Showing 1–17 of 17 results for author: Velev, J

Origin of Biomolecular Networks

Authors: Heeralal Janwa, Steven E. Massey, Julian Velev, Bud Mishra

Abstract: Biomolecular networks have already found great utility in characterizing complex biological systems arising from pair-wise interactions amongst biomolecules. Here, we review how graph theoretical approaches can be applied not only for a better understanding of various proximate (mechanistic) relations, but also, ultimate (evolutionary) structures encoded in such networks. A central question deals… ▽ More Biomolecular networks have already found great utility in characterizing complex biological systems arising from pair-wise interactions amongst biomolecules. Here, we review how graph theoretical approaches can be applied not only for a better understanding of various proximate (mechanistic) relations, but also, ultimate (evolutionary) structures encoded in such networks. A central question deals with the evolutionary dynamics by which different topologies of biomolecular networks might have evolved, as well as the biological principles that can be hypothesized from a deeper understanding of the induced network dynamics. We emphasize the role of gene duplication in terms of signaling game theory, whereby sender and receiver gene players accrue benefit from gene duplication, leading to a preferential attachment mode of network growth. Information asymmetry between sender and receiver genes is hypothesized as a key driver of the resulting network topology. The study of the resulting dynamics suggests many mathematical/computational problems, the majority of which are intractable but yield to efficient approximation algorithms, when studied through an algebraic graph theoretic lens. △ Less

Submitted 30 November, 2018; originally announced November 2018.

MSC Class: 90B10; 94C15; 92E10; 90C35; 05C82; 05C81; 5C85; 05C10; 15A18 ACM Class: G.2; G.3; G.4; C.1.3

Band structure and spin texture of Bi$_2$Se$_3$/3d ferromagnetic metal interface

Authors: Jia Zhang, Julian P. Velev, Xiaoqian Dang, Evgeny Y. Tsymbal

Abstract: The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the giant spin-orbit torques observed in ferromagnetic metal/TI structures. In this work, using first-principles and model tight-binding calculations, we investigat… ▽ More The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the giant spin-orbit torques observed in ferromagnetic metal/TI structures. In this work, using first-principles and model tight-binding calculations, we investigate the interface between the topological insulator Bi2Se3 and 3d-transition ferromagnetic metals Ni and Co. We find that the difference in the work functions of the topological insulator and the ferromagnetic metals shift the topological surface states down about 0.5 eV below the Fermi energy where the hybridization of these surface states with the metal bands destroys their helical spin structure. The band alignment of Bi2Se3 and Ni (Co) places the Fermi energy far in the conduction band of bulk Bi2Se3, where the spin of the carriers is aligned with the magnetization in the metal. Our results indicate that the topological surface states are unlikely to be responsible for the huge spin-orbit torque effect observed experimentally in these systems. △ Less

Submitted 2 June, 2016; originally announced June 2016.

Comments: 4 figures

Journal ref: Phys. Rev. B 94, 014435 (2016)

Intrinsic spin orbit torque in a single domain nanomagnet

Authors: A. Kalitsov, S. A. Nikolaev, J. Velev, M. Chshiev, O. Mryasov

Abstract: We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that, to the first order in SOC, the intrinsic SOT has only the field-like torque symmetry and can be interpreted as the longitudinal spin current induced by the cha… ▽ More We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that, to the first order in SOC, the intrinsic SOT has only the field-like torque symmetry and can be interpreted as the longitudinal spin current induced by the charge current and Rashba field. We analyze the results in terms of the material related parameters of the electronic structure, such as band filling, band width, exchange splitting, as well as the Rashba SOC strength. On the basis of these numerical and analytical results, we discuss the magnitude and sign of SOT. Our results show that the different sign of SOT in identical ferromagnetic layers with different supporting layers, e.g. Co/Pt and Co/Ta, could be attributed to electrostatic do** of the ferromagnetic layer by the support. △ Less

Submitted 1 January, 2018; v1 submitted 26 April, 2016; originally announced April 2016.

Comments: 10 pages, 2 figures

Journal ref: Phys. Rev. B 96, 214430 (2017)

What is the minimal model of magnetic interactions in Fe-based superconductors?

Authors: J. K. Glasbrenner, J. P. Velev, I. I. Mazin

Abstract: Using noncollinear first-principles calculations we perform a systematic study of the magnetic order in several families of ferropnictides. We find a fairly universal energy dependence on the magnetization order in all cases. Our results confirm that a simple Heisenberg model fails to account for the energy dependence of the magnetization in couple of ways: first a biquadratic term is present in a… ▽ More Using noncollinear first-principles calculations we perform a systematic study of the magnetic order in several families of ferropnictides. We find a fairly universal energy dependence on the magnetization order in all cases. Our results confirm that a simple Heisenberg model fails to account for the energy dependence of the magnetization in couple of ways: first a biquadratic term is present in all cases and second the magnetic moment softens depending on the orientation. We also find that hole do** substantially reduces the biquadratic contribution, although the antiferromagnetic stripe state remains stable within the whole range of do** concentrations, and thus the reported lack of the orthorhombicity in Na-doped BaFe$_2$As$_2$ is probably due to factors other than a sign reversal of the biquadratic term. Finally, we discovered that even with the biquadratic term, there is a limit to the accuracy of map** the density functional theory energetics onto Heisenberg-type models, independent of the range of the model. △ Less

Submitted 7 January, 2014; originally announced January 2014.

Comments: 8 pages, 3 figures, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 89, 064509 (2014)

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers

Authors: Alan Kalitsov, Pierre-Jean Zermatten, Frédéric Bonell, Gilles Gaudin, Stéphane Andrieu, Coriolan Tiusan, Mairbek Chshiev, Julian P. Velev

Abstract: The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O dep… ▽ More The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions. △ Less

Submitted 17 September, 2013; originally announced September 2013.

Interface states in CoFe2O4 spin-filter tunnel junctions

Authors: Pavel V. Lukashev, J. D. Burton, Alexander Smogunov, Julian P. Velev, Evgeny Y. Tsymbal

Abstract: Spin-filter tunneling is a promising way to generate highly spin-polarized current, a key component for spintronics applications. In this work we explore the tunneling conductance across the spin-filter material CoFe2O4 interfaced with Au electrodes, a geometry which provides nearly perfect lattice matching at the CoFe2O4/Au(001) interface. Using density functional theory calculations we demonstra… ▽ More Spin-filter tunneling is a promising way to generate highly spin-polarized current, a key component for spintronics applications. In this work we explore the tunneling conductance across the spin-filter material CoFe2O4 interfaced with Au electrodes, a geometry which provides nearly perfect lattice matching at the CoFe2O4/Au(001) interface. Using density functional theory calculations we demonstrate that interface states play a decisive role in controlling the transport spin polarization in this tunnel junction. For a realistic CoFe2O4 barrier thickness, we predict a tunneling spin polarization of about -60%. We show that this value is lower than what is expected based solely on considerations of the spin-polarized band structure of CoFe2O4, and therefore that these interface states can play a detrimental role. We argue this is a rather general feature of ferrimagnetic ferrites and could make an important impact on spin-filter tunneling applications. △ Less

Submitted 13 August, 2013; originally announced August 2013.

Comments: 5 pages, 4 Figures plus 1 page supplement

Electric-field-induced magnetization changes in Co/Al2O3 granular multilayers

Authors: Ajeesh M. Sahadevan, Alan Kalitsov, Gopinadhan Kalon, Charanjit S. Bhatia, Julian Velev, Hyunsoo Yang

Abstract: We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the applied electric field and (b) high-field regime when the magnetization decreases irreversibly. The former is attributed to the changes in the relative 3d-orbit… ▽ More We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the applied electric field and (b) high-field regime when the magnetization decreases irreversibly. The former is attributed to the changes in the relative 3d-orbital occupation of the minority and majority bands in the Co granules. A theoretical model has been developed to explain the electric field induced changes in the band structure of the granular system and hence the magnetic moment. The latter result may be understood assuming the electric field induces oxygen migration from Al2O3 to the Co granules, since an increase in oxidation state of the Co granules is shown, through ab-initio calculations, to give rise to a reduced magnetization of the system. △ Less

Submitted 22 January, 2013; originally announced January 2013.

Comments: Phys. Rev. B (2013)

Ferroelectric Dead Layer Driven by a Polar Interface

Authors: Y. Wang, M. K. Niranjan, K. Janicka, J. P. Velev, M. Ye. Zhuravlev, S. S. Jaswal, E. Y. Tsymbal

Abstract: Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as do** layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron cha… ▽ More Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as do** layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely Vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is non-switchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces. △ Less

Submitted 4 October, 2010; v1 submitted 14 April, 2010; originally announced April 2010.

Comments: 33 Pages, 5 figures

Journal ref: Phys. Rev. B 82, 094114 (2010)

Oxide tunnel junctions supporting a two-dimensional electron gas

Authors: J. D. Burton, J. P. Velev, E. Y. Tsymbal

Abstract: The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range of possibilities to the realm of "out-of-plane" nanoelectronics by examining such all-oxide heterostructures as barriers in tunnel junctions. As an example sy… ▽ More The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range of possibilities to the realm of "out-of-plane" nanoelectronics by examining such all-oxide heterostructures as barriers in tunnel junctions. As an example system we perform first-principles electronic structure and transport calculations of a tunnel junction with a [SrTiO3]4/[LaO]1/[SrTiO3]4 heterostructure tunneling barrier embedded between SrRuO3 electrodes. The presence of the LaO atomic layer induces the formation of a 2DEG within the tunneling barrier which acts as an extended defect perpendicular to the transport direction, providing a route for resonant tunneling. Our calculations demonstrate that the tunneling conductance in this system can be strongly enhanced compared to a pure SrTiO3 barrier due to resonant tunneling, but that lattice polarization effects play a significant role in determining this behavior. In addition we find that this resonant tunneling is highly selective of the orbital symmetry of the tunneling states due to the "orbital polarization" of the 2DEG. We also discuss how the properties of the 2DEG are affected by the presence of metal electrodes. △ Less

Submitted 18 June, 2009; originally announced June 2009.

Comments: 8 pages, 5 figures, 1 table

Journal ref: Physical Review B, 80 115408 (2009).

Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles

Authors: Julian P. Velev, Chun-Gang Duan, J. D. Burton, Alexander Smogunov, Manish K. Niranjan, Erio Tosatti, S. S. Jaswal, Evgeny Y. Tsymbal

Abstract: Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensi… ▽ More Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensitivity of conductance to the magnetization alignment of the electrodes (tunnelling magnetoresistance) and the polarization orientation in the ferroelectric barrier (tunnelling electroresistance), these multiferroic tunnel junctions (MFTJs) may serve as four-state resistance devices. Based on first-principles calculations we demonstrate four resistance states in SrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces. We find that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel. These results reveal the exciting prospects of MFTJs for application as multifunctional spintronic devices. △ Less

Submitted 12 December, 2008; originally announced December 2008.

Comments: To be published in Nano Letters

Journal ref: Nano Letters 9, 427-432 (2009)

Surface Magnetoelectric Effect in Ferromagnetic Metal Films

Authors: Chun-Gang Duan, Julian P. Velev, R. F. Sabirianov, Ziqiang Zhu, Junhao Chu, S. S. Jaswal, E. Y. Tsymbal

Abstract: A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of co… ▽ More A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of considerable interest in the area of electrically-controlled magnetism and magnetoelectric phenomena. △ Less

Submitted 6 August, 2008; originally announced August 2008.

The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions

Authors: J. D. Burton, R. F. Sabirianov, J. P. Velev, O. N. Mryasov, E. Y. Tsymbal

Abstract: First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly… ▽ More First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few mV. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a general phenomenon typical for magnetic broken contacts and other experimental geometries where a magnetic tip is used to probe electron transport. △ Less

Submitted 28 June, 2007; v1 submitted 13 March, 2007; originally announced March 2007.

Comments: 4 pages, 3 figures

Calculations of spin-disorder resistivity from first principles

Authors: A. L. Wysocki, K. D. Belashchenko, J. P. Velev, M. van Schilfgaarde

Abstract: Spin-disorder resistivity of Fe and Ni is studied using the noncollinear density functional theory. The Landauer conductance is averaged over random disorder configurations and fitted to Ohm's law. The distribution function is approximated by the mean-field theory. The dependence of spin-disorder resistivity on magnetization in Fe is found to be in excellent agreement with the results for the is… ▽ More Spin-disorder resistivity of Fe and Ni is studied using the noncollinear density functional theory. The Landauer conductance is averaged over random disorder configurations and fitted to Ohm's law. The distribution function is approximated by the mean-field theory. The dependence of spin-disorder resistivity on magnetization in Fe is found to be in excellent agreement with the results for the isotropic s-d model. In the fully disordered state, spin-disorder resistivity for Fe is close to experiment, while for fcc Ni it exceeds the experimental value by a factor of 2.3. This result indicates strong magnetic short-range order in Ni at the Curie temperature. △ Less

Submitted 20 November, 2006; v1 submitted 14 November, 2006; originally announced November 2006.

Comments: 3 pages, 3 figures

Interface effects in spin-dependent tunneling

Authors: E. Y. Tsymbal, K. D. Belashchenko, J. P. Velev, S. S. Jaswal, M. van Schilfgaarde, I. I. Oleynik, D. A. Stewart

Abstract: In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental quest… ▽ More In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the spin polarization is primarily determined by the electronic and atomic structure of the ferromagnet/insulator interfaces rather than by their bulk properties. First, we consider a simple tight-binding model which demonstrates that the existence of interface states and their contribution to the tunneling current depend on the degree of hybridization between the orbitals on metal and insulator atoms. The decisive role of the interfaces is further supported by studies of spin-dependent tunneling within realistic first-principles models of Co/vacuum/Al, Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs. We find that variations in the atomic potentials and bonding strength near the interfaces have a profound effect resulting in the formation of interface resonant states, which dramatically affect the spin polarization and TMR. The strong sensitivity of the tunneling spin polarization and TMR to the interface atomic and electronic structure dramatically expands the possibilities for engineering optimal MTJ properties for device applications. △ Less

Submitted 28 November, 2005; originally announced November 2005.

Comments: 22 pages

Journal ref: Progress in Materials Science, 52, 401 (2007)

Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions

Authors: K. D. Belashchenko, J. Velev, E. Y. Tsymbal

Abstract: The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/o… ▽ More The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decrease in tunneling magnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer of Ag epitaxially deposited at the interface between Fe and MgO suppresses tunneling through the interface band and may thus be used to enhance the TMR for thin barriers. △ Less

Submitted 13 May, 2005; originally announced May 2005.

Comments: 4 pages, 3 eps figures (2 in color), revtex4

Journal ref: Phys. Rev. B 72, 140404(R) (2005)

Ballistic anisotropic magnetoresistance

Authors: J. Velev, R. F. Sabirianov, S. S. Jaswal, E. Y. Tsymbal

Abstract: Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the mag… ▽ More Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab-initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMR when the magnetization changes direction from parallel to perpendicular to the wire axis. △ Less

Submitted 22 December, 2004; originally announced December 2004.

Journal ref: Phys. Rev. Lett. 94, 127203 (2005)

Monte Carlo simulation of equilibrium L1_0 ordering in FePt nanoparticles

Authors: R. V. Chepulskii, J. Velev, W. H. Butler

Abstract: First, second and third nearest neighbor mixing potentials for FePt alloys, were calculated from first principles using a Connolly-Williams approach. Using the mixing potentials obtained in this manner, the dependency of equilibrium L1_0 ordering on temperature was studied for bulk and for a spherical nanoparticle with 3.5nm diameter at equiatomic composition by use of Monte Carlo simulation and… ▽ More First, second and third nearest neighbor mixing potentials for FePt alloys, were calculated from first principles using a Connolly-Williams approach. Using the mixing potentials obtained in this manner, the dependency of equilibrium L1_0 ordering on temperature was studied for bulk and for a spherical nanoparticle with 3.5nm diameter at equiatomic composition by use of Monte Carlo simulation and the analytical ring approximation. The calculated order-disorder temperature for bulk (1495-1514 K) was in relatively good agreement (4% error) with the experimental value (1572K). For nanoparticles of finite size, the (long range) order parameter changed continuously from unity to zero with increasing temperature. Rather than a discontinuity indicative of a phase transition we obtained an inflection point in the order as a function of temperature. This inflection point occurred at a temperature below the bulk phase transition temperature and which decreased as the particle size decreased. Our calculations predict that 3.5nm diameter particles in configurational equilibrium at 600 C (a typical annealing temperature for promoting L1_0 ordering) have an L1_0 order parameter of 0.83 (compared to a maximum possible value equal to unity). According to our investigations, the experimental absence of (relatively) high L1_0 order in 3.5nm diameter nanoparticles annealed at 600 C or below is primarily a problem of kinetics rather than equilibrium △ Less

Submitted 22 October, 2004; originally announced October 2004.

Journal ref: J. Appl. Phys. 97, 10J311 (2005)