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Coupling a single spin to high-frequency motion
Authors:
Federico Fedele,
Federico Cerisola,
Lea Bresque,
Florian Vigneau,
Juliette Monsel,
Jorge Tabanera,
Kushagra Aggarwal,
Jonathan Dexter,
Sofia Sevitz,
Joe Dunlop,
Alexia Auffèves,
Juan Parrondo,
András Pályi,
Janet Anders,
Natalia Ares
Abstract:
Coupling a single spin to high-frequency mechanical motion is a fundamental bottleneck of applications such as quantum sensing, intermediate and long-distance spin-spin coupling, and classical and quantum information processing. Previous experiments have only shown single spin coupling to low-frequency mechanical resonators, such as diamond cantilevers. High-frequency mechanical resonators, having…
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Coupling a single spin to high-frequency mechanical motion is a fundamental bottleneck of applications such as quantum sensing, intermediate and long-distance spin-spin coupling, and classical and quantum information processing. Previous experiments have only shown single spin coupling to low-frequency mechanical resonators, such as diamond cantilevers. High-frequency mechanical resonators, having the ability to access the quantum regime, open a range of possibilities when coupled to single spins, including readout and storage of quantum states. Here we report the first experimental demonstration of spin-mechanical coupling to a high-frequency resonator. We achieve this all-electrically on a fully suspended carbon nanotube device. A new mechanism gives rise to this coupling, which stems from spin-orbit coupling, and it is not mediated by strain. We observe both resonant and off-resonant coupling as a shift and broadening of the electric dipole spin resonance (EDSR), respectively. We develop a complete theoretical model taking into account the tensor form of the coupling and non-linearity in the motion. Our results propel spin-mechanical platforms to an uncharted regime. The interaction we reveal provides the full toolbox for promising applications ranging from the demonstration of macroscopic superpositions, to the operation of fully quantum engines, to quantum simulators.
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Submitted 29 February, 2024;
originally announced February 2024.
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All rf-based tuning algorithm for quantum devices using machine learning
Authors:
Barnaby van Straaten,
Federico Fedele,
Florian Vigneau,
Joseph Hickie,
Daniel Jirovec,
Andrea Ballabio,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros,
Natalia Ares
Abstract:
Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurem…
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Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures.
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Submitted 8 November, 2022;
originally announced November 2022.
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Stability of long-sustained oscillations induced by electron tunneling
Authors:
Jorge Tabanera-Bravo,
Florian Vigneau,
Juliette Monsel,
Kushagra Aggarwal,
Léa Bresque,
Federico Fedele,
Federico Cerisola,
G. A. D. Briggs,
Janet Anders,
Alexia Aufèves,
Juan M. R. Parrondo,
Natalia Ares
Abstract:
Self-oscillations are the result of an efficient mechanism generating periodic motion from a constant power source. In quantum devices, these oscillations may arise due to the interaction between single electron dynamics and mechanical motion. We show that, due to the complexity of this mechanism, these self-oscillations may irrupt, vanish, or exhibit a bistable behaviour causing hysteresis cycles…
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Self-oscillations are the result of an efficient mechanism generating periodic motion from a constant power source. In quantum devices, these oscillations may arise due to the interaction between single electron dynamics and mechanical motion. We show that, due to the complexity of this mechanism, these self-oscillations may irrupt, vanish, or exhibit a bistable behaviour causing hysteresis cycles. We observe these hysteresis cycles and characterize the stability of different regimes in both single and double quantum dot configurations. In particular cases, we find these oscillations stable for over 20 seconds, many orders of magnitude above electronic and mechanical characteristic timescales, revealing the robustness of the mechanism at play.
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Submitted 26 March, 2024; v1 submitted 8 November, 2022;
originally announced November 2022.
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Probing quantum devices with radio-frequency reflectometry
Authors:
Florian Vigneau,
Federico Fedele,
Anasua Chatterjee,
David Reilly,
Ferdinand Kuemmeth,
Fernando Gonzalez-Zalba,
Edward Laird,
Natalia Ares
Abstract:
Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their…
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Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their duration is extremely short, down to a microsecond or less. Examples of reflectometry experiments, some of which have been realised and others so far only proposed, include projective measurements of qubits and Majorana devices for quantum computing, real-time measurements of mechanical motion and detection of non-equilibrium temperature fluctuations. However, all of these experiments must overcome the central challenge of fast readout: the large mismatch between the typical impedance of quantum devices (set by the resistance quantum) and of transmission lines (set by the impedance of free space). Here, we review the physical principles of radio-frequency reflectometry and its close cousins, measurements of radio-frequency transmission and emission. We explain how to optimise the speed and sensitivity of a radio-frequency measurement, and how to incorporate new tools such as superconducting circuit elements and quantum-limited amplifiers into advanced radio-frequency experiments. Our aim is three-fold: to introduce the readers to the technique, to review the advances to date and to motivate new experiments in fast quantum device dynamics. Our intended audience includes experimentalists in the field of quantum electronics who want to implement radio-frequency experiments or improve them, together with physicists in related fields who want to understand how the most important radio-frequency measurements work.
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Submitted 21 February, 2022;
originally announced February 2022.
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Identifying Pauli spin blockade using deep learning
Authors:
Jonas Schuff,
Dominic T. Lennon,
Simon Geyer,
David L. Craig,
Federico Fedele,
Florian Vigneau,
Leon C. Camenzind,
Andreas V. Kuhlmann,
G. Andrew D. Briggs,
Dominik M. Zumbühl,
Dino Sejdinovic,
Natalia Ares
Abstract:
Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-devic…
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Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.
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Submitted 1 August, 2023; v1 submitted 1 February, 2022;
originally announced February 2022.
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Bridging the reality gap in quantum devices with physics-aware machine learning
Authors:
D. L. Craig,
H. Moon,
F. Fedele,
D. T. Lennon,
B. Van Straaten,
F. Vigneau,
L. C. Camenzind,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field…
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The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach has enabled us to infer the disorder potential of a nanoscale electronic device from electron transport data. This inference is validated by verifying the algorithm's predictions about the gate voltage values required for a laterally-defined quantum dot device in AlGaAs/GaAs to produce current features corresponding to a double quantum dot regime.
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Submitted 22 November, 2021;
originally announced November 2021.
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Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
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Ultrastrong coupling between electron tunneling and mechanical motion
Authors:
Florian Vigneau,
Juliette Monsel,
Jorge Tabanera,
Kushagra Aggarwal,
Léa Bresque,
Federico Fedele,
G. A. D Briggs,
Janet Anders,
Juan M. R. Parrondo,
Alexia Auffèves,
Natalia Ares
Abstract:
The ultrastrong coupling of single-electron tunneling and nanomechanical motion opens exciting opportunities to explore fundamental questions and develop new platforms for quantum technologies. We have measured and modeled this electromechanical coupling in a fully-suspended carbon nanotube device and report a ratio of $g_\mathrm{m}/ω_\mathrm{m} = 2.72 \pm 0.14$, where…
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The ultrastrong coupling of single-electron tunneling and nanomechanical motion opens exciting opportunities to explore fundamental questions and develop new platforms for quantum technologies. We have measured and modeled this electromechanical coupling in a fully-suspended carbon nanotube device and report a ratio of $g_\mathrm{m}/ω_\mathrm{m} = 2.72 \pm 0.14$, where $g_\mathrm{m}/2π= 0.80\pm 0.04$ GHz is the coupling strength and $ω_\mathrm{m}/2π=294.5$ MHz is the mechanical resonance frequency. This is well within the ultrastrong coupling regime and the highest among all other electromechanical platforms. We show that, although this regime was present in similar fully-suspended carbon nanotube devices, it went unnoticed. Even higher ratios could be achieved with improvement on device design.
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Submitted 6 October, 2022; v1 submitted 28 March, 2021;
originally announced March 2021.
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Deep Reinforcement Learning for Efficient Measurement of Quantum Devices
Authors:
V. Nguyen,
S. B. Orbell,
D. T. Lennon,
H. Moon,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learnin…
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Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learning. We focus on double quantum dot devices, demonstrating the fully automatic identification of specific transport features called bias triangles. Measurements targeting these features are difficult to automate, since bias triangles are found in otherwise featureless regions of the parameter space. Our algorithm identifies bias triangles in a mean time of less than 30 minutes, and sometimes as little as 1 minute. This approach, based on dueling deep Q-networks, can be adapted to a broad range of devices and target transport features. This is a crucial demonstration of the utility of deep reinforcement learning for decision making in the measurement and operation of quantum devices.
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Submitted 30 September, 2020;
originally announced September 2020.
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Quantum device fine-tuning using unsupervised embedding learning
Authors:
N. M. van Esbroeck,
D. T. Lennon,
H. Moon,
V. Nguyen,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
D. Sejdinovic,
N. Ares
Abstract:
Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational…
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Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational auto-encoder. Gate voltage settings are set to optimise this score in real-time in an unsupervised fashion. We report fine-tuning times of a double quantum dot device within approximately 40 min.
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Submitted 13 January, 2020;
originally announced January 2020.
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Machine learning enables completely automatic tuning of a quantum device faster than human experts
Authors:
H. Moon,
D. T. Lennon,
J. Kirkpatrick,
N. M. van Esbroeck,
L. C. Camenzind,
Liuqi Yu,
F. Vigneau,
D. M. Zumbühl,
G. A. D. Briggs,
M. A Osborne,
D. Sejdinovic,
E. A. Laird,
N. Ares
Abstract:
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron…
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Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.
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Submitted 8 January, 2020;
originally announced January 2020.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Germanium quantum well Josephson field effect transistors and interferometers
Authors:
Florian Vigneau,
Raisei Mizokuchi,
Dante Colao Zanuz,
XuHai Huang,
Susheng Tan,
Romain Maurand,
Sergey Frolov,
Amir Sammak,
Giordano Scappucci,
François Lefloch,
Silvano De Franceschi
Abstract:
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe…
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Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel.
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Submitted 23 October, 2018; v1 submitted 11 October, 2018;
originally announced October 2018.
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Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
Authors:
R. Mizokuchi,
R. Maurand,
F. Vigneau,
M. Myronov,
S. De Franceschi
Abstract:
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well pl…
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We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well plane, and exceeding 10 out of plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step towards the realization of novel devices for applications in quantum spintronics.
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Submitted 12 April, 2018;
originally announced April 2018.
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Magneto-transport Subbands Spectroscopy in InAs Nanowires
Authors:
Florian Vigneau,
Vladimir Prudkovkiy,
Ivan Duchemin,
Walter Escoffier,
Philippe Caroff,
Yann-Michel Niquet,
Renaud Leturcq,
Michel Goiran,
Bertrand Raquet
Abstract:
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic…
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We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
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Submitted 13 November, 2013;
originally announced November 2013.
