Large spin to charge conversion in topological superconductor \b{eta}-PdBi2 at room temperature
Authors:
Yang Li,
Shi-jia Yang,
Dali Sun,
Yun-bin Sun,
Yan Li,
Eric Vetter,
Rui Sun,
Na Li,
Xu Yang,
Lei Su,
Zi-zhao Gong,
Zong-kai Xie,
Jian-jun Zhao,
Wei He,
Xiang-qun Zhang,
Zhao-hua Cheng
Abstract:
\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on investigating its topological surface states, the coupling between spin and charge degrees of freedom in this class of quantum material remains unexplored. Her…
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\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on investigating its topological surface states, the coupling between spin and charge degrees of freedom in this class of quantum material remains unexplored. Here we first report a study of spin-to-charge conversion in a \b{eta}-PdBi2 ultrathin film grown by molecular beam epitaxy, utilizing a spin pum** technique to perform inverse spin Hall effect measurements. We find that the room temperature spin Hall angle of Fe/\b{eta}-PdBi2, θ_SH=0.037. This value is one order of magnitude larger than that of reported conventional superconductors, and is comparable to that of the best SOC metals and topological insulators. Our results provide an avenue for develo** superconductor-based spintronic applications.
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Submitted 16 July, 2020;
originally announced July 2020.
Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
Authors:
Mei Fang,
Sangjian Zhang,
Wenchao Zhang,
Lu Jiang,
Eric Vetter,
Ho Nyung Lee,
Xiaoshan Xu,
Dali Sun,
Jian Shen
Abstract:
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. He…
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Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electro-resistance and tunneling magnetoresistance, respectively. The nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions arising from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of "mixed" ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs, paving the way for multifunctional device applications.
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Submitted 4 October, 2019;
originally announced October 2019.
