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Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Authors:
Gianluca Aglieri Rinella,
Giacomo Alocco,
Matias Antonelli,
Roberto Baccomi,
Stefania Maria Beole,
Mihail Bogdan Blidaru,
Bent Benedikt Buttwill,
Eric Buschmann,
Paolo Camerini,
Francesca Carnesecchi,
Marielle Chartier,
Yongjun Choi,
Manuel Colocci,
Giacomo Contin,
Dominik Dannheim,
Daniele De Gruttola,
Manuel Del Rio Viera,
Andrea Dubla,
Antonello di Mauro,
Maurice Calvin Donner,
Gregor Hieronymus Eberwein,
Jan Egger,
Laura Fabbietti,
Finn Feindt,
Kunal Gautam
, et al. (69 additional authors not shown)
Abstract:
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25…
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Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
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Submitted 13 March, 2024;
originally announced March 2024.
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A Digital Silicon Photomultiplier
Authors:
Inge Diehl,
Finn Feindt,
Karsten Hansen,
Stephan Lachnit,
Frauke Poblotzki,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges trig…
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Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche Diodes (SPADs), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAD level.
A digital SiPM (dSiPM) was designed at Deutsches Elektronen Synchrotron (DESY), combining a SPAD array with embedded CMOS circuitry for on-chip signal processing. A key feature of the DESY dSiPM is its capability to provide hit-position information on pixel level, and one hit time stamp per quadrant at a 3 MHz readout-frame rate. The pixels comprise four SPADs and have a pitch of about 70 um. The four time stamps are provided by 12 bit Time-to-Digital Converters (TDCs) with a resolution better than 100 ps.
The chip was characterized in the laboratory to determine dark count rate, breakdown voltage, and TDC characteristics. Test-beam measurements are analyzed to assess the DESY dSiPMs performance in the context of a 4D-tracking applications. The results demonstrate a spatial hit resolution on a pixel level, a minimum-ionizing particle detection efficiency of about 30 % and a time resolution in the order of 50 ps.
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Submitted 19 February, 2024;
originally announced February 2024.
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Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch
Authors:
I. Diehl,
K. Hansen,
T. Vanat,
G. Vignola,
F. Feindt,
D. Rastorguev,
S. Spannagel
Abstract:
This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stam** and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sha…
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This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stam** and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30$~\%$. A sub-100$~$ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3$~$MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4$~$Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.
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Submitted 22 November, 2023;
originally announced November 2023.
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DTS-100G -- A versatile heterogeneous MPSoC board for cryogenic sensor readout
Authors:
Timo Muscheid,
Artur Boebel,
Nick Karcher,
Tomas Vanat,
Luis Ardila-Perez,
Igor Cheviakov,
Michael Schleicher,
Manfred Zimmer,
Matthias Balzer,
Oliver Sander
Abstract:
Heterogeneous devices such as the Multi-Processor System-on-Chip (MPSoC) from Xilinx are extremely valuable in custom instrumentation systems. This contribution presents the joint development of a heterogeneous MPSoC board called DTS-100G by DESY and KIT. The board is built around a Xilinx Zynq Ultrascale+ chip offering all available high-speed transceivers using QSFP28, 28 Gbps FireFly, FMC, and…
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Heterogeneous devices such as the Multi-Processor System-on-Chip (MPSoC) from Xilinx are extremely valuable in custom instrumentation systems. This contribution presents the joint development of a heterogeneous MPSoC board called DTS-100G by DESY and KIT. The board is built around a Xilinx Zynq Ultrascale+ chip offering all available high-speed transceivers using QSFP28, 28 Gbps FireFly, FMC, and FMC+ interfaces. The board is not designed for a particular application, but can be used as a generic DAQ platform for a variety of physics experiments. The DTS-100G board was successfully developed, built, and commissioned. ECHo-100k is the first experiment which will employ the board. This contribution shows the system architecture and explains how the DTS-100G board is a crucial component in the DAQ chain.
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Submitted 25 January, 2023;
originally announced January 2023.
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Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
Authors:
Katharina Dort,
Rafael Ballabriga,
Justus Braach,
Eric Buschmann,
Michael Campbell,
Dominik Dannheim,
Lennart Huth,
Iraklis Kremastiotis,
Jens Kröger,
Lucie Linssen,
Magdalena Munker,
Walter Snoeys,
Simon Spannagel,
Peter Švihra,
Tomas Vanat
Abstract:
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams ar…
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Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
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Submitted 30 August, 2022; v1 submitted 22 April, 2022;
originally announced April 2022.
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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
Authors:
Rafael Ballabriga,
Justus Braach,
Eric Buschmann,
Michael Campbell,
Dominik Dannheim,
Katharina Dort,
Lennart Huth,
Iraklis Kremastiotis,
Jens Kröger,
Lucie Linssen,
Magdalena Munker,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Tomas Vanat
Abstract:
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and produc…
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An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective on the optimisation and characterisation of silicon sensors.
In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix Squared framework are presented for a monolithic CMOS pixel sensor with a small collection diode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.
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Submitted 9 February, 2022; v1 submitted 7 February, 2022;
originally announced February 2022.
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First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors
Authors:
ALICE ITS project,
:,
G. Aglieri Rinella,
M. Agnello,
B. Alessandro,
F. Agnese,
R. S. Akram,
J. Alme,
E. Anderssen,
D. Andreou,
F. Antinori,
N. Apadula,
P. Atkinson,
R. Baccomi,
A. Badalà,
A. Balbino,
C. Bartels,
R. Barthel,
F. Baruffaldi,
I. Belikov,
S. Beole,
P. Becht,
A. Bhatti,
M. Bhopal,
N. Bianchi
, et al. (230 additional authors not shown)
Abstract:
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to ra…
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A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to radii of about 2cm without any signs of mechanical or electrical damage. During a subsequent characterisation using a 5.4GeV electron beam, it was further confirmed that they preserve their full electrical functionality as well as particle detection performance.
In this article, the bending procedure and the setup used for characterisation are detailed. Furthermore, the analysis of the beam test, including the measurement of the detection efficiency as a function of beam position and local inclination angle, is discussed. The results show that the sensors maintain their excellent performance after bending to radii of 2cm, with detection efficiencies above 99.9% at typical operating conditions, paving the way towards a new class of detectors with unprecedented low material budget and ideal geometrical properties.
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Submitted 17 August, 2021; v1 submitted 27 May, 2021;
originally announced May 2021.
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Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
Authors:
R. Ballabriga,
E. Buschmann,
M. Campbell,
D. Dannheim,
K. Dort,
N. Egidos,
L. Huth,
I. Kremastiotis,
J. Kröger,
L. Linssen,
X. Llopart,
M. Munker,
A. Nürnberg,
W. Snoeys,
S. Spannagel,
T. Vanat,
M. Vicente,
M. Williams
Abstract:
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the trackin…
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The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of $16\times128$ detection channels measuring $300 \times 30$ microns. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sendor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to $(5.8 \pm 0.1)$ ns and a spatial resolution down to $(4.6 \pm 0.2)$ microns are measured. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons.
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Submitted 8 February, 2021;
originally announced February 2021.
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Corryvreckan: A Modular 4D Track Reconstruction and Analysis Software for Test Beam Data
Authors:
Dominik Dannheim,
Katharina Dort,
Lennart Huth,
Daniel Hynds,
Iraklis Kremastiotis,
Jens Kröger,
Magdalena Munker,
Florian Pitters,
Paul Schütze,
Simon Spannagel,
Tomas Vanat,
Morag Williams
Abstract:
Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from m…
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Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from multiple devices based on timestamps.
Hit timing information, available with high precision from an increasing number of detectors, can be used in clustering and tracking to reduce combinatorics. Several algorithms, including an implementation of Millepede-II, are provided for offline alignment. A graphical user interface enables direct monitoring of the reconstruction progress and can be employed for quasi-online monitoring during data taking.
This work introduces the Corryvreckan framework architecture and user interface, and provides a detailed overview of the event building algorithm. The reconstruction and analysis capabilities are demonstrated with data recorded at the DESY II Test Beam Facility using the EUDAQ2 data acquisition framework with an EUDET-type beam telescope, a Timepix3 timing reference, a fine-pitch planar silicon sensor with CLICpix2 readout and the AIDA Trigger Logic Unit. The individual steps of the reconstruction chain are presented in detail.
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Submitted 13 January, 2021; v1 submitted 25 November, 2020;
originally announced November 2020.
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Detector Technologies for CLIC
Authors:
A. C. Abusleme Hoffman,
G. Parès,
T. Fritzsch,
M. Rothermund,
H. Jansen,
K. Krüger,
F. Sefkow,
A. Velyka,
J. Schwandt,
I. Perić,
L. Emberger,
C. Graf,
A. Macchiolo,
F. Simon,
M. Szalay,
N. van der Kolk,
H. Abramowicz,
Y. Benhammou,
O. Borysov,
M. Borysova,
A. Joffe,
S. Kananov,
A. Levy,
I. Levy,
G. Eigen
, et al. (107 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan…
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The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.
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Submitted 7 May, 2019;
originally announced May 2019.
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The Compact Linear Collider (CLIC) - 2018 Summary Report
Authors:
The CLIC,
CLICdp collaborations,
:,
T. K. Charles,
P. J. Giansiracusa,
T. G. Lucas,
R. P. Rassool,
M. Volpi,
C. Balazs,
K. Afanaciev,
V. Makarenko,
A. Patapenka,
I. Zhuk,
C. Collette,
M. J. Boland,
A. C. Abusleme Hoffman,
M. A. Diaz,
F. Garay,
Y. Chi,
X. He,
G. Pei,
S. Pei,
G. Shu,
X. Wang,
J. Zhang
, et al. (671 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the…
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The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the detector. CLIC is foreseen to be built and operated in stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. CLIC uses a two-beam acceleration scheme, in which 12 GHz accelerating structures are powered via a high-current drive beam. For the first stage, an alternative with X-band klystron powering is also considered. CLIC accelerator optimisation, technical developments and system tests have resulted in an increased energy efficiency (power around 170 MW) for the 380 GeV stage, together with a reduced cost estimate at the level of 6 billion CHF. The detector concept has been refined using improved software tools. Significant progress has been made on detector technology developments for the tracking and calorimetry systems. A wide range of CLIC physics studies has been conducted, both through full detector simulations and parametric studies, together providing a broad overview of the CLIC physics potential. Each of the three energy stages adds cornerstones of the full CLIC physics programme, such as Higgs width and couplings, top-quark properties, Higgs self-coupling, direct searches, and many precision electroweak measurements. The interpretation of the combined results gives crucial and accurate insight into new physics, largely complementary to LHC and HL-LHC. The construction of the first CLIC energy stage could start by 2026. First beams would be available by 2035, marking the beginning of a broad CLIC physics programme spanning 25-30 years.
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Submitted 6 May, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
