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Non-relativistic ferromagnetotriakontadipolar order and spin splitting in hematite
Authors:
X. H. Verbeek,
D. Voderholzer,
S. Schären,
Y. Gachnang,
N. A. Spaldin,
S. Bhowal
Abstract:
We show that hematite, $α$-Fe$_2$O$_3$, below its Morin transition, has a ferroic ordering of rank-5 magnetic triakontadipoles on the Fe ions. In the absence of spin-orbit coupling, these are the lowest-order ferroically aligned magnetic multipoles, and they give rise to the $g$-wave non-relativistic spin splitting in hematite. We find that the ferroically ordered magnetic triakontadipoles result…
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We show that hematite, $α$-Fe$_2$O$_3$, below its Morin transition, has a ferroic ordering of rank-5 magnetic triakontadipoles on the Fe ions. In the absence of spin-orbit coupling, these are the lowest-order ferroically aligned magnetic multipoles, and they give rise to the $g$-wave non-relativistic spin splitting in hematite. We find that the ferroically ordered magnetic triakontadipoles result from the simultaneous antiferroic ordering of the charge hexadecapoles and the magnetic dipoles, providing a route to manipulating the magnitude and the sign of the magnetic triakontadipoles as well as the spin splitting. Furthermore, we find that both the ferroic ordering of the magnetic triakontadipoles and many of the spin-split features persist in the weak ferromagnetic phase above the Morin transition temperature.
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Submitted 17 May, 2024;
originally announced May 2024.
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On the sign of the linear magnetoelectric coefficient in Cr$_2$O$_3$
Authors:
Eric Bousquet,
Eddy Lelièvre-Berna,
Navid Qureshi,
Jian-Rui Soh,
Nicola A. Spaldin,
Andrea Urru,
Xanthe H. Verbeek,
Sophie F. Weber
Abstract:
We establish the sign of the linear magnetoelectric (ME) coefficient, $α$, in chromia, Cr$_2$O$_3$. Cr$_2$O$_3$ is the prototypical linear ME material, in which an electric (magnetic) field induces a linearly proportional magnetization (polarization), and a single magnetic domain can be selected by annealing in combined magnetic (H) and electric (E) fields. Opposite antiferromagnetic domains have…
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We establish the sign of the linear magnetoelectric (ME) coefficient, $α$, in chromia, Cr$_2$O$_3$. Cr$_2$O$_3$ is the prototypical linear ME material, in which an electric (magnetic) field induces a linearly proportional magnetization (polarization), and a single magnetic domain can be selected by annealing in combined magnetic (H) and electric (E) fields. Opposite antiferromagnetic domains have opposite ME responses, and which antiferromagnetic domain corresponds to which sign of response has previously been unclear. We use density functional theory (DFT) to calculate the magnetic response of a single antiferromagnetic domain of Cr$_2$O$_3$ to an applied in-plane electric field at 0 K. We find that the domain with nearest neighbor magnetic moments oriented away from (towards) each other has a negative (positive) in-plane ME coefficient, $α_{\perp}$, at 0 K. We show that this sign is consistent with all other DFT calculations in the literature that specified the domain orientation, independent of the choice of DFT code or functional, the method used to apply the field, and whether the direct (magnetic field) or inverse (electric field) ME response was calculated. Next, we reanalyze our previously published spherical neutron polarimetry data to determine the antiferromagnetic domain produced by annealing in combined E and H fields oriented along the crystallographic symmetry axis at room temperature. We find that the antiferromagnetic domain with nearest-neighbor magnetic moments oriented away from (towards) each other is produced by annealing in (anti-)parallel E and H fields, corresponding to a positive (negative) axial ME coefficient, $α_{\parallel}$, at room temperature. Since $α_{\perp}$ at 0 K and $α_{\parallel}$ at room temperature are known to be of opposite sign, our computational and experimental results are consistent.
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Submitted 25 September, 2023; v1 submitted 5 September, 2023;
originally announced September 2023.
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Hidden orders and (anti-)Magnetoelectric Effects in Cr$_2$O$_3$ and $α$-Fe$_2$O$_3$
Authors:
Xanthe H. Verbeek,
Andrea Urru,
Nicola A. Spaldin
Abstract:
We present ab initio calculations of hidden magnetoelectric multipolar order in Cr$_2$O$_3$ and its iron-based analogue, $α$-Fe$_2$O$_3$. First, we discuss the connection between the order of such hidden multipoles and the linear magnetoelectric effect. Next, we show the presence of hidden antiferroically-ordered magnetoelectric multipoles in both the prototypical magnetoelectric material Cr$_2$O…
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We present ab initio calculations of hidden magnetoelectric multipolar order in Cr$_2$O$_3$ and its iron-based analogue, $α$-Fe$_2$O$_3$. First, we discuss the connection between the order of such hidden multipoles and the linear magnetoelectric effect. Next, we show the presence of hidden antiferroically-ordered magnetoelectric multipoles in both the prototypical magnetoelectric material Cr$_2$O$_3$, and centrosymmetric $α$-Fe$_2$O$_3$, which has the same crystal structure as Cr$_2$O$_3$, but a different magnetic dipolar ordering. In turn, we predict anti-magnetoelectric effects, in which local magnetic dipole moments are induced in opposite directions under the application of an external electric field, to create an additional antiferromagnetic ordering. We confirm the predicted induced moments using first-principles calculations. Our results demonstrate the existence of hidden magnetoelectric multipoles leading to local linear magnetoelectric responses even in centrosymmetric materials, where a net bulk linear magnetoelectric effect is forbidden by symmetry.
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Submitted 1 March, 2023;
originally announced March 2023.
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Balanced Detection in Femtosecond X-ray Absorption Spectroscopy to Reach the Ultimate Sensitivity Limit
Authors:
W. F. Schlotter,
M. Beye,
S. Zohar,
G. Coslovich,
G. L. Dakovski,
M. -F. Lin,
Y. Liu,
A. Reid,
S. Stubbs,
P. Walter,
K. Nakahara,
P. Hart,
P. S. Miedema,
L. LeGuyader,
K. Hofhuis,
Phu Tran Phong Le,
Johan E. ten Elshof,
H. Hilgenkamp,
G. Koster,
X. H. Verbeek,
S. Smit,
M. S. Golden,
H. A. Durr,
A. Sakdinawat
Abstract:
X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth (…
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X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth ($\frac{ΔE}{E} < 0.5\%$) pulses containing $\sim 10^{10}$ photons. However, the energy contained in each pulse fluctuates thus complicating pulse by pulse efforts to quantify the number of photons. Improvements in counting the photons in each pulse have defined the state of the art for XAS sensitivity. Here we demonstrate a final step in these improvements through a balanced detection method that approaches the photon counting shot noise limit. In doing so, we obtain high quality absorption spectra from the insulator-metal transition in VO$_2$ and unlock a method to explore dilute systems, subtle processes and nonlinear phenomena with ultrafast x-rays. The method is especially beneficial for x-ray light sources where integration and averaging are not viable options to improve sensitivity.
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Submitted 24 June, 2020;
originally announced June 2020.
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Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
Authors:
Georgios Araizi-Kanoutas,
Jaap Geessinck,
Nicolas Gauquelin,
Steef Smit,
Xanthe Verbeek,
Shrawan K. Mishra,
Peter Bencok,
Christoph Schlueter,
Tien-Lin Lee,
Dileep Krishnan,
Jo Verbeeck,
Guus Rijnders,
Gertjan Koster,
Mark S. Golden
Abstract:
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation…
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We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.
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Submitted 11 September, 2019;
originally announced September 2019.
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Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study
Authors:
Phu Tran Phong Le,
Kevin Hofhuis,
Abhi Rana,
Mark Huijben,
Hans Hilgenkamp,
G. Rijnders,
A. ten Elshof,
Gertjan Koster,
Nicolas Gauquelin,
Gunnar Lumbeeck,
Christian Schlüßler-Langeheine,
Horia Popescu,
F. Fortuna,
Steef Smit,
Xanthe H. Verbeek,
Georgios Araizi-Kanoutas,
Shrawan Mishra,
Igor Vakivskyi,
Hermann A. Durr,
Mark S. Golden
Abstract:
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R…
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VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation map** in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.
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Submitted 25 January, 2019;
originally announced January 2019.
