Showing 1–42 of 42 results for author: Vera-Marun, I J

Materials for Quantum Technologies: a Roadmap for Spin and Topology

Authors: N. Banerjee, C. Bell, C. Ciccarelli, T. Hesjedal, F. Johnson, H. Kurebayashi, T. A. Moore, C. Moutafis, H. L. Stern, I. J. Vera-Marun, J. Wade, C. Barton, M. R. Connolly, N. J. Curson, K. Fallon, A. J. Fisher, D. A. Gangloff, W. Griggs, E. Linfield, C. H. Marrows, A. Rossi, F. Schindler, J. Smith, T. Thomson, O. Kazakova

Abstract: This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials systems that support spin and topological phenomena and discuss their figures of merit. Spin and topology-based quantum technologies have several advantages… ▽ More This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials systems that support spin and topological phenomena and discuss their figures of merit. Spin and topology-based quantum technologies have several advantages over their classical, charged-based counterparts, including non-volatility, faster data processing speeds, higher integration densities and lower power consumption. We discuss the main challenges facing the field, identify strategies to overcome them, and provide a realistic outlook on future possibilities of spin-based and topological materials in quantum technology applications. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: Roadmap of the UKRI EPSRC Materials for Quantum Network (M4QN) Spin & Topology group. 25 pages, 5 figures, includes supplement. Comments welcome!

Oblique spin injection to graphene via geometry controlled magnetic nanowires

Authors: Jesus C. Toscano-Figueroa, Daniel Burrow, Victor H. Guarochico-Moreira, Chengkun Xie, Thomas Thomson, Irina V. Grigorieva, Ivan J. Vera-Marun

Abstract: We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled sides of the 2D material heterostructure. Consequently, the easy axis of the nanowires is inclined, and so the local magnetisation is oblique at the injection p… ▽ More We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled sides of the 2D material heterostructure. Consequently, the easy axis of the nanowires is inclined, and so the local magnetisation is oblique at the injection point. As a result, when performing non-local spin valve measurements we simultaneously observe both switching and spin precession phenomena, implying the spin population possesses both in-plane and out-of-plane polarisation components. By comparing the relative magnitudes of these components, we quantify the angle of the total spin polarisation vector. The extracted angle is consistent with the angle of the nanowire at the graphene interface, evidencing that the effect is a consequence of the device geometry. This simple method of spin-based vector magnetometry provides an alternative technique to define the spin polarisation in 2D spintronic devices. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Thermopower in hBN/graphene/hBN superlattices

Authors: Victor H. Guarochico-Moreira, Christopher R. Anderson, Vladimir Fal'ko, Irina V. Grigorieva, Endre Tóvári, Matthew Hamer, Roman Gorbachev, Song Liu, James H. Edgar, Alessandro Principi, Andrey V. Kretinin, Ivan J. Vera-Marun

Abstract: Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is align… ▽ More Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moiré superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moiré lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures. △ Less

Submitted 14 June, 2023; originally announced June 2023.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 108, 115418 (2023)

Exploring room temperature spin transport under band gap opening in bilayer graphene

Authors: Christopher R. Anderson, Noel Natera-Cordero, Victor H. Guarochico-Moreira, Irina V. Grigorieva, Ivan J. Vera-Marun

Abstract: We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of… ▽ More We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor. △ Less

Submitted 17 May, 2023; originally announced May 2023.

Journal ref: Sci Rep 13, 10343 (2023)

Electronic materials with nanoscale curved geometries

Authors: Paola Gentile, Mario Cuoco, Oleksii M. Volkov, Zu-Jian Ying, Ivan J. Vera-Marun, Denys Makarov, Carmine Ortix

Abstract: Research into electronic nanomaterials has recently seen a growing focus into the synthesis of structures with unconventional curved geometries including bent wires in planar systems and three-dimensional architectures obtained by rolling up nanomembranes. The inclusion of these geometries has led to the prediction and observation of a series of novel effects that either result from shape-driven m… ▽ More Research into electronic nanomaterials has recently seen a growing focus into the synthesis of structures with unconventional curved geometries including bent wires in planar systems and three-dimensional architectures obtained by rolling up nanomembranes. The inclusion of these geometries has led to the prediction and observation of a series of novel effects that either result from shape-driven modifications of the electronic motion or from an intrinsic change of electronic and magnetic properties due to peculiar confinement effects. Moreover, local strains often generated by curvature also trigger the appearance of new phenomena due to the essential role played by electromechanical coupling in solids. Here we review the recent developments in the discovery of these shape-, confinement- and strain-induced curvature effects at the nanoscale, and discuss their potential use in electronic and spintronic devices. △ Less

Submitted 14 September, 2022; v1 submitted 19 July, 2022; originally announced July 2022.

Comments: 17 pages, 4 figures. Review article

Journal ref: Nature Electronics (2022)

Tuneable spin injection in high-quality graphene with one-dimensional contacts

Authors: Victor H. Guarochico-Moreira, Jose L. Sambricio, Khalid Omari, Christopher R. Anderson, Denis A. Bandurin, Jesus C. Toscano-Figueroa, Noel Natera-Cordero, Kenji Watanabe, Takashi Taniguchi, Irina V. Grigorieva, Ivan J. Vera-Marun

Abstract: Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and do** of the graphene channel, remains difficult to eli… ▽ More Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and do** of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tuneable spin signal in fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant do** from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130,000 cm$^2$V$^{-1}$s$^{-1}$ and spin diffusion lengths approaching 20 $μ$m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality. △ Less

Submitted 21 January, 2022; v1 submitted 18 September, 2021; originally announced September 2021.

Comments: Manuscript and Supporting Information

Journal ref: Nano Lett. 2022, 22, 3, 935-941

Enhanced spin injection in molecularly functionalized graphene via ultra-thin oxide barriers

Authors: J. C. Toscano-Figueroa, N. Natera-Cordero, D. A. Bandurin, C. R. Anderson, V. H. Guarochico-Moreira, I. V. Grigorieva, I. J. Vera-Marun

Abstract: Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a tunnel barrier, with Al2O3 and MgO used most widely as barrier materials. However, the requirement to make these barriers sufficiently thin often leads to pinholes… ▽ More Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a tunnel barrier, with Al2O3 and MgO used most widely as barrier materials. However, the requirement to make these barriers sufficiently thin often leads to pinholes and low contact resistances which in turn results in low spin injection efficiencies, typically 5% at room temperature, due to the so-called resistance mismatch problem. Here we demonstrate an alternative approach to fabricate ultra-thin tunnel barrier contacts to graphene. We show that laser-assisted chemical functionalization of graphene with sp3-bonded phenyl groups effectively provides a seed layer for growth of ultrathin Al2O3 films, ensuring smooth, high quality tunnel barriers and an enhanced spin injection efficiency. Importantly, the effect of functionalization on spin transport in the graphene channel itself is relatively weak, so that the enhanced spin injection dominates and leads to an order of magnitude increase in spin signals. Furthermore, spatial control of functionalization using a focused laser beam and lithographic techniques can in principle be used to limit functionalization to contact areas only, further reducing the effect on the graphene channel. Our results open a new route towards circumventing the resistance mismatch problem in graphene-based spintronic devices based on the easily available and highly stable Al2O3, and facilitate a step forward in the development of their practical applications. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Comments: Manuscript: 11 pages, 3 figures. Supplemental material: 5 pages, 4 figures

Journal ref: Phys. Rev. Applied 15, 054018 (2021)

Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets

Authors: Dina Abdul-Wahab, Mathias Augustin, Samuel Manas Valero, Wenjun Kuang, Sarah Jenkins, Eugenio Coronado, Irina V. Grigorieva, Ivan J. Vera-Marun, Efren Navarro-Moratalla, Richard F. L. Evans, Kostya S. Novoselov, Elton J. G. Santos

Abstract: Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interaction… ▽ More Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interactions are essential to quantitatively describe the magnetism of CrI3 but requiring quantum rescaling corrections to reproduce its thermal properties. The quantum nature of the heat bath represented by discrete electron-spin and phonon-spin scattering processes induced the formation of spin fluctuations in the low temperature regime. These fluctuations induce the formation of metastable magnetic domains evolving into a single macroscopic magnetization or even a monodomain over surface areas of a few micrometers. Such domains display hybrid characteristics of Neel and Bloch types with a narrow domain wall width in the range of 3-5 nm. Similar behaviour is expected for the majority of 2D vdW magnets where higher-order exchange interactions are appreciable. △ Less

Submitted 5 November, 2020; originally announced November 2020.

Journal ref: Adv. Mater. 2020, 2004138

Tunneling spectroscopy as a probe of fractionalization in 2D magnetic heterostructures

Authors: Matteo Carrega, Ivan J. Vera-Marun, Alessandro Principi

Abstract: In this paper we develop the theory for 2D-to-2D tunneling spectroscopy aided by magnetic or quantum-order excitations, and apply it to the description of van-der-Waals heterostructures of graphene/ultrathin $α-{\rm RuCl}_3$. We study the behavior of both the differential conductance and the inelastic electron tunneling spectrum (IETS) of these heterostructures. The IETS in particular exhibits fea… ▽ More In this paper we develop the theory for 2D-to-2D tunneling spectroscopy aided by magnetic or quantum-order excitations, and apply it to the description of van-der-Waals heterostructures of graphene/ultrathin $α-{\rm RuCl}_3$. We study the behavior of both the differential conductance and the inelastic electron tunneling spectrum (IETS) of these heterostructures. The IETS in particular exhibits features, such as the gap of continuum spinon excitations and Majorana bound states, whose energies scale {\it cubicly} with the applied magnetic field. Such scaling, which exists for a relatively wide range of fields, is at odds with the linear one exhibited by conventional magnons and can be used to prove the existence of Kitaev quantum spin liquids. △ Less

Submitted 27 April, 2020; originally announced April 2020.

Comments: 13 pages main, 13 pages appendices, 9 figures

Journal ref: Phys. Rev. B 102, 085412 (2020)

Colloquium: Spintronics in graphene and other two-dimensional materials

Authors: A. Avsar, H. Ochoa, F. Guinea, B. Ozyilmaz, B. J. van Wees, I. J. Vera-Marun

Abstract: After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new tw… ▽ More After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism. △ Less

Submitted 16 January, 2020; v1 submitted 19 September, 2019; originally announced September 2019.

Comments: 30 pages, 12 figures

Journal ref: Rev. Mod. Phys. 92, 21003 (2020)

Modulation of magnon spin transport in a magnetic gate transistor

Authors: K. S. Das, F. Feringa, M. Middelkamp, B. J. van Wees, I. J. Vera-Marun

Abstract: We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with… ▽ More We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py|YIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications. △ Less

Submitted 9 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 054436 (2020)

Temperature dependence of the effective spin-mixing conductance probed with lateral non-local spin valves

Authors: K. S. Das, F. K. Dejene, B. J. van Wees, I. J. Vera-Marun

Abstract: We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin transport channel, were fabricated on top of YIG and SiO$_2$ substrates. By comparing the spin relaxation lengths in the Al channel on the two different substrate… ▽ More We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin transport channel, were fabricated on top of YIG and SiO$_2$ substrates. By comparing the spin relaxation lengths in the Al channel on the two different substrates, we calculate the effective spin-mixing conductance ($G_\text{s}$) to be $3.3\times10^{12}$~$Ω^{-1}\text{m}^{-2}$ at 293~K for the Al/YIG interface. A decrease of up to 84\% in $G_\text{s}$ is observed when the temperature ($T$) is decreased from 293~K to 4.2~K, with $G_\text{s}$ scaling with $(T/T_\text{c})^{3/2}$. The real part of the spin-mixing conductance ($G_\text{r}\approx 5.7\times10^{13}~ Ω^{-1}\text{m}^{-2}$), calculated from the experimentally obtained $G_\text{s}$, is found to be approximately independent of the temperature. We evidence a hitherto unrecognized underestimation of $G_\text{r}$ extracted from the modulation of the spin signal by rotating the magnetization direction of YIG with respect to the spin accumulation direction in the Al channel, which is found to be 50 times smaller than the calculated value. △ Less

Submitted 23 December, 2018; originally announced December 2018.

Journal ref: Appl. Phys. Lett. 114, 072405 (2019)

Independent geometrical control of spin and charge resistances in curved spintronics

Authors: Kumar Sourav Das, Denys Makarov, Paola Gentile, Mario Cuoco, Bart J. van Wees, Carmine Ortix, Ivan J. Vera-Marun

Abstract: Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should b… ▽ More Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results put the foundation for the design of efficient pure spin current based electronics, which can be integrated in complex three-dimensional architectures. △ Less

Submitted 5 October, 2019; v1 submitted 5 November, 2018; originally announced November 2018.

Comments: 3 figures, plus Supporting Information

Journal ref: Nano Letters 2019

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Authors: Pablo U. Asshoff, Jose L. Sambricio, Sergey Slizovskiy, Aidan P. Rooney, Takashi Taniguchi, Kenji Watanabe, Sarah J. Haigh, Vladimir Fal'ko, Irina V. Grigorieva, Ivan J. Vera-Marun

Abstract: Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effec… ▽ More Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Journal ref: Nano Lett., 2018

Efficient injection and detection of out-of-plane spins via the anomalous spin Hall effect in permalloy nanowires

Authors: K. S. Das, J. Liu, B. J. van Wees, I. J. Vera-Marun

Abstract: We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the magnetization of the ferromagnet. This mechanism is distinct from the spin Hall effect (SHE), where the spin accumulation is created along a fixed direction parallel to… ▽ More We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the magnetization of the ferromagnet. This mechanism is distinct from the spin Hall effect (SHE), where the spin accumulation is created along a fixed direction parallel to an interface. We demonstrate this unique property of the ASHE in nanowires made of permalloy (Py), to inject and detect out-of-plane spin accumulation in a magnetic insulator, yttrium iron garnet (YIG). We show that the efficiency for the injection/detection of out-of-plane spins can be up to 50% of that of in-plane spins. We further report the possibility to detect spin currents parallel to the Py/YIG interface for spins fully oriented in the out-of-plane direction, resulting in a sign reversal of the non-local magnon spin signal. The new mechanisms that we have demonstrated are highly relevant for spin torque devices and applications. △ Less

Submitted 29 May, 2018; originally announced May 2018.

Journal ref: Nano Lett., 2018, 18 (9), pp 5633-5639

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Authors: Davit Ghazaryan, Mark T. Greenaway, Zihao Wang, Victor H. Guarochico-Moreira, Ivan J. Vera-Marun, Jun Yin, Yuanxun Liao, Serge V. Morozov, Oleg Kristanovski, Alexander I. Lichtenstein, Mikhail I. Katsnelson, Fred Withers, Artem Mishchenko, Laurence Eaves, Andre K. Geim, Kostya S. Novoselov, Abhishek Misra

Abstract: The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretica… ▽ More The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode. △ Less

Submitted 12 May, 2018; v1 submitted 6 March, 2018; originally announced March 2018.

Journal ref: Nature Electronics volume 1, pages 344-349 (2018)

A two-channel model for Spin-relaxation noise

Authors: Siddhartha Omar, Bart J. van Wees, Ivan J. Vera-Marun

Abstract: We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise… ▽ More We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise. △ Less

Submitted 4 December, 2017; originally announced December 2017.

Comments: 6 figures, 7 pages

Journal ref: Phys. Rev. B 96, 235439 (2017)

Spin Injection and Detection via the Anomalous Spin Hall Effect in a Ferromagnetic Metal

Authors: K. S. Das, W. Y. Schoemaker, B. J. van Wees, I. J. Vera-Marun

Abstract: We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator in a non-local geometry. Our experiments reveal that permalloy ca… ▽ More We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator in a non-local geometry. Our experiments reveal that permalloy can have a higher spin injection and detection efficiency to that of platinum, owing to the ASHE. We also demonstrate the tunability of the ASHE via the orientation of the permalloy magnetization, thus creating new possibilities for spintronic applications. △ Less

Submitted 5 August, 2017; originally announced August 2017.

Report number: Phys. Rev. B 96, 220408(R) (2017)

Journal ref: Phys. Rev. B 96, 220408 (2017)

Spin relaxation 1/f noise in graphene

Authors: S. Omar, M. H. D. Guimarães, A. Kaverzin, B. J. van Wees, I. J. Vera-Marun

Abstract: We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, an… ▽ More We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, and the noise originated from the spin relaxation processes. The noise magnitude for spin and charge transport differs by three orders of magnitude, implying different scattering mechanisms for the 1/f fluctuations in the charge and spin transport processes. A modulation of the spin-dependent noise magnitude by changing the spin relaxation length and time indicates that the spin-flip processes dominate the spin-dependent noise. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 95, 081403(R) (2017)

Edge currents shunt the insulating bulk in gapped graphene

Authors: M. J. Zhu, A. V. Kretinin, M. D. Thompson, D. A. Bandurin, S. Hu, G. L. Yu, J. Birkbeck, A. Mishchenko, I. J. Vera-Marun, K. Watanabe, T. Taniguchi, M. Polini, J. R. Prance, K. S. Novoselov, A. K. Geim, M. Ben Shalom

Abstract: An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of prox… ▽ More An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of proximity-induced superconducting currents in gapped graphene and, also, compare measurements in the Hall bar and Corbino geometries in the normal state. By gradually opening the gap in bilayer graphene, we find that the supercurrent at the charge neutrality point changes from uniform to such that it propagates along narrow stripes near graphene edges. Similar stripes are found in gapped monolayers. These observations are corroborated by using the "edgeless" Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. This is in contrast to the Hall bar geometry where resistivity measured under similar conditions saturates to values of only about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Journal ref: Nature Communications 8, 14552 (2017)

Probing current-induced magnetic fields in Au|YIG heterostructure with low-energy muon spectroscopy

Authors: A. Aqeel, I. J. Vera-Marun, Z. Salman, T. Prokscha, A. Suter, B. J. van Wees, T. T. M. Palstra

Abstract: We investigated the depth dependence of current-induced magnetic fields in a bilayer of a normal metal (Au) and a ferrimagnetic insulator (Yttrium Iron Garnet - YIG) by using low energy muon spectroscopy (LE-muSR). This allows us to explore how these fields vary from the Au surface down to the buried Au|YIG interface, which is relevant to study physics like the spin-Hall effect. We observed a maxi… ▽ More We investigated the depth dependence of current-induced magnetic fields in a bilayer of a normal metal (Au) and a ferrimagnetic insulator (Yttrium Iron Garnet - YIG) by using low energy muon spectroscopy (LE-muSR). This allows us to explore how these fields vary from the Au surface down to the buried Au|YIG interface, which is relevant to study physics like the spin-Hall effect. We observed a maximum shift of 0.4 G in the internal field of muons at the surface of Au film which is in close agreement to the value expected for Oersted fields. As muons are implanted closer to the Au|YIG interface the shift is strongly suppressed, which we attribute to the dipolar fields present at the Au|YIG interface. Combining our measurements with modelling, we show that dipolar fields caused by the finite roughness of the Au|YIG interface consistently explains our observations. Our results, therefore, gauge the limits on the spatial resolution and the sensitivity of LE-muSR to the roughness of the buried magnetic interfaces, a prerequisite for future studies addressing current induced fields caused by the spin-Hall effect. △ Less

Submitted 16 August, 2016; originally announced August 2016.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 062409 (2017)

Anisotropic Hanle lineshape via anisotropic magnetothermoelectric phenomena

Authors: K. S. Das, F. K. Dejene, B. J. van Wees, I. J. Vera-Marun

Abstract: We observe anisotropic Hanle lineshape with unequal in-plane and out-of-plane non-local signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for this anisotropy corresponds to unequal spin relaxation times for in-plane and out-of-plane spin orientations as for the case of 2D materials like graphene, but it… ▽ More We observe anisotropic Hanle lineshape with unequal in-plane and out-of-plane non-local signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for this anisotropy corresponds to unequal spin relaxation times for in-plane and out-of-plane spin orientations as for the case of 2D materials like graphene, but it is unexpected in a polycrystalline metallic channel. Systematic measurements as a function of temperature and channel length, combined with both analytical and numerical thermoelectric transport models, demonstrate that the anisotropy in the Hanle lineshape is magneto-thermal in origin, caused by the anisotropic modulation of the Peltier and Seebeck coefficients of the ferromagnetic electrodes. Our results call for the consideration of such magnetothermoelectric effects in the study of anisotropic spin relaxation. △ Less

Submitted 17 August, 2016; v1 submitted 15 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 180403(R) (2016)

Direct electronic measurement of Peltier cooling and heating in graphene

Authors: I. J. Vera-Marun, J. J. van den Berg, F. K. Dejene, B. J. van Wees

Abstract: Thermoelectric effects allow the generation of electrical power from waste heat and the electrical control of cooling and heating. Remarkably, these effects are also highly sensitive to the asymmetry in the density of states around the Fermi energy and can therefore be exploited as probes of distortions in the electronic structure at the nanoscale. Here we consider two-dimensional graphene as an e… ▽ More Thermoelectric effects allow the generation of electrical power from waste heat and the electrical control of cooling and heating. Remarkably, these effects are also highly sensitive to the asymmetry in the density of states around the Fermi energy and can therefore be exploited as probes of distortions in the electronic structure at the nanoscale. Here we consider two-dimensional graphene as an excellent nanoscale carbon material for exploring the interaction between electronic and thermal transport phenomena, by presenting a direct and quantitative measurement of the Peltier component to electronic cooling and heating in graphene. Thanks to an architecture including nanoscale thermometers, we detected Peltier component modulation of up to 15 mK for currents of 20 $μ$A at room temperature and observed a full reversal between Peltier cooling and heating for electron and hole regimes. This fundamental thermodynamic property is a complementary tool for the study of nanoscale thermoelectric transport in two-dimensional materials. △ Less

Submitted 12 July, 2016; originally announced July 2016.

Comments: Final version published in Nature Communications under a Creative Commons Attribution 4.0 International License

Journal ref: Nat. Commun. 7,11525 (2016)

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

Authors: P. U. Asshoff, J. L. Sambricio, A. P. Rooney, S. Slizovskiy, A. Mishchenko, A. M. Rakowski, E. W. Hill, A. K. Geim, S. J. Haigh, V. I. Fal'ko, I. J. Vera-Marun, I. V. Grigorieva

Abstract: Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the m… ▽ More Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR. △ Less

Submitted 16 June, 2017; v1 submitted 4 July, 2016; originally announced July 2016.

Comments: 12 pages, 6 figures, Supplementary Information (6 Supplementary Notes, 11 supplementary figures)

Journal ref: 2D Mater. 4, 031004 (2017)

Electronic Spin Transport in Dual-Gated Bilayer Graphene

Authors: Ahmet Avsar, Ivan Jesus Vera-Marun, Jun You Tan, Gavin Kok Wai Koon, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam, Barbaros Ozyilmaz

Abstract: The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin… ▽ More The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel. △ Less

Submitted 21 July, 2016; v1 submitted 25 February, 2016; originally announced February 2016.

Journal ref: NPG Asia Materials 8, e274 (Mar 2016)

Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules

Authors: S. Omar, M. Gurram, I. J. Vera-Marun, X. Zhang, E. H. Huisman, A. Kaverzin, B. L. Feringa, B. J. van Wees

Abstract: In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of grap… ▽ More In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of graphene spin-valve devices functionalized with such CoPP molecules as a function of temperature via non-local spin-valve and Hanle spin precession measurements is reported. For the functionalized (molecular) devices, we observe a slight decrease in the spin relaxation time (τs), which could be an indication of enhanced spin-flip scattering of the electron spins in graphene in the presence of the molecular magnetic moments. The effect of the molecular layer is masked for low quality samples (low mobility), possibly due to dominance of Elliot-Yafet (EY) type spin relaxation mechanisms. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Surface sensitivity of the spin Seebeck effect

Authors: Aisha Aqeel, Ivan J. Vera-Marun, Bart J. van Wees, Thomas T. M. Palstra

Abstract: We have investigated the influence of the interface quality on the spin Seebeck effect (SSE) of the bilayer system yttrium iron garnet (YIG) - platinum (Pt). The magnitude and shape of the SSE is strongly influenced by mechanical treatment of the YIG single crystal surface. We observe that the saturation magnetic field H_{sat} for the SSE signal increases from 55.3 mT to 72.8 mT with mechanical tr… ▽ More We have investigated the influence of the interface quality on the spin Seebeck effect (SSE) of the bilayer system yttrium iron garnet (YIG) - platinum (Pt). The magnitude and shape of the SSE is strongly influenced by mechanical treatment of the YIG single crystal surface. We observe that the saturation magnetic field H_{sat} for the SSE signal increases from 55.3 mT to 72.8 mT with mechanical treatment. The change in the magnitude of H_{sat} can be attributed to the presence of a perpendicular magnetic anisotropy due to the treatment induced surface strain or shape anisotropy in the Pt/YIG system. Our results show that the SSE is a powerful tool to investigate magnetic anisotropy at the interface. △ Less

Submitted 22 December, 2014; originally announced December 2014.

Comments: 5 pages, 4 figures

Journal ref: J. Appl. Phys. 116, 153705 (2014)

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Authors: Ahmet Avsar, Ivan J. Vera-Marun, Tan Jun You, Kenji Watanabe, Takashi Taniguchi, Antonio Helio Castro Neto, Barbaros Ozyilmaz

Abstract: The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation p… ▽ More The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications. Introducing monolayer graphene in our device architecture for one-atom-thick conformal source-drain electrodes enables a chemically inert boron nitride dielectric to tightly seal the black phosphorus surface. This architecture, generally applicable for other sensitive two-dimensional crystals, results in stable transport characteristics which are hysteresis free and identical both under high vacuum and ambient conditions. Remarkably, our graphene electrodes lead to contacts not dominated by thermionic emission, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field effect transistor geometry. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Spin transport in graphene nanostructures

Authors: M. H. D. Guimaraes, J. J. van den Berg, I. J. Vera-Marun, P. J. Zomer, B. J. van Wees

Abstract: Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures i… ▽ More Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Spin dependent quantum interference in non-local graphene spin valves

Authors: M. H. D. Guimaraes, P. J. Zomer, I. J. Vera-Marun, B. J. van Wees

Abstract: Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum transport properties such as phase coherence and interference. Here we show that in a quantum coherent graphene nanostructure the non-local voltage is strongly… ▽ More Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum transport properties such as phase coherence and interference. Here we show that in a quantum coherent graphene nanostructure the non-local voltage is strongly modulated. Using non-local measurements, we separate the signal in spin dependent and spin independent contributions. We show that the spin dependent contribution is about two orders of magnitude larger than the spin independent one, when corrected for the finite polarization of the electrodes. The non-local spin signal is not only strongly modulated but also changes polarity as a function of the applied gate voltage. By locally tuning the carrier density in the constriction we show that the constriction plays a major role in this effect and indicates that it can act as a spin filter device. Our results show the potential of quantum coherent graphene nanostructures for the use in future spintronic devices. △ Less

Submitted 30 April, 2014; originally announced April 2014.

Journal ref: Nano Letters, Article ASAP (2014)

Absence of hyperfine effects in $^{13}$C-graphene spin valve devices

Authors: M. Wojtaszek, I. J. Vera-Marun, E. Whiteway, M. Hilke, B. J. van Wees

Abstract: The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($\sim$1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a $^{13}$C precursor, potentially amplifying the influence… ▽ More The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($\sim$1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a $^{13}$C precursor, potentially amplifying the influence of the nuclear magnetic moments. In this work we study the effect of hyperfine interactions in pure $^{13}$C-graphene on its spin transport properties. Using Hanle precession measurements we determine the spin relaxation time and observe a weak increase of $τ_{s}$ with do** and a weak change of $τ_{s}$ with temperature, as in natural graphene. For comparison we study spin transport in pure $^{12}$C-graphene, also synthesized by CVD, and observe similar spin relaxation properties. As the signatures of hyperfine effects can be better resolved in oblique spin-valve and Hanle configurations, we use finite-element modeling to emulate oblique signals in the presence of a hyperfine magnetic field for typical graphene properties. Unlike in the case of GaAs, hyperfine interactions with $^{13}$C nuclei influence electron spin transport only very weakly, even for a fully polarized nuclear system. Also, in the measurements of the oblique spin-valve and Hanle effects no hyperfine features could be resolved. This work experimentally confirms the weak character of hyperfine interactions and the negligible role of $^{13}$C atoms in the spin dephasing processes in graphene. △ Less

Submitted 25 April, 2014; originally announced April 2014.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 89, 035417 (2014)

Transition between 1D and 0D spin transport studied by Hanle precession

Authors: M. Wojtaszek, I. J. Vera-Marun, B. J. van Wees

Abstract: The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of the spin Bloch equation, which accounts for diffusion, relaxation and precession effects on spin. The analytic formula, however, is derived for an infinite lengt… ▽ More The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of the spin Bloch equation, which accounts for diffusion, relaxation and precession effects on spin. The analytic formula, however, is derived for an infinite length of the 1D spin channel. This is usually not satisfied in the real devices. The finite size of the channel length $l_{\text{dev}}$ leads to confinement of spins and increase of spin accumulation. Moreover, reflection of spins from the channel ends leads to spin interference, altering the characteristic precession lineshape. In this work we study the influence of finite $l_{\text{dev}}$ on the Hanle lineshape and show when it can lead to a two-fold discrepancy in the extracted spin coefficients. We propose the extension of the Hanle analytic formula to include the geometrical aspects of the real device and get an excellent agreement with a finite-element model of spin precession, where this geometry is explicitly set. We also demonstrate that in the limit of a channel length shorter than the spin relaxation length $λ_{s}$, the spin diffusion is negligible and a 0D spin transport description, with Lorentzian precession dependence applies. We provide a universal criterion for which transport description, 0D or 1D, to apply depending on the ratio $l_{\text{dev}}/λ_{s}$ and the corresponding accuracy of such a choice. △ Less

Submitted 24 April, 2014; originally announced April 2014.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 89, 245427 (2014)

Spin heat accumulation induced by tunneling from a ferromagnet

Authors: I. J. Vera-Marun, B. J. van Wees, R. Jansen

Abstract: An electric current from a ferromagnet into a non-magnetic material can induce a spin-dependent electron temperature. Here it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effe… ▽ More An electric current from a ferromagnet into a non-magnetic material can induce a spin-dependent electron temperature. Here it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the non-magnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance. △ Less

Submitted 19 February, 2014; v1 submitted 15 August, 2013; originally announced August 2013.

Comments: 5 pages, 2 figures, plus 5 pages of supplemental material

Journal ref: Phys. Rev. Lett. 112, 056602 (2014)

Contact induced spin relaxation in Hanle spin precession measurements

Authors: T. Maassen, I. J. Vera-Marun, M. H. D. Guimarães, B. J. van Wees

Abstract: In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular o… ▽ More In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements. △ Less

Submitted 29 September, 2012; originally announced October 2012.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 86, 235408 (2012)

Enhancement of spin relaxation time in hydrogenated graphene spin valve devices

Authors: M. Wojtaszek, I. J. Vera-Marun, T. Maassen, B. J. van Wees

Abstract: Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We obs… ▽ More Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature. △ Less

Submitted 11 September, 2012; originally announced September 2012.

Journal ref: Phys. Rev. B 87, 081402(R) (2013)

Spin transport in high quality suspended graphene devices

Authors: M. H. D. Guimarães, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, B. J. van Wees

Abstract: We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data. We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data. △ Less

Submitted 6 July, 2012; originally announced July 2012.

Comments: 22 pages, 6 figures; Nano Letters, Article ASAP (2012) (http://pubs.acs.org/doi/abs/10.1021/nl301050a)

Quantum Hall transport as a probe of capacitance profile at graphene edges

Authors: I. J. Vera-Marun, P. J. Zomer, A. Veligura, M. H. D. Guimarães, L. Visser, N. Tombros, H. J. van Elferen, U. Zeitler, B. J. van Wees

Abstract: The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample… ▽ More The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas. △ Less

Submitted 5 November, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 013106 (2013)

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

Authors: H. J. van Elferen, A. Veligura, E. V. Kurganova, U. Zeitler, J. C. Maan, N. Tombros, I. J. Vera-Marun, B. J. van Wees

Abstract: We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the ga… ▽ More We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase develo** at the charge neutrality point. △ Less

Submitted 27 February, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 85, 115408 (2012)

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Authors: Alina Veligura, Paul J. Zomer, Ivan J. Vera-Marun, Csaba Józsa, Pavlo I. Gordiichuk, Bart J. van Wees

Abstract: Hysteresis and commonly observed p-do** of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemica… ▽ More Hysteresis and commonly observed p-do** of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trap** mechanism associated with sensitivity of graphene to the local pH. △ Less

Submitted 7 October, 2011; originally announced October 2011.

Comments: 5 pages, 3 figures

Journal ref: J. Appl. Phys. 110, 113708 (2011)

Non-linear spin Seebeck effect due to spin-charge interaction in graphene

Authors: I. J. Vera-Marun, V. Ranjan, B. J. van Wees

Abstract: The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other… ▽ More The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other degrees of freedom, going beyond the prototypical electrical spin injection and detection using magnetic contacts. Such interactions have been explored recently, for example, by using spin Hall or spin thermoelectric effects. Here we present the detection of non-local spin signals using non-magnetic detectors, via an as yet unexplored non-linear interaction between spin and charge. In analogy to the Seebeck effect, where a heat current generates a charge potential, we demonstrate that a spin current in a paramagnet leads to a charge potential, if the conductivity is energy dependent. We use graphene as a model system to study this effect, as recently proposed. The physical concept demonstrated here is generally valid, opening new possibilities for spintronics. △ Less

Submitted 27 September, 2011; originally announced September 2011.

Journal ref: Nature Physics 8, 313-316 (2012)

Nonlinear interaction of spin and charge currents in graphene

Authors: I. J. Vera-Marun, V. Ranjan, B. J. van Wees

Abstract: We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose graphene as a model system to study these effects and predict its magnitudes in nonlocal spin valve devices. The ambipolar behavior of graphene is used to demonstr… ▽ More We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose graphene as a model system to study these effects and predict its magnitudes in nonlocal spin valve devices. The ambipolar behavior of graphene is used to demonstrate amplification of spin accumulation in p-n junctions by applying a charge current through nonmagnetic contacts. △ Less

Submitted 29 December, 2011; v1 submitted 25 April, 2011; originally announced April 2011.

Comments: minor changes, 4 pages, 3 figures

Journal ref: Phys. Rev. B 84, 241408(R) (2011)

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

Authors: N. Tombros, A. Veligura, J. Junesch, J. J. van den Berg, P. J. Zomer, M. Wojtaszek, I. J. Vera-Marun, H. T. Jonkman, B. J. van Wees

Abstract: The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are l… ▽ More The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices. △ Less

Submitted 27 September, 2010; v1 submitted 21 September, 2010; originally announced September 2010.

Comments: 14 pages, 4 figures

Journal ref: J. Appl. Phys. 109, 093702 (2011)