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Distinguishing spin pum** from spin rectification in organic semiconductor-based lateral spin pum** device architectures
Authors:
Piotr Skalski,
Olga Zadvorna,
Deepak Venkateshvaran,
Henning Sirringhaus
Abstract:
Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, howev…
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Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, however, there is still uncertainty over the origin of the signals. Recently, we explored spin transport through an organic semiconductor with lateral spin injection and detection architectures, where the injected spin current is detected non-locally via spin-to-charge conversion in an inorganic detector. In this work we show that the widely-used control experiments like linear power dependence and inversion of the signal with the magnetic field are not sufficient evidence of spin transport and can lead to an incorrect interpretation of the signal. Here, we use in-plane angular dependent measurements to separate pure spin signal from parasitic effects arising from spin rectification (SREs). Apart from well established anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a novel effect which we call spurious inverse spin Hall effect (ISHE). It strongly resembles ISHE behaviour, but arises in the ferromagnet rather than the detector meaning this additional effect has to be considered in future work.
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Submitted 27 August, 2021;
originally announced August 2021.
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The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors
Authors:
D. Simatos,
L. J. Spalek,
U. Kraft,
M. Nikolka,
X. Jiao,
C. R. McNeill,
D. Venkateshvaran,
H. Sirringhaus
Abstract:
Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has no…
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Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has not been studied so far in high-performing n-type materials, such as N2200.6,7 In this work, the performance metrics of N2200 transistors are examined with respect to dielectrics with different end groups (Cytop-M and Cytop-S8). We hypothesize that the polar end groups would lead to increased dipole-induced disorder, and worse performance.1,9,10 The long-time annealing scheme at lower temperatures used in the paper is assumed to lead to better crystallization by allowing the crystalline domains to reorganize in the presence of the solvent.11 It is hypothesized that the higher crystallinity could narrow down the range at which energy carriers are induced and thus decrease the gate dependence of the mobility. The results show that the dielectric end groups do not influence the bias stress stability of N2200 transistors. However, long annealing times result in a dramatic improvement in bias stress stability, with the most stable devices having a mobility that is only weakly dependent on or independent of gate voltage.
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Submitted 14 April, 2021;
originally announced April 2021.
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Tuning Spin Current Injection at Ferromagnet/Non-Magnet Interfaces by Molecular Design
Authors:
Angela Wittmann,
Guillaume Schweicher,
Katharina Broch,
Jiri Novak,
Vincent Lami,
David Cornil,
Erik R. McNellis,
Olia Zadvorna,
Deepak Venkateshvaran,
Kazuo Takimiya,
Yves H. Geerts,
Jerome Cornil,
Yana Vaynzof,
Jairo Sinova,
Shun Watanabe,
Henning Sirringhaus
Abstract:
There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the i…
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There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.
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Submitted 29 July, 2020;
originally announced July 2020.
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Chasing the killer phonon mode for the rational design of low disorder, high mobility molecular semiconductors
Authors:
Guillaume Schweicher,
Gabriele D'Avino,
Michael T. Ruggiero,
David J. Harkin,
Katharina Broch,
Deepak Venkateshvaran,
Guoming Liu,
Audrey Richard,
Christian Ruzie,
Jeff Armstrong,
Alan R. Kennedy,
Kenneth Shankland,
Kazuo Takimiya,
Yves H. Geerts,
J. Axel Zeitler,
Simone Fratini,
Henning Sirringhaus
Abstract:
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the…
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Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors is suggested.
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Submitted 12 September, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures
Authors:
E. Pfitzner,
X. Hu,
H. W. Schumacher,
A. Hoehl,
D. Venkateshvaran,
M. Cubukcu,
J. -W. Liao,
S. Auffret,
J. Heberle,
J. Wunderlich,
B. Kaestner
Abstract:
Near-field optical microscopy by means of infrared photocurrent map** has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a c…
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Near-field optical microscopy by means of infrared photocurrent map** has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a contrast determined by the local state of magnetization. By comparing the measured electric response of a magnetic reference sample with numerical simulations we derive an estimate of the field enhancement and the corresponding temperature profile induced on the sample surface.
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Submitted 31 August, 2018;
originally announced August 2018.
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Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors
Authors:
Riccardo Di Pietro,
Deepak Venkateshvaran,
Andreas Klug,
Emil J. W. List-Kratochvil,
Antonio Facchetti,
Henning Sirringhaus,
Dieter Neher
Abstract:
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determin…
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A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials.
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Submitted 21 February, 2014;
originally announced February 2014.
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Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties
Authors:
Deepak Venkateshvaran,
Matthias Althammer,
Andrea Nielsen,
Stephan Gepraegs,
M. S. Ramachandra Rao,
Sebastian T. B. Goennenwein,
Matthias Opel,
Rudolf Gross
Abstract:
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam…
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The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on the B sublattice also removing itinerant charge carriers, and (iii) application of both Zn substitution and excess oxygen results in a compensation effect as Zn substitution partially removes the Fe vacancies. A decrease (increase) of charge carrier density results in a weakening (strengthening) of double exchange and thereby a decrease (increase) of conductivity and the saturation magnetization. This scenario is confirmed by the observation that the saturation magnetization scales with the longitudinal conductivity. The combination of tailored films with semiconductor materials such as ZnO in multi-functional heterostructures seems to be particularly appealing.
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Submitted 20 March, 2009; v1 submitted 27 August, 2008;
originally announced August 2008.
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Anomalous Hall Effect in Magnetite: Universal Scaling Relation Between Hall and Longitudinal Conductivity in Low-Conductivity Ferromagnets
Authors:
Deepak Venkateshvaran,
Wolfgang Kaiser,
Andrea Boger,
Matthias Althammer,
M. S. Ramachandra Rao,
Sebastian T. B. Goennenwein,
Matthias Opel,
Rudolf Gross
Abstract:
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strai…
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The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $σ_{xy}^{\rm AHE}$ and the longitudinal conductivity $σ_{xx}$ over several orders of magnitude, a universal scaling relation $σ_{xy}^{\rm AHE} \propto σ_{xx}^α$ with $α= 1.69 \pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hop** transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
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Submitted 8 May, 2008;
originally announced May 2008.
