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Electrical control of valley polarized charged biexcitons in monolayer WS$_2$
Authors:
Sarthak Das,
Ding Huang,
Ivan Verzhbitskiy,
Zi-En Ooi,
Chit Siong Lau,
Rainer Lee,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh
Abstract:
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical do**. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of mon…
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Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical do**. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of monolayer tungsten disulfide, achieving up to a sixfold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the quinton photoluminescence remains stable, even with increased scattering from electron do**. By exciting at the exciton resonances, we observed the reproducible non-monotonic switching of the charged state population as the electron do** is varied under gate bias, indicating a coherent interplay between neutral and charged exciton states.
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Submitted 15 April, 2024;
originally announced April 2024.
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Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
Authors:
Chit Siong Lau,
Sarthak Das,
Ivan A. Verzhbitskiy,
Ding Huang,
Yiyu Zhang,
Teymour Talha-Dean,
Yiyu Zhang,
Wei Fu,
Dasari Venkatakrishnarao,
Kuan Eng Johnson Goh
Abstract:
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications Conventional dielectric integration techniques for bulk semiconductors are difficult t…
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Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Submitted 4 February, 2024;
originally announced February 2024.
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Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Authors:
Thasneem Aliyar,
Hongyang Ma,
Radha Krishnan,
Gagandeep Singh,
Bi Qi Chong,
Yitao Wang,
Ivan Verzhbitskiy,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Ze Xiang Shen,
Teck Seng Koh,
Rajib Rahman,
Bent Weber
Abstract:
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. S…
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Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic map** of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.
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Submitted 20 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Authors:
Teymour Talha-Dean,
Yaoju Tarn,
Subhrajit Mukherjee,
John Wellington John,
Ding Huang,
Ivan A. Verzhbitskiy,
Dasari Venkatakrishnarao,
Sarthak Das,
Rainer Lee,
Abhishek Mishra,
Shuhua Wang,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport phy…
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Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport physics. Conventional cleaning processes are inefficient and can cause material and device damage. Here, we show that thermal scanning probe based cleaning can effectively eliminate resist residue to recover pristine material surfaces. Our technique is compatible at both the material- and device-level, and we demonstrate the significant improvement in the electrical performance of 2D WS2 transistors. We also demonstrate the cleaning of van der Waals heterostructures to achieve interfaces with low disorder. This enables the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunnelling regime. Such material processing advances are crucial for constructing high-quality vdW heterostructures that are important platforms for fundamental studies and building blocks for quantum and nano-electronics applications.
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Submitted 2 February, 2024;
originally announced February 2024.
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Spin-glass states generated in a van der Waals magnet by alkali-ion intercalation
Authors:
S. Khan,
E. S. Y. Aw,
L. A. V. Nagle-Cocco,
A. Sud,
S. Ghosh,
M. K. B. Subhan,
Z. Xue,
C. Freeman,
D. Sagkovits,
A. Gutierrez-Llorente,
I. Verzhbitskiy,
D. M. Arroo,
C. W. Zollitsch,
G. Eda,
E. J. G. Santos,
S. E. Dutton,
S. T. Bramwell,
C. A. Howard,
H. Kurebayashi
Abstract:
Tuning magnetic properties in layered van der Waals (vdW) materials has captured a significant attention due to the efficient control of ground-states by heterostructuring and external stimuli. Electron do** by electrostatic gating, interfacial charge transfer and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie tempe…
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Tuning magnetic properties in layered van der Waals (vdW) materials has captured a significant attention due to the efficient control of ground-states by heterostructuring and external stimuli. Electron do** by electrostatic gating, interfacial charge transfer and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie temperature ($T_{\text{C}}$) and magnetic anisotropy. Here, we discover an uncharted role of intercalation to generate magnetic frustration. As a model study, we intercalate Na atoms into the vdW gaps of pristine Cr$_2$Ge$_2$Te$_6$ (CGT) where generated magnetic frustration leads to emerging spin-glass states coexisting with a ferromagnetic order. A series of dynamic magnetic susceptibility measurements/analysis confirms the formation of magnetic clusters representing slow dynamics with a distribution of relaxation times. The intercalation also modifies other macroscopic physical parameters including the significant enhancement of $T_{\text{C}}$ from 66\,K to 240\,K and the switching of magnetic easy-hard axis direction. Our study identifies intercalation as a unique route to generate emerging frustrated spin states in simple vdW crystals.
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Submitted 29 June, 2024; v1 submitted 29 December, 2023;
originally announced December 2023.
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Laser-induced topological spin switching in a 2D van der Waals magnet
Authors:
Maya Khela,
Maciej Dabrowski,
Safe Khan,
Paul S. Keatley,
Ivan Verzhbitskiy,
Goki Eda,
Robert J. Hicken,
Hidekazu Kurebayashi,
Elton J. G. Santos
Abstract:
Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. Of particular interest is the control of the magnetic properties of 2D materials by femtosecond laser pulses which can provide a real path for low-power consumption device platforms i…
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Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. Of particular interest is the control of the magnetic properties of 2D materials by femtosecond laser pulses which can provide a real path for low-power consumption device platforms in data storage industries. However, little is known about the interplay between light and spin properties in vdW layers. Here, combining large-scale spin dynamics simulations including biquadratic exchange interactions and wide-field Kerr microscopy (WFKM), we show that ultrafast laser excitation can not only generate different type of spin textures in CrGeTe$_3$ vdW magnets but also induce a reversible transformation between them in a toggle-switch mechanism. Our calculations show that skyrmions, anti-skyrmions, skyrmioniums and stripe domains can be generated via high-intense laser pulses within the picosecond regime. The effect is tunable with the laser energy where different spin behaviours can be selected, such as fast demagnetisation process ($\sim$250 fs) important for information technologies. The phase transformation between the different topological spin textures is obtained as additional laser pulses are applied to the system where the polarisation and final state of the spins can be controlled by external magnetic fields. We experimentally confirmed the creation, manipulation and toggle switching phenomena in CrGeTe$_3$ due to the unique aspect of laser-induced heating of electrons. Our results indicate laser-driven spin textures on 2D magnets as a pathway towards ultrafast reconfigurable architecture at the atomistic level.
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Submitted 14 February, 2023;
originally announced February 2023.
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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
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Probing spin dynamics of ultra-thin van der Waals magnets via photon-magnon coupling
Authors:
Christoph W. Zollitsch,
Safe Khan,
Vu Thanh Trung Nam,
Ivan A. Verzhbitskiy,
Dimitrios Sagkovits,
James O'Sullivan,
Oscar W. Kennedy,
Mara Strungaru,
Elton J. G. Santos,
John J. L. Morton,
Goki Eda,
Hidekazu Kurebayashi
Abstract:
Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical…
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Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical excitation and detection, achieving spin wave control with microwaves is highly desirable, as modern integrated information technologies predominantly are operated with these. The intrinsically small numbers of spins, however, poses a major challenge to this.
Here, we present a hybrid approach to detect spin dynamics mediated by photon-magnon coupling between high-Q superconducting resonators and ultra-thin flakes of Cr$_2$Ge$_2$Te$_6$ (CGT) as thin as 11\,nm. We test and benchmark our technique with 23 individual CGT flakes and extract an upper limit for the Gilbert dam** parameter. These results are crucial in designing on-chip integrated circuits using vdW magnets and offer prospects for probing spin dynamics of monolayer vdW magnets.
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Submitted 28 April, 2023; v1 submitted 6 June, 2022;
originally announced June 2022.
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Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2
Authors:
Yaze Wu,
Ibrahim Abdelwahab,
Ki Chang Kwon,
Ivan Verzhbitskiy,
Lin Wang,
Weng Heng Liew,
Kui Yao,
Goki Eda,
Kian ** Loh,
Lei Shen,
Su Ying Quek
Abstract:
Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical an…
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Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices.
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Submitted 2 February, 2022;
originally announced February 2022.
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Mode-center Placement of Monolayer WS$_{2}$ in a Photonic Polymer Waveguide
Authors:
Angelina Frank,
Justin Zhou,
James A. Grieve,
Ivan Verzhbitskiy,
José Viana-Gomes,
Leyi Loh,
Michael Schmid,
Kenji Watanabe,
Takashi Taniguchi,
Goki Eda,
Alexander Ling
Abstract:
Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simul…
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Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simulations and collection of photoluminescence from the guided mode indicate that this system exhibits significantly improved waveguide-emitter coupling over a previous elastomer platform. This is facilitated by the platform's enhanced refractive-index contrast and a new method for mode-center integration of the coupled TMD. The integration is based on a simple dry-transfer process that is applicable to other 2D materials, and the platform's elastomeric nature is a natural fit to explore strain-tunable hybrid-photonic devices. The demonstrated ability of coupling photoluminescence to a polymer waveguide opens up new possibilities for hybrid-photonic systems in a variety of contexts.
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Submitted 23 July, 2021;
originally announced July 2021.
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Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors
Authors:
Eric Linardy,
Dinesh Yadav,
Daniele Vella,
Ivan A. Verzhbitskiy,
Kenji Watanabe,
Takashi Taniguchi,
Fabian Pauly,
Maxim Trushin,
Goki Eda
Abstract:
Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal d…
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Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.
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Submitted 18 April, 2020;
originally announced April 2020.
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Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating
Authors:
Ivan. A. Verzhbitskiy,
Hidekazu Kurebayashi,
Haixia Cheng,
Jun Zhou,
Safe Khan,
Yuan ** Feng,
Goki Eda
Abstract:
Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$…
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Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$ $10^{14}$ cm$^{-2}$) CGT in an electric double-layer transistor device is found to exhibit hysteresis in magnetoresistance (MR), a clear signature of ferromagnetism, at temperatures up to above 200 K, which is significantly higher than the known Curie temperature of 61 K for an undoped material. Additionally, angle-dependent MR measurements reveal that the magnetic easy axis of this new ground state lies within the layer plane in stark contrast to the case of undoped CGT, whose easy axis points in the out-of-plane direction. We propose that significant do** promotes double-exchange mechanism mediated by free carriers, prevailing over the superexchange mechanism in the insulating state. Our findings highlight that electrostatic gating of this class of materials allows not only charge flow switching but also magnetic phase switching, evidencing their potential for spintronics applications.
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Submitted 28 January, 2020;
originally announced January 2020.
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Measuring valley polarization in two-dimensional materials with second-harmonic spectroscopy
Authors:
Yi Wei Ho,
Henrique Guimarães Rosa,
Ivan Verzhbitskiy,
Manuel Jose de Lima Ferreira Rodrigues,
Takashi Taniguchi,
Kenji Watanabe,
Goki Eda,
Vitor Manuel Pereira,
José Carlos Viana Gomes
Abstract:
A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimens…
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A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimensional crystals, which include graphene-based systems and the family of transition metal dichalcogenides, and provide a direct experimental demonstration using a 2H-MoSe$_{2}$ monolayer at room temperature. We deliberately use the simplest possible setup, where a single pulsed laser beam simultaneously controls the valley imbalance and tracks the SHG process. We further developed a model of the transient population dynamics which analytically describes the valley-induced SHG rotation in very good agreement with the experiment. In addition to providing the first experimental demonstration of the effect, this work establishes a conceptually simple, com-pact and transferable way of measuring instantaneous valley polarization, with direct applicability in the nascent field of valleytronics.
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Submitted 4 December, 2019; v1 submitted 4 March, 2019;
originally announced March 2019.
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A spin dynamics study in layered van der Waals single crystal, Cr$_2$Ge$_2$Te$_6$
Authors:
S. Khan,
C. W. Zollitsch,
D. M. Arroo,
H. Cheng,
I. Verzhbitskiy,
A. Sud,
Y. P. Feng,
G. Eda,
H. Kurebayashi
Abstract:
We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is…
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We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is extracted and compared with the saturation magnetisation, when normalised with their low temperature values. The ratios show a clear temperature dependence when plotted in the logarithmic scale, which departs from the predicted Callen-Callen power law fit of a straight line, where the scaling exponent \textit{n}, $K_{u}(T) \propto [M_s(T)/M_s(2$ K$)]^n$, contradicts the expected value of 3 for uniaxial anisotropy. Additionally, the spectroscopic g-factor for both the magnetic easy - and hard - axis exhibits a temperature dependence, with an inversion between 20 K and 30 K, suggesting an influence by orbital angular momentum. Finally, we qualitatively discuss the observation of multi-domain resonance phenomena in the FMR spectras, at magnetic fields below the saturation magnetisation.
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Submitted 25 August, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Suppressed out-of-plane polarizability of free excitons in monolayer WSe$_{2}$
Authors:
Ivan A. Verzhbitskiy,
Daniele Vella,
Kenji Watanabe,
Takashi Taniguchi,
Goki Eda
Abstract:
Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe$_{2}$ in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free and bound exciton photoluminescence peaks with increasing electric fields at a constant…
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Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe$_{2}$ in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free and bound exciton photoluminescence peaks with increasing electric fields at a constant carrier density, carefully compensating for unintentional photodo** in our double-gated device at 4K. We show that the Stark shift is < 0.4 meV despite the large electric fields applied, yielding an upper limit of polarizability α$_{z}$ to be ~ 10$^{-11}$ Dm/V. Such a small polarizability, which is nearly two orders of magnitude smaller than the previously reported value for MoS$_{2}$, indicates strong atomic confinement of electrons in this 2D system and highlights the unusual robustness of free excitons against surface potential fluctuations.
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Submitted 3 December, 2018;
originally announced December 2018.
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Elastomeric waveguide on-chip coupling of an encapsulated MoS$_2$ monolayer
Authors:
Filip Auksztol,
Daniele Vella,
Ivan Verzhbitskiy,
Kian Fong Ng,
Yi Wei Ho,
James A Grieve,
José Viana-Gomes,
Goki Eda,
Alexander Ling
Abstract:
We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates ad…
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We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates addressing of the 2D material flake by pum** it with polarised laser light and gathering polarisation-resolved photoluminescence spectra with the extinction ratio of 31, which highlights the potential for selection-rule dependent measurements. Our results demonstrate improved handling of the material and experimental simplification compared to other techniques. Furthermore, inherent elasticity of the host provides an avenue for direct mechanical coupling to embedded materials.
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Submitted 2 March, 2019; v1 submitted 11 October, 2018;
originally announced October 2018.
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Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
Authors:
Henrique G. Rosa,
Ho Yi Wei,
Ivan Verzhbitskiy,
Manuel J. F. L. Rodrigues,
Takashi Taniguchi,
Kenji Watanabe,
Goki Eda,
Vitor M. Pereira,
Jose C. V. Gomes
Abstract:
We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe…
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We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe$_{2}$. We register a value of $|χ_{s}^{(3)}| \approx$ 0.91 $\times$ 10$^{-28}$ m$^{3}$ V$^{-2}$ at a fundamental excitation frequency of $\hbarω$ = 0.8 eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded second-harmonic susceptibility is found to be $|χ_{s}^{(2)}| \approx$ 0.70 $\times$ 10$^{-19}$ m$^{2}$ V$^{-1}$ in very good agreement on the order of magnitude with recent reports for WSe$_{2}$, which asserts the robustness of our values for $|χ_{s}^{(3)}|$.
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Submitted 4 January, 2019; v1 submitted 5 March, 2018;
originally announced March 2018.
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Raman fingerprints of atomically precise graphene nanoribbons
Authors:
Ivan A. Verzhbitskiy,
Marzio De Corato,
Alice Ruini,
Elisa Molinari,
Akimitsu Narita,
Yunbin Hu,
Matthias Georg Schwab,
M. Bruna,
D. Yoon,
S. Milana,
Xinliang Feng,
Klaus Müllen,
Andrea C. Ferrari,
Cinzia Casiraghi,
Deborah Prezzi
Abstract:
Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is parti…
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Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.
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Submitted 13 May, 2016;
originally announced May 2016.
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Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects
Authors:
Bo Liu,
Weijie Zhao,
Zi**g Ding,
Ivan Verzhbitskiy,
Linjun Li,
Junpeng Lu,
Jianyi Chen,
Goki Eda,
Kian ** Loh
Abstract:
Intrinsic electrical and excitonic properties of monolayer transition metal dichalcogenides are studied on CYTOP fluoropolymer substrates with greatly suppressed unintentional do** and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid states backdates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between…
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Intrinsic electrical and excitonic properties of monolayer transition metal dichalcogenides are studied on CYTOP fluoropolymer substrates with greatly suppressed unintentional do** and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid states backdates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandage renormalization, Pauli blocking and carrier screening against carrier do**.
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Submitted 26 April, 2016;
originally announced April 2016.
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Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
Authors:
Daichi Kozawa,
Alexandra Carvalho,
Ivan Verzhbitskiy,
Francesco Giustiniano,
Yuhei Miyauchi,
Shinichiro Mouri,
A. H. Castro Neto,
Kazunari Matsuda,
Goki Eda
Abstract:
Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transitio…
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Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.
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Submitted 28 June, 2016; v1 submitted 6 September, 2015;
originally announced September 2015.
