc biasing and dispersive readout. Thermal fluctuations drive the junction into phase diffusion and induce a temperature-dependent shift in the resonance frequency. By sensing the thermal noise of a remote resistor in this manner, we demonstrate primary thermometry in the range from 300 mK to below 100 mK…
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We have embedded a small Josephson junction in a microwave resonator that allows simultaneous dc biasing and dispersive readout. Thermal fluctuations drive the junction into phase diffusion and induce a temperature-dependent shift in the resonance frequency. By sensing the thermal noise of a remote resistor in this manner, we demonstrate primary thermometry in the range from 300 mK to below 100 mK, and high-bandwidth (7.5 MHz) operation with a noise-equivalent temperature of better than 10 $\mathrm{μK/\sqrt{Hz}}$. At a finite bias voltage close to a Fiske resonance, amplification of the microwave probe signal is observed. We develop an accurate theoretical model of our device based on the theory of dynamical Coulomb blockade.
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Submitted 21 July, 2016; v1 submitted 18 April, 2016;
originally announced April 2016.
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Incomplete measurement of work in a dissipative two level system
Authors:
Klaara L. Viisanen,
Samu Suomela,
Simone Gasparinetti,
Olli-Pentti Saira,
Joachim Ankerhold,
Jukka P. Pekola
Abstract:
We discuss work performed on a quantum two-level system coupled to multiple thermal baths. To evaluate the work, a measurement of photon exchange between the system and the baths is envisioned. In a realistic scenario, some photons remain unrecorded as they are exchanged with baths that are not accessible to the measurement, and thus only partial information on work and heat is available. The inco…
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We discuss work performed on a quantum two-level system coupled to multiple thermal baths. To evaluate the work, a measurement of photon exchange between the system and the baths is envisioned. In a realistic scenario, some photons remain unrecorded as they are exchanged with baths that are not accessible to the measurement, and thus only partial information on work and heat is available. The incompleteness of the measurement leads to substantial deviations from standard fluctuation relations. We propose a recovery of these relations, based on including the mutual information given by the counting efficiency of the partial measurement. We further present the experimental status of a possible implementation of the proposed scheme, i.e. a calorimetric measurement of work, currently with nearly single-photon sensitivity.
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Submitted 23 December, 2014;
originally announced December 2014.
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Fast electron thermometry towards ultra-sensitive calorimetric detection
Authors:
S. Gasparinetti,
K. L. Viisanen,
O. -P. Saira,
T. Faivre,
M. Arzeo,
M. Meschke,
J. P. Pekola
Abstract:
We demonstrate radiofrequency thermometry on a micrometer-sized metallic island below 100 mK. Our device is based on a normal metal-insulator-superconductor tunnel junction coupled to a resonator with transmission readout. In the first generation of the device, we achieve 90 μK/Hz^1/2 noise-equivalent temperature with 10 MHz bandwidth. We measure the thermal relaxation time of the electron gas in…
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We demonstrate radiofrequency thermometry on a micrometer-sized metallic island below 100 mK. Our device is based on a normal metal-insulator-superconductor tunnel junction coupled to a resonator with transmission readout. In the first generation of the device, we achieve 90 μK/Hz^1/2 noise-equivalent temperature with 10 MHz bandwidth. We measure the thermal relaxation time of the electron gas in the island, which we find to be of the order of 100 μs. Such a calorimetric detector, upon optimization, can be seamlessly integrated into superconducting circuits, with immediate applications in quantum-thermodynamics experiments down to single quanta of energy.
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Submitted 4 November, 2014; v1 submitted 29 May, 2014;
originally announced May 2014.
