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A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 um
Authors:
Chao Pang,
Yu-Hao Deng,
Ezat Kheradmand,
Luis Moreno Hagelsieb,
Yujie Guo,
David Cheyns,
Pieter Geiregat,
Zeger Hens,
Dries Van Thourhout
Abstract:
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising solution here, offering distinct advantages such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them…
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Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising solution here, offering distinct advantages such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 um, a low dark current of only 106 nA and a bandwidth of 1.1 MHz under a -3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 um wavelength range.
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Submitted 28 May, 2024; v1 submitted 20 May, 2024;
originally announced May 2024.
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Graphene phase modulators operating in the transparency regime
Authors:
H. F. Y. Watson,
A. Ruocco,
M. Tiberi,
J. E. Muench,
O. Balci,
S. M. Shinde,
S. Mignuzzi,
M. Pantouvaki,
D. Van Thourhout,
R. Sordan,
A. Tomadin,
M. Romagnoli,
A. C. Ferrari
Abstract:
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu…
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Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude.
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Submitted 25 December, 2023;
originally announced January 2024.
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Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
Authors:
Ying Tan,
Shengpu Niu,
Maximilien Billet,
Nishant Singh,
Margot Niels,
Tom Vanackere,
Joris Van Kerrebrouck,
Gunther Roelkens,
Bart Kuyken,
Dries Van Thourhout
Abstract:
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lit…
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Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.
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Submitted 26 November, 2023;
originally announced November 2023.
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GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Authors:
Yannick De Koninck,
Charles Caer,
Didit Yudistira,
Marina Baryshnikova,
Huseyin Sar,
**-Yi Hsieh,
Saroj Kanta Patra,
Nadezda Kuznetsova,
Davide Colucci,
Alexey Milenin,
Andualem Ali Yimam,
Geert Morthier,
Dries Van Thourhout,
Peter Verheyen,
Marianna Pantouvaki,
Bernardette Kunert,
Joris Van Campenhout
Abstract:
Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio…
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Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trap**. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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Submitted 20 July, 2023;
originally announced September 2023.
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Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform
Authors:
Chenghan Wu,
Steven Brems,
Didit Yudistira,
Daire Cott,
Alexey Milenin,
Kevin Vandersmissen,
Arantxa Maestre,
Alba Centeno,
Amaia Zurutuza,
Joris Van Campenhout,
Cedric Huyghebaert,
Dries Van Thourhout,
Marianna Pantouvaki
Abstract:
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish th…
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Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$μ$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing.
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Submitted 28 March, 2023;
originally announced April 2023.
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Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity
Authors:
Ruijuan Tian,
Xuetao Gan,
Chen Li,
Xiaoqing Chen,
Siqi Hu,
Linpeng Gu,
Dries Van Thourhout,
Andres Castellanos-Gomez,
Zhipei Sun,
Jianlin Zhao
Abstract:
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents a…
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Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic do** to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.
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Submitted 7 June, 2022;
originally announced June 2022.
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Light modulation in Silicon photonics by PZT actuated acoustic waves
Authors:
Irfan Ansari,
John P. George,
Gilles F. Feutmba,
Tessa Van de Veire,
Awanish Pandey,
Jeroen Beeckman,
Dries Van Thourhout
Abstract:
Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectri…
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Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on Silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a Silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in Silicon waveguides with the PZT actuated acoustic waves. We fabricate inter digital transducers (IDTs) on the PZT film with a contact photo-lithography and electron-beam lithography to generate the acoustic waves in MHz and GHz range respectively. We obtain a V$_π$L $\sim$ 3.35 V$\cdot$cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V$_π$L $\sim$ 3.60 V$\cdot$cm at 2 GHz from a 100 nm thick Aluminum (Al) IDT consisting of only 4 finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for broadband and efficient acousto-optic modulator for future integration.
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Submitted 22 May, 2022; v1 submitted 15 December, 2021;
originally announced December 2021.
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Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform
Authors:
Weiqiang Xie,
Peter Verheyen,
Marianna Pantouvaki,
Joris Van Campenhout,
Dries Van Thourhout
Abstract:
Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication…
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Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication, and how to efficiently integrate them with other standard building blocks, available in exiting PIC platforms. In this work, we demonstrate ultrahigh-Q 1D PhC nanocavities fabricated on a 300 mm SOI wafer by optical lithography, with a record Q factor of up to 0.84 million. Moreover, we show efficient mode management in those oxide embedded cavities by coupling them with an access waveguide and realize two critical components: notch filters and narrow-band reflectors. In particular, they allow both single-wavelength and multi-wavelength operation, at the desired resonant wavelengths, while suppressing all other wavelengths over a broad wavelength range (>100 nm). Compared to traditional cavities, this offers a fantastic strategy for implementing resonances precisely in PIC designs with more freedom in terms of wavelength selectivity and the control of mode number. Given their compatibility with optical lithography and compact footprint, the realized 1D PhC nanocavities will be of profound significance for designing compact and novel resonance-based photonic components on large scale.
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Submitted 2 September, 2020;
originally announced September 2020.
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High-responsivity graphene photodetectors integrated on silicon microring resonators
Authors:
Simone Schuler,
Jakob E. Muench,
Alfonso Ruocco,
Osman Balci,
Dries van Thourhout,
Vito Sorianello,
Marco Romagnoli,
Kenji Watanabe,
Takashi Taniguchi,
Ilya Goykhman,
Andrea C. Ferrari,
Thomas Mueller
Abstract:
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input…
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Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $μ$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver.
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Submitted 6 July, 2020;
originally announced July 2020.
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Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
Authors:
R. Maiti,
C. Patil,
T. Xie,
J. G. Azadani,
M. A. S. R. Saadi,
R. Amin,
M. Miscuglio,
D. Van Thourhout,
S. D. Solares,
T. Low,
R. Agarwal,
S. Bank,
V. J. Sorger
Abstract:
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or exci…
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In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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Submitted 22 December, 2019; v1 submitted 31 October, 2019;
originally announced December 2019.
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Integration of Single Photon Emitters in 2D Layered Materials with a Silicon Nitride Photonic Chip
Authors:
Frédéric Peyskens,
Chitraleema Chakraborty,
Muhammad Muneeb,
Dries Van Thourhout,
Dirk Englund
Abstract:
Photonic integrated circuits (PICs) enable miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Single photon emitters (SPEs) are central building blocks for such quantum circuits and several approaches have been developed to interface PICs with a host material containing SPEs. SPEs embedded in 2D transition metal dichalcog…
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Photonic integrated circuits (PICs) enable miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Single photon emitters (SPEs) are central building blocks for such quantum circuits and several approaches have been developed to interface PICs with a host material containing SPEs. SPEs embedded in 2D transition metal dichalcogenides have unique properties that make them particularly appealing as PIC-integrated SPEs. They can be easily interfaced with PICs and stacked together to create complex heterostructures. Since the emitters are embedded in a monolayer there is no total internal reflection, enabling very high light extraction efficiencies without the need of any additional processing to allow efficient single photon transfer between the host and the underlying PIC. Arrays of 2D-based SPEs can moreover be fabricated deterministically through STEM patterning or strain engineering. Finally, 2D materials grown with high wafer-scale uniformity are becoming more readily available, such that they can be matched at the wafer level with underlying PICs. Here we report on the integration of a WSe$_{2}$ monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
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Submitted 18 April, 2019;
originally announced April 2019.
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On-Chip Integrated Quantum-Dot Silicon-Nitride Microdisk Lasers
Authors:
Weiqiang Xie,
Thilo Stöferle,
Gabriele Rainò,
Tangi Aubert,
Suzanne Bisschop,
Yunpeng Zhu,
Rainer F. Mahrt,
Pieter Geiregat,
Edouard Brainis,
Zeger Hens,
Dries Van Thourhout
Abstract:
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7μm diameter and record low threshold density of 27 μJ cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer long term stability and facilitate in depth laser characterization. This approach opens up new paths for optical communication, lab-on-a-chip, gas sensing and, potential…
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Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7μm diameter and record low threshold density of 27 μJ cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer long term stability and facilitate in depth laser characterization. This approach opens up new paths for optical communication, lab-on-a-chip, gas sensing and, potentially, on-chip cavity quantum electrodynamics and quantum optics.
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Submitted 18 January, 2019;
originally announced January 2019.
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Controlling phonons and photons at the wavelength-scale: silicon photonics meets silicon phononics
Authors:
Amir H. Safavi-Naeini,
Dries Van Thourhout,
Roel Baets,
Raphaël Van Laer
Abstract:
Radio-frequency communication systems have long used bulk- and surface-acoustic-wave devices supporting ultrasonic mechanical waves to manipulate and sense signals. These devices have greatly improved our ability to process microwaves by interfacing them to orders-of-magnitude slower and lower loss mechanical fields. In parallel, long-distance communications have been dominated by low-loss infrare…
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Radio-frequency communication systems have long used bulk- and surface-acoustic-wave devices supporting ultrasonic mechanical waves to manipulate and sense signals. These devices have greatly improved our ability to process microwaves by interfacing them to orders-of-magnitude slower and lower loss mechanical fields. In parallel, long-distance communications have been dominated by low-loss infrared optical photons. As electrical signal processing and transmission approaches physical limits imposed by energy dissipation, optical links are now being actively considered for mobile and cloud technologies. Thus there is a strong driver for wavelength-scale mechanical wave or "phononic" circuitry fabricated by scalable semiconductor processes. With the advent of these circuits, new micro- and nanostructures that combine electrical, optical and mechanical elements have emerged. In these devices, such as optomechanical waveguides and resonators, optical photons and gigahertz phonons are ideally matched to one another as both have wavelengths on the order of micrometers. The development of phononic circuits has thus emerged as a vibrant field of research pursued for optical signal processing and sensing applications as well as emerging quantum technologies. In this review, we discuss the key physics and figures of merit underpinning this field. We also summarize the state of the art in nanoscale electro- and optomechanical systems with a focus on scalable platforms such as silicon. Finally, we give perspectives on what these new systems may bring and what challenges they face in the coming years. In particular, we believe hybrid electro- and optomechanical devices incorporating highly coherent and compact mechanical elements on a chip have significant untapped potential for electro-optic modulation, quantum microwave-to-optical photon conversion, sensing and microwave signal processing.
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Submitted 7 October, 2018;
originally announced October 2018.
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Nanophotonic Pockels modulators on a silicon nitride platform
Authors:
Koen Alexander,
John P. George,
Jochem Verbist,
Kristiaan Neyts,
Bart Kuyken,
Dries Van Thourhout,
Jeroen Beeckman
Abstract:
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead…
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Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($α\approx 1$ dB/cm). A $V_πL\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.
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Submitted 13 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
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Electrically Tunable Optical Nonlinearities in Graphene-Covered SiN Waveguides Characterized by Four-Wave Mixing
Authors:
Koen Alexander,
N. A. Savostianova,
S. A. Mikhailov,
Bart Kuyken,
Dries Van Thourhout
Abstract:
We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In the vicinity of the interband absorption edge ($2|E_F|\approx \hbarω$) a peak value of the waveguide nonlinear parameter of…
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We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In the vicinity of the interband absorption edge ($2|E_F|\approx \hbarω$) a peak value of the waveguide nonlinear parameter of $\approx$ 6400 m$^{-1}$W$^{-1}$, corresponding to a graphene nonlinear sheet conductivity $|σ_s^{(3)}|\approx4.3\cdot 10^{-19}$ A m$^2$V$^{-3}$ is measured.
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Submitted 1 June, 2017; v1 submitted 27 April, 2017;
originally announced April 2017.
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Thermal Brillouin noise observed in silicon optomechanical waveguide
Authors:
Raphaël Van Laer,
Christopher J. Sarabalis,
Roel Baets,
Dries Van Thourhout,
Amir H. Safavi-Naeini
Abstract:
Stimulated Brillouin scattering was recently observed in nanoscale silicon waveguides. Surprisingly, thermally-driven photon-phonon conversion in these structures had not yet been reported. Here, we inject an optical probe in a suspended silicon waveguide and measure its phase fluctuations at the output. We observe mechanical resonances around 8 GHz with a scattering efficiency of…
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Stimulated Brillouin scattering was recently observed in nanoscale silicon waveguides. Surprisingly, thermally-driven photon-phonon conversion in these structures had not yet been reported. Here, we inject an optical probe in a suspended silicon waveguide and measure its phase fluctuations at the output. We observe mechanical resonances around 8 GHz with a scattering efficiency of $10^{-5} \, \text{m}^{-1}$ and a signal-to-noise ratio of 2. The observations are in agreement with a theory of noise in these waveguides as well as with stimulated measurements. Our scheme may simplify measurements of mechanical signatures in nanoscale waveguides and is a step towards a better grasp of thermal noise in these new continuum optomechanical systems.
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Submitted 4 November, 2016;
originally announced November 2016.
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Net on-chip Brillouin gain based on suspended silicon nanowires
Authors:
Raphaël Van Laer,
Alexandre Bazin,
Bart Kuyken,
Roel Baets,
Dries Van Thourhout
Abstract:
The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave B…
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The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.
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Submitted 25 August, 2015;
originally announced August 2015.
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Unifying Brillouin scattering and cavity optomechanics
Authors:
Raphaël Van Laer,
Roel Baets,
Dries Van Thourhout
Abstract:
So far, Brillouin scattering and cavity optomechanics were mostly disconnected branches of research -- although both deal with photon-phonon coupling. This begs for the development of a broader theory that contains both fields. Here, we derive the dynamics of optomechanical cavities from that of Brillouin-active waveguides. This explicit transition elucidates the link between phenomena such as Bri…
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So far, Brillouin scattering and cavity optomechanics were mostly disconnected branches of research -- although both deal with photon-phonon coupling. This begs for the development of a broader theory that contains both fields. Here, we derive the dynamics of optomechanical cavities from that of Brillouin-active waveguides. This explicit transition elucidates the link between phenomena such as Brillouin amplification and electromagnetically induced transparency. It proves that effects familiar from cavity optomechanics all have traveling-wave partners, but not vice versa. We reveal a close connection between two parameters of central importance in these fields: the Brillouin gain coefficient and the zero-point optomechanical coupling rate. This enables comparisons between systems as diverse as ultracold atom clouds, plasmonic Raman cavities and nanoscale silicon waveguides. In addition, back-of-the-envelope calculations show that unobserved effects, such as photon-assisted amplification of traveling phonons, are now accessible in existing systems. Finally, we formulate both circuit- and cavity-oriented optomechanics in terms of vacuum coupling rates, cooperativities and gain coefficients, thus reflecting the similarities in the underlying physics.
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Submitted 22 May, 2016; v1 submitted 10 March, 2015;
originally announced March 2015.
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Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon
Authors:
Zhechao Wang,
Bin Tian,
Marianna Pantouvaki,
Weiming Guo,
Philippe Absil,
Joris Van Campenhout,
Clement Merckling,
Dries Van Thourhout
Abstract:
Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon…
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Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic.
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Submitted 13 January, 2015;
originally announced January 2015.
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Interaction between light and highly confined hypersound in a silicon photonic nanowire
Authors:
Raphaël Van Laer,
Bart Kuyken,
Dries Van Thourhout,
Roel Baets
Abstract:
In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic…
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In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic wires. Here we demonstrate, for the first time, such a giant overlap between near-infrared light and gigahertz sound co-localized in a small-core silicon wire. The wire is supported by a tiny pillar to block the path for external phonon leakage, trap** $\mathbf{10} \; \textbf{GHz}$ phonons in an area below $\mathbf{0.1 \; \boldsymbolμ}\textbf{m}^{\mathbf{2}}$. Since our geometry can be coiled up to form a ring cavity, it paves the way for complete fusion between the worlds of cavity optomechanics and Brillouin scattering. The result bodes well for the realization of low-footprint optically-pumped lasers/sasers and delay lines on a densely integrated silicon chip.
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Submitted 18 July, 2014;
originally announced July 2014.
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Analysis of enhanced stimulated Brillouin scattering in silicon slot waveguides
Authors:
Raphaël Van Laer,
Bart Kuyken,
Dries Van Thourhout,
Roel Baets
Abstract:
Stimulated Brillouin scattering has attracted renewed interest with the promise of highly tailorable integration into the silicon photonics platform. However, significant Brillouin amplification in silicon waveguides has yet to be shown. In an effort to engineer a structure with large photon-phonon coupling, we analyzed both forward and backward Brillouin scattering in high-index-contrast silicon…
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Stimulated Brillouin scattering has attracted renewed interest with the promise of highly tailorable integration into the silicon photonics platform. However, significant Brillouin amplification in silicon waveguides has yet to be shown. In an effort to engineer a structure with large photon-phonon coupling, we analyzed both forward and backward Brillouin scattering in high-index-contrast silicon slot waveguides. The calculations predict that gradient forces enhance the Brillouin gain in narrow slots. We estimate a currently feasible gain of about $10^{5} \, \text{W}^{-1}\text{m}^{-1}$, which is an order of magnitude larger than in a stand-alone silicon wire. Such efficient coupling could enable a host of Brillouin technologies on a mass-producible silicon chip.
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Submitted 23 October, 2013; v1 submitted 22 October, 2013;
originally announced October 2013.
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Quantum Rod Emission Coupled to Plasmonic Lattice Resonances: A Collective Directional Source of Polarized Light
Authors:
S. R. K. Rodriguez,
G. Lozano,
M. A. Verschuuren,
R. Gomes,
K. Lambert,
B. De Geyter,
A. Hassinen,
D. Van Thourhout,
Z. Hens,
J. Gomez Rivas
Abstract:
We demonstrate that an array of optical antennas may render a thin layer of randomly oriented semiconductor nanocrystals into an enhanced and highly directional source of polarized light. The array sustains collective plasmonic lattice resonances which are in spectral overlap with the emission of the nanocrystals over narrow angular regions. Consequently, different photon energies of visible light…
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We demonstrate that an array of optical antennas may render a thin layer of randomly oriented semiconductor nanocrystals into an enhanced and highly directional source of polarized light. The array sustains collective plasmonic lattice resonances which are in spectral overlap with the emission of the nanocrystals over narrow angular regions. Consequently, different photon energies of visible light are enhanced and beamed into definite directions.
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Submitted 14 May, 2013;
originally announced May 2013.
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Generation of correlated photons in hydrogenated amorphous-silicon waveguides
Authors:
S. Clemmen,
A. Perret,
S. K. Selvaraja,
W. Bogaerts,
D. van Thourhout,
R. Baets,
Ph. Emplit,
S. Massar
Abstract:
We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.
We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.
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Submitted 4 February, 2011;
originally announced February 2011.
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On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides
Authors:
Bart Kuyken,
Stéphane Clemmen,
Shankar Kumar Selvaraja,
Wim Bogaerts,
Dries Van Thourhout,
Philippe Emplit,
Serge Massar,
Gunther Roelkens,
Roel Baets
Abstract:
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
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Submitted 4 February, 2011;
originally announced February 2011.
