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Supercurrent parity-meter in a nanowire Cooper-pair transistor
Authors:
Ji-Yin Wang,
Constantin Schrade,
Vukan Levajac,
David van Driel,
Kongyi Li,
Sasa Gazibegovic,
Ghada Badawy,
Roy L. M. Op het Veld,
Joon Sue Lee,
Mihir Pendharkar,
Connor P. Dempsey,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers,
Liang Fu,
Leo P. Kouwenhoven,
Jie Shen
Abstract:
We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-…
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We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a new series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands.
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Submitted 18 July, 2021;
originally announced July 2021.
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Universal Platform for Scalable Semiconductor-Superconductor Nanowire Networks
Authors:
Jason Jung,
Roy L. M. Op het Veld,
Rik Benoist,
Orson A. H. van der Molen,
Carlo Manders,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that main…
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Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments. Instead, it takes advantage of directional growth methods and uses bottom-up grown InP structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects, and to grow a predefined height, ensures precise control of the shadowed region. We demonstrate the approach by growing InSb nanowire networks with well-defined Al and Pb islands. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of Pt and Pb can independently be shadow deposited, enabling a scalable and reproducible in-situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments.
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Submitted 12 May, 2021;
originally announced May 2021.
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In-plane selective area InSb-Al nanowire quantum networks
Authors:
Roy L. M. Op het Veld,
Di Xu,
Vanessa Schaller,
Marcel A. Verheijen,
Stan M. E. Peters,
Jason Jung,
Chuyao Tong,
Qingzhen Wang,
Michiel W. A. de Moor,
Bart Hesselmann,
Kiefer Vermeulen,
Jouri D. S. Bommer,
Joon Sue Lee,
Andrey Sarikov,
Mihir Pendharkar,
Anna Marzegalli,
Sebastian Koelling,
Leo P. Kouwenhoven,
Leo Miglio,
Chris J. Palmstrøm,
Hao Zhang,
Erik P. A. M. Bakkers
Abstract:
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum tr…
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Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $μ$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network.
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Submitted 11 March, 2021;
originally announced March 2021.
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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
Authors:
Hao Zhang,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Guanzhong Wang,
Nick van Loo,
Chun-Xiao Liu,
Sasa Gazibegovic,
John A. Logan,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order…
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.
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Submitted 27 January, 2021;
originally announced January 2021.
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Full parity phase diagram of a proximitized nanowire island
Authors:
J. Shen,
G. W. Winkler,
F. Borsoi,
S. Heedt,
V. Levajac,
J. Y. Wang,
D. van Driel,
D. Bouman,
S. Gazibegovic,
R. L. M. Op Het Veld,
D. Car,
J. A. Logan,
M. Pendharkar,
C. J. Palmstrom,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
B. van Heck
Abstract:
We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our nume…
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We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits.
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Submitted 3 August, 2021; v1 submitted 18 December, 2020;
originally announced December 2020.
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Transmission phase read-out of a large quantum dot in a nanowire interferometer
Authors:
Francesco Borsoi,
Kun Zuo,
Sasa Gazibegovic,
Roy L. M. Op het Veld,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Sebastian Heedt
Abstract:
Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the…
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Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits.
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Submitted 25 June, 2020;
originally announced June 2020.
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Crossed Andreev Reflection in InSb Flake Josephson Junctions
Authors:
Folkert K. de Vries,
Martijn L. Sol,
Sasa Gazibegovic,
Roy L. M. op het Veld,
Stijn C. Balk,
Diana Car,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Jie Shen
Abstract:
We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific…
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We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific crystal facet of the edge with enhanced conduction, and confirm this by measuring multiple devices. Furthermore, we argue the even-odd effect is due to crossed Andreev reflection, a process where a Cooper pair splits up over the two edges and recombines at the opposite contact. An entirely $h/e$ periodic SQUID pattern, as well as the observation of both even-odd and odd-even effects, corroborates this conclusion. Crossed Andreev reflection could be harnessed for creating a topological state of matter or performing experiments on the non-local spin-entanglement of spatially separated Cooper pairs.
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Submitted 14 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Electric field tunable superconductor-semiconductor coupling in Majorana nanowires
Authors:
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Georg W. Winkler,
Andrey E. Antipov,
Arno Bargerbos,
Guanzhong Wang,
Nick van Loo,
Roy L. M. Op het Veld,
Sasa Gazibegovic,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Joon Sue Lee,
Erik P. A. M. Bakkers,
Chris J. Palmstrøm,
Roman M. Lutchyn,
Leo P. Kouwenhoven,
Hao Zhang
Abstract:
We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and sp…
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We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems.
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Submitted 4 June, 2018;
originally announced June 2018.
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Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands
Authors:
Jie Shen,
Sebastian Heedt,
Francesco Borsoi,
Bernard Van Heck,
Sasa Gazibegovic,
Roy L. M. Op het Veld,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Senja J. J. Ramakers,
Guanzhong Wang,
Di Xu,
Daniel Bouman,
Attila Geresdi,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we stu…
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The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS,and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e. compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes.
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Submitted 5 November, 2018; v1 submitted 9 April, 2018;
originally announced April 2018.
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Quantized Majorana conductance
Authors:
Hao Zhang,
Chun-Xiao Liu,
Sasa Gazibegovic,
Di Xu,
John A. Logan,
Guanzhong Wang,
Nick van Loo,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua…
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Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments.
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Submitted 29 October, 2017;
originally announced October 2017.
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Epitaxy of Advanced Nanowire Quantum Devices
Authors:
Sasa Gazibegovic,
Diana Car,
Hao Zhang,
Stijn C. Balk,
John A. Logan,
Michiel W. A. de Moor,
Maja C. Cassidy,
Rudi Schmits,
Di Xu,
Guanzhong Wang,
Peter Krogstrup,
Roy L. M. Op het Veld,
Jie Shen,
Daniël Bouman,
Borzoyeh Shojaei,
Daniel Pennachio,
Joon Sue Lee,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Leo P. Kouwenhoven,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers
Abstract:
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exc…
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Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.
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Submitted 10 December, 2021; v1 submitted 3 May, 2017;
originally announced May 2017.
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Observation of Conductance Quantization in InSb Nanowire Networks
Authors:
Elham M. T. Fadaly,
Hao Zhang,
Sonia Conesa-Boj,
Diana Car,
Önder Gül,
Sébastien R. Plissard,
Roy L. M. Op het Veld,
Sebastian Kölling,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a…
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Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior.
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Submitted 12 July, 2021; v1 submitted 15 March, 2017;
originally announced March 2017.
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InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Authors:
Diana Car,
Sonia Conesa-Boj,
Hao Zhang,
Roy L. M. Op het Veld,
Michiel W. A. de Moor,
Elham M. T. Fadaly,
Önder Gül,
Sebastian Kölling,
Sebastien R. Plissard,
Vigdis Toresen,
Michael T. Wimmer,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and…
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Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.
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Submitted 12 July, 2021; v1 submitted 17 November, 2016;
originally announced November 2016.