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A Sequential Benders-based Mixed-Integer Quadratic Programming Algorithm
Authors:
Andrea Ghezzi,
Wim Van Roy,
Sebastian Sager,
Moritz Diehl
Abstract:
For continuous decision spaces, nonlinear programs (NLPs) can be efficiently solved via sequential quadratic programming (SQP) and, more generally, sequential convex programming (SCP). These algorithms linearize only the nonlinear equality constraints and keep the outer convex structure of the problem intact. The aim of the presented sequential mixed-integer quadratic programming (MIQP) algorithm…
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For continuous decision spaces, nonlinear programs (NLPs) can be efficiently solved via sequential quadratic programming (SQP) and, more generally, sequential convex programming (SCP). These algorithms linearize only the nonlinear equality constraints and keep the outer convex structure of the problem intact. The aim of the presented sequential mixed-integer quadratic programming (MIQP) algorithm for mixed-integer nonlinear problems (MINLPs) is to extend the SQP/SCP methodology to MINLPs and leverage the availability of efficient MIQP solvers. The algorithm employs a three-step method in each iterate: First, the MINLP is linearized at a given iterate. Second, an MIQP with its feasible set restricted to a specific region around the current linearization point is formulated and solved. Third, the integer variables obtained from the MIQP solution are fixed, and only an NLP in the continuous variables is solved. The outcome of the third step is compared to previous iterates, and the best iterate so far is used as a linearization point in the next iterate. Crucially, the objective values and derivatives from all previous iterates are used to formulate the polyhedral region in the second step. The linear inequalities that define the region build on concepts from generalized Benders' decomposition for MINLPs. Although the presented MINLP algorithm is a heuristic method without any global optimality guarantee, it converges to the exact integer solution when applied to convex MINLP with a linear outer structure. The conducted numerical experiments demonstrate that the proposed algorithm is competitive with other open-source solvers for MINLP. Finally, we solve two mixed-integer optimal control problems (MIOCPs) transcribed into MINLPs via direct methods, showing that the presented algorithm can effectively deal with nonlinear equality constraints, a major hurdle for generic MINLP solvers.
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Submitted 17 April, 2024;
originally announced April 2024.
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Tuning the Fano resonance between localized and propagating surface plasmon resonances for refractive index sensing applications
Authors:
Kristof Lodewijks,
Jef Ryken,
Willem Van Roy,
Gustaaf Borghs,
Liesbet Lagae,
Pol Van Dorpe
Abstract:
Localized and propagating surface plasmon resonances are known to show very pronounced interactions if they are simultaneously excited in the same nanostructure. Here we study the fano interference that occurs between localized (LSPR) and propagating (SPP) modes by means of phase sensitive spectroscopic ellipsometry. The sample structures consist of periodic gratings of gold nanodisks on top of a…
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Localized and propagating surface plasmon resonances are known to show very pronounced interactions if they are simultaneously excited in the same nanostructure. Here we study the fano interference that occurs between localized (LSPR) and propagating (SPP) modes by means of phase sensitive spectroscopic ellipsometry. The sample structures consist of periodic gratings of gold nanodisks on top of a continuous gold layer and a thin dielectric spacer, in which the structural dimensions were tuned in such a way that the dipolar LSPR mode and the propagating SPP modes are excited in the same spectral region. We observe pronounced anti-crossing and strongly asymmetric line shapes when both modes move to each others vicinity, accompagnied of largely increased phase differences between the respective plasmon resonances. Moreover we show that the anti-crossing can be exploited to increase the refractive index sensitivity of the localized modes dramatically, which result in largely increased values for the Figure-Of-Merit which reaches values between 24 and 58 for the respective plasmon modes.
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Submitted 17 November, 2012;
originally announced November 2012.
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Method for Flow Measurement in Microfluidic Channels Based on Electrical Impedance Spectroscopy
Authors:
Nima Arjmandi,
Chengxun Liu,
Willem Van Roy,
Liesbet Lagae,
Gustaaf Borghs
Abstract:
We have developed and characterized two novel micro flow sensors based on measuring the electrical impedance of the interface between the flowing liquid and metallic electrodes embedded on the channel walls. These flow sensors are very simple to fabricate and use, are extremely compact and can easily be integrated into most microfluidic systems. One of these devices is a micropore with two tantalu…
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We have developed and characterized two novel micro flow sensors based on measuring the electrical impedance of the interface between the flowing liquid and metallic electrodes embedded on the channel walls. These flow sensors are very simple to fabricate and use, are extremely compact and can easily be integrated into most microfluidic systems. One of these devices is a micropore with two tantalum/platinum electrodes on its edges; the other is a micro channel with two tantalum /platinum electrodes placed perpendicular to the channel on its walls. In both sensors the flow rate is measured via the electrical impedance between the two metallic electrodes, which is the impedance of two metal-liquid junctions in series. The dependency of the metal-liquid junction impedance on the flow rate of the liquid has been studied. The effects of different parameters on the sensor's outputs and its noise behavior are investigated. Design guidelines are extracted and applied to achieve highly sensitive micro flow sensors with low noise.
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Submitted 16 July, 2012;
originally announced July 2012.
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Improved Algorithms for Nanopore Signal Processing
Authors:
Nima Arjmandi,
Willem Van Roy,
Liesbet Lagae,
Gustaaf Borghs
Abstract:
Nanopore resistive pulse techniques are based on analysis of current or voltage spikes in the recorded signal. These spikes result from translocation of nanometer sized analytes through a nanopore. The most important information that needs to be extracted is the duration, amplitude and number of the translocation spikes. The recorded signal is usually considerably noisy, with a huge baseline drift…
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Nanopore resistive pulse techniques are based on analysis of current or voltage spikes in the recorded signal. These spikes result from translocation of nanometer sized analytes through a nanopore. The most important information that needs to be extracted is the duration, amplitude and number of the translocation spikes. The recorded signal is usually considerably noisy, with a huge baseline drift and hundreds of translocation spikes. Thus, incorporation of suitable signal processing algorithms is necessary for correct and fast detection of all the translocation spikes and to accurately measure their amplitude and duration. Generally, low-pass filtering is used for denoising, averaging is used for baseline detection, and thresholding is used for spike detection and measurement. Here we present novel algorithms and specifically developed software for nanopore signal processing that are significantly improving the accuracy of the nanopore measurements. It includes an improved method for baseline removing, an optimized algorithm for denoising the nanopore signals, a novel spike detection method that detects all the translocation spikes more correctly, and a novel algorithm for measuring the duration and amplitude of the translocation spikes that is less affected by the measurement bandwidth and is more accurate. The newly developed algorithms are evaluated and optimized by a range of experimentally recorded signals, in addition to different simulated signals.
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Submitted 10 July, 2012;
originally announced July 2012.
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Understanding nanoscale temperature gradients in magnetic nanocontacts
Authors:
Sébastien Petit-Watelot,
Ruben Miguel Otxoa,
Mauricio Manfrini,
Wim Van Roy,
Liesbet Lagae,
Joo-Von Kim,
Thibaut Devolder
Abstract:
We determine the temperature profile in magnetic nanocontacts submitted to the very large current densities that are commonly used for spin-torque oscillator behavior. Experimentally, the quadratic current-induced increase of the resistance through Joule heating is independent of the applied temperature from 6 K to 300 K. The modeling of the experimental rate of the current-induced nucleation of a…
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We determine the temperature profile in magnetic nanocontacts submitted to the very large current densities that are commonly used for spin-torque oscillator behavior. Experimentally, the quadratic current-induced increase of the resistance through Joule heating is independent of the applied temperature from 6 K to 300 K. The modeling of the experimental rate of the current-induced nucleation of a vortex under the nanocontact, assuming a thermally-activated process, is consistent with a local temperature increase between 150 K and 220 K. Simulations of heat generation and diffusion for the actual tridimensional geometry were conducted. They indicate a temperature-independent efficiency of the heat sinking from the electrodes, combined with a localized heating source arising from a nanocontact resistance that is also essentially temperature-independent. For practical currents, we conclude that the local increase of temperature is typically 160 K and it extends 450 nm about the nanocontact. Our findings imply that taking into account the current-induced heating at the nanoscale is essential for the understanding of magnetization dynamics in nanocontact systems.
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Submitted 25 June, 2012;
originally announced June 2012.
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Boosting the Figure Of Merit of LSPR-based refractive index sensing by phase-sensitive measurements
Authors:
Kristof Lodewijks,
Wim Van Roy,
Gustaaf Borghs,
Liesbet Lagae,
Pol Van Dorpe
Abstract:
Localized surface plasmon resonances possess very interesting properties for a wide variety of sensing applications. In many of the existing applications only the intensity of the reflected or transmitted signals is taken into account, while the phase information is ignored. At the center frequency of a (localized) surface plasmon resonance, the electron cloud makes the transition between in- and…
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Localized surface plasmon resonances possess very interesting properties for a wide variety of sensing applications. In many of the existing applications only the intensity of the reflected or transmitted signals is taken into account, while the phase information is ignored. At the center frequency of a (localized) surface plasmon resonance, the electron cloud makes the transition between in- and out-of-phase oscillation with respect to the incident wave. Here we show that this information can experimentally be extracted by performing phase-sensitive measurements, which result in linewidths that are almost one order of magnitude smaller than those for intensity based measurements. As this phase transition is an intrinsic property of a plasmon resonance, this opens up many possibilities for boosting the figure of merit (FOM) of refractive index sensing by taking into account the phase of the plasmon resonance. We experimentally investigated this for two model systems: randomly distributed gold nanodisks and gold nanorings on top of a continuous gold layer and a dielectric spacer and observed FOM values up to 8.3 and 16.5 for the respective nanoparticles.
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Submitted 4 January, 2012;
originally announced January 2012.
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Self-assembled hexagonal double fishnets as negative index materials
Authors:
Kristof Lodewijks,
Niels Verellen,
Willem Van Roy,
Gustaaf Borghs,
Pol Van Dorpe
Abstract:
We show experimentally the successful use of colloidal lithography for the fabrication of negative index metamaterials in the near-infrared wavelength range. In particular, we investigated a specific implementation of the widely studied double fishnet metamaterials, consisting of a gold-silica-gold layer stack perforated by a hexagonal array of round holes. Tuning of the hole diameter allows us to…
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We show experimentally the successful use of colloidal lithography for the fabrication of negative index metamaterials in the near-infrared wavelength range. In particular, we investigated a specific implementation of the widely studied double fishnet metamaterials, consisting of a gold-silica-gold layer stack perforated by a hexagonal array of round holes. Tuning of the hole diameter allows us to tailor these self-assembled metamaterials both as single- (ε < 0) and double (ε < 0 and μ < 0) negative metamaterials.
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Submitted 18 October, 2010;
originally announced October 2010.
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Frequency shift keying in vortex-based spin torque oscillators
Authors:
M. Manfrini,
T. Devolder,
Joo-Von Kim,
P. Crozat,
C. Chappert,
W. Van Roy,
L. Lagae
Abstract:
Vortex-based spin-torque oscillators can be made from extended spin valves connected to an electrical nanocontact. We study the implementation of frequency shift keying modulation in these oscillators. Upon a square modulation of the current in the 10 MHz range, the vortex frequency follows the current command, with easy identification of the two swap** frequencies in the spectral measurements.…
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Vortex-based spin-torque oscillators can be made from extended spin valves connected to an electrical nanocontact. We study the implementation of frequency shift keying modulation in these oscillators. Upon a square modulation of the current in the 10 MHz range, the vortex frequency follows the current command, with easy identification of the two swap** frequencies in the spectral measurements. The frequency distribution of the output power can be accounted for by convolution transformations of the dc current vortex waveform, and the current modulation. Modeling indicates that the frequency transitions are phase coherent and last less than 25 ns. Complementing the multi-octave tunability and first-class agility, the capability of frequency shift keying modulation is an additional milestone for the implementation of vortex-based oscillators in RF circuit.
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Submitted 10 March, 2011; v1 submitted 8 September, 2010;
originally announced October 2010.
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Direct experimental measurement of phase-amplitude coupling in spin torque oscillators
Authors:
L. Bianchini,
S. Cornelissen,
Joo-Von Kim,
T. Devolder,
W. van Roy,
L. Lagae,
C. Chappert
Abstract:
We study spin-torque induced oscillations of MgO magnetic tunnel junctions in the time domain. By using the Hilbert transform on the time traces, we obtain for the first time a direct experimental measure of the coupling between the power and the phase fluctuations. We deduce the power restoration rate and we obtain low values for the coupling strength, which is consistent with the weak frequency…
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We study spin-torque induced oscillations of MgO magnetic tunnel junctions in the time domain. By using the Hilbert transform on the time traces, we obtain for the first time a direct experimental measure of the coupling between the power and the phase fluctuations. We deduce the power restoration rate and we obtain low values for the coupling strength, which is consistent with the weak frequency dependence on the applied voltage.
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Submitted 21 July, 2010; v1 submitted 29 April, 2010;
originally announced April 2010.
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Agility of vortex-based nanocontact spin torque oscillators
Authors:
M. Manfrini,
T. Devolder,
Joo-Von Kim,
P. Crozat,
N. Zerounian,
C. Chappert,
W. Van Roy,
L. Lagae,
G. Hrkac,
T. Schrefl
Abstract:
We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional agility is anticipated. To test this, we have inserted an oscillator in a microwave interferometer to apply abrupt current variations while time resolving its emission. Usin…
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We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional agility is anticipated. To test this, we have inserted an oscillator in a microwave interferometer to apply abrupt current variations while time resolving its emission. Using frequency shift keying, we show that the oscillator can switch between two stabilized frequencies differing by 25% in less than ten periods. With a wide frequency tunability and a good agility, such oscillators possess desirable figures of merit for modulation-based rf applications.
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Submitted 10 October, 2009;
originally announced October 2009.
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Quantized spin wave modes in magnetic tunnel junction nanopillars
Authors:
A. Helmer,
S. Cornelissen,
T. Devolder,
J. -V. Kim,
W. van Roy,
L. Lagae,
C. Chappert
Abstract:
We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from MgO-based magnetic tunnel junctions. The spin wave frequencies were measured using spectrally resolved electrical noise measurements. In all spectra, several indep…
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We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from MgO-based magnetic tunnel junctions. The spin wave frequencies were measured using spectrally resolved electrical noise measurements. In all spectra, several independent quantized spin wave modes have been observed and could be identified as eigenexcitations of the free layer and of the synthetic antiferromagnet of the junction. Using a theoretical approach based on the diagonalization of the dynamical matrix of a system of three coupled, spatially confined magnetic layers, we have modeled the spectra for the smallest pillar and have extracted its material parameters. The magnetization and exchange stiffness constant of the CoFeB free layer are thereby found to be substantially reduced compared to the corresponding thin film values. Moreover, we could infer that the pinning of the magnetization at the lateral boundaries must be weak. Finally, the interlayer dipolar coupling between the free layer and the synthetic antiferromagnet causes mode anticrossings with gap openings up to 2 GHz. At low fields and in the larger pillars, there is clear evidence for strong non-uniformities of the layer magnetizations. In particular, at zero field the lowest mode is not the fundamental mode, but a mode most likely localized near the layer edges.
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Submitted 8 January, 2010; v1 submitted 22 July, 2009;
originally announced July 2009.
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An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
Authors:
C. Gould,
S. Mark,
K. Pappert,
G. Dengel,
J. Wenisch,
R. P. Campion,
A. W. Rushforth,
D. Chiba,
Z. Li,
X. Liu,
W. Van Roy,
H. Ohno,
J. K. Furdyna,
B. Gallagher,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all…
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This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.
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Submitted 28 February, 2008;
originally announced February 2008.
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Spatial structure of Mn-Mn acceptor pairs in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. -M. Tang,
M. E. Flatté,
W. Van Roy,
J. De Boeck,
J. H. Wolter
Abstract:
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acce…
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The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high do** levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.
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Submitted 24 May, 2005; v1 submitted 23 May, 2005;
originally announced May 2005.
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Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As
Authors:
S. C. Masmanidis,
H. X. Tang,
E. B. Myers,
Mo Li,
K. De Greve,
G. Vermeulen,
W. Van Roy,
M. L. Roukes
Abstract:
A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can…
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A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
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Submitted 9 May, 2005;
originally announced May 2005.
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Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode
Authors:
P. Van Dorpe,
W. Van Roy,
J. De Boeck,
G. Borghs,
P. Sankowski,
P. Kacman,
J. A. Majewski,
T. Dietl
Abstract:
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Butt…
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The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization.
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Submitted 25 February, 2005;
originally announced February 2005.
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Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain
Authors:
S. T. B. Goennenwein,
S. Russo,
A. F. Morpurgo,
T. M. Klapwijk,
W. van Roy,
J. de Boeck
Abstract:
We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitat…
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We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.
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Submitted 27 December, 2004; v1 submitted 13 December, 2004;
originally announced December 2004.
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Enhanced annealing effect in an oxygen atmosphere on GaMnAs
Authors:
M. Malfait,
J. Vanacken,
W. Van Roy,
G. Borghs,
V. V. Moshchalkov
Abstract:
We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMn…
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We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMnAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the out-diffusion of Mn_I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.
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Submitted 28 September, 2004;
originally announced September 2004.
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Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. H. Wolter,
W. Van Roy,
J. De Boeck
Abstract:
An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of t…
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An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
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Submitted 6 June, 2004;
originally announced June 2004.
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Spatial structure of an individual Mn acceptor in GaAs
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
J. H. Wolter,
W. Van Roy,
J. De Boeck,
J. -M. Tang,
M. E. Flatte
Abstract:
The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs c…
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The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.
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Submitted 1 February, 2004;
originally announced February 2004.
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Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy
Authors:
A. M. Yakunin,
A. Yu. Silov,
P. M. Koenraad,
W. Van Roy,
J. De Boeck,
J. H. Wolter
Abstract:
We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feat…
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We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the [Mn2+(3d5) + hole] complex.
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Submitted 12 August, 2003;
originally announced August 2003.
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Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode
Authors:
P. Van Dorpe,
V. F. Motsnyi,
M. Nijboer,
E. Goovaerts,
V. I. Safarov,
J. Das,
W. Van Roy,
G. Borghs,
J. De Boeck
Abstract:
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polariza…
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We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.
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Submitted 25 June, 2003; v1 submitted 16 August, 2002;
originally announced August 2002.
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Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
Authors:
V. F. Motsnyi,
V. I. Safarov,
J. De Boeck,
J. Das,
W. Van Roy,
E. Goovaerts,
G. Borghs
Abstract:
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in ex…
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We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.
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Submitted 11 October, 2001;
originally announced October 2001.
