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Non-trivial quantum magnetotransport oscillations in pure and robust topological $α$-Sn films
Authors:
Ivan Madarevic,
Niels Claessens,
Aleksandr Seliverstov,
Chris Van Haesendonck,
Margriet J. Van Bael
Abstract:
We report experimental evidence of topological Dirac fermion charge carriers in pure and robust $α$-Sn films grown on InSb substrates. This evidence was acquired using standard macroscopic four-point contact resistance measurements, conducted on uncapped films with a significantly reduced bulk mobility. We analyzed and compared electrical characteristics of the constituting components of the $α$-S…
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We report experimental evidence of topological Dirac fermion charge carriers in pure and robust $α$-Sn films grown on InSb substrates. This evidence was acquired using standard macroscopic four-point contact resistance measurements, conducted on uncapped films with a significantly reduced bulk mobility. We analyzed and compared electrical characteristics of the constituting components of the $α$-Sn/InSb sample, and propose a three-band drift velocity model accordingly. A surface band, with low carrier density and high mobility, is identified as the origin of the observed Shubnikov -- de Haas oscillations. The analysis of these quantum oscillations results in a non-trivial value of the phase shift $γ=0$, characteristic for topologically protected Dirac fermions. For the same uncapped samples we estimate the momentum relaxation time $τ\approx 300\ \mathrm{fs}$, which is significantly larger in comparison with the previous reports on grown $α$-Sn films.
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Submitted 2 April, 2021; v1 submitted 27 February, 2020;
originally announced February 2020.
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Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn
Authors:
Ivan Madarevic,
Umamahesh Thupakula,
Gertjan Lippertz,
Niels Claessens,
Pin-Cheng Lin,
Harsh Bana,
Giovanni Di Santo,
Sara Gonzalez,
Luca Petaccia,
Maya Narayanan Nair,
Lino M. C. Pereira,
Chris Van Haesendonck,
Margriet Van Bael
Abstract:
In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By develo** a reliable fabrication process, we were able to grow pure strained $α$-Sn film…
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In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By develo** a reliable fabrication process, we were able to grow pure strained $α$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$-Sn above the Fermi level.
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Submitted 23 February, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
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Experimental study of the magnetic field distribution and shape of domains near the surface of type-I superconductors in the intermediate state
Authors:
V. Kozhevnikov,
A. Suter,
T. Prokscha,
C. Van Haesendonck
Abstract:
The importance of accounting for the inhomogeneity of the magnetic field distribution and roundness of domain walls near the surface of type-I superconductors in the intermediate state for forming the equilibrium flux structure was predicted by Landau eight decades ago. Further studies confirmed this prediction and extended it to all equilibrium properties of this state. Here we report on direct d…
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The importance of accounting for the inhomogeneity of the magnetic field distribution and roundness of domain walls near the surface of type-I superconductors in the intermediate state for forming the equilibrium flux structure was predicted by Landau eight decades ago. Further studies confirmed this prediction and extended it to all equilibrium properties of this state. Here we report on direct depth-resolved measurements of the field distribution and shape of domains near the surface of high-purity type-I (indium) films in a perpendicular field using Low-Energy Muon Spin Rotation spectroscopy. We find that at low applied fields (in about half of the field range of the intermediate state) the field distribution and domains' shape agrees with that proposed by Tinkham. However, for high fields our data suggest that reality differs from theoretical expectations. In particular, the width of the superconducting laminae can expand near the surface leading to formation of a maximum in the static magnetic field in the current-free space outside the sample. A possible interpretation of these experimental results is discussed.
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Submitted 30 June, 2020; v1 submitted 22 February, 2018;
originally announced February 2018.
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Possible existence of a filamentary state in type-II superconductors
Authors:
V. Kozhevnikov,
A. -M. Valente-Feliciano,
P. J. Curran,
A. Suter,
A. H. Liu,
G. Richter,
E. Morenzoni,
S. J. Bending,
C. Van Haesendonck
Abstract:
The standard interpretation of the phase diagram of type-II superconductors was developed in 1960s and has since been considered a well-established part of classical superconductivity. However, upon closer examination a number of fundamental issues arise that leads one to question this standard picture. To address these issues we studied equilibrium properties of niobium samples near and above the…
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The standard interpretation of the phase diagram of type-II superconductors was developed in 1960s and has since been considered a well-established part of classical superconductivity. However, upon closer examination a number of fundamental issues arise that leads one to question this standard picture. To address these issues we studied equilibrium properties of niobium samples near and above the upper critical field Hc2 in parallel and perpendicular magnetic fields. The samples investigated were very high quality films and single crystal discs with the Ginzburg-Landau parameters 0.8 and 1.3, respectively. A range of complementary measurements have been performed, which include dc magnetometry, electrical transport, muSR spectroscopy and scanning Hall-probe microscopy. Contrarily to the standard scenario, we observed that a superconducting phase is present in the sample bulk above Hc2 and the field Hc3 is the same in both parallel and perpendicular fields. Our findings suggest that above Hc2 the superconducting phase forms filaments parallel to the field regardless on the field orientation. Near Hc2 the filaments preserve the hexagonal structure of the preceding vortex lattice of the mixed state and the filament density continuously falls to zero at Hc3. Our work has important implications for the correct interpretation of properties of type-II superconductors and can also be essential for practical applications of these materials.
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Submitted 9 May, 2017;
originally announced May 2017.
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Equilibrium properties of the mixed state in superconducting niobium in a transverse magnetic field: Experiment and theoretical model
Authors:
V. Kozhevnikov,
A. -M. Valente-Feliciano,
P. J. Curran,
G. Richter,
A. Volodin,
A. Suter,
S. Bending,
C. Van Haesendonck
Abstract:
Equilibrium magnetic properties of the mixed state in type-II superconductors were measured with high purity bulk and film niobium samples in parallel and perpendicular magnetic fields using dc magnetometry and scanning Hall-probe microscopy. Equilibrium magnetization data for the perpendicular geometry were obtained for the first time. It was found that none of the existing theories is consistent…
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Equilibrium magnetic properties of the mixed state in type-II superconductors were measured with high purity bulk and film niobium samples in parallel and perpendicular magnetic fields using dc magnetometry and scanning Hall-probe microscopy. Equilibrium magnetization data for the perpendicular geometry were obtained for the first time. It was found that none of the existing theories is consistent with these new data. To address this problem, a theoretical model is developed and experimentally validated. The new model describes the mixed state in an averaged limit, i.e. %without detailing the samples' magnetic structure and therefore ignoring interactions between vortices. It is quantitatively consistent with the data obtained in a perpendicular field and provides new insights on properties of vortices. % and the entire mixed state. At low values of the Ginzburg-Landau parameter, the model converts to that of Peierls and London for the intermediate state in type-I superconductors. It is shown that description of the vortex matter in superconductors in terms of a 2D gas is more appropriate than the frequently used crystal- and glass-like scenarios.
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Submitted 2 March, 2018; v1 submitted 13 March, 2016;
originally announced March 2016.
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Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics
Authors:
Taishi Chen,
Qian Chen,
Koen Schouteden,
Wenkai Huang,
Xuefeng Wang,
Zhe Li,
Feng Miao,
Xinran Wang,
Zhaoguo Li,
Bo Zhao,
Shaochun Li,
Fengqi Song,
**lan Wang,
Chris van Haesendonck,
Baigeng Wang,
Guanghou Wang
Abstract:
We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick fla…
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We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed.
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Submitted 26 February, 2014; v1 submitted 2 January, 2014;
originally announced January 2014.
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Magnetic flux density and the critical field in the intermediate state of type-I superconductors
Authors:
V. Kozhevnikov,
R. J. Wijngaarden,
J. de Wit,
C. Van Haesendonck
Abstract:
To address unsolved fundamental problems of the intermediate state (IS), the equilibrium magnetic flux structure and the critical field in a high purity type-I superconductor (indium film) are investigated using magneto-optical imaging with a 3D vector magnet and electrical transport measurements. The least expected observation is that the critical field in the IS can be as small as nearly 40% of…
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To address unsolved fundamental problems of the intermediate state (IS), the equilibrium magnetic flux structure and the critical field in a high purity type-I superconductor (indium film) are investigated using magneto-optical imaging with a 3D vector magnet and electrical transport measurements. The least expected observation is that the critical field in the IS can be as small as nearly 40% of the thermodynamic critical field $H_c$. This indicates that the flux density in the \textit{bulk} of normal domains can be \textit{considerably} less than $H_c$, in apparent contradiction with the long established paradigm, stating that the normal phase is unstable below $H_c$. Here we present a novel theoretical model consistently describing this and \textit{all} other properties of the IS. Moreover, our model, based the rigorous thermodynamic treatment of observed laminar flux structure in a tilted field, allows for a \textit{quantitative} determination of the domain-wall parameter and the coherence length, and provides new insight into the properties of all superconductors.
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Submitted 18 October, 2013; v1 submitted 7 December, 2012;
originally announced December 2012.
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Size and mass of Cooper pairs determined by low-energy $μ$SR and PNR
Authors:
V. Kozhevnikov,
A. Suter,
H. Fritzsche,
V. Gladilin,
A. Volodin,
J. Cuppens,
T. Prokscha,
E. Morenzoni,
M. J. Van Bael,
K. Temst,
C. Van Haesendonck,
J. O. Indekeu
Abstract:
The Pippard coherence length $ξ_0$ (the size of a Cooper pair) in an extreme type-I superconductor was determined directly through high-resolution measurement of the nonlocal electrodynamic effect combining low-energy muon spin rotation spectroscopy and polarized neutron reflectometry. The renormalization factor $Z$=m_cp*/2m (m_cp* and m are the mass of the Cooper pair and the electron, respective…
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The Pippard coherence length $ξ_0$ (the size of a Cooper pair) in an extreme type-I superconductor was determined directly through high-resolution measurement of the nonlocal electrodynamic effect combining low-energy muon spin rotation spectroscopy and polarized neutron reflectometry. The renormalization factor $Z$=m_cp*/2m (m_cp* and m are the mass of the Cooper pair and the electron, respectively) resulting from the electron-phonon interaction, and the temperature dependent London penetration depth $λ_L(T)$ were determined as well. A general expression linking $ξ_0$, $Z$ and $λ_L(0)$ is introduced and experimentally verified. This expression allows one to determine experimentally the Pippard coherence length in \textit{any} superconductor, independent of whether the electrodynamics is local or nonlocal, conventional or unconventional.
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Submitted 16 September, 2012;
originally announced September 2012.
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Noninvasive Embedding of Single Co Atoms in Ge(111)2x1 Surfaces
Authors:
D. A. Muzychenko,
K. Schouteden,
M. Houssa,
S. V. Savinov,
C. Van Haesendonck
Abstract:
We report on a combined scanning tunneling microscopy (STM) and density functional theory (DFT) based investigation of Co atoms on Ge(111)2x1 surfaces. When deposited on cold surfaces, individual Co atoms have a limited diffusivity on the atomically flat areas and apparently reside on top of the upper pi-bonded chain rows exclusively. Voltage-dependent STM imaging reveals a highly anisotropic elec…
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We report on a combined scanning tunneling microscopy (STM) and density functional theory (DFT) based investigation of Co atoms on Ge(111)2x1 surfaces. When deposited on cold surfaces, individual Co atoms have a limited diffusivity on the atomically flat areas and apparently reside on top of the upper pi-bonded chain rows exclusively. Voltage-dependent STM imaging reveals a highly anisotropic electronic perturbation of the Ge surface surrounding these Co atoms and pronounced one-dimensional confinement along the pi-bonded chains. DFT calculations reveal that the individual Co atoms are in fact embedded in the Ge surface, where they occupy a quasi-stationary position within the big 7-member Ge ring in between the 3rd and 4th atomic Ge layer. The energy needed for the Co atoms to overcome the potential barrier for penetration in the Ge surface is provided by the kinetic energy resulting from the deposition process. DFT calculations further demonstrate that the embedded Co atoms form four covalent Co-Ge bonds, resulting in a Co4+ valence state and a 3d5 electronic configuration. Calculated STM images are in perfect agreement with the experimental atomic resolution STM images for the broad range of applied tunneling voltages.
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Submitted 13 March, 2012;
originally announced March 2012.
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Visualizing plasmon coupling in closely-spaced chains of Ag nanoparticles by electron energy loss spectroscopy
Authors:
Fengqi Song,
Tingyu Wang,
Xuefeng Wang,
Changhui Xu,
Longbing He,
Jianguo Wan,
Chris Van Haesendonck,
Simon P. Ringer,
Min Han,
Zongwen Liu,
Guanghou Wang
Abstract:
Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, map** the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ult…
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Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, map** the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ultraviolet region as the inter-particle spacing was reduced, reaching the visible range at 2.7 eV. Calculations based on the discrete dipole approximation confirmed its optical activeness, where the longitudinal direction was constructed as the path for light transportation. Two coupling paths were then observed in an inflexed 4-particle chain.
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Submitted 12 February, 2012;
originally announced February 2012.
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Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces
Authors:
D. A. Muzychenko,
K. Schouteden,
V. I. Panov,
C. Van Haesendonck
Abstract:
The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at low temperature. The deposited Co atoms are immobile at substrate temperatures of 4.5K, while they can diffuse along the upper pi-bonded chains at a temperature of 80K and higher. This mobility results in accumulation of Co atoms at…
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The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at low temperature. The deposited Co atoms are immobile at substrate temperatures of 4.5K, while they can diffuse along the upper pi-bonded chains at a temperature of 80K and higher. This mobility results in accumulation of Co atoms at atomic steps, at domain boundaries as well as on atomically flat Ge terraces at, e.g., vacancies or adatoms, where reconstructed Co/Ge intermixing layers are formed. Voltage dependent STM images reveal that the newly reconstructed surface locally exhibits a highly ordered atomic structure, having the same periodicity as that of the initial 2x1 reconstruction. In addition, it shows a double periodicity along the [2-1-1] direction, which can be related to the modified electronic properties of the pi-bonded chains.
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Submitted 3 January, 2012;
originally announced January 2012.
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Fabrication of InP nano pillars by ECR Ar ion irradiation
Authors:
D. Paramanik,
T. T. Suzuki,
N. Ikeda,
Y. Sugimoto,
T. Nagai,
M. Takeguchi,
C. Van Haesendonck
Abstract:
Regular arrays of InP nano pillars have been fabricated by low energy Electron Cyclotron Resonance (ECR) Ar+ ion irradiation on InP(111) surface. Several scanning electron microscopy (SEM) images have been utilized to invetsigate the width, height, and orientation of these nano pillars on InP(111) surfaces. The average width and length of these nano-pillars are about 50 nm and 500 nm, respectively…
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Regular arrays of InP nano pillars have been fabricated by low energy Electron Cyclotron Resonance (ECR) Ar+ ion irradiation on InP(111) surface. Several scanning electron microscopy (SEM) images have been utilized to invetsigate the width, height, and orientation of these nano pillars on InP(111) surfaces. The average width and length of these nano-pillars are about 50 nm and 500 nm, respectively. The standing angle with respect to the surface of the nano-pillars depend on the incidence angle of the Ar ion irradiation during the fabrication process. Interestingly, the growth direction of the nano pillars are along the reflection direction of the ion beam and the standing angles are nearly same as the ion incidence angle with the surface normal. This nano-pillas are easily transferred from the InP surface to double sided carbon tape without any damage. High Resolution Transmission Electron Microscopy (HRTEM) study of single nano-pillar reveals that this nano-pillar are almost crystalline in nature except 2-4 nm amorphous layer on the outer surface. The transmission electron microscopy combined with energy-dispersive x-ray spectroscopy (TEM-EDS) analysis of these nano pillars exhibit that the ratio of In and P is little higher compared to the bulk InP.
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Submitted 11 April, 2011;
originally announced April 2011.
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Surface morphology and magnetic anisotropy of Fe/MgO(001) films deposited at oblique incidence
Authors:
Qing-feng Zhan,
Chris Van Haesendonck,
Stijn Vandezande,
Kristiaan Temst
Abstract:
We have studied surface morphology and magnetic properties of Fe/MgO(001) films deposited at an angle varying between 0o and 60o with respect to the surface normal and with azimuth along the Fe[010] or the Fe[110] direction. Due to shadowing, elongated grains appear on the film surface for deposition at sufficiently large angle. X-ray reflectivity reveals that, depending on the azimuthal directi…
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We have studied surface morphology and magnetic properties of Fe/MgO(001) films deposited at an angle varying between 0o and 60o with respect to the surface normal and with azimuth along the Fe[010] or the Fe[110] direction. Due to shadowing, elongated grains appear on the film surface for deposition at sufficiently large angle. X-ray reflectivity reveals that, depending on the azimuthal direction, films become either rougher or smoother for oblique deposition. For deposition along Fe[010] the pronounced uniaxial magnetic anisotropy (UMA) results in the occurrence of reversed two-step and of three-step hysteresis loops. For deposition along Fe[110] the growth-induced UMA is much weaker, causing a small rotation of the easy axes.
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Submitted 27 October, 2008;
originally announced October 2008.
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Magnetic anisotropy and reversal in epitaxial Fe/MgO(001) films revisited
Authors:
Qing-feng Zhan,
Stijn Vandezande,
Kristiaan Temst,
Chris Van Haesendonck
Abstract:
We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are tuned using different growth geometries and post growth treatments. The previously adopted mechanism of 180^{o} domain wall nucleation clearly fails to explain the observed 180^{o} magnetization reversal. A new reversal…
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We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are tuned using different growth geometries and post growth treatments. The previously adopted mechanism of 180^{o} domain wall nucleation clearly fails to explain the observed 180^{o} magnetization reversal. A new reversal mechanism with two successive domain wall nucleations consistently predicts the switching fields for all field orientations. Our results are relevant for a correct interpretation of magnetization reversal in many other epitaxial metallic and semiconducting thin films.
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Submitted 27 October, 2008; v1 submitted 26 August, 2008;
originally announced August 2008.
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Current-induced domain-wall motion in synthetic antiferromagnets
Authors:
D. Herranz,
R. Guerrero,
R. Villar,
F. G. Aliev,
A. C. Swaving,
R. A. Duine,
C. van Haesendonck,
I. Vavra
Abstract:
Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10 multilayers a transition from excess to suppressed domain-wall induced 1/f noise above current densities of j_c ~ 2*10^5 A/cm^2 has been observed. In ferromagne…
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Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10 multilayers a transition from excess to suppressed domain-wall induced 1/f noise above current densities of j_c ~ 2*10^5 A/cm^2 has been observed. In ferromagnetic Co line structures the domain wall related noise remains qualitatively unchanged up to current densities exceeding 10^6A/cm^2. Theoretical estimates of the critical current density for a synthetic Fe/Cr antiferromagnet suggest that this effect may be attributed to current-induced domain-wall motion that occurs via spin transfer torques.
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Submitted 16 July, 2008;
originally announced July 2008.
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Low-temperature scanning tunneling microscopy of ring-like surface electronic structures around Co islands on InAs(110) surfaces
Authors:
D. A. Muzychenko,
K. Schouteden,
S. V. Savinov,
N. S. Maslova,
V. I. Panov,
C. Van Haesendonck
Abstract:
We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance…
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We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance in the current-voltage dependence. A theoretical model is introduced, which takes into account non-equilibrium effects in the small tunneling junction area. In the framework of this model the appearance of the ring-like features is explained in terms of interference effects between electrons tunneling directly and indirectly (via a Co island) between the tip and the InAs surface.
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Submitted 12 December, 2007;
originally announced December 2007.
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Evidence for nonmonotonic magnetic field penetration in a type-I superconductor
Authors:
V. F. Kozhevnikov,
C. V. Giuraniuc,
M. J. Van Bael,
K. Temst,
C. Van Haesendonck,
T. M. Mishonov,
T. Charlton,
R. M. Dalgliesh,
Yu. N. Khaidukov,
Yu. V. Nikitenko,
V. L. Aksenov,
V. N. Gladilin,
V. M. Fomin,
J. T. Devreese,
J. O. Indekeu
Abstract:
Polarized neutron reflectometry (PNR) provides evidence that nonlocal electrodynamics governs the magnetic field penetration in an extreme low-k superconductor. The sample is an indium film with a large elastic mean free path (11 mkm) deposited on a silicon oxide wafer. It is shown that PNR can resolve the difference between the reflected neutron spin asymmetries predicted by the local and nonlo…
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Polarized neutron reflectometry (PNR) provides evidence that nonlocal electrodynamics governs the magnetic field penetration in an extreme low-k superconductor. The sample is an indium film with a large elastic mean free path (11 mkm) deposited on a silicon oxide wafer. It is shown that PNR can resolve the difference between the reflected neutron spin asymmetries predicted by the local and nonlocal theories of superconductivity. The experimental data support the nonlocal theory, which predicts a nonmonotonic decay of the magnetic field.
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Submitted 5 December, 2007; v1 submitted 14 April, 2007;
originally announced April 2007.
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Surface Enhancement of Superconductivity in Tin
Authors:
V. F. Kozhevnikov,
M. J. Van Bael,
W. Vinckx,
K. Temst,
C. Van Haesendonck,
J. O. Indekeu
Abstract:
The possibility of surface enhancement of superconductivity is examined experimentally. It is shown that single crystal tin samples with cold-worked surfaces represent a superconductor with a surface-enhanced order parameter (or negative surface extrapolation length b), whose magnitude can be controlled.
The possibility of surface enhancement of superconductivity is examined experimentally. It is shown that single crystal tin samples with cold-worked surfaces represent a superconductor with a surface-enhanced order parameter (or negative surface extrapolation length b), whose magnitude can be controlled.
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Submitted 12 April, 2005;
originally announced April 2005.
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Tailoring Fe/Ag Superparamagnetic Composites by Multilayer Deposition
Authors:
J. Balogh,
D. Kaptás,
L. F. Kiss,
T. Pusztai,
E. Szilágyi,
Á. Tunyogi,
J. Swerts,
S. Vandezande,
K. Temst,
C. Van Haesendonck
Abstract:
The magnetic properties of Fe/Ag granular multilayers were examined by SQUID magnetization and Mossbauer spectroscopy measurements. Very thin (0.2 nm) discontinuous Fe layers show superparamagnetic properties that can be tailored by the thickness of both the magnetic and the spacer layers. The role of magnetic interactions was studied in novel heterostructures of superparamagnetic and ferromagne…
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The magnetic properties of Fe/Ag granular multilayers were examined by SQUID magnetization and Mossbauer spectroscopy measurements. Very thin (0.2 nm) discontinuous Fe layers show superparamagnetic properties that can be tailored by the thickness of both the magnetic and the spacer layers. The role of magnetic interactions was studied in novel heterostructures of superparamagnetic and ferromagnetic layers and the specific contribution of the ferromagnetic layers to the low field magnetic susceptibility was identified.
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Submitted 24 February, 2005;
originally announced February 2005.
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Reversing the training effect in exchange biased CoO/Co bilayers
Authors:
Steven Brems,
Dieter Buntinx,
Kristiaan Temst,
Chris Van Haesendonck,
Florin Radu,
Hartmut Zabel
Abstract:
We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) are consistent with nucleation of magnetic domains in the antiferromagnetic CoO layer during the first magnetization reversal. This accounts for the enhanced spin rotation observed in the ferromagnetic Co layer for all subsequent reversa…
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We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) are consistent with nucleation of magnetic domains in the antiferromagnetic CoO layer during the first magnetization reversal. This accounts for the enhanced spin rotation observed in the ferromagnetic Co layer for all subsequent reversals. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased.
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Submitted 17 February, 2005;
originally announced February 2005.
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Electron interaction with domain walls in antiferromagnetically coupled multilayers
Authors:
F. G. Aliev,
R. Schad,
A. Volodin,
K. Temst,
C. Van Haesendonck,
Y. Bruynseraede,
I. Vavra,
V. K. Dugaev,
R. Villar
Abstract:
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invo…
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For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls.
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Submitted 17 July, 2003;
originally announced July 2003.
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Impurity spin magnetization of thin Fe doped Au films
Authors:
E. Seynaeve,
K. Temst,
F. G. Aliev,
C. Van Haesendonck,
V. N. Gladilin,
V. M. Fomin,
J. T. Devreese
Abstract:
In order to probe the influence of the surface-induced anisotropy on the impurity spin magnetization, we measure the anomalous Hall effect in thin AuFe films at magnetic fields up to 15 T. The observed suppression of the anomalous Hall resistivity at low fields as well as the appearance of a minimum in the differential Hall resistivity at higher fields can be explained by our theoretical model w…
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In order to probe the influence of the surface-induced anisotropy on the impurity spin magnetization, we measure the anomalous Hall effect in thin AuFe films at magnetic fields up to 15 T. The observed suppression of the anomalous Hall resistivity at low fields as well as the appearance of a minimum in the differential Hall resistivity at higher fields can be explained by our theoretical model which takes into account the influence of a polycrystalline film structure on the surface-induced anisotropy. Our results imply that the apparent discrepancy between different experimental results for the size effects in dilute magnetic alloys can be linked to a different microstructure of the samples.
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Submitted 29 February, 2000;
originally announced February 2000.
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Universal conductance fluctuations and low temperature 1/f noise in mesoscopic AuFe spin glasses
Authors:
G. Neuttiens,
C. Strunk,
C. Van Haesendonck,
Y. Bruynseraede
Abstract:
We report on intrinsic time-dependent conductance fluctuations observed in mesoscopic AuFe spin glass wires. These dynamical fluctuations have a 1/f-like spectrum and appear below the measured spin glass freezing temperature of our samples. The dependence of the fluctuation amplitude on temperature, magnetic field, voltage and Fe concentration allows a consistent interpretation in terms of quant…
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We report on intrinsic time-dependent conductance fluctuations observed in mesoscopic AuFe spin glass wires. These dynamical fluctuations have a 1/f-like spectrum and appear below the measured spin glass freezing temperature of our samples. The dependence of the fluctuation amplitude on temperature, magnetic field, voltage and Fe concentration allows a consistent interpretation in terms of quantum interference effects which are sensitive to the slowly fluctuating spin configuration.
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Submitted 27 May, 1999;
originally announced May 1999.
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Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy
Authors:
A. Depuydt,
C. Van Haesendonck,
N. S. Maslova,
V. I. Panov,
V. V. Rakov,
S. V. Savinov
Abstract:
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic scale defects which can be identified as S dopant atoms and as As vacancies, respectively. The strong bias voltage dependence of the…
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We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic scale defects which can be identified as S dopant atoms and as As vacancies, respectively. The strong bias voltage dependence of the STM image of the impurities can be explained in terms of resonant tunneling through localized states which are present near the impurity.
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Submitted 12 May, 1999;
originally announced May 1999.
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Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals
Authors:
A. Depuydt,
C. Van Haesendonck,
N. S. Maslova,
V. I. Panov,
S. V. Savinov,
P. I. Arseev
Abstract:
We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friede…
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We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.
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Submitted 12 May, 1999;
originally announced May 1999.
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Quantum transport in a multiwalled carbon nanotube
Authors:
L. Langer,
V. Bayot,
E. Grivei,
J. -P. Issi,
J. P. Heremans,
C. H. Olk,
L. Stockman,
C. Van Haesendonck,
Y. Bruynseraede
Abstract:
We report on electrical resistance measurements of an individual carbon nanotube down to a temperature T=20 mK. The conductance exhibits a ln T dependence and saturates at low temperature. A magnetic field applied perpendicular to the tube axis, increases the conductance and produces aperiodic fluctuations. The data find a global and coherent interpretation in terms of two-dimensional weak local…
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We report on electrical resistance measurements of an individual carbon nanotube down to a temperature T=20 mK. The conductance exhibits a ln T dependence and saturates at low temperature. A magnetic field applied perpendicular to the tube axis, increases the conductance and produces aperiodic fluctuations. The data find a global and coherent interpretation in terms of two-dimensional weak localization and universal conductance fluctuations in mesoscopic conductors. The dimensionality of the electronic system is discussed in terms of the peculiar structure of carbon nanotubes.
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Submitted 14 December, 1995; v1 submitted 13 December, 1995;
originally announced December 1995.
