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A high-efficiency programmable modulator for extreme ultraviolet light with nm feature size based on an electronic phase transition
Authors:
Igor Vaskivskyi,
Anze Mraz,
Rok Venturini,
Gregor Jecl,
Yevhenii Vaskivskyi,
Riccardo Mincigrucci,
Laura Foglia,
Dario De Angelis,
Jacopo-Stefano Pelli-Cresi,
Ettore Paltanin,
Danny Fainozzi,
Filippo Bencivenga,
Claudio Masciovecchio,
Dragan Mihailovic
Abstract:
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a…
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The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a sub-picosecond time-scale using EUV laser pulses and acts as a high-efficiency diffraction grating that deflects EUV or soft X-ray light. The imprinted nanostructure is stable after the removal of the exciting beams at low temperatures but can be easily erased by a single heating beam. Modeling shows that the efficiency of the device can exceed 1%, approaching state-of-the-art etched gratings, but with the benefit of being programmable and tunable over a large range of wavelengths. The observed effect is based on the rapid change of lattice constant upon transition between metastable electronically-ordered phases in a layered transition metal dichalcogenide. The proposed approach is potentially useful for creating tunable light modulators in the EUV and soft X-ray spectral ranges.
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Submitted 15 November, 2023;
originally announced November 2023.
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Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse
Authors:
Rok Venturini,
Anže Mraz,
Igor Vaskivskyi,
Yevhenii Vaskivskyi,
Damjan Svetin,
Tomaž Mertelj,
Leon Pavlovič,
**g Cheng,
Genyu Chen,
Priyanthi Amarasinghe,
Syed B. Qadri,
Sudhir B. Trivedi,
Roman Sobolewski,
Dragan Mihailovic
Abstract:
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was p…
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Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.
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Submitted 29 June, 2022; v1 submitted 28 February, 2022;
originally announced February 2022.
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Ultrafast manipulation of the NiO antiferromagnetic order via sub-gap optical excitation
Authors:
Xiaocui Wang,
Robin Y. Engel,
Igor Vaskivskyi,
Diego Turenne,
Vishal Shokeen,
Alexander Yaroslavtsev,
Oscar Grånäs,
Ronny Knut,
Jan O. Schunck,
Siarhei Dziarzhytski,
Günter Brenner,
Ru-Pan Wang,
Marion Kuhlmann,
Frederik Kuschewski,
Wibke Bronsch,
Christian Schüßler-Langeheine,
Andriy Styervoyedov,
Stuart S. P. Parkin,
Fulvio Parmigiani,
Olle Eriksson,
Martin Beye,
Hermann A. Dürr
Abstract:
Wide-band-gap insulators such as NiO offer the exciting prospect of coherently manipulating electronic correlations with strong optical fields. Contrary to metals where rapid dephasing of optical excitation via electronic processes occurs, the sub-gap excitation in charge-transfer insulators has been shown to couple to low-energy bosonic excitations. However, it is currently unknown if the bosonic…
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Wide-band-gap insulators such as NiO offer the exciting prospect of coherently manipulating electronic correlations with strong optical fields. Contrary to metals where rapid dephasing of optical excitation via electronic processes occurs, the sub-gap excitation in charge-transfer insulators has been shown to couple to low-energy bosonic excitations. However, it is currently unknown if the bosonic dressing field is composed of phonons or magnons. Here we use the prototypical charge-transfer insulator NiO to demonstrate that 1.5 eV sub-gap optical excitation leads to a renormalised NiO band-gap in combination with a significant reduction of the antiferromagnetic order. We employ element-specific X-ray reflectivity at the FLASH free-electron laser to demonstrate the reduction of the upper band-edge at the O 1s-2p core-valence resonance (K-edge) whereas the antiferromagnetic order is probed via X-ray magnetic linear dichroism (XMLD) at the Ni 2p-3d resonance (L2-edge). Comparing the transient XMLD spectral line shape to ground-state measurements allows us to extract a spin temperature rise of 65 +/- 5 K for time delays longer than 400 fs while at earlier times a non-equilibrium spin state is formed. We identify transient mid-gap states being formed during the first 200 fs accompanied by a band-gap reduction lasting at least up to the maximum measured time delay of 2.4 ps. Electronic structure calculations indicate that magnon excitations significantly contribute to the reduction of the NiO band gap.
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Submitted 10 January, 2022;
originally announced January 2022.
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Non-equilibrium self-assembly of spin-wave solitons in FePt nanoparticles
Authors:
D. Turenne,
A. Yaroslavtsev,
X. Wang,
V. Unikandanuni,
I. Vaskivskyi,
M. Schneider,
E. Jal,
R. Carley,
G. Mercurio,
R. Gort,
N. Agarwal,
B. Van Kuiken,
L. Mercadier,
J. Schlappa,
L. Le Guyader,
N. Gerasimova,
M. Teichmann,
D. Lomidze,
A. Castoldi,
D. Potorochin,
D. Mukkattukavil,
J. Brock,
N. Z. Hagström,
A. H. Reid,
X. Shen
, et al. (14 additional authors not shown)
Abstract:
Magnetic nanoparticles such as FePt in the L10-phase are the bedrock of our current data storage technology. As the grains become smaller to keep up with technological demands, the superparamagnetic limit calls for materials with higher magneto-crystalline anisotropy. This in turn reduces the magnetic exchange length to just a few nanometers enabling magnetic structures to be induced within the na…
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Magnetic nanoparticles such as FePt in the L10-phase are the bedrock of our current data storage technology. As the grains become smaller to keep up with technological demands, the superparamagnetic limit calls for materials with higher magneto-crystalline anisotropy. This in turn reduces the magnetic exchange length to just a few nanometers enabling magnetic structures to be induced within the nanoparticles. Here we describe the existence of spin-wave solitons, dynamic localized bound states of spin-wave excitations, in FePt nanoparticles. We show with time-resolved X-ray diffraction and micromagnetic modeling that spin-wave solitons of sub-10 nm sizes form out of the demagnetized state following femtosecond laser excitation. The measured soliton spin-precession frequency of 0.1 THz positions this system as a platform to develop miniature devices capable of filling the THz gap.
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Submitted 2 November, 2021;
originally announced November 2021.
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First-order kinetics bottleneck during photoinduced ultrafast insulator-metal transition in 3D orbitally-driven Peierls insulator CuIr$_{2}$S$_{4}$
Authors:
M. Naseska,
P. Sutar,
Y. Vaskivskyi,
I. Vaskivskyi,
D. Vengust,
D. Svetin,
V. V. Kabanov,
D. Mihailovic,
T. Mertelj
Abstract:
The spinel-structure CuIr$_{2}$S$_{4}$ compound displays a rather unusual orbitally-driven three-dimensional Peierls-like insulator-metal transition. The low-T symmetry-broken insulating state is especially interesting due to the existence of a metastable irradiation-induced disordered weakly conducting state. Here we study intense femtosecond optical pulse irradiation effects by means of the all-…
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The spinel-structure CuIr$_{2}$S$_{4}$ compound displays a rather unusual orbitally-driven three-dimensional Peierls-like insulator-metal transition. The low-T symmetry-broken insulating state is especially interesting due to the existence of a metastable irradiation-induced disordered weakly conducting state. Here we study intense femtosecond optical pulse irradiation effects by means of the all-optical ultrafast multi-pulse time-resolved spectroscopy. We show that the structural coherence of the low-T broken symmetry state is strongly suppressed on a sub-picosecond timescale above a threshold excitation fluence resulting in a structurally inhomogeneous transient state which persists for several-tens of picoseconds before reverting to the low-T disordered weakly conducting state. The electronic order shows a transient gap filling at a significantly lower fluence threshold. The data suggest that the photoinduced-transition dynamics to the high-T metallic phase is governed by first-order-transition nucleation kinetics that prevents the complete ultrafast structural transition even when the absorbed energy significantly exceeds the equilibrium enthalpy difference to the high-T metallic phase. In contrast, the dynamically-decoupled electronic order is transiently suppressed on a sub-picosecond timescale rather independently due to a photoinduced Mott transition.
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Submitted 8 April, 2021;
originally announced April 2021.
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Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices
Authors:
Anze Mraz,
Rok Venturini,
Michele Diego,
Andrej Kranjec,
Damjan Svetin,
Yaroslav Gerasimenko,
Vitomir Sever,
Ian A. Mihailovic,
Jan Ravnik,
Igor Vaskivskyi,
Maria D'Antuono,
Daniela Stornaiulo,
Francesco Tafuri,
Dimitrios Kazazis,
Yasin Ekinci,
Dragan Mihailovic
Abstract:
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile…
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Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.
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Submitted 8 March, 2021;
originally announced March 2021.
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Quantum billiards with correlated electrons confined in triangular transition metal dichalcogenide monolayer nanostructures created by laser quench
Authors:
Jan Ravnik,
Yevhenii Vaskivskyi,
Jaka Vodeb,
Polona Aupič,
Igor Vaskivskyi,
Denis Golež,
Yaroslav Gerasimenko,
Viktor Kabanov,
Dragan Mihailovic
Abstract:
Forcing systems though fast non-equilibrium phase transitions offers the opportunity to study new states of quantum matter that self-assemble in their wake. Here we study the quantum interference effects of correlated electrons confined in monolayer quantum nanostructures, created by femtosecond laser-induced quench through a first-order polytype structural transition in a layered transition-metal…
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Forcing systems though fast non-equilibrium phase transitions offers the opportunity to study new states of quantum matter that self-assemble in their wake. Here we study the quantum interference effects of correlated electrons confined in monolayer quantum nanostructures, created by femtosecond laser-induced quench through a first-order polytype structural transition in a layered transition-metal dichalcogenide material. Scanning tunnelling microscopy of the electrons confined within equilateral triangles, whose dimensions are a few crystal unit cells on the side, reveals that the trajectories are strongly modified from free-electron states both by electronic correlations and confinement. Comparison of experiments with theoretical predictions of strongly correlated electron behaviour reveals that the confining geometry destabilizes the Wigner/Mott crystal ground state, resulting in mixed itinerant and correlation-localized states intertwined on a length scale of 1 nm. Occasionally, itinerant-electron states appear to follow quantum interferences which are suggestive of classical trajectories (quantum scars). The work opens the path toward understanding the quantum transport of electrons confined in atomic-scale monolayer structures based on correlated-electron-materials.
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Submitted 12 February, 2021;
originally announced February 2021.
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A time-domain phase diagram of metastable states in a charge ordered quantum material
Authors:
Jan Ravnik,
Michele Diego,
Yaroslav Gerasimenko,
Yevhenii Vaskivskyi,
Igor Vaskivskyi,
Tomaz Mertelj,
Jaka Vodeb,
Dragan Mihailovic
Abstract:
Metastable self-organized electronic states in quantum materials are of fundamental importance, displaying emergent dynamical properties that may be used in new generations of sensors and memory devices. Such states are typically formed through phase transitions under non-equilibrium conditions and the final state is reached through processes that span a large range of timescales. By using time-re…
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Metastable self-organized electronic states in quantum materials are of fundamental importance, displaying emergent dynamical properties that may be used in new generations of sensors and memory devices. Such states are typically formed through phase transitions under non-equilibrium conditions and the final state is reached through processes that span a large range of timescales. By using time-resolved optical techniques and femtosecond-pulse-excited scanning tunneling microscopy (STM), the evolution of the metastable states in the quasi-two-dimensional dichalcogenide 1T-TaS2 is mapped out on a temporal phase diagram using the photon density and temperature as control parameters on timescales ranging from 10^(-12) to 10^3 s. The introduction of a time-domain axis in the phase diagram enables us to follow the evolution of metastable emergent states created by different phase transition mechanisms on different timescales, thus enabling comparison with theoretical predictions of the phase diagram and opening the way to understanding of the complex ordering processes in metastable materials.
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Submitted 2 November, 2020;
originally announced November 2020.
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Ultrafast modification of the electronic structure of a correlated insulator
Authors:
O. Grånäs I. Vaskivskyi,
X. Wang,
P. Thunström,
S. Ghimire,
R. Knut,
J. Söderström,
L. Kjellsson,
D. Turenne,
R. Y. Engel,
M. Beye,
J. Lu,
A. H. Reid,
W. Schlotter,
G. Coslovich,
M. Hoffmann,
G. Kolesov,
C. Schüßler-Langeheine,
A. Styervoyedov,
N. Tancogne-Dejean,
M. A. Sentef,
D. A. Reis,
A. Rubio,
S. S. P. Parkin,
O. Karis,
J. Nordgren
, et al. (3 additional authors not shown)
Abstract:
A non-trivial balance between Coulomb repulsion and kinematic effects determines the electronic structure of correlated electron materials. The use electromagnetic fields strong enough to rival these native microscopic interactions allows us to study the electronic response as well as the timescales and energies involved in using quantum effects for possible applications. We use element-specific t…
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A non-trivial balance between Coulomb repulsion and kinematic effects determines the electronic structure of correlated electron materials. The use electromagnetic fields strong enough to rival these native microscopic interactions allows us to study the electronic response as well as the timescales and energies involved in using quantum effects for possible applications. We use element-specific transient x-ray absorption spectroscopy and high-harmonic generation to measure the response to ultrashort off-resonant optical fields in the prototypical correlated electron insulator NiO. Surprisingly, fields of up to 0.22 V/Å leads to no detectable changes on the correlated Ni 3d-orbitals contrary to previous predictions. A transient directional charge transfer is uncovered, a behavior that is captured by first-principles theory. Our results highlight the importance of retardation effects in electronic screening, and pinpoints a key challenge in functionalizing correlated materials for ultrafast device operation.
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Submitted 26 December, 2021; v1 submitted 25 August, 2020;
originally announced August 2020.
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Ultrafast magnetization dynamics in half-metallic Co$_2$FeAl Heusler alloy
Authors:
R. S. Malik,
E. K. Delczeg-Czirjak,
D. Thonig,
R. Knut,
I. Vaskivskyi,
R. Gupta,
S. Jana,
R. Stefanuik,
Y. O. Kvashnin,
S. Husain,
A. Kumar,
P. Svedlindh,
J. Söderström,
O. Eriksson,
O. Karis
Abstract:
We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent…
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We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent of varying structural order, and that it is similar to that in elemental 3d ferromagnets. In contrast, the slower process of magnetization recovery, specified by $τ_{R}$, is found to occur on picosecond time scales, and is demonstrated to correlate strongly with the Gilbert dam** parameter ($α$). Our results show that $\mathrm{Co_{2}FeAl}$ is unique, in that it is the first material that clearly demonstrates the importance of the dam** parameter in the remagnetization process. Based on these results we argue that for $\mathrm{Co_{2}FeAl}$ the remagnetization process is dominated by magnon dynamics, something which might have general applicability.
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Submitted 27 February, 2020;
originally announced February 2020.
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Theoretical Modeling of the Non-equilibrium Amorphous State in 1T-TaS$_2$
Authors:
Jaka Vodeb,
Viktor V. Kabanov,
Yaroslav Gerasimenko,
Igor Vaskivskyi,
Jan Ravnik,
Dragan Mihailovic
Abstract:
1T-TaS$_2$ is known for it's remarkably complex phase diagram and it's unique long-lived metastable hidden (H) state. Recently, a novel metastable state has been discovered using higher fluences for photoexcitation than in the case of the H state. The state has been dubbed as amorphous (A) due to it's similarity to glass. Expanding on the work of Brazovskii and Karpov, we show that the A state can…
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1T-TaS$_2$ is known for it's remarkably complex phase diagram and it's unique long-lived metastable hidden (H) state. Recently, a novel metastable state has been discovered using higher fluences for photoexcitation than in the case of the H state. The state has been dubbed as amorphous (A) due to it's similarity to glass. Expanding on the work of Brazovskii and Karpov, we show that the A state can be successfully modelled with classical interacting polarons on a two-dimensional hexagonal lattice. We have found that the polaron configuration of the A state corresponds to a frustrated screened Coulomb system, where there is no order-disorder phase transition.
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Submitted 16 July, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Ultrafast jamming of electrons into an amorphous entangled state
Authors:
Yaroslav Gerasimenko,
Igor Vaskivskyi,
Jan Ravnik,
Jaka Vodeb,
Viktor V. Kabanov,
Dragan Mihailovic
Abstract:
New emergent states of matter in quantum systems may be created under non-equilibrium conditions if - through many body interactions - its constituents order on a timescale which is shorter than the time required for the system to reach thermal equilibrium. Conventionally non-equilibrium ordering is discussed in terms of symmetry breaking, nonthermal order-disorder, and more recently quenched topo…
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New emergent states of matter in quantum systems may be created under non-equilibrium conditions if - through many body interactions - its constituents order on a timescale which is shorter than the time required for the system to reach thermal equilibrium. Conventionally non-equilibrium ordering is discussed in terms of symmetry breaking, nonthermal order-disorder, and more recently quenched topological transitions. Here we report a fundamentally new and unusual metastable form of amorphous correlation-localized fermionic matter, which is formed in a new type of quantum transition at low temperature either by short pulse photoexcitation or by electrical charge injection in the transition metal dichalcogenide 1T-TaS2. Scanning tunnelling microscopy (STM) reveals a pseudo-amorphous packing of localized electrons within the crystal lattice that is significantly denser than its hexagonally ordered low-temperature ground state, or any other ordered states of the system. Remarkably, the arrangement is not random, but displays a hyperuniform spatial density distribution commonly encountered in classical jammed systems, showing no signs of aggregation or phase separation. Unexpectedly for a localized electron system, tunnelling spectroscopy and multi- STM-tip surface resistance measurements reveal that the overall state is gapless and conducting, which implies that localized and itinerant carriers are resonantly entangled. The amorphous localized electron subsystem can be understood theoretically to arise from strong correlations between polarons sparsely dispersed on a 2D hexagonal atomic lattice, while itinerant carriers act as a resonantly coupled reservoir distinct in momentum space.
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Submitted 1 March, 2018;
originally announced March 2018.
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Real-time observation of the coherent transition to a metastable emergent state in 1T-TaS$_2$
Authors:
Jan Ravnik,
Igor Vaskivskyi,
Tomaz Mertelj,
Dragan Mihailovic
Abstract:
The transition to a hidden metastable state in 1T-TaS2 is investigated in real time using coherent time-resolved femtosecond spectroscopy. Relying on spectral differences between phonon modes in the equilibrium states and in the metastable state, and temperature-tuning the metastable state lifetime, we perform stroboscopic measurements of the electronic response and switching of coherent oscillati…
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The transition to a hidden metastable state in 1T-TaS2 is investigated in real time using coherent time-resolved femtosecond spectroscopy. Relying on spectral differences between phonon modes in the equilibrium states and in the metastable state, and temperature-tuning the metastable state lifetime, we perform stroboscopic measurements of the electronic response and switching of coherent oscillation frequency through the transition. Very fast coherent switching of the collective mode frequency is observed (400 fs), comparable to the electronic timescale (300 fs). A slower, 4.7 ps process is attributed to lattice relaxation. The observations are described well by a fast electronic band structure transformation into the metastable state, consistent with a topological transition.
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Submitted 10 November, 2017;
originally announced November 2017.
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Intertwined chiral charge orders and topological stabilization of the light-induced state of a prototypical transition metal dichalcogenide
Authors:
Yaroslav A. Gerasimenko,
Peter Karpov,
Igor Vaskivskyi,
Serguei Brazovskii,
Dragan Mihailovic
Abstract:
The fundamental idea that the constituents of interacting many body systems in complex quantum materials may self-organise into long range order under highly non-equilibrium conditions leads to the notion that entirely new and unexpected functionalities might be artificially created. However, demonstrating new emergent order in highly non-equilibrium transitions has proven surprisingly difficult.…
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The fundamental idea that the constituents of interacting many body systems in complex quantum materials may self-organise into long range order under highly non-equilibrium conditions leads to the notion that entirely new and unexpected functionalities might be artificially created. However, demonstrating new emergent order in highly non-equilibrium transitions has proven surprisingly difficult. In spite of huge recent advances in experimental ultrafast time-resolved techniques, methods that average over successive transition outcomes have so far proved incapable of elucidating the emerging spatial structure. Here, using scanning tunneling microscopy, we report for the first time the charge order emerging after a single transition outcome in a prototypical two-dimensional dichalcogenide 1T-TaS$_2$ initiated by a single optical pulse. By map** the vector field of charge displacements of the emergent state, we find surprisingly intricate, long-range, topologically non-trivial charge order in which chiral domain tiling is intertwined with unique unpaired dislocations which play a crucial role in enhancing the emergent states remarkable stability. The discovery of the principles that lead to metastability in charge-ordered systems open the way to designing novel emergent functionalities, particularly ultrafast all-electronic non-volatile cryo-memories.
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Submitted 12 September, 2019; v1 submitted 26 April, 2017;
originally announced April 2017.
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Three-dimensional resistivity switching between correlated electronic states in 1T-TaS2
Authors:
Damjan Svetin,
Igor Vaskivskyi,
Serguei Brazovskii,
Dragan Mihailovic
Abstract:
Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states o…
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Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer orbitronic re-ordering of its helical stacking structure. We report on the switching properties both in-plane and perpendicular to the layers by current-pulse injection, the anisotropy of electronic transport in the commensurate ground state, and relaxation properties of the switched metastable state. Contrary to recent theoretical calculations, which predict a uni-directional metal perpendicular to the layers, we observe a large resistivity in this direction, with a temperature-dependent anisotropy. Remarkably, large resistance ratios are observed in the memristive switching both in-plane (IP) and out-of-plane (OP). The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.
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Submitted 20 March, 2016;
originally announced March 2016.
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Multichannel photodiode detector for ultrafast optical spectroscopy
Authors:
T. Mertelj,
N. Vujičić,
T. Borzda,
I. Vaskivskyi,
A. Pogrebna,
D. Mihailovic
Abstract:
Construction and characterization of a multichannel photodiode detector based on commercially available components with high signal to noise of $\sim10^{6}$ and a rapid frame rate, suitable for time resolved femtosecond spectroscopy with high repetition femtosecond sources, is presented.
Construction and characterization of a multichannel photodiode detector based on commercially available components with high signal to noise of $\sim10^{6}$ and a rapid frame rate, suitable for time resolved femtosecond spectroscopy with high repetition femtosecond sources, is presented.
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Submitted 17 October, 2014;
originally announced October 2014.
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Fast non-thermal switching between macroscopic charge-ordered quantum states induced by charge injection
Authors:
I. Vaskivskyi,
I. A. Mihailovic,
S. Brazovskii,
J. Gospodaric,
T. Mertelj,
D. Svetin,
P. Sutar,
D. Mihailovic
Abstract:
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with a degener- ate ground state in magnetic or ferroelectric materials. Another possibility is offered by phase transitions with switching between metallic and insu…
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The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with a degener- ate ground state in magnetic or ferroelectric materials. Another possibility is offered by phase transitions with switching between metallic and insulating phases, but classical phase transitions are limited in speed by slow nucleation, proliferation of domains and hysteresis. We can in principle avoid these problems by using quantum states for switching, but microscopic systems suffer from decoherence which prohibits their use in everyday devices. Macroscopic quantum states, such as the superconducting ground state have the advantage that on a fundamental level they do not suffer from decoherence plaguing microscopic systems. Here we demonstrate for the first time ultrafast non-thermal switching between different metastable electronically ordered states by pulsed electrical charge injection. The macroscopic nature of the many-body quantum states(1-4) - which are not part of the equilibrium phase diagram - gives rise to unprecedented stability and remarka- bly sharp switching thresholds. Fast sub-50 ps switching, large associated re- sistance changes, 2-terminal operation and demonstrable high fidelity of bi-stability control suggest new opportunities for the use of macroscopic quantum states in electronics, particularly for an ultrafast non-volatile quantum charge-order resistive random access memory (QCOR-RAM).
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Submitted 12 September, 2014;
originally announced September 2014.
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The effect of strain on the thawing of the hidden state and other transitions in 1T-TaS2
Authors:
Damjan Svetin,
Igor Vaskivskyi,
Petra Sutar,
Jan Gospodaric,
Tomaz Mertelj,
Dragan Mihailovic
Abstract:
We investigate the effect of 2-dimensional (in-plane) strain on the critical transition temperature TH from the photoexcited hidden state in 1T-TaS$_2$ thin films on different substrates. We also measure the effect of in-plane strain on the transition temperature $T_{c2}$ between the nearly commensurate charge-density wave state and the commensurate state near 200 K. In each case, the strain is ca…
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We investigate the effect of 2-dimensional (in-plane) strain on the critical transition temperature TH from the photoexcited hidden state in 1T-TaS$_2$ thin films on different substrates. We also measure the effect of in-plane strain on the transition temperature $T_{c2}$ between the nearly commensurate charge-density wave state and the commensurate state near 200 K. In each case, the strain is caused by the differential contraction of the sample and the substrate, and ranges from 0.5 % compressive strain (CaF$_2$) to 2 % tensile strain (sapphire). Strain appears to have an opposite effect on the H state and the NC-C state transitions. TH shows a large and negative strain coefficient of dT$_H$/de = - 8900+/-500 K, while $T_{c2}$ is not strongly affected by tensile strain and shows a positive coefficient for compressive strain, which is opposite to the effect observed for hydrostatic pressure.
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Submitted 5 June, 2014;
originally announced June 2014.
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Ultrafast switching to a stable hidden topologically protected quantum state in an electronic crystal
Authors:
L. Stojchevska,
I. Vaskivskyi,
T. Mertelj,
P. Kusar,
D. Svetin,
S. Brazovskii,
D. Mihailovic
Abstract:
Hidden states of matter with novel and unusual properties may be created if a system out of equilibrium can be induced to follow a trajectory to a state which is inaccessible or does not even exist under normal equilibrium conditions. Here we report on the discovery of a hidden (H) topologically protected electronic state in a layered dichalcogenide 1T-TaS2 crystal reached as a result of a quench…
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Hidden states of matter with novel and unusual properties may be created if a system out of equilibrium can be induced to follow a trajectory to a state which is inaccessible or does not even exist under normal equilibrium conditions. Here we report on the discovery of a hidden (H) topologically protected electronic state in a layered dichalcogenide 1T-TaS2 crystal reached as a result of a quench caused by a single 35 fs laser pulse. The properties of the H state are markedly different from any other state of the system: it exhibits a large drop of electrical resistance, strongly modified single particle and collective mode spectra and a marked change of optical reflectivity. Particularly important and unusual, the H state is stable for an arbitrarily long time until a laser pulse, electrical current or thermal erase procedure is applied, causing it to revert to the thermodynamic ground state. Major observed events can be reproduced by a kinetic model describing the conversion of photo excited electrons and holes into an electronically ordered crystal, thus converting a Mott insulator to a conducting H state. Its long-time stability follows from the topological protection of the number of periods in the electronic crystal.
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Submitted 7 April, 2014; v1 submitted 27 January, 2014;
originally announced January 2014.
