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Ni/Bi bilayers: The effect of thickness on the superconducting properties
Authors:
Gabriel Sant'ana,
David Möckli,
Alexandre da Cas Viegas,
Paulo Pureur,
Milton A. Tumelero
Abstract:
Nickel/Bismuth (Ni/Bi) bilayers have recently attracted attention due to the occurrence of time-reversal symmetry breaking in the superconducting state. Here, we report on the structural, magnetic and electric characterization of thin film Ni/Bi bilayers with several Bi thicknesses. We observed the formation of a complex layered structure depending on the Bi thickness caused by the inter-diffusion…
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Nickel/Bismuth (Ni/Bi) bilayers have recently attracted attention due to the occurrence of time-reversal symmetry breaking in the superconducting state. Here, we report on the structural, magnetic and electric characterization of thin film Ni/Bi bilayers with several Bi thicknesses. We observed the formation of a complex layered structure depending on the Bi thickness caused by the inter-diffusion of Bi and Ni which leads to the stabilization of NiBi$_{3}$ at the Bi/Ni interface. The superconducting transition temperature and the transition width are highly dependent on the Bi thickness and the layer structure. Magnetoelectric transport measurements in perpendicular and parallel magnetic fields were used to investigate the temperature-dependent upper critical field within the framework of the anisotropic Ginzburg-Landau theory and the Werthamer Helfand Hohenberg model. For thicker samples, we observed a conventional behavior, similar to that shown by NiBi$_{3}$ bulk samples, including a small Maki parameter ($α_{M}$ = 0), no spin-orbit scattering ($λ_{SO}$= 0) and nearly isotropic coherence length ($γ$ = $ξ_{\perp}$(0)/$ξ_{\parallel}$(0) $\approx$ 1). The values obtained for these properties are close to those characterizing NiBi$_{3}$ single crystals. On the other hand, in very thin samples the Maki parameter increases to about $α_{M}$ = 2.8. In addition, the coherence length becomes anisotropic ($γ$ = 0.32) and spin-orbit scattering ($λ_{SO}$= 1.2) must be taken into account. Our results unequivocally show that the properties characterizing the superconducting state in the Ni/Bi are strongly dependent on the sample thickness.
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Submitted 19 September, 2023;
originally announced September 2023.
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Spin-Orbit Proximity Effect in Bi/Co Multilayer: The Role of Interface Scattering
Authors:
Arthur Casa Nova Nonnig,
Alexandre da Cas Viegas,
Fabiano Mesquita da Rosa,
Paulo Pureur,
Milton Andre Tumelero
Abstract:
The Spin-Orbit Proximity Effect is the raise of Spin-Orbit Coupling at a layer near to the interface with a strong spin-orbit material. It has been seen in several system such as graphene and ferromagnetic layers. The control of the Spin-Orbit Coupling can be a pathway to discover novel and exotic phases in superconductor and semimetallic systems. Here, we study the magnetoelectrical transport, i.…
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The Spin-Orbit Proximity Effect is the raise of Spin-Orbit Coupling at a layer near to the interface with a strong spin-orbit material. It has been seen in several system such as graphene and ferromagnetic layers. The control of the Spin-Orbit Coupling can be a pathway to discover novel and exotic phases in superconductor and semimetallic systems. Here, we study the magnetoelectrical transport, i.e., magnetoresistance and anomalous Hall effect, in Cobalt/Bismuth multilayers looking for traces of spin-orbit proximity effect and evaluate the origin of such effect. Our results point for an increase of Spontaneous Magnetic Anisotropy of Resistivity and Anomalous Hall Resistivity at very low thicknesses of Cobalt. The analysis of the Anomalous Hall Resisitivity indicate that the Bismuth layers change the scattering mechanism of Hall effect to the extrinsic skew-scattering type, indicating that the spin-orbit proximity effect could be related to the elastic scattering of cobalt free carriers by bismuth sites at the interface.
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Submitted 11 July, 2022;
originally announced July 2022.
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Quantifying magnetic anisotropy dispersion: Theoretical and experimental study of the magnetic properties of anisotropic FeCuNbSiB ferromagnetic films
Authors:
T. M. L. Alves,
C. G. Bezerra,
A. D. C. Viegas,
S. Nicolodi,
M. A. Corrêa,
F. Bohn
Abstract:
The Stoner-Wohlfarth model is a traditional and efficient tool to calculate magnetization curves and it can provides further insights on the fundamental physics associated to the magnetic properties and magnetization dynamics. Here, we perform a theoretical and experimental investigation of the quasi-static magnetic properties of anisotropic systems. We consider a theoretical approach which corres…
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The Stoner-Wohlfarth model is a traditional and efficient tool to calculate magnetization curves and it can provides further insights on the fundamental physics associated to the magnetic properties and magnetization dynamics. Here, we perform a theoretical and experimental investigation of the quasi-static magnetic properties of anisotropic systems. We consider a theoretical approach which corresponds to a modified version of the Stoner-Wohlfarth model to describe anisotropic systems and a distribution function to express the magnetic anistropy dispersion. We propose a procedure to calculate the magnetic properties for the anisotropic case of the SW model from experimental results of the quadrature of magnetization curves, thus quantifying the magnetic anisotropy dispersion. To test the robustness of the approach, we apply the theoretical model to describe the quasi-static magnetic properties of amorphous FeCuNbSiB ferromagnetic films. We perform calculations and directly compare theoretical results with longitudinal and transverse magnetization curves measured for the films. Thus, our results provide experimental evidence to confirm the validity of the theoretical approach to describe the magnetic properties of anisotropic amorphous ferromagnetic films, revealed by the excellent agreement between numerical calculation and experimental results.
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Submitted 1 December, 2014;
originally announced December 2014.
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Universal properties of magnetization dynamics in polycrystalline ferromagnetic films
Authors:
Felipe Bohn,
Marcio Assolin Correa,
Alexandre Da Cas Viegas,
Stefanos Papanikolaou,
Gianfranco Durin,
Rubem Luis Sommer
Abstract:
We investigate the scaling behavior in the statistical properties of Barkhausen noise in ferromagnetic films. We apply the statistical treatment usually employed for bulk materials in experimental Barkhausen noise time series measured with the traditional inductive technique in polycrystalline ferromagnetic films having different thickness from 100 up to 1000 nm, and investigate the scaling expone…
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We investigate the scaling behavior in the statistical properties of Barkhausen noise in ferromagnetic films. We apply the statistical treatment usually employed for bulk materials in experimental Barkhausen noise time series measured with the traditional inductive technique in polycrystalline ferromagnetic films having different thickness from 100 up to 1000 nm, and investigate the scaling exponents. Based on this procedure, we can group the samples in a single universality class, characterized by exponents τ\sim 1.5, α\sim 2.0, and 1/σνz \sim \vartheta \sim 2.0. We interpret these results in terms of theoretical models and provide experimental evidence that a well-known mean-field model for the dynamics of a ferromagnetic domain wall in three-dimensional ferromagnets can be extended for films. We identify that the films present an universal three-dimensional magnetization dynamics, governed by long-range dipolar interactions, even at the smallest thicknesses, indicating that the two-dimensional magnetic behavior commonly verified for films cannot be generalized for all thickness ranges.
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Submitted 3 July, 2013;
originally announced July 2013.
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Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier
Authors:
C. I. L. de Araujo,
M. A. Tumelero,
A. D. C. Viegas,
N. Garcia,
A. A. Pasa
Abstract:
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the ex…
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We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds.
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Submitted 31 October, 2011;
originally announced October 2011.
