Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
Authors:
Ying Tan,
Shengpu Niu,
Maximilien Billet,
Nishant Singh,
Margot Niels,
Tom Vanackere,
Joris Van Kerrebrouck,
Gunther Roelkens,
Bart Kuyken,
Dries Van Thourhout
Abstract:
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lit…
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Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.
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Submitted 26 November, 2023;
originally announced November 2023.
Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films
Authors:
Tom Vandekerckhove,
Tom Vanackere,
Jasper De Witte,
Stijn Cuyvers,
Luis Reis,
Maximilien Billet,
Günther Roelkens,
Stéphane Clemmen,
Bart Kuyken
Abstract:
High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yie…
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High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yield. We present a new source preparation method that enables reliable transfer printing of thin-film lithium niobate. We demonstrate its versatility by successfully applying it to gallium phosphide and silicon, and provide an estimate of the transfer yield by subsequently printing 25 lithium niobate films without fail.
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Submitted 26 April, 2023;
originally announced April 2023.
