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Bulk and sub-surface donor bound excitons in silicon under electric fields
Authors:
Rajib Rahman,
Jan Verduijn,
Yu Wang,
Chunming Yin,
Gabriele De Boo,
Gerhard Klimeck,
Sven Rogge
Abstract:
The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to the experimentally measured value of 1150 meV in bulk, and show how the transition energy and transition probability can change with applied fields and proximi…
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The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to the experimentally measured value of 1150 meV in bulk, and show how the transition energy and transition probability can change with applied fields and proximity to surfaces, mimicking the conditions of realistic devices. The spin-resolved transition energy from a neutral donor state (D$^0$) to D$^0$X depends on the three-particle Coulomb energy, and the interface and electric field induced hyperfine splitting and heavy-hole-light-hole splitting. Although the Coulomb energy decreases as a result of Stark shift, the spatial separation of the electron and hole wavefunctions by the field also reduces the transition dipole. A bulk-like D$^0$X dissociates abruptly at a modest electric field, while a D$^0$X at a donor close to an interface undergoes a gradual ionization process. Our calculations take into account the full bandstructure of silicon and the full energy spectrum of the donor including spin directly in the atomic orbital basis and treat the three-particle Coulomb interaction self-consistently to provide quantitative guidance to experiments aiming to realize hybrid opto-electric techniques for addressing donor qubits.
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Submitted 30 September, 2015;
originally announced October 2015.
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Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
Authors:
Samuel J. Hile,
Matthew G. House,
Eldad Peretz,
Jan Verduijn,
Daniel Widmann,
Takashi Kobayashi,
Sven Rogge,
Michelle Y. Simmons
Abstract:
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate bet…
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We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.
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Submitted 10 September, 2015;
originally announced September 2015.
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Radio-frequency dispersive detection of donor atoms in a field-effect transistor
Authors:
J. Verduijn,
M. Vinet,
S. Rogge
Abstract:
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only' read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easi…
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Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only' read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.
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Submitted 13 March, 2014; v1 submitted 11 December, 2013;
originally announced December 2013.
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Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system
Authors:
R. R. Agundez,
J. Verduijn,
S. Rogge,
M. Blaauboer
Abstract:
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory, and derive the conductance in the form of a Fano expression, which depends on the mean field parameters. We predict that in the Kondo regime the…
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We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory, and derive the conductance in the form of a Fano expression, which depends on the mean field parameters. We predict that in the Kondo regime the magnetic field leads to a gapped energy level spectrum due to hybridisation of the non-interacting QD state and the Kondo state, and can quantum-mechanically alter the electron's path preference. We demonstrate that an abrupt symmetry change in the Fano resonance, as seen experimentally, could be a consequence of an underlying Kondo channel.
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Submitted 17 January, 2013;
originally announced January 2013.
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Non-local coupling of two donor-bound electrons
Authors:
J. Verduijn,
R. R. Agundez,
M. Blaauboer,
S. Rogge
Abstract:
We report the results of an experiment investigating coherence and correlation effects in a system of coupled donors. Two donors are strongly coupled to two leads in a parallel configuration within a nano-wire field effect transistor. By applying a magnetic field we observe interference between two donor-induced Kondo channels, which depends on the Aharonov-Bohm phase picked up by electrons traver…
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We report the results of an experiment investigating coherence and correlation effects in a system of coupled donors. Two donors are strongly coupled to two leads in a parallel configuration within a nano-wire field effect transistor. By applying a magnetic field we observe interference between two donor-induced Kondo channels, which depends on the Aharonov-Bohm phase picked up by electrons traversing the structure. This results in a non-monotonic conductance as a function of magnetic field and clearly demonstrates that donors can be coupled through a many-body state in a coherent manner. We present a model which shows good qualitative agreement with our data. The presented results add to the general understanding of interference effects in a donor-based correlated system which may allow to create artificial lattices that exhibit exotic many-body excitations.
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Submitted 21 May, 2013; v1 submitted 21 September, 2012;
originally announced September 2012.
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Dopant metrology in advanced FinFETs
Authors:
G. P. Lansbergen,
R. Rahman,
G. C. Tettamanzi,
J. Verduijn,
L. C. L. Hollenberg,
G. Klimeck,
S. Rogge
Abstract:
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth belo…
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Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
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Submitted 17 November, 2011;
originally announced November 2011.
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Balanced ternary addition using a gated silicon nanowire
Authors:
J. A. Mol,
J. van der Heijden,
J. Verduijn,
M. Klein,
F. Remacle,
S. Rogge
Abstract:
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Map** logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform c…
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We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Map** logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform complex, inherently ternary operations, on a single transistor.
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Submitted 29 August, 2011;
originally announced August 2011.
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Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
Authors:
R. Rahman,
G. P. Lansbergen,
J. Verduijn,
G. C. Tettamanzi,
S. H. Park,
N. Collaert,
S. Biesemans,
G. Klimeck,
L. C. L. Hollenberg,
S. Rogge
Abstract:
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, a…
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We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.
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Submitted 13 July, 2011;
originally announced July 2011.
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Engineered valley-orbit splittings in quantum confined nanostructures in silicon
Authors:
R. Rahman,
J. Verduijn,
N. Kharche,
G. P. Lansbergen,
G. Klimeck,
L. C. L. Hollenberg,
S. Rogge
Abstract:
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the…
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An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate VO splitting experimentally and theoretically in a range of confinement regimes. We report measurements of the VO splitting in silicon quantum dot and donor devices through excited state transport spectroscopy. These results are underpinned by large-scale atomistic tight-binding calculations involving over 1 million atoms to compute VO splittings as functions of electric fields, donor depths, and surface disorder. The results provide a comprehensive picture of the range of VO splittings that can be achieved through quantum engineering.
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Submitted 25 February, 2011;
originally announced February 2011.
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Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
Authors:
G. C. Tettamanzi,
J. Verduijn,
G. P. Lansbergen,
M. Blaauboer,
M. J. Calderón,
R. Aguado,
S. Rogge
Abstract:
Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many bo…
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Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many body state that forms a spin as well as orbital singlet by virtual exchange with the leads, to a pure SU(2) orbital ground state, as a function of magnetic field. The small size and the s-like orbital symmetry of the ground state of the dopant, make it a model system in which the magnetic field only couples to the spin degree of freedom and allows for observation of this SU(4) to SU(2) transition.
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Submitted 13 December, 2011; v1 submitted 15 February, 2011;
originally announced February 2011.
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Lifetime enhanced transport in silicon due to spin and valley blockade
Authors:
G. P. Lansbergen,
R. Rahman,
J. Verduijn,
G. C. Tettamanzi,
N. Collaert,
S. Biesemans,
G. Klimeck,
L. C. L. Hollenberg,
S. Rogge
Abstract:
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) config…
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We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.
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Submitted 19 July, 2011; v1 submitted 8 August, 2010;
originally announced August 2010.
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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Authors:
B. C. Johnson,
G. C. Tettamanzi,
A. D. C. Alves,
S. Thompson,
C. Yang,
J. Verduijn,
J. A. Mol,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. Rogge,
D. N. Jamieson
Abstract:
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** proc…
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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stop** is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stop** is dominant leading to discrete decreases in drain current.
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Submitted 29 July, 2010;
originally announced July 2010.
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Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
Authors:
M. J. Calderon,
J. Verduijn,
G. P. Lansbergen,
G. C. Tettamanzi,
S. Rogge,
Belita Koiller
Abstract:
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small chargi…
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Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.
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Submitted 7 May, 2010;
originally announced May 2010.
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Thermionic Emission as a tool to study transport in undoped nFinFETs
Authors:
Giuseppe C. Tettamanzi,
Abhijeet Paul,
Gabriel P. Lansbergen,
Jan Verduijn,
Sunhee Lee,
Nadine Collaert,
Serge Biesemans,
Gerhard Klimeck,
Sven Rogge
Abstract:
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming…
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Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics.
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Submitted 29 March, 2010;
originally announced March 2010.
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Coherent transport through a double donor system in silicon
Authors:
J. Verduijn,
G. C. Tettamanzi,
G. P. Lansbergen,
N. Collaert,
S. Biesemans,
S. Rogge
Abstract:
Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be…
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Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic field, in full analogy to the Aharonov-Bohm effect.
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Submitted 11 December, 2009;
originally announced December 2009.
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Tunable Kondo effect in a single donor atom
Authors:
G. P. Lansbergen,
G. C. Tettamanzi,
J. Verduijn,
N. Collaert,
S. Biesemans,
M. Blaauboer,
S. Rogge
Abstract:
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hither…
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The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the regular spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2)- to an SU(4) -configuration.
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Submitted 30 September, 2009;
originally announced September 2009.
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Orbital Stark effect and quantum confinement transition of donors in silicon
Authors:
Rajib Rahman,
G. P. Lansbergen,
Seung H. Park,
J. Verduijn,
Gerhard Klimeck,
S. Rogge,
Lloyd C. L. Hollenberg
Abstract:
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here we present the…
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Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here we present the full theoretical model involving large-scale quantum mechanical simulations that was used to compute the Stark shifted donor states in order to interpret the experimental data. Use of atomistic tight-binding technique on a domain of over a million atoms helped not only to incorporate the full band structure of the host, but also to treat realistic device geometries and donor models, and to use a large enough basis set to capture any number of donor states. The method yields a quantitative description of the symmetry transition that the donor electron undergoes from a 3D Coulomb confined state to a 2D surface state as the electric field is ramped up adiabatically. In the intermediate field regime, the electron resides in a superposition between the states of the atomic donor potential and that of the quantum dot like states at the surface. In addition to determining the effect of field and donor depth on the electronic structure, the model also provides a basis to distinguish between a phosphorus and an arsenic donor based on their Stark signature. The method also captures valley-orbit splitting in both the donor well and the interface well, a quantity critical to silicon qubits. The work concludes with a detailed analysis of the effects of screening on the donor spectrum.
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Submitted 28 April, 2009;
originally announced April 2009.
