-
Exchange Splitting Mechanism of Negative Magnetoresistance in Layered Antiferromagnetic Semimetals
Authors:
P. D. Grigoriev,
N. S. Pavlov,
I. A. Nekrasov,
I. R. Shein,
A. V. Sadakov,
O. A. Sobolevskiy,
E. Maltsev,
N. Perez,
L. Veyrat,
V. M. Pudalov
Abstract:
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe$_2$As$_2$, EuSn$_2$As$_2$, EuSn$_2$P$_2$, etc., where the resistance decreases quadratically with field b…
▽ More
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe$_2$As$_2$, EuSn$_2$As$_2$, EuSn$_2$P$_2$, etc., where the resistance decreases quadratically with field by about $δρ/ρ\sim 4-6\%$ up to the spin-polarization field. Despite the fact that this effect is well documented experimentally, its theoretical explanation is missing up to date. In this paper we propose a novel theoretical mechanism describing the observed magnetoresistance that does not imply either topological origin of the materials, surface roughness, their potential defect structure, or electron-magnon scattering. We believe, the proposed intrinsic mechanism of magnetoresistance is applicable to a wide class of the layered AFM- ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.
△ Less
Submitted 28 May, 2024;
originally announced May 2024.
-
Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2
Authors:
Teresa Tschirner,
Philipp Keßler,
Ruben Dario Gonzalez Betancourt,
Tommy Kotte,
Dominik Kriegner,
Bernd Buechner,
Joseph Dufouleur,
Martin Kamp,
Vedran Jovic,
Libor Smejkal,
Jairo Sinova,
Ralph Claessen,
Tomas Jungwirth,
Simon Moser,
Helena Reichlova,
Louis Veyrat
Abstract:
Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru…
▽ More
Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field.
△ Less
Submitted 1 September, 2023;
originally announced September 2023.
-
Observation of non-Hermitian topology in a multi-terminal quantum Hall device
Authors:
Kyrylo Ochkan,
Raghav Chaturvedi,
Viktor Könye,
Louis Veyrat,
Romain Giraud,
Dominique Mailly,
Antonella Cavanna,
Ulf Gennser,
Ewelina M. Hankiewicz,
Bernd Büchner,
Jeroen van den Brink,
Joseph Dufouleur,
Ion Cosma Fulga
Abstract:
Quantum devices characterized by non-Hermitian topology are predicted to show highly robust and potentially useful properties, but realizing them has remained a daunting experimental task. This is because non-Hermiticity is often associated with gain and loss, which would require precise tailoring to produce the signatures of nontrivial topology. Here, instead of gain/loss, we use the nonreciproci…
▽ More
Quantum devices characterized by non-Hermitian topology are predicted to show highly robust and potentially useful properties, but realizing them has remained a daunting experimental task. This is because non-Hermiticity is often associated with gain and loss, which would require precise tailoring to produce the signatures of nontrivial topology. Here, instead of gain/loss, we use the nonreciprocity of the quantum Hall edge states to directly observe non-Hermitian topology in a multi-terminal quantum Hall ring. Our transport measurements evidence a robust, non-Hermitian skin effect: currents and voltages show an exponential profile, which persists also across Hall plateau transitions away from the regime of maximum non-reciprocity. Our observation of non-Hermitian topology in a quantum device introduces a scalable experimental approach to construct and investigate generic non-Hermitian systems.
△ Less
Submitted 29 May, 2023;
originally announced May 2023.
-
Absence of edge reconstruction for quantum Hall edge channels in graphene devices
Authors:
Alexis Coissard,
Adolfo G. Grushin,
Cécile Repellin,
Louis Veyrat,
Kenji Watanabe,
Takashi Taniguchi,
Frédéric Gay,
Hervé Courtois,
Hermann Sellier,
Benjamin Sacépé
Abstract:
Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs) under perpendicular magnetic field. Yet, despite 40 years of intensive studies using a variety of transport and scanning probe techniques, imaging the real-spa…
▽ More
Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs) under perpendicular magnetic field. Yet, despite 40 years of intensive studies using a variety of transport and scanning probe techniques, imaging the real-space structure of QH edge channels has proven difficult, mainly due to the buried nature of most 2DEGs in semiconductors. Here, we show that QH edge states in graphene are confined to a few magnetic lengths at the crystal edges by performing scanning tunneling spectroscopy up to the edge of a graphene flake on hexagonal boron nitride. These findings indicate that QH edge states are defined by boundary conditions of vanishing electronic wavefunctions at the crystal edges, resulting in ideal one-dimensional chiral channels, free of electrostatic reconstruction. We further evidence a uniform charge carrier density at the edges, contrasting with conjectures on the existence of non-topological upstream modes. The absence of electrostatic reconstruction of quantum Hall edge states has profound implications for the universality of electron and heat transport experiments in graphene-based systems and other 2D crystalline materials.
△ Less
Submitted 22 March, 2023; v1 submitted 14 October, 2022;
originally announced October 2022.
-
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3
Authors:
Teresa Tschirner,
Berengar Leikert,
Felix Kern,
Daniel Wolf,
Axel Lubk,
Martin Kamp,
Kirill Miller,
Fabian Hartmann,
Sven Höfling,
Bernd Büchner,
Joseph Dufouleur,
Marc Gabay,
Michael Sing,
Ralph Claessen,
Louis Veyrat
Abstract:
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, a…
▽ More
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices.
△ Less
Submitted 14 October, 2022;
originally announced October 2022.
-
Two-dimensional ferromagnetic extension of a topological insulator
Authors:
P. Kagerer,
C. I. Fornari,
S. Buchberger,
T. Tschirner,
L. Veyrat,
M. Kamp,
A. V. Tcakaev,
V. Zabolotnyy,
S. L. Morelhão,
B. Geldiyev,
S. Müller,
A. Fedorov,
E. Rienks,
P. Gargiani,
M. Valvidares,
L. C. Folkers,
A. Isaeva,
B. Büchner,
V. Hinkov,
R. Claessen,
H. Bentmann,
F. Reinert
Abstract:
Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficien…
▽ More
Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap.
△ Less
Submitted 28 July, 2022;
originally announced July 2022.
-
Crystal Growth, Exfoliation and Magnetic Properties of Quaternary Quasi-Two-Dimensional CuCrP$_2$S$_6$
Authors:
Sebastian Selter,
Kranthi K. Bestha,
Pritam Bhattacharyya,
Burak Özer,
Yuliia Shemerliuk,
Laura T. Corredor,
Louis Veyrat,
Anja U. B. Wolter,
Liviu Hozoi,
Bernd Büchner,
Saicharan Aswartham
Abstract:
We report optimized crystal growth conditions for the quaternary compound CuCrP$_2$S$_6$ by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. CuCrP$_2$S$_6$ is structurally closely related to the $M_2$P$_2$S$_6$ family ($M$: transition metal), which contain…
▽ More
We report optimized crystal growth conditions for the quaternary compound CuCrP$_2$S$_6$ by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. CuCrP$_2$S$_6$ is structurally closely related to the $M_2$P$_2$S$_6$ family ($M$: transition metal), which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. We present successful exfoliation of such as-grown crystals down to thicknesses of 2.8 nm corresponding to 4 layers. CuCrP$_2$S$_6$ crystallizes in the monoclinic space group $C2/c$. Magnetization measurements reveal an antiferromagnetic ground state with $T_\textrm{N} \approx 30$ K and a positive Curie-Weiss temperature in agreement with dominant ferromagnetic intralayer coupling. Specific heat measurements confirm this magnetic phase transition and the magnetic order is suppressed in an external magnetic field of about 6 T (8 T) applied parallel (perpendicular) to the $ab$ plane. At higher temperatures between 140-200 K additional broad anomalies associated with structural changes accompanying antiferroelectric ordering are detected in our specific heat studies.
△ Less
Submitted 28 April, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
-
Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures
Authors:
Berengar Leikert,
Judith Gabel,
Matthias Schmitt,
Martin Stübinger,
Philipp Scheiderer,
Louis Veyrat,
Tien-Lin Lee,
Michael Sing,
Ralph Claessen
Abstract:
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We…
▽ More
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.
△ Less
Submitted 13 April, 2021;
originally announced April 2021.
-
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates
Authors:
E. M. Baeva,
N. A. Titova,
L. Veyrat,
B. Sacépé,
A. V. Semenov,
G. N. Goltsman,
A. I. Kardakova,
V. S. Khrapai
Abstract:
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power…
▽ More
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power per unit of area $P_{2D}$. In all samples, we observe the dependence $P_{2D}\propto T_e^n$ with the exponent $n\simeq 2$, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of $P_{2D}(T_e)$ on the length of the amorphous insulating layer is consistent with the linear $T$-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
△ Less
Submitted 18 May, 2021; v1 submitted 18 January, 2021;
originally announced January 2021.
-
A tunable Fabry-Pérot quantum Hall interferometer in graphene
Authors:
Corentin Déprez,
Louis Veyrat,
Hadrien Vignaud,
Goutham Nayak,
Kenji Watanabe,
Takashi Taniguchi,
Frédéric Gay,
Hermann Sellier,
Benjamin Sacépé
Abstract:
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that…
▽ More
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that act as electron beam-splitters provides a model system to perform Fabry-Pérot quantum Hall interferometry. We observe high-visibility Aharonov-Bohm interference free of charging effects and widely tunable through electrostatic gating or magnetic field, in remarkable agreement with theory. A coherence length of $\mathbf{10 \,μm}$ at a temperature of $0.02$ K allows us to further achieve coherently-coupled double Fabry-Pérot interferometry. Our results open a new avenue for quantum Hall interferometry and the exploitation of topological excitations for quantum computation.
△ Less
Submitted 3 May, 2021; v1 submitted 25 August, 2020;
originally announced August 2020.
-
Helical quantum Hall phase in graphene on SrTiO$_3$
Authors:
Louis Veyrat,
Corentin Déprez,
Alexis Coissard,
Xiaoxi Li,
Frédéric Gay,
Kenji Watanabe,
Takashi Taniguchi,
Zheng Vitto Han,
Benjamin A. Piot,
Hermann Sellier,
Benjamin Sacépé
Abstract:
The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitatio…
▽ More
The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.
△ Less
Submitted 4 July, 2019;
originally announced July 2019.
-
Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
Authors:
Louis Veyrat,
Anna Jordan,
Katrin Zimmermann,
Frederic Gay,
Kenji Watanabe,
Takeshi Taniguchi,
Hermann Sellier,
Benjamin Sacépé
Abstract:
We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-Pérot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the…
▽ More
We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-Pérot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the cyclotron radius equal to the npn cavity length, Fabry-Pérot resonances vanish and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction, with distortions due to the combination of confinement and de-confinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations.
△ Less
Submitted 2 December, 2018; v1 submitted 26 June, 2018;
originally announced June 2018.
-
Joule overheating poisons the fractional ac Josephson effect in topological Josephson junctions
Authors:
K. Le Calvez,
L. Veyrat,
F. Gay,
P. Plaindoux,
C. Winkelmann,
H. Courtois,
B. Sacépé
Abstract:
Topological Josephson junctions designed on the surface of a 3D-topological insulator (TI) harbor Majorana bound states (MBS's) among a continuum of conventional Andreev bound states. The distinct feature of these MBS's lies in the $4π$-periodicity of their energy-phase relation that yields a fractional ac Josephson effect and a suppression of odd Shapiro steps under $r\!f$ irradiation. Yet, recen…
▽ More
Topological Josephson junctions designed on the surface of a 3D-topological insulator (TI) harbor Majorana bound states (MBS's) among a continuum of conventional Andreev bound states. The distinct feature of these MBS's lies in the $4π$-periodicity of their energy-phase relation that yields a fractional ac Josephson effect and a suppression of odd Shapiro steps under $r\!f$ irradiation. Yet, recent experiments showed that a few, or only the first, odd Shapiro steps are missing, casting doubts on the interpretation. Here, we show that Josephson junctions tailored on the large bandgap 3D TI Bi$_2$Se$_3$ exhibit a fractional ac Josephson effect acting on the first Shapiro step only. With a modified resistively shunted junction model, we demonstrate that the resilience of higher order odd Shapiro steps can be accounted for by thermal poisoning driven by Joule overheating. Furthermore, we uncover a residual supercurrent at the nodes between Shapiro lobes, which provides a direct and novel signature of the current carried by the MBS. Our findings showcase the crucial role of thermal effects in topological Josephson junctions and lend support to the Majorana origin of the partial suppression of odd Shapiro steps.
△ Less
Submitted 22 October, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
-
Enhanced transport length of spin-helical Dirac fermions in disordered 3D topological insulators
Authors:
J. Dufouleur,
L. Veyrat,
B. Dassonneville,
C. Nowka,
S. Hampel,
P. Leksin,
B. Eichler,
O. G. Schmidt,
B. Büchner,
R. Giraud
Abstract:
The transport length $l_\textrm{tr}$ and the mean free path $l_\textrm{e}$ are experimentally determined for bulk and surface states in a Bi$_2$Se$_3$ nanoribbon by quantum transport and transconductance measurements. We show that the anisotropic scattering of spin-helical Dirac fermions results in a strong enhancement of $l_\textrm{tr}$, which confirms theoretical predictions \cite{Culcer2010}. D…
▽ More
The transport length $l_\textrm{tr}$ and the mean free path $l_\textrm{e}$ are experimentally determined for bulk and surface states in a Bi$_2$Se$_3$ nanoribbon by quantum transport and transconductance measurements. We show that the anisotropic scattering of spin-helical Dirac fermions results in a strong enhancement of $l_\textrm{tr}$, which confirms theoretical predictions \cite{Culcer2010}. Despite strong disorder ($l_\textrm{e}\approx30$~nm), our result further points to the long-range nature of the scattering potential, giving a large ratio $l_\textrm{tr}/l_\textrm{e}\approx8$ that is likely limited by a finite bulk/surface coupling. This suggests that the spin-flip length could reach the micron size in disordered 3D topological insulator nanostructures with a reduced bulk do**, even if due to charge compensation.
△ Less
Submitted 21 January, 2016; v1 submitted 14 December, 2015;
originally announced December 2015.
-
Spatial competition of the ground states in 1111 iron pnictides
Authors:
G. Lang,
L. Veyrat,
U. Graefe,
F. Hammerath,
D. Paar,
G. Behr,
S. Wurmehl,
H. -J. Grafe
Abstract:
Using nuclear quadrupole resonance, the phase diagram of 1111 $R$FeAsO$_{1-x}$F$_x$ ($R$$=$La, Ce, Sm) iron pnictides is constructed as a function of the local charge distribution in the paramagnetic state, which features low-do**-like (LD-like) and high-do**-like (HD-like) regions. Compounds based on magnetic rare earths (Ce, Sm) display a unified behavior, and comparison with La-based compou…
▽ More
Using nuclear quadrupole resonance, the phase diagram of 1111 $R$FeAsO$_{1-x}$F$_x$ ($R$$=$La, Ce, Sm) iron pnictides is constructed as a function of the local charge distribution in the paramagnetic state, which features low-do**-like (LD-like) and high-do**-like (HD-like) regions. Compounds based on magnetic rare earths (Ce, Sm) display a unified behavior, and comparison with La-based compounds reveals the detrimental role of static iron $3d$ magnetism on superconductivity, as well as a qualitatively different evolution of the latter at high do**. It is found that the LD-like regions fully account for the orthorhombicity of the system, and are thus the origin of any static iron magnetism. Orthorhombicity and static magnetism are not hindered by superconductivity but limited by dilution effects, in agreement with 2D (respectively 3D) nearest-neighbor square lattice site percolation when the rare earth is nonmagnetic (respectively magnetic). The LD-like regions are not intrinsically supportive of superconductivity, on the contrary of the HD-like regions, as evidenced by the well-defined Uemura relation between the superconducting transition temperature and the superfluid density when accounting for the proximity effect. This leads us to propose a complete description of the interplay of ground states in 1111 pnictides, where nanoscopic regions compete to establish the ground state through suppression of superconductivity by static magnetism, and extension of superconductivity by proximity effect.
△ Less
Submitted 26 August, 2015;
originally announced August 2015.
-
Band bending inversion in Bi$_2$Se$_3$ nanostructures
Authors:
Louis Veyrat,
Fabrice Iacovella,
Joseph Dufouleur,
Christian Nowka,
Hannes Funke,
Ming Yang,
Walter Escoffier,
Michel Goiran,
Bernd Buechner,
Silke Hampel,
Romain Giraud
Abstract:
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensiona…
▽ More
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface do**. These results highlight the need to control electrical do** both in the bulk and at interfaces in order to study only topological surface states.
△ Less
Submitted 8 August, 2015;
originally announced August 2015.
-
Pseudo-ballistic transport in 3D topological insulator quantum wires
Authors:
Joseph Dufouleur,
Louis Veyrat,
Emmanouil Xypakis,
Jens H. Bardarson,
Christian Nowka,
Silke Hampel,
Barbara Eichler,
Oliver G. Schmidt,
Bernd Büchner,
Romain Giraud
Abstract:
Quantum conductance fluctuations are investigated in disordered 3D topological insulator quantum wires. Both experiments and theory reveal a new transport regime in a mesoscopic conductor, pseudo-ballistic transport, for which ballistic properties persist beyond the transport mean free path, characteristic of diffusive transport. It results in non-universal conductance fluctuations due to quasi-1D…
▽ More
Quantum conductance fluctuations are investigated in disordered 3D topological insulator quantum wires. Both experiments and theory reveal a new transport regime in a mesoscopic conductor, pseudo-ballistic transport, for which ballistic properties persist beyond the transport mean free path, characteristic of diffusive transport. It results in non-universal conductance fluctuations due to quasi-1D surface modes, as observed in long and narrow Bi$_2$Se$_3$ nanoribbons. Spin helical Dirac fermions in quantum wires retain pseudo-ballistic properties over an unusually broad energy range, due to strong quantum confinement and weak momentum scattering.
△ Less
Submitted 29 April, 2015;
originally announced April 2015.
-
Quasi-ballistic transport of Dirac fermions in a Bi2Se3 nanowire
Authors:
J. Dufouleur,
L. Veyrat,
A. Teichgraeber,
S. Neuhaus,
C. Nowka,
S. Hampel,
J. Cayssol,
J. Schumann,
B. Eichler,
O. Schmidt,
B. Buechner,
R. Giraud
Abstract:
Quantum coherent transport of Dirac fermions in a mesoscopic nanowire of the 3D topological insulator Bi2Se3 is studied in the weak-disorder limit. At very low temperatures, many harmonics are evidenced in the Fourier transform of Aharonov-Bohm oscillations, revealing the long phase-coherence length of surface states. Remarkably, from their exponential temperature dependence, we infer an unusual 1…
▽ More
Quantum coherent transport of Dirac fermions in a mesoscopic nanowire of the 3D topological insulator Bi2Se3 is studied in the weak-disorder limit. At very low temperatures, many harmonics are evidenced in the Fourier transform of Aharonov-Bohm oscillations, revealing the long phase-coherence length of surface states. Remarkably, from their exponential temperature dependence, we infer an unusual 1/T power law for the phase coherence length. This decoherence is typical for quasi-ballistic fermions weakly coupled to the dynamics of their environment.
△ Less
Submitted 12 December, 2012; v1 submitted 30 November, 2012;
originally announced November 2012.
-
Structural and electronic phase diagrams of CeFeAsO1-xFx and SmFeAsO1-xFx
Authors:
Hemke Maeter,
Jorge Enrique Hamann Borrero,
Til Goltz,
Johannes Spehling,
Andrej Kwadrin,
Agnieszka Kondrat,
Louis Veyrat,
Guillaume Lang,
Hans-Joachim Grafe,
Christian Hess,
Günter Behr,
Bernd Büchner,
Hubertus Luetkens,
Chris Baines,
Alex Amato,
Norman Leps,
Rüdiger Klingeler,
Ralf Feyerherm,
Dimitri Argyriou,
Hans-Henning Klauss
Abstract:
We have studied the structural and electronic phase diagrams of CeFeAsO1-xFx and SmFeAsO1-xFx by a detailed analysis of muon spin relaxation experiments, synchrotron X-ray diffraction, Mössbauer spectroscopy, electrical resistivity, specific heat, and magnetic susceptibility measurements (Full abstract in the main document).
We have studied the structural and electronic phase diagrams of CeFeAsO1-xFx and SmFeAsO1-xFx by a detailed analysis of muon spin relaxation experiments, synchrotron X-ray diffraction, Mössbauer spectroscopy, electrical resistivity, specific heat, and magnetic susceptibility measurements (Full abstract in the main document).
△ Less
Submitted 25 October, 2012;
originally announced October 2012.
