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Brightened emission of dark trions in transition-metal dichalcogenide monolayers
Authors:
V. **dal,
K. Mourzidis,
A. Balocchi,
C. Robert,
P. Li,
D. Van Tuan,
L. Lombez,
D. Lagarde,
P. Renucci,
T. Taniguchi,
K. Watanabe,
H. Dery,
X. Marie
Abstract:
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.…
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The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures.
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Submitted 4 June, 2024;
originally announced June 2024.
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Effects of dynamical dielectric screening on the excitonic spectrum of monolayer semiconductors
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
We present a new method to solve the dynamical Bethe-Salpeter Equation numerically. The method allows one to investigate the effects of dynamical dielectric screening on the spectral position of excitons in transition-metal dichalcogenide monolayers. The dynamics accounts for the response of optical phonons in the materials below and on top the monolayer to the electric field lines between the ele…
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We present a new method to solve the dynamical Bethe-Salpeter Equation numerically. The method allows one to investigate the effects of dynamical dielectric screening on the spectral position of excitons in transition-metal dichalcogenide monolayers. The dynamics accounts for the response of optical phonons in the materials below and on top the monolayer to the electric field lines between the electron and hole of the exciton. The inclusion of this effect unravels the origin of a counterintuitive energy blueshift of the exciton resonance, observed recently in monolayer semiconductors that are supported on ionic crystals with large dielectric constants. A surprising result is that while energy renormalization of a free electron in the conduction band or a free hole in the valence band is controlled by the low-frequency dielectric constant, the bandgap energy introduces a phase between the photoexcited electron and hole, rendering contributions from the high-frequency dielectric constant also important when evaluating self-energies of the exciton components. As a result, bandgap renormalization of the exciton is not the sum of independent contributions from energy shifts of the conduction and valence bands. The theory correctly predicts the energy shifts of exciton resonances in various dielectric environments that embed two-dimensional semiconductors.
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Submitted 19 April, 2024;
originally announced April 2024.
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Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors
Authors:
Amine Ben Mhenni,
Dinh Van Tuan,
Leonard Geilen,
Marko M. Petrić,
Melike Erdi,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Kai Müller,
Nathan P. Wilson,
Jonathan J. Finley,
Hanan Dery,
Matteo Barbone
Abstract:
Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient…
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Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.
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Submitted 28 February, 2024;
originally announced February 2024.
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Emergence of 6-particle "hexciton'' states in WS$_2$ and MoSe$_2$ monolayers
Authors:
J. Choi,
J. Li,
D. Van Tuan,
H. Dery,
S. A. Crooker
Abstract:
When doped with a high density of mobile charge carriers, monolayer transition-metal dichalcogenide (TMD) semiconductors can host new types of composite many-particle exciton states that do not exist in conventional semiconductors. Such multi-particle bound states arise when a photoexcited electron-hole pair couples to not just a single Fermi sea that is quantum-mechanically distinguishable (as fo…
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When doped with a high density of mobile charge carriers, monolayer transition-metal dichalcogenide (TMD) semiconductors can host new types of composite many-particle exciton states that do not exist in conventional semiconductors. Such multi-particle bound states arise when a photoexcited electron-hole pair couples to not just a single Fermi sea that is quantum-mechanically distinguishable (as for the case of conventional charged excitons or trions), but rather couples simultaneously to \textit{multiple} Fermi seas, each having distinct spin and valley quantum numbers. Composite six-particle ``hexciton'' states were recently identified in electron-doped WSe$_2$ monolayers, but under suitable conditions they should also form in all other members of the monolayer TMD family. Here we present spectroscopic evidence demonstrating the emergence of many-body hexcitons in charge-tunable WS$_2$ monolayers (at the A-exciton) and MoSe$_2$ monolayers (at the B-exciton). The roles of distinguishability and carrier screening on the stability of hexcitons are discussed.
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Submitted 14 December, 2023;
originally announced December 2023.
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Multiobjective Logistics Optimization for Automated ATM Cash Replenishment Process
Authors:
Bui Tien Thanh,
Dinh Van Tuan,
Tuan Anh Chi,
Nguyen Van Dai,
Nguyen Tai Quang Dinh,
Nguyen Thu Thuy,
Nguyen Thi Xuan Hoa
Abstract:
In the digital transformation era, integrating digital technology into every aspect of banking operations improves process automation, cost efficiency, and service level improvement. Although logistics for ATM cash is a crucial task that impacts operating costs and consumer satisfaction, there has been little effort to enhance it. Specifically, in Vietnam, with a market of more than 20,000 ATMs na…
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In the digital transformation era, integrating digital technology into every aspect of banking operations improves process automation, cost efficiency, and service level improvement. Although logistics for ATM cash is a crucial task that impacts operating costs and consumer satisfaction, there has been little effort to enhance it. Specifically, in Vietnam, with a market of more than 20,000 ATMs nationally, research and technological solutions that can resolve this issue remain scarce. In this paper, we generalized the vehicle routing problem for ATM cash replenishment, suggested a mathematical model and then offered a tool to evaluate various situations. When being evaluated on the simulated dataset, our proposed model and method produced encouraging results with the benefits of cutting ATM cash operating costs.
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Submitted 22 July, 2023; v1 submitted 23 April, 2023;
originally announced April 2023.
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Excitons and trions in monolayer semiconductors with correlated electrons
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
We revisit low-temperature optical spectra of transition-metal dichalcogenide monolayers and point to a possible crystallization of electrons (or holes) at low to moderate charge densities. To calculate the excitonic spectra under such conditions, we introduce the recursion method and compute how the charge density affects the energies, linewidths, and oscillator strengths of exciton and trion com…
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We revisit low-temperature optical spectra of transition-metal dichalcogenide monolayers and point to a possible crystallization of electrons (or holes) at low to moderate charge densities. To calculate the excitonic spectra under such conditions, we introduce the recursion method and compute how the charge density affects the energies, linewidths, and oscillator strengths of exciton and trion complexes. Equally important, we study how excitons and trions in the monolayer evolve when the charge particles gradually transition to a periodic Wigner lattice. The results provide valuable information on the ability to detect whether the particles are ordered through the exciton spectrum. Finally, we calculate the change in exciton energy in cases that the added charge particles have similar and dissimilar quantum numbers (spin and valley) to those of the electron or hole in the exciton. The results of this work shed new light on important optical properties of monolayer semiconductors.
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Submitted 18 April, 2023;
originally announced April 2023.
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Excitons in periodic potentials
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
The energy band structure of excitons is studied in periodic potentials produced by the short-range interaction between the exciton and electrons of Wigner or Moiré lattices. Treating the exciton as a point-like dipole that interacts with the periodic potential, we can solve a simple one-body problem that provides valuable information on excitons in many-body problem settings. By employing group t…
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The energy band structure of excitons is studied in periodic potentials produced by the short-range interaction between the exciton and electrons of Wigner or Moiré lattices. Treating the exciton as a point-like dipole that interacts with the periodic potential, we can solve a simple one-body problem that provides valuable information on excitons in many-body problem settings. By employing group theory, we identify the excitonic energy bands that can couple to light and then quantify their energy shifts in response to a change in the period of the potential. This approach allows us to emulate the response of optically active exciton and trion states to a change in electron density. We gain important insights on the relation between the electron order in a Wigner crystal and the energy blueshift of the bright exciton. We discuss the consequences of this relation in the context of optical absorption experiments in monolayer semiconductors.
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Submitted 9 February, 2023;
originally announced February 2023.
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Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS$_2$ and WSe$_2$ monolayers
Authors:
Pengke Li,
Cedric Robert,
Dinh Van Tuan,
Lei Ren,
Xavier Marie,
Hanan Dery
Abstract:
The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exc…
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The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exciton, as well as its recombination mechanism mediated by impurities. The analysis provides thorough understanding of the energy and polarization of the zero-phonon indirect exciton resonance in the emission spectrum.
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Submitted 29 April, 2022;
originally announced May 2022.
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Tetrons, pexcitons, and hexcitons in monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
We present a comprehensive theoretical analysis of composite excitonic states in doped transition-metal dichalcogenide monolayers. Making use of the pair distribution function, we introduce a method to include the effect of screening in the interaction between the excitonic state and Fermi-sea electrons. Employing the screened potential, we study tetrons and pexcitons in which a trion is bound to…
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We present a comprehensive theoretical analysis of composite excitonic states in doped transition-metal dichalcogenide monolayers. Making use of the pair distribution function, we introduce a method to include the effect of screening in the interaction between the excitonic state and Fermi-sea electrons. Employing the screened potential, we study tetrons and pexcitons in which a trion is bound to one and two holes in the conduction band, respectively. A conduction-band hole denotes the lack of electrons with certain quantum numbers at the vicinity of the trion. We then analyze the hexciton complex wherein conduction-band holes facilitate binding of three electrons with one valence-band hole. We introduce a simple model from which one can readily calculate the binding energy of the third (satellite) electron in the hexciton complex. Finally, we compare the simulated results with experiment and point out the shortcomings and successes of the analysis.
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Submitted 20 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Turning many-body problems to few-body ones in photoexcited semiconductors using the stochastic variational method in momentum space, SVM-k
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
We develop an efficient computational technique to calculate composite excitonic states in photoexcited semiconductors through the stochastic variational method (SVM). Many-body interactions between an electron gas and the excitonic state are embodied in the problem through Fermi holes in the conduction band, introduced when electrons are pulled out of the Fermi sea to bind the photoexcited electr…
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We develop an efficient computational technique to calculate composite excitonic states in photoexcited semiconductors through the stochastic variational method (SVM). Many-body interactions between an electron gas and the excitonic state are embodied in the problem through Fermi holes in the conduction band, introduced when electrons are pulled out of the Fermi sea to bind the photoexcited electron-hole pair. We consider the direct Coulomb interaction between distinguishable particles in the complex, the exchange-induced band-gap renormalization effect, and electron-hole exchange interaction between an electron and its conduction-band hole. We provide analytical expressions for potential matrix elements, using a technique that allows us to circumvent the difficulty imposed by the occupation of low-energy electron states in the conduction band. We discuss the computational steps one should implement in order to perform the calculation, and how to extract kinetic energies of individual particles in the complex, average inter-particle distances, and density distributions.
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Submitted 20 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Hexcitons and oxcitons in monolayer WSe$_2$
Authors:
Dinh Van Tuan,
Su-Fei Shi,
Xiaodong Xu,
Scott A. Crooker,
Hanan Dery
Abstract:
In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but also more complex many-body states that are predicted at higher electron densities. We discuss magneto-optical measurements of electron-rich WSe$_2$ monolayers,…
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In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but also more complex many-body states that are predicted at higher electron densities. We discuss magneto-optical measurements of electron-rich WSe$_2$ monolayers, and interpret the spectral lines that emerge at high electron do** as optical transitions of 6-body exciton states ("hexcitons") and 8-body exciton states ("oxcitons"). These many-body states emerge when a photoexcited electron-hole pair interacts simultaneously with multiple Fermi seas, each having distinguishable spin and valley quantum numbers. In addition, we identify the energies of primary and satellite optical transitions of hexcitons in the photoluminescence spectrum.
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Submitted 20 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Composite excitonic states in doped semiconductors
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped ML-MoSe$_2$ and ML-WSe$_2$ due to the contrasting character of their conduction bands. In both cases,…
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We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped ML-MoSe$_2$ and ML-WSe$_2$ due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly-bound trion (two electrons and valence-band hole), surrounded by a region depleted of electrons. The composite in ML-WSe$_2$ further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.
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Submitted 20 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions
Authors:
Min Yang,
Lei Ren,
Cedric Robert,
Dinh Van Tuan,
Laurent Lombez,
Bernhard Urbaszek,
Xavier Marie,
Hanan Dery
Abstract:
We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic…
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We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic complexes dark in monolayer WSe$_2$ on accounts of the unique valley-spin configuration in this material. In addition to the ultrafast energy relaxation of hot excitonic complexes following their interaction with electrons or holes, our analysis sheds light on several key features that are commonly seen in the photoluminescence of this monolayer semiconductor. In particular, we can understand why the photoluminescence intensity of the neutral bright exciton is strongest when the monolayer is hole-doped rather than charge neutral or electron-doped. Or the reason for the dramatic increase of the photoluminescence intensity of negatively-charged excitons (trions) as soon as electrons are added to the monolayer. To self-consistently explain the findings, we further study the photoluminescence spectra at different excitation energies and analyze the behavior of the elusive indirect exciton.
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Submitted 2 October, 2021;
originally announced October 2021.
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Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers
Authors:
Cedric Robert,
Sangjun Park,
Fabian Cadiz,
Laurent Lombez,
Lei Ren,
Hans Tornatzky,
Alistair Rowe,
Daniel Paget,
Fausto Sirotti,
Min Yang,
Dinh Van Tuan,
Takashi Taniguchi,
Bernhard Urbaszek,
Kenji Watanabe,
Thierry Amand,
Hanan Dery,
Xavier Marie
Abstract:
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola…
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Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.
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Submitted 11 May, 2021;
originally announced May 2021.
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Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer
Authors:
Cedric Robert,
Hanan Dery,
Lei Ren,
Dinh van Tuan,
Emmanuel Courtade,
Min Yang,
Bernhard Urbaszek,
Delphine Lagarde,
Kenji Watanabe,
Takashi Taniguchi,
Thierry Amand,
Xavier Marie
Abstract:
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to th…
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The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials.
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Submitted 17 August, 2020;
originally announced August 2020.
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Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
Authors:
Minhao He,
Pasqual Rivera,
Dinh Van Tuan,
Nathan P. Wilson,
Min Yang,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hongyi Yu,
Hanan Dery,
Wang Yao,
Xiaodong Xu
Abstract:
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coul…
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The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.
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Submitted 6 January, 2020;
originally announced January 2020.
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Exciton valley depolarization in monolayer transition-metal dichalcogenides
Authors:
Min Yang,
Cedric Robert,
Zhengguang Lu,
Dinh Van Tuan,
Dmitry Smirnov,
Xavier Marie,
Hanan Dery
Abstract:
The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley de…
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The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley depolarization of excitons in monolayer transition-metal dichalcogenides due to long-range electron-hole exchange typically takes a few ps at low temperatures. Exceptions to this behavior are monolayers MoSe$_2$ and MoTe$_2$ wherein the depolarization is much faster. We elucidate the enigmatic anomaly of these materials, finding that it originates from Rashba-induced coupling of the dark and bright exciton branches next to their degeneracy point. When photoexcited excitons scatter during their energy relaxation between states next to the degeneracy region, they reach the light cone after losing the initial helicity. The valley depolarization is not as fast in monolayers WSe$_2$, WS$_2$ and likely MoS$_2$ wherein the Rashba-induced coupling is negligible.
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Submitted 6 September, 2019;
originally announced September 2019.
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Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2
Authors:
Zhengguang Lu,
Daniel Rhodes,
Zhipeng Li,
Dinh Van Tuan,
Yuxuan Jiang,
Jonathan Ludwig,
Zhigang Jiang,
Zhen Lian,
Su-Fei Shi,
James Hone,
Hanan Dery,
Dmitry Smirnov
Abstract:
Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species - optically accessible ' bright' excitons with anti-parallel spins and optically inactive 'dark' exciton…
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Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species - optically accessible ' bright' excitons with anti-parallel spins and optically inactive 'dark' excitons with parallel spins. For applications exploiting radiative recombination of bright excitons or long lifetime dark excitons, it is essential to understand the radiative character of the exciton ground state and establish the energy separation between the lowest energy bright and dark excitons. Here, we report a direct spectroscopic measure of dark excitons in monolayer MoSe$_2$ encapsulated in hexagonal boron nitride. By applying strong in-plane magnetic field, we induce mixing and splitting of bright and dark exciton branches, which enables an accurate spectroscopic determination of their energies. We confirm the bright character of the exciton ground state separated by a 1.5~meV gap from the higher energy dark exciton state, much smaller compared to the previous theoretical expectations. These findings provide critical information for further improvement of the accurate theoretical description of TMDCs electronic structure.
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Submitted 24 May, 2019;
originally announced May 2019.
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Localization-induced optical properties of monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Hanan Dery
Abstract:
Impurities play an important role during recombination processes in semiconductors. Their important role is sharpened in atomically-thin transition-metal dichalcogenides whose two-dimensional character renders electrons and holes highly susceptible to localization caused by remote charged impurities. We study a multitude of phenomena that arise from the interaction of localized electrons with exci…
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Impurities play an important role during recombination processes in semiconductors. Their important role is sharpened in atomically-thin transition-metal dichalcogenides whose two-dimensional character renders electrons and holes highly susceptible to localization caused by remote charged impurities. We study a multitude of phenomena that arise from the interaction of localized electrons with excitonic complexes. Emphasis is given to the amplification of the phonon-assisted recombination of biexcitons when it is mediated by localized electrons, showing that this mechanism can explain recent photoluminescence experiments in ML-WSe$_2$. In addition, the magnetic-field dependence of this mechanism is analyzed. The results of this work point to (i) an intriguing coupling between the longitudinal-optical and homopolar phonon modes that can further elucidate various experimental results, (ii) the physics behind a series of localization-induced optical transitions in tungsten-based materials, and (iii) the importance of localization centers in facilitating the creation of biexcitons and exciton-exciton annihilation processes.
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Submitted 9 April, 2019;
originally announced April 2019.
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Intervalley plasmons in crystals
Authors:
Dinh Van Tuan,
Benedikt Scharf,
Igor Žutić,
Hanan Dery
Abstract:
Collective charge excitations in solids have been the subject of intense research ever since the pioneering works of Bohm and Pines in the 1950s. Most of these studies focused on long-wavelength plasmons that involve charge excitations with a small crystal-momentum transfer, $q \ll G$, where $G$ is the wavenumber of a reciprocal lattice vector. Less emphasis was given to collective charge excitati…
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Collective charge excitations in solids have been the subject of intense research ever since the pioneering works of Bohm and Pines in the 1950s. Most of these studies focused on long-wavelength plasmons that involve charge excitations with a small crystal-momentum transfer, $q \ll G$, where $G$ is the wavenumber of a reciprocal lattice vector. Less emphasis was given to collective charge excitations that lead to shortwave plasmons in multivalley electronic systems (i.e., when $q \sim G$). We present a theory of intervalley plasmons, taking into account local-field effects in the dynamical dielectric function. Focusing on monolayer transition-metal dichalcogenides where each of the valleys is further spin-split, we derive the energy dispersion of these plasmons and their interaction with external charges. Emphasis in this work is given to sum rules from which we derive the interaction between intervalley plasmons and a test charge, as well as a compact single-plasmon pole expression for the dynamical Coulomb potential.
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Submitted 8 January, 2019;
originally announced January 2019.
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Virtual trions in the photoluminescence of monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Aaron M. Jones,
Min Yang,
Xiaodong Xu,
Hanan Dery
Abstract:
Photoluminescence experiments from monolayer transition-metal dichalcogenides often show that the binding energy of trions is conspicuously similar to the energy of optical phonons. This enigmatic coincidence calls into question whether phonons are involved in the radiative recombination process. We address this problem, unraveling an intriguing optical transition mechanism. Its initial state is a…
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Photoluminescence experiments from monolayer transition-metal dichalcogenides often show that the binding energy of trions is conspicuously similar to the energy of optical phonons. This enigmatic coincidence calls into question whether phonons are involved in the radiative recombination process. We address this problem, unraveling an intriguing optical transition mechanism. Its initial state is a localized charge (electron or hole) and delocalized exciton. The final state is the localized charge, phonon and photon. In between, the intermediate state of the system is a virtual trion formed when the localized charge captures the exciton through emission of the phonon. We analyze the difference between radiative recombinations that involve real and virtual trions (i.e., with and without a phonon), providing useful ways to distinguish between the two in experiment.
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Submitted 22 May, 2018;
originally announced May 2018.
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Pseudospin-driven spin relaxation mechanism in graphene
Authors:
Dinh Van Tuan,
Frank Ortmann,
David Soriano,
Sergio O. Valenzuela,
Stephan Roche
Abstract:
The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge…
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The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for nonmagnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, which makes it unique to graphene. The mixing between spin and pseudospin-related Berry's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.
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Submitted 27 April, 2018;
originally announced April 2018.
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Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum
Authors:
Benedikt Scharf,
Dinh Van Tuan,
Igor Žutić,
Hanan Dery
Abstract:
Monolayer transition-metal dichalcogenides (ML-TMDs) offer exciting opportunities to test the manifestations of many-body interactions through changes in the charge density. Tuning the charge density by a gate voltage leads to profound changes in the optical spectra of excitons in ML-TMDs. We review the band-gap renormalization and dynamical screening as a function of charge density, and then inco…
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Monolayer transition-metal dichalcogenides (ML-TMDs) offer exciting opportunities to test the manifestations of many-body interactions through changes in the charge density. Tuning the charge density by a gate voltage leads to profound changes in the optical spectra of excitons in ML-TMDs. We review the band-gap renormalization and dynamical screening as a function of charge density, and then incorporate these effects through various approximations that model long-wavelength charge excitations in the Bethe-Salpeter Equation (BSE). We then show that coupling between excitons and shortwave charge excitations is essential to resolve several experimental puzzles.
Unlike ubiquitous and well-studied plasmons, driven by collective oscillations of the background charge density in the long-wavelength limit, we discuss the emergence of shortwave plasmons that originate from the short-range Coulomb interaction through which electrons transition between the $\mathbf{K}$ and $-\mathbf{K}$ valleys. We study the coupling between the shortwave plasmons and the neutral exciton through the self-energy of the latter. We then elucidate how this coupling as well as the spin ordering in the conduction band give rise to an experimentally observed optical sideband in electron-doped W-based MLs, conspicuously absent in electron-doped Mo-based MLs or any hole-doped ML-TMDs. While the focus of this review is on the optical manifestations of many-body effects in ML-TMDs, a systematic description of the dynamical screening and its various approximations allow one to revisit other phenomena, such as nonequilibrium transport or superconducting pairing, where the use of the BSE or the emergence of shortwave plasmons can play an important role.
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Submitted 10 January, 2019; v1 submitted 18 January, 2018;
originally announced January 2018.
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The Coulomb interaction in monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Min Yang,
Hanan Dery
Abstract:
Recently, the celebrated Keldysh potential has been widely used to describe the Coulomb interaction of few-body complexes in monolayer transition-metal dichalcogenides. Using this potential to model charged excitons (trions), one finds a strong dependence of the binding energy on whether the monolayer is suspended in air, supported on SiO$_2$, or encapsulated in hexagonal boron-nitride. However, e…
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Recently, the celebrated Keldysh potential has been widely used to describe the Coulomb interaction of few-body complexes in monolayer transition-metal dichalcogenides. Using this potential to model charged excitons (trions), one finds a strong dependence of the binding energy on whether the monolayer is suspended in air, supported on SiO$_2$, or encapsulated in hexagonal boron-nitride. However, empirical values of the trion binding energies show weak dependence on the monolayer configuration. This deficiency indicates that the description of the Coulomb potential is still lacking in this important class of materials. We address this problem and derive a new potential form, which takes into account the three atomic sheets that compose a monolayer of transition-metal dichalcogenides. The new potential self-consistently supports (i) the non-hydrogenic Rydberg series of neutral excitons, and (ii) the weak dependence of the trion binding energy on the environment. Furthermore, we identify an important trion-lattice coupling due to the phonon cloud in the vicinity of charged complexes. Neutral excitons, on the other hand, have weaker coupling to the lattice due to the confluence of their charge neutrality and small Bohr radius.
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Submitted 25 September, 2018; v1 submitted 1 January, 2018;
originally announced January 2018.
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Marrying excitons and plasmons in monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Benedikt Scharf,
Igor Žutić,
Hanan Dery
Abstract:
Just as photons are the quanta of light, plasmons are the quanta of orchestrated charge-density oscillations in conducting media. Plasmon phenomena in normal metals, superconductors and doped semiconductors are often driven by long-wavelength Coulomb interactions. However, in crystals whose Fermi surface is comprised of disconnected pockets in the Brillouin zone, collective electron excitations ca…
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Just as photons are the quanta of light, plasmons are the quanta of orchestrated charge-density oscillations in conducting media. Plasmon phenomena in normal metals, superconductors and doped semiconductors are often driven by long-wavelength Coulomb interactions. However, in crystals whose Fermi surface is comprised of disconnected pockets in the Brillouin zone, collective electron excitations can also attain a shortwave component when electrons transition between these pockets. Here, we show that the band structure of monolayer transition-metal dichalcogenides gives rise to an intriguing mechanism through which shortwave plasmons are paired up with excitons. The coupling elucidates the origin for the optical side band that is observed repeatedly in monolayers of WSe$_2$ and WS$_2$ but not understood. The theory makes it clear why exciton-plasmon coupling has the right conditions to manifest itself distinctly only in the optical spectra of electron-doped tungsten-based monolayers.
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Submitted 14 June, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Probing Many-Body Interactions in Monolayer Transition-Metal Dichalcogenides
Authors:
Dinh Van Tuan,
Benedikt Scharf,
Zefang Wang,
Jie Shan,
Kin Fai Mak,
Igor Zutic,
Hanan Dery
Abstract:
Many-body interactions in monolayer transition-metal dichalcogenides are strongly affected by their unique band structure. We study these interactions by measuring the energy shift of neutral excitons (bound electron-hole pairs) in gated WSe$_2$ and MoSe$_2$. Surprisingly, while the blueshift of the neutral exciton, $X^0$, in electron-doped samples can be more than 10~meV, the blueshift in hole-do…
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Many-body interactions in monolayer transition-metal dichalcogenides are strongly affected by their unique band structure. We study these interactions by measuring the energy shift of neutral excitons (bound electron-hole pairs) in gated WSe$_2$ and MoSe$_2$. Surprisingly, while the blueshift of the neutral exciton, $X^0$, in electron-doped samples can be more than 10~meV, the blueshift in hole-doped samples is nearly absent. Taking into account dynamical screening and local-field effects, we present a transparent and analytical model that elucidates the crucial role played by intervalley plasmons in electron-doped conditions. The energy shift of $X^0$ as a function of charge density is computed showing agreement with experiment, where the renormalization of $X^0$ by intervalley plasmons yields a stronger blueshift in MoSe$_2$ than in WSe$_2$ due to differences in their band ordering.
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Submitted 2 February, 2019; v1 submitted 22 June, 2016;
originally announced June 2016.
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Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene
Authors:
Dinh Van Tuan,
J. M. Marmolejo-Tejada,
Xavier Waintal,
Branislav K. Nikolic,
Stephan Roche
Abstract:
Recent experiments reporting unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer- Buttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity…
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Recent experiments reporting unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer- Buttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. Large spin Hall angles of 0.1 are obtained at zero-temperature, but their dependence on adatom clustering differs from the predictions of semiclassical transport theories. Furthermore, we find multiple background contributions to the nonlocal resistance, some of which are unrelated to SHE or any other spin-dependent origin, as well as a strong suppression of SHE at room temperature. This motivates us to design a multiterminal graphene geometry which suppresses these background contributions and could, therefore, quantify the upper limit for spin current generation in two-dimensional materials.
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Submitted 15 March, 2017; v1 submitted 12 March, 2016;
originally announced March 2016.
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Spin Dynamics in Bilayer Graphene : Role of Electron-Hole Puddles and the Dyakonov-Perel Mechanism
Authors:
Dinh Van Tuan,
Shaffique Adam,
Stephan Roche
Abstract:
We report on spin transport features which are unique to high quality bilayer graphene, in absence of magnetic contaminants and strong intervalley mixing. The time-dependent spin polarization of propagating wavepacket is computed using an efficient quantum transport method. In the limit of vanishing effects of substrate and disorder, the energy-dependence of spin lifetime is similar to monolayer g…
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We report on spin transport features which are unique to high quality bilayer graphene, in absence of magnetic contaminants and strong intervalley mixing. The time-dependent spin polarization of propagating wavepacket is computed using an efficient quantum transport method. In the limit of vanishing effects of substrate and disorder, the energy-dependence of spin lifetime is similar to monolayer graphene with a M-shape profile and minimum value at the charge neutrality point, but with an electron-hole asymmetry fingerprint. In sharp contrast, the incorporation of substrate-induced electron-hole puddles (characteristics of supported graphene either on SiO2 orhBN) surprisingly results in a large enhancement of the low-energy spin lifetime and a lowering of its high-energy values. Such feature, unique to bilayer, is explained in terms of a reinforced Dyakonov-Perel mechanism at the Dirac point, whereas spin relaxation at higher energies is driven by pure dephasing effects. This suggests further electrostatic control of the spin transport length scales in graphene devices.
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Submitted 5 July, 2016; v1 submitted 10 March, 2016;
originally announced March 2016.
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Spin Manipulation in Graphene by Chemically-Induced Sublattice Pseudospin Polarization
Authors:
Dinh Van Tuan,
Stephan Roche
Abstract:
Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation but so far new paradigms and demonstrators are limited. Here we show that certain impurities such as fluorine ad-atoms, which locally break sublattice symmetry without the formation of strong magnetic mome…
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Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation but so far new paradigms and demonstrators are limited. Here we show that certain impurities such as fluorine ad-atoms, which locally break sublattice symmetry without the formation of strong magnetic moment, could result in a remarkable variability of spin transport characteristics. The impurity resonance level is found to be associated with a long range sublattice pseudospin polarization, which by locally decoupling spin and pseudospin dynamics, provokes a huge spin lifetime electron-hole asymmetry. In the dilute impurity limit, spin lifetimes could be tuned electrostatically from hundred picoseconds to several nanoseconds, providing a protocol to chemically engineer an unprecedented spin device functionality.
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Submitted 2 March, 2016;
originally announced March 2016.
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Spin Dynamics and Relaxation in Graphene Dictated by Electron-hole Puddles
Authors:
Dinh Van Tuan,
Frank Ortmann,
Aron W. Cummings,
David Soriano,
Stephan Roche
Abstract:
The understanding of spin dynamics and relaxation mechanisms in clean graphene and the upper time and length scales on which spin devices can operate are prerequisites to realizing graphene spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with spin-orbit Rashba fields as low as a few tens of micron…
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The understanding of spin dynamics and relaxation mechanisms in clean graphene and the upper time and length scales on which spin devices can operate are prerequisites to realizing graphene spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with spin-orbit Rashba fields as low as a few tens of micron eV. Spin lifetimes ranging from 50 picoseconds up to several nanoseconds are found to be dictated by substrate-induced electron-hole characteristics. A crossover in the spin relaxation mechanism from a Dyakonov-Perel type for SiO2 substrates to a broadening-induced dephasing for hBN substrates is described. The energy dependence of spin lifetimes, their ratio for spins pointing out-of-plane and in-plane, and the scaling with disorder provide a global picture about spin dynamics and relaxation in ultraclean graphene in presence of electron-hole puddles.
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Submitted 26 September, 2015;
originally announced September 2015.
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Anomalous Ballistic Transport in Disordered Bilayer Graphene: Dimer Vacancies induced Dirac Semimetal
Authors:
Dinh Van Tuan,
Stephan Roche
Abstract:
We report anomalous quantum transport features in bilayer graphene in presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus non-dimer vacancies is investigated in very large scale disordered models. While non-dimer vacancies are shown to induce localization regimes, dimer vac…
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We report anomalous quantum transport features in bilayer graphene in presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus non-dimer vacancies is investigated in very large scale disordered models. While non-dimer vacancies are shown to induce localization regimes, dimer vacancies result in an unexpected ballistic regime whose energy window surprisingly enlarges with increasing impurity density. Such counterintuitive phenomenon is explained by the formation of an effective linear dispersion in the bilayer bandstructure, which roots in the symmetry breaking effects driven by dimer vacancies, and provides a novel realization of Dirac semimetals in high dimension.
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Submitted 20 August, 2015;
originally announced August 2015.
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Charge Transport in Polycrystalline Graphene: Challenges and Opportunities
Authors:
Aron W. Cummings,
Dinh Loc Duong,
Van Luan Nguyen,
Dinh Van Tuan,
Jani Kotakoski,
Jose Eduardo Barrios Varga,
Young Hee Lee,
Stephan Roche
Abstract:
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by d…
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Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electrobiochemical devices.
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Submitted 22 July, 2015;
originally announced July 2015.
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Spin Transport in Hydrogenated Graphene
Authors:
David Soriano,
Dinh Van Tuan,
Simon M. -M. Dubois,
Martin Gmitra,
Aron W. Cummings,
Denis Kochan,
Frank Ortmann,
Jean-Christophe Charlier,
Jaroslav Fabian,
Stephan Roche
Abstract:
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with…
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In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with the formation of a local magnetic moment. First-principles calculations of hydrogenated graphene unravel the strong interplay of spin-orbit and exchange couplings. The concept of magnetic scattering resonances, recently introduced \cite{Kochan2014} is revisited by describing the local magnetism through the self-consistent Hubbard model in the mean field approximation in the dilute limit, while spin relaxation lengths and transport times are computed using an efficient real space order N wavepacket propagation method. Typical spin lifetimes on the order of 1 nanosecond are obtained for 1 ppm of hydrogen impurities (corresponding to transport time about 50 ps), and the scaling of spin lifetimes with impurity density is described by the Elliott-Yafet mechanism. This reinforces the statement that magnetism is the origin of the substantial spin polarization loss in the ultraclean graphene limit.
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Submitted 7 April, 2015;
originally announced April 2015.
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Multiple Quantum Phases in Graphene with Enhanced Spin-Orbit Coupling: From the Quantum Spin Hall Regime to the Spin Hall Effect and a Robust Metallic State
Authors:
Alessandro Cresti,
Dinh Van Tuan,
David Soriano,
Aron W. Cummings,
Stephan Roche
Abstract:
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of…
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We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of adatom clustering in the formation of the topological state, but also provide evidence for the emergence of spin accumulation at opposite sample edges driven by spin-dependent scattering induced by thallium islands, which eventually results in a minimum bulk conductivity $\sim 4e^{2}/h$, insensitive to localization effects.
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Submitted 27 December, 2014; v1 submitted 21 November, 2014;
originally announced November 2014.
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Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
Authors:
David Jiménez,
Aron W. Cummings,
Ferney Chaves,
Dinh Van Tuan,
Jani Kotakoski,
Stephan Roche
Abstract:
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, po…
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We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used to guide the further development and optimization of graphene-based electronic devices.
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Submitted 4 February, 2014;
originally announced February 2014.
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Broken Symmetries, Zero-Energy Modes, and Quantum Transport in Disordered Graphene: From Supermetallic to Insulating Regimes
Authors:
Alessandro Cresti,
Frank Ortmann,
Thibaud Louvet,
Dinh Van Tuan,
Stephan Roche
Abstract:
The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transpo…
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The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transport in bulk disordered graphene. Depending on the transport measurement geometry, defect density, and broken sublattice-symmetry, the Dirac point conductivity is either exceptionally robust against disorder (supermetallic state) or suppressed through a gap opening or by algebraic localization of zero-energy modes, whereas weak localization and the Anderson insulating regime are obtained for higher energies. These findings clarify the contribution of zero-energy modes to transport at the Dirac point, hitherto controversial.
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Submitted 30 April, 2013;
originally announced April 2013.
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Additive Update Algorithm for Nonnegative Matrix Factorization
Authors:
Tran Dang Hien,
Do Van Tuan,
Pham Van At
Abstract:
Nonnegative matrix factorization (NMF) is an emerging technique with a wide spectrum of potential applications in data analysis. Mathematically, NMF can be formulated as a minimization problem with nonnegative constraints. This problem is currently attracting much attention from researchers for theoretical reasons and for potential applications. Currently, the most popular approach to solve NMF is…
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Nonnegative matrix factorization (NMF) is an emerging technique with a wide spectrum of potential applications in data analysis. Mathematically, NMF can be formulated as a minimization problem with nonnegative constraints. This problem is currently attracting much attention from researchers for theoretical reasons and for potential applications. Currently, the most popular approach to solve NMF is the multiplicative update algorithm proposed by D.D. Lee and H.S. Seung. In this paper, we propose an additive update algorithm, that has faster computational speed than the algorithm of D.D. Lee and H.S. Seung.
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Submitted 24 December, 2012; v1 submitted 25 September, 2012;
originally announced September 2012.
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Insulating Behavior of an Amorphous Graphene Membrane
Authors:
Dinh Van Tuan,
Avishek Kumar,
Stephan Roche,
Frank Ortmann,
M. F. Thorpe,
Pablo Ordejon
Abstract:
We investigate the charge transport properties of planar amorphous graphene that is fully topologically disordered, in the form of sp2 three-fold coordinated networks consisting of hexagonal rings, but also including many pentagons and heptagons distributed in a random fashion. Using the Kubo transport methodology and the Lanczos method, the density of states, mean free paths and semiclassical con…
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We investigate the charge transport properties of planar amorphous graphene that is fully topologically disordered, in the form of sp2 three-fold coordinated networks consisting of hexagonal rings, but also including many pentagons and heptagons distributed in a random fashion. Using the Kubo transport methodology and the Lanczos method, the density of states, mean free paths and semiclassical conductivities of such amorphous graphene membranes are computed. Despite a large increase in the density of states close to the charge neutrality point, all electronic properties are dramatically degraded, evidencing an Anderson insulating state caused by topological disorder alone. These results are supported by Landauer-Buttiker conductance calculations, which show a localization length as short as 5 nanometers
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Submitted 24 September, 2012;
originally announced September 2012.
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A Novel Data Hiding Scheme for Binary Images
Authors:
Do Van Tuan,
Tran Dang Hien,
Pham Van At
Abstract:
This paper presents a new scheme for hiding a secret message in binary images. Given m*n cover image block, the new scheme can conceal as many as log(m*n +1) bits of data in block, by changing at most one bit in the block. The hiding ability of the new scheme is the same as Chang et al.'s scheme and higher than Tseng et al.'s scheme. Additionally, the security of the new scheme is higher than the…
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This paper presents a new scheme for hiding a secret message in binary images. Given m*n cover image block, the new scheme can conceal as many as log(m*n +1) bits of data in block, by changing at most one bit in the block. The hiding ability of the new scheme is the same as Chang et al.'s scheme and higher than Tseng et al.'s scheme. Additionally, the security of the new scheme is higher than the two above schemes.
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Submitted 25 August, 2012;
originally announced August 2012.
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Plasmon modes of double-layer graphene at finite temperature
Authors:
Dinh Van Tuan,
Nguyen Quoc Khanh
Abstract:
We calculate the dynamical dielectric function of doped double-layer graphene (DLG), made of two parallel graphene monolayers with carrier densities n 1, n2, respectively, and an interlayer separation of d at finite temperature. The results are used to find the dispersion of plasmon modes and loss functions of DLG for several interlayer separations and layer densities. We show that in the case of…
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We calculate the dynamical dielectric function of doped double-layer graphene (DLG), made of two parallel graphene monolayers with carrier densities n 1, n2, respectively, and an interlayer separation of d at finite temperature. The results are used to find the dispersion of plasmon modes and loss functions of DLG for several interlayer separations and layer densities. We show that in the case of n 2=0, the temperature plasmon modes are dramatically different from the zero temperature ones.
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Submitted 14 January, 2011;
originally announced January 2011.
