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Energy loss of terahertz electromagnetic waves by nano-sized connections in near-self-complementary metallic checkerboard patterns
Authors:
Keisuke Takano,
Yoku Tanaka,
Gabriel Moreno,
Abdallah Chahadih,
Abbas Ghaddar,
Xiang-Lei Han,
François Vaurette,
Yosuke Nakata,
Fumiaki Miyamaru,
Makoto Nakajima,
Masanori Hangyo,
Tahsin Akalin
Abstract:
The design of a self-complementary metallic checkerboard pattern achieves broadband, dispersion-less, and maximized absorption, concentrating in the deep subwavelength resistive connections between squares, without any theoretical limitation on the energy absorbing area. Here, we experimentally and numerically investigate the electromagnetic response in the limit of extremely small connections. We…
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The design of a self-complementary metallic checkerboard pattern achieves broadband, dispersion-less, and maximized absorption, concentrating in the deep subwavelength resistive connections between squares, without any theoretical limitation on the energy absorbing area. Here, we experimentally and numerically investigate the electromagnetic response in the limit of extremely small connections. We show that finite conductivity and randomness in a near-self-complementary checkerboard pattern plays a crucial role in producing a frequency-independent energy loss in the terahertz frequency region. Here metals behave like an almost perfect conductor. When the checkerboard pattern approaches the perfect self-complementary pattern, the perfect conductor approximation spontaneously breaks down, owing to the finite conductivity at the nano- scale connection, leading to broadband absorption. It is also shown that the random connections between metallic squares also lead to broadband and maximized energy loss through scattering loss, similar to finite conductivity.
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Submitted 10 August, 2017;
originally announced August 2017.
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Geometric and chemical components of the giant piezoresistance in silicon nanowires
Authors:
M. McClarty,
N. Jegenyes,
M. Gaudet,
C. Toccafondi,
R. Ossikovski,
F. Vaurette,
S. Arscott,
A. C. H. Rowe
Abstract:
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentrati…
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A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentration, electrostatic field effects, or surface chemistry. Here we observe all these PZR behaviors in a single set of nominally p-type, $\langle 110 \rangle$ oriented, top-down SiNWs at uniaxial tensile stresses up to 0.5 MPa. Longitudinal $π$-coefficients varying from $-800\times10^{-11}$ Pa$^{-1}$ to $3000\times10^{-11}$ Pa$^{-1}$ are measured. Micro-Raman spectroscopy on chemically treated nanowires reveals that stress concentration is the principal source of giant PZR. The sign and an excess PZR similar in magnitude to the bulk effect are related to the chemical treatment of the SiNW.
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Submitted 15 July, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology
Authors:
N. Clement,
G. Patriarche,
K. Smaali,
F. Vaurette,
K. Nishiguchi,
D. Troadec,
A. Fujiwara,
D. Vuillaume
Abstract:
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microsco…
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A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive x-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. We use the extended uniform array of nanodots as a new test-bed for molecular electronics devices.
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Submitted 22 June, 2011;
originally announced June 2011.
