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Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy
Authors:
Isaac M. Craig,
Madeline Van Winkle,
Colin Ophus,
D. Kwabena Bediako
Abstract:
Bragg interferometry (BI) is an imaging technique based on four-dimensional scanning electron microscopy (4D-STEM) wherein the intensities of select overlap** Bragg disks are fit or more qualitatively analyzed in the context of simple trigonometric equations to determine local stacking order. In 4D-STEM based approaches, the collection of full diffraction patterns at each real-space position of…
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Bragg interferometry (BI) is an imaging technique based on four-dimensional scanning electron microscopy (4D-STEM) wherein the intensities of select overlap** Bragg disks are fit or more qualitatively analyzed in the context of simple trigonometric equations to determine local stacking order. In 4D-STEM based approaches, the collection of full diffraction patterns at each real-space position of the scanning probe allows the use of precise virtual apertures much smaller and more variable in shape than those used in conventional dark field imaging, such that even buried interfaces marginally twisted from other layers can be targeted. A coarse-grained form of dark field ptychography, BI uses simple physically derived fitting functions to extract the average structure within the illumination region and is therefore viable over large fields of view. BI has shown a particular advantage for selectively investigating the interlayer stacking and associated moiré reconstruction of bilayer interfaces within complex multi-layered structures. This has enabled investigation of reconstruction and substrate effects in bilayers through encapsulating hexagonal boron nitride and of select bilayer interfaces within trilayer stacks. However, the technique can be improved to provide a greater spatial resolution and probe a wider range of twisted structures, for which current limitations on acquisition parameters can lead to large illumination regions and the computationally involved post-processing can fail. Here we analyze these limitations and the computational processing in greater depth, presenting a few methods for improvement over previous works, discussing potential areas for further expansion, and illustrating the current capabilities of this approach for extracting moiré-scale strain.
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Submitted 6 June, 2024;
originally announced June 2024.
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Atomic engineering of interfacial polarization switching in van der Waals multilayers
Authors:
Madeline Van Winkle,
Nikita Dowlatshahi,
Nikta Khaloo,
Mrinalni Iyer,
Isaac M. Craig,
Rohan Dhall,
Takashi Taniguchi,
Kenji Watanabe,
D. Kwabena Bediako
Abstract:
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. H…
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In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here, we show that introducing interlayer rotations in multilayer vdW heterostructures modulates both the spatial ordering and switching dynamics of polar domains, engendering unique tunability that is unparalleled in conventional bulk ferroelectrics or polar bilayers. Using operando transmission electron microscopy we show how changing the relative rotations of three WSe2 layers produces structural polytypes with distinct arrangements of polar domains, leading to either a global or localized switching response. Introducing uniaxial strain generates structural anisotropy that yields a range of switching behaviors, coercivities, and even tunable biased responses. We also provide evidence of physical coupling between the two interfaces of the trilayer, a key consideration for controlling switching dynamics in polar multilayer structures more broadly.
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Submitted 28 November, 2023;
originally announced November 2023.
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Local atomic stacking and symmetry in twisted graphene trilayers
Authors:
Isaac M. Craig,
Madeline Van Winkle,
Catherine Groschner,
Kaidi Zhang,
Nikita Dowlatshahi,
Ziyan Zhu,
Takashi Taniguchi,
Kenji Watanabe,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has…
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Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has been suggested to play a major role in the relative versatility of superconductivity in trilayers. Here, we exploit an inteferometric 4D-STEM approach to image a wide range of trilayer graphene structures. Our results unveil a considerably different model for moiré lattice relaxation in trilayers than that proposed from previous measurements, informing a thorough understanding of how reconstruction modulates the atomic stacking symmetries crucial for establishing superconductivity and other correlated phases in twisted graphene trilayers.
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Submitted 6 June, 2024; v1 submitted 16 March, 2023;
originally announced March 2023.
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Rotational and Dilational Reconstruction in Transition Metal Dichalcogenide Moiré Bilayers
Authors:
Madeline Van Winkle,
Isaac M. Craig,
Stephen Carr,
Medha Dandu,
Karen C. Bustillo,
Jim Ciston,
Colin Ophus,
Takashi Taniguchi,
Kenji Watanabe,
Archana Raja,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Lattice reconstruction and corresponding strain accumulation play a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechan…
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Lattice reconstruction and corresponding strain accumulation play a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechanisms have relied on simulations. Here, we use interferometric four-dimensional scanning transmission electron microscopy to quantitatively map the mechanical deformations through which reconstruction occurs in small-angle twisted bilayer MoS2 and WSe2/MoS2 heterobilayers. We provide direct evidence that local rotations govern relaxation for twisted homobilayers, while local dilations are prominent in heterobilayers possessing a sufficiently large lattice mismatch. Encapsulation of the moiré layers in hBN further localizes and enhances these in-plane reconstruction pathways, suppressing out-of-plane corrugation. We also find that extrinsic uniaxial heterostrain, which introduces a lattice constant difference in twisted homobilayers, leads to accumulation and redistribution of reconstruction strain, demonstrating another route to modify the moiré potential.
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Submitted 10 April, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
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Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide
Authors:
Samra Husremović,
Katherine Inzani,
Catherine K. Groschner,
Isaac M. Craig,
Karen C. Bustillo,
Peter Ercius,
Nathanael P. Kazmierczak,
Jacob Syndikus,
Madeline Van Winkle,
Shaul Aloni,
Takashi Taniguchi,
Kenji Watanabe,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak magnetocrystalline anisotropy results in typically soft f…
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Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak magnetocrystalline anisotropy results in typically soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe$_x$TaS$_2$ (Fe-intercalated bilayer 2H-TaS$_2$) with giant coercivities up to 3 tesla. We prepare Fe-intercalated TaS$_2$ by chemical intercalation of van der Waals layered 2H-TaS$_2$ crystals and perform variable-temperature quantum transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe$_x$TaS$_2$. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.
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Submitted 25 July, 2022; v1 submitted 10 March, 2022;
originally announced March 2022.
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Tunable electrochemistry with moiré flat bands and topological defects at twisted bilayer graphene
Authors:
Yun Yu,
Kaidi Zhang,
Holden Parks,
Mohammad Babar,
Stephen Carr,
Isaac M. Craig,
Madeline Van Winkle,
Artur Lyssenko,
Takashi Taniguchi,
Kenji Watanabe,
Venkatasubramanian Viswanathan,
D. Kwabena Bediako
Abstract:
Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moiré superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist ang…
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Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moiré superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist angle dependence of heterogeneous charge transfer kinetics at twisted bilayer graphene electrodes with the greatest enhancement observed near the 'magic angle' (~1.1 degrees). This effect is driven by the angle-dependent tuning of moiré-derived flat bands that modulate electron transfer processes with the solution-phase redox couple. Combined experimental and computational analysis reveals that the variation in electrochemical activity with moiré angle is controlled by atomic reconstruction of the moiré superlattice at twist angles <2 degrees, and topological defect AA stacking regions produce a large anomalous local electrochemical enhancement that cannot be accounted for by the elevated local density of states alone. Our results introduce moiré flat band materials as a distinctively tunable paradigm for mediating electrochemical transformations.
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Submitted 15 August, 2021;
originally announced August 2021.
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Strain fields in twisted bilayer graphene
Authors:
Nathanael P. Kazmierczak,
Madeline Van Winkle,
Colin Ophus,
Karen C. Bustillo,
Hamish G. Brown,
Stephen Carr,
Jim Ciston,
Takashi Taniguchi,
Kenji Watanabe,
D. Kwabena Bediako
Abstract:
Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional sc…
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Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional scanning transmission electron microscopy, to capture atomic displacement fields in twisted bilayer graphene with twist angles < 2°. Nanoscale spatial fluctuations in twist angle and uniaxial heterostrain are statistically evaluated, revealing the prevalence of short-range disorder in this class of materials. By quantitatively map** strain tensor fields we uncover two distinct regimes of structural relaxation -- in contrast to previous models depicting a single continuous process -- and we disentangle the electronic contributions of the rotation modes that comprise this relaxation. Further, we find that applied heterostrain accumulates anisotropically in saddle point regions to generate distinctive striped shear strain phases. Our results thus establish the reconstruction mechanics underpinning the twist angle dependent electronic behaviour of twisted bilayer graphene, and provide a new framework for directly visualizing structural relaxation, disorder, and strain in any moiré material.
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Submitted 15 February, 2021; v1 submitted 22 August, 2020;
originally announced August 2020.
